Microchip-Tech-JANSR2N5152U3
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JANS 2N5152U3 and JANS 2N5154U3
Qualified Levels:
RADIATION HARDENED
JANSM, JANSD,
JANSP, JANSL,
JANSR, JANSF
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
DESCRIPTION
These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation
Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi
also offers numerous other products to meet higher and lower power voltage regulation
applications.
FEATURES
U3
(SMD-0.5)
Package
•
•
JEDEC registered 2N5152 and 2N5154.
JANS RHA qualifications are available per MIL-PRF-19500/544.
Also available in:
TO-5 Package
(long-leaded)
JANS_2N5152L &
JANS_2N5154L
APPLICATIONS / BENEFITS
TO-39 Package
(leaded)
•
•
•
•
High frequency operation.
Lightweight.
JANS_2N5152 &
JANS_2N5154
High-speed power-switching applications.
High-reliability applications.
MAXIMUM RATINGS
Parameters/Test Conditions
Symbol
Value
Unit
ºC
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Reverse Pulse Energy
(1)
T
J
and T
STG
R
Ө
JA
-65 to +200
175
10
15
2
ºC/W
ºC/W
mJ
A
R
Ө
JC
MSC – Lawrence
6 Lake Street,
Collector Current (dc)
I
C
Collector to base voltage (static), emitter open
Collector to emitter voltage (static) base open
Emitter to base voltage (static) collector open
Steady-State Power Dissipation @ T
A
= +25 ºC
Steady-State Power Dissipation @ T
C
= +25 ºC
V
CBO
V
CEO
V
EBO
P
D
100
80
5.5
1
V
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
V
V
Fax: (978) 689-0803
W
P
D
10
W
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
Notes:
1. This
rating is based on the capability of the transistors to operate safely in the unclamped inductive load
energy test circuit.
Website:
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 1 of 8
JANS 2N5152U3 and JANS 2N5154U3
MECHANICAL and PACKAGING
CASE: Ceramic
and gold over nickel plated steel.
•
•
•
•
•
•
TERMINALS: Gold
over nickel plated tungsten/copper.
MARKING: Part
number, date code, A = anode.
WEIGHT: 0.9
grams.
PART NOMENCLATURE
JANSM 2N5152
U3
Reliability Level
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
SMD Surface Mount Package
JEDEC type number
table)
SYMBOLS & DEFINITIONS
Definition
Symbol
C
obo
I
CEO
I
CEX
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
I
EBO
h
FE
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
V
CEO
V
CBO
V
EBO
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 2 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS
@
T
A
= +25 ºC unless otherwise noted.
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
I
C
= 100 mA, I
B
= 0
Symbol
Min.
Max.
Unit
V
(BR)CEO
80
V
Emitter-Base Cutoff Current
V
EB
= 4.0 V, I
C
= 0
V
EB
= 5.5 V, I
C
= 0
1.0
1.0
µA
mA
I
EBO
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
BE
= 0
V
CE
= 100 V, V
BE
= 0
Collector-Emitter Cutoff Current
V
CE
= 40 V, I
B
= 0
1.0
1.0
µA
mA
I
CES
I
CEO
50
µA
ON CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5 V
2N5152U3
2N5154U3
2N5152U3
2N5154U3
2N5152U3
2N5154U3
20
50
30
70
20
40
—
—
90
200
—
I
C
= 2.5 A, V
CE
= 5 V
I
C
= 5A, V
CE
= 5V
h
FE
—
Collector-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5.0 A, I
B
= 500 mA
Base-Emitter Voltage Non-Saturation
I
C
= 2.5 A, V
CE
= 5 V
Base-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA
0.75
1.5
V
CE(sat)
V
BE
V
V
V
1.45
1.45
2.2
V
BE(sat)
I
C
= 5.0 A, I
B
= 500 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer
Ratio
I
C
= 500 mA, V
CE
= 5 V, f = 10 MHz
2N5152U3
2N5154U3
|h
fe
|
6
7
Small-signal short Circuit Forward-Current
Transfer Ratio
I
C
= 100 mA, V
CE
= 5 V, f = 1 KHz
2N5152U3
2N5154U3
h
fe
20
50
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
C
obo
250
pF
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 3 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS
@
T
A
= +25 °C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
I
C
= 5 A, I
B1
= 500 mA
Turn-Off Time
R
L
= 6Ω
t
on
0.5
µs
t
off
1.5
µs
Storage Time
I
B2
= -500 mA
t
S
t
f
1.4
0.5
µs
µs
Fall Time
V
BE(OFF)
= 3.7 V
DC Tests
T
C
= +25 °C, t
P
= 1.0 s, 1 Cycle
Test 1
V
CE
= 5.0 V, I
C
= 2.0 A
Test 2
V
CE
= 32 V, I
C
= 310 mA
Test 3
V
CE
= 80 V, I
C
= 12.5 mA
dc Operation
T
C
< 25 ºC
V
CE
– COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 4 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector to Emitter Cutoff Current
V
CE
= 40 V
I
CEO
100
µA
Emitter to Base Cutoff Current
V
EB
= 4 V
I
EBO
V
(BR)CEO
I
CES
2.0
µA
V
Breakdown Voltage, Collector to Emitter
I
C
= 100 mA
80
Collector to Emitter Cutoff Current
V
CE
= 60 V
2.0
2.0
µ
A
mA
Emitter to Base Cutoff Current
I
EBO
V
EB
= 5.5 V
Forward-Current Transfer Ratio
(1)
I
C
= 50 mA, V
CE
= 5 V
2N5152U3
2N5154U3
2N5152U3
2N5154U3
2N5152U3
2N5154U3
[10]
[25]
[15]
[35]
[10]
[20]
I
C
= 2.5 A, V
CE
= 5 V
90
[h
FE
]
200
I
C
= 5 A pulsed, V
CE
= 5 V
Base to Emitter voltage (non-saturated)
V
CE
= 5 V, I
C
= 2.5 A, pulsed
1.45
V
BE
V
V
Collector-Emitter Saturation Voltage
I
C
= 2.5 mA, I
B
= 250 mA, pulsed
I
C
= 500 mA, I
B
= 500 mA, pulsed
V
CE(sat)
0.86
1.73
Base-Emitter Saturation Voltage
V
BE(sat)
1.67
2.53
V
I
C
= 2.5 A, I
B
= 250 mA, pulsed
I
C
= 5 A, I
B
= 500 mA, pulsed
(1) See
method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the pre-
and post-radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The [h
FE
] value
can never exceed the pre-radiation minimum h
FE
that it is based upon.
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 5 of 8
JANS 2N5152U3 and JANS 2N5154U3
GRAPHS
T
C
(°C) (Case)
FIGURE 1
Temperature-Power Derating Curve
T
A
(°C) (Ambient)
FIGURE 2
Temperature-Power Derating Curve
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 6 of 8
JANS 2N5152U3 and JANS 2N5154U3
GRAPHS (continued)
Time (sec)
FIGURE 3
Maximum Thermal Impedance (R
Ө
JC
)
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 7 of 8
JANS 2N5152U3 and JANS 2N5154U3
PACKAGE DIMENSIONS
NOTES:
1. Dimensions
are in inches.
2. Millimeters
are given for general information only.
3. In
accordance with ASME Y14.5M, diameters are equivalent to
Φ
x
symbology.
DIMENSIONS
MILLIMETERS
Min Max
10.03 10.29
Symbol
INCH
Min
.395
.291
.112
.010
.220
.115
Max
.405
BL
BW
CH
LH
LL1
.301
.124
.020
.230
.125
7.39
2.84
0.25
5.59
2.92
7.65
3.15
0.51
5.84
3.18
LL2
LS1
LS2
3.81 BSC
1.91 BSC
.150 BSC
.075 BSC
LW1
LW2
Q1
.281
.090
.030
.291
.100
7.14
7.39
2.54
2.29
0.76
0.76
Q2
.030
Schematic
Term 1
Term 2
Term 3
Cathode
Anode (See Schematic)
Anode (See Schematic)
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 8 of 8
