Microchip-Tech-JANSR2N2369AUB
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MSR2N2369AUB / UBC
Screened Levels:
MSR
Rad Hard NPN Silicon High Speed
Switching Transistor
Screened per MIL-PRF-19500 & ESCC 22900
QPL RANGE and RAD LEVEL
Radiation Level
MSR2N2369AUB
100 Krad
TID
ELDRS
100 Krad
DESCRIPTION
This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to
drive many high-reliability applications.
This device is constructed and screened to a JANSR
performance level with radiation test method 1019 wafer lot acceptance conducted on all die
lots. Fully compliant to
GSFC EEE-INST-002
reliability, screening and radiation hardness
assurance requirements for space flight projects
UB & UBC
Package
FEATURES
JEDEC registered 2N2369
Also available in:
TID level screened per MIL-PRF-19500
AU package
(surface mount)
MSR2N2369AU
Also available with ELDRS testing to 0.01 Rad(s)/ sec
MKCR / MHCR chip die available
RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate
TO-206AA package
(leaded top-hat)
MSR2N2369A
APPLICATIONS / BENEFITS
UA package
(surface mount)
MSR2N2369AUA
Rad-Hard power supplies
Rad-Hard motor controls
General purpose switching
Instrumentation Amps
EPS Satellite switching power applications
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise noted
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
T
J
and T
STG
-65 to +200
ºC
Thermal Resistance Junction-to-Solder Pad
Thermal Resistance Junction-to-Ambient
R
Ө
JSP
R
Ө
JA
P
T
210
486
ºC/W
ºC/W
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158
or
(978) 620-2600
Total Power Dissipation:
@ T
A
= +25 ºC
(1)
@ T
C
= +125 ºC
(2) (3)
@ T
SP
= +125 ºC
(2)
0.36
0.36
0.36
Collector-Base Voltage, Emitter Open
Emitter-Base Voltage, Collector Open
Collector-Emitter Voltage, Base Open
Collector Current, dc
V
CBO
V
EBO
V
CEO
V
CES
T
SP
40
4.5
15
V
V
Fax: (978) 689-0803
MSC – Ireland
V
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
40
V
o
C
Solder Temperature @ 10 s
260
Notes:
1. Derate
linearly 2.06 mW/°C above T
A
= +25°C.
2. Derate
linerly 4.8 mW/°C above T
C
=+125°C. See
Figure 1
.
3. Power
dissipation limited to 360 mW per chip regardless of thermal resistance.
Website:
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 1 of 7
MSR2N2369AUB / UBC
MECHANICAL and PACKAGING
CASE: Ceramic
with metal lid.
UBC is ceramic with ceramic lid.
TERMINALS: Gold
plating over nickel under plate.
MARKING: Part
number, date code, manufacturer’s ID.
TAPE & REEL option:
Standard per EIA-418D.
Consult factory for quantities.
WEIGHT: <
0.04 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
MSR
2N2369A UB
Reliability Level
MSR* – 100K Rads (Si)
Surface Mount package
UB = metal lid
UBC = ceramic lid
JEDEC type number
*The MSR designator is our internal part nomenclature assigned to this family of parts, in lieu of pending JANSR
submissions through DLA (Defense Logistic Agency).
SYMBOLS & DEFINITIONS
Symbol
Definition
Base current:
The value of the dc current into the base terminal.
Collector current:
The value of the dc current into the collector terminal.
Emitter current:
The value of the dc current into the emitter terminal.
Gate drive impedance or Gate resistance
I
B
I
C
I
E
R
G
V
CB
Collector-base voltage:
The dc voltage between the collector and the base.
Collector-base voltage, base open:
The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-emitter voltage:
The dc voltage between the collector and the emitter.
V
CBO
V
CE
Collector-emitter voltage, base open:
The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Emitter-base voltage:
The dc voltage between the emitter and the base
V
CEO
V
EB
Emitter-base voltage, collector open:
The voltage between the emitter and base terminals with the collector terminal
open-circuited.
V
EBO
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 2 of 7
MSR2N2369AUB / UBC
ELECTRICAL CHARACTERISTICS
@ T
A
= 25 ºC unless otherwise noted.
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Collector-Base Cutoff Current
V
CB
= 40 V
V
(BR)CEO
I
CBO
15
V
A
10
V
CB
= 32 V
0.2
Emitter-Base Cutoff Current
V
EB
= 4.5 V
I
EBO
I
CES
10
0.25
A
A
V
EB
= 4.0 V
Collector-Emitter Cutoff Current
V
CE
= 20 V
0.4
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 10 mA, V
CE
= 0.35 V
I
C
= 30 mA, V
CE
= 0.4 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
40
30
40
20
120
120
120
120
h
FE
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 30 mA, I
B
= 3.0 mA
Base-Emitter Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 30 mA, I
B
= 3.0 mA
V
CE(sat)
V
V
0.2
0.25
V
BE(sat)
0.7
0.85
0.90
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 1.0 V, f = 1.0 kHz
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
h
fe
20
10
|h
fe
|
5.0
I
C
= 10 mA, V
CE
= 10 V, f = 100 MHz
Output Capacitance
V
CB
= 5 V, I
E
= 0, 100 kHz
f
1.0 MHz
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, 100 kHz
f
1.0 MHz
C
obo
C
ibo
4.0
5.0
pF
pF
(1) Pulse
Test: Pulse Width = 300
s, Duty Cycle
2.0%
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
I
C
= 10 mA, I
B1
= 3.0 mA, I
B2
= -1.5 mA
t
on
12
ns
Turn-Off Time
I
C
= 10 mA, I
B1
= 3.0 mA, I
B2
= -1.5 mA
t
off
18
ns
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 3 of 7
MSR2N2369AUB / UBC
GRAPHS
Time (s)
FIGURE 1
Thermal Impedance Graph (R
Ө
JSP
)
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 4 of 7
MSR2N2369AUB / UBC
Radiatio
n
h
ardnes
s
a
ssurance
The MSR series product are guaranteed in radiation with full compliance to MIL-PRF-19500 specification
JANSR level and are also guaranteed to meet ESCC 22900 specifications (General specifications) .
Radiation assurance MIL-PRF-19500
MSR parts are guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-19500 specification, specifically
the Group D, subgroup 2 inspection, between 50 and 300
rad/s. All
test are performed in accordance to MIL-PRF-19500
and test method
1019 of
MIL-STD-750 for total Ionizing dose.
–
Each wafer of each lot is tested, (note 1). The table below provides for each monitored
parameters of the test conditions and the acceptance criteria
Radiation summary
Radiation test (Note 1)
Wafer test
100 krad ESCC
each
Part tested
10 biased + 10 unbiased
0.1 rad/s
Dose rate
Acceptance
MIL-STD-750 method 1019
Optional
Displacement damage
1.
Microsemi MSR products will exceed required testing of
ESCC basic specification 22900
2.
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
POST RADIATION
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector to Base Cutoff Current
V
CB
= 40 V
I
CBO
µA
20
V
CB
= 32 V
0.4
Emitter to Base Cutoff Current
V
EB
= 4.5 V
I
EBO
µA
V
20
0.50
V
EB
= 4 V
Collector to Emitter Breakdown Voltage
I
C
= 10 mA
Forward-Current Transfer Ratio
(2)
I
C
= 10 mA, V
CE
= 0.35 V
I
C
= 30 mA, V
CE
= 0.4 V
V
(BR)CEO
15
[20]
[15]
[20]
[10]
120
120
120
120
[h
FE
]
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 30 mA, I
B
= 3.0 mA
0.23
0.29
V
CE(sat)
V
V
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 30 mA, I
B
= 3.0 mA
V
BE(sat)
0.70
0.98
1.04
(2) See
method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the pre-
and post-radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The [h
FE
] value
can never exceed the pre-radiation minimum h
FE
that it is based upon.
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 5 of 7
MSR2N2369AUB / UBC
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 21 samples per diffusion lot and
10 samples per wafer, one sample being kept as
un-irradiated sample, all of them being fully compliant with the applicable
ESCC generic
and/or detailed specification.
–
Test of 10 pieces by wafer, 10 biased at least 80% of V
reference
, 10 unbiased and 1
kept for
(BR)CEO
–
–
Irradiation at 0.1 rad (Si)/s
Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 20
samples comply
with the post radiation electrical characteristics provided in
Table
4 (post radiation electrical
characteristics for the 2N2369A)
–
Delivery together with the parts of the radiation verification test (RVT) report of the
particular
wafer used to manufacture the products. This RVT includes the value of
each parameter at 30,
50, 70 and 100 krad (Si) and after 24 hour annealing at
room temperature and after an additional
168 hour annealing at 100°C.
Radiation summary
Radiation test (Note 1)
Wafer test
100 krad ESCC
each
Part
10 biased + 10 unbiased
0.1 rad/s
Dose rate
Acceptance
MIL-STD-750 method 1019
Displacement damage
Optional
1. Microsemi
MSR products will exceed required testing of
ESCC basic specification 22900
POST RADIATION- Table 4
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector to Base Cutoff Current
V
CB
= 40 V
I
CBO
µA
20
V
CB
= 32 V
0.4
Emitter to Base Cutoff Current
I
EBO
µA
V
V
EB
= 4.5 V
20
0.50
V
EB
= 4 V
Collector to Emitter Breakdown Voltage
I
C
= 10 mA
Forward-Current Transfer Ratio
(2)
I
C
= 10 mA, V
CE
= 0.35 V
I
C
= 30 mA, V
CE
= 0.4 V
V
(BR)CEO
15
[20]
[15]
[20]
[10]
120
120
120
120
[h
FE
]
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 30 mA, I
B
= 3.0 mA
0.23
0.29
V
CE(sat)
V
V
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 30 mA, I
B
= 3.0 mA
V
BE(sat)
0.70
0.98
1.04
1.
This value is determined from
∆
(1/hfe) using pre & post radiation values of hfe.
[hfe] should not exceed the pre- radiation minimum
hfe.
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 6 of 7
MSR2N2369AUB / UBC
PACKAGE DIMENSIONS
Dimensions
millimeters
Dimensions
Symbo
l
inch
Note
Symbol
inch
millimeters
Note
Min
0.046
0.115
0.095
–
Max
Min
Max
1.42
3.25
2.74
3.25
2.74
0.97
0.89
Min
Max
Min
Max
0.99
2.01
0.61
0.20
0.31
0.056
BH
BL
0.056
0.128
0.108
0.128
0.108
0.038
0.035
1.17
2.92
2.41
–
LS1
LS2
LW
r
0.035
0.039
0.079
0.024
0.008
0.012
0.022
0.89
0.071
1.80
BW
CL
0.016
0.41
–
–
–
–
–
–
CW
LL1
LL2
–
–
r1
0.022
0.014
0.56
0.36
r2
NOTES:
1. Dimensions
are in inches.
Millimeters are given for information only.
2. Ceramic
package only.
3. Hatched
areas on package denote metallized areas.
4. Pad
1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding not connected to ceramic lid.
5. In
accordance with ASME Y14.5M, diameters are equivalent to
Φ
x symbology.
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 7 of 7
