Microchip-Tech-JANTX2N1711S

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Microchip-Tech-JANTX2N1711S
TECHNICAL DATA  
NPN
L
OW
P
O
W
E
R
S
I
LICON TRAN
S
I
S
T
OR  
Qualified per MI
L
–
P
RF
–
1
9500/ 225  
D
e
v
i
c
es  
Qualified
L
e
v
e
l  
JAN  
JANTX  
2N1711  
2N1890  
MAXIMUM RATINGS  
Ratings  
Symbol 2N1711 2N1890
 
Unit  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
75  
100  
Vdc  
V

CBO  

V

EBO  

I

C  

7.0  
Vdc  
500  
mAdc  
Total Power Dissipation  
@ T

A

= +25

0

C

(1)  

@ T

C

= +25

0

C

(2)  

0.8  
3.0  
W
W

0

C  
P

T  

Operating & Storage Junction Temperature Range  
-65 to +200  
T

J

,

T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  

0

C/W  
Thermal Impedance  
58  
Z
q
JX  
TO-5*  
1) Derate linearly 4.57 mW/

0

C for T

A

> 25

0

C  
2) Derate linearly 17.2 mW/

0

C for T

C

> 25

0

C  
*See appendix A for package  
outline  
ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Symbol  
Min.  
Max.  
Unit  
Vdc  
Vdc  
Vdc  
I

C

= 100
m
Adc  
2N1711, S  
2N1890, S  
V

(BR)  

75  
100  
CBO  
Collector-Emitter Breakdown Voltage  
R

BE

= 10
W
, I

C

= 100 mAdc  
2N1711, S  
2N1890, S  
V

(BR)  

50  
80  
CER  
Collector-Emitter Breakdown Voltage  
I

C

= 30 mAdc  
2N1711, S  
2N1890, S  
V

(BR)  

30  
60  
CEO  
Emitter-Base Breakdown Voltage  
I

E

= 100
m
Adc  
Vdc  
V

(BR)  

7.0  
EBO  
Collector-Base Cutoff Current  
V

CB

= 60 Vdc  
V

CB

= 80 Vdc  
h
Adc  
2N1711  
2N1890  
I

CBO  

10  
10  
Emitter-Base Cutoff Current  
V

EB

= 5.0 Vdc  
I

EBO  

h
Adc  
5.0  
6 Lake Street, Lawrence, MA
 
01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N1711, 2N1890 JAN SERIES  
Symbol  
Characteristics  
ON CHARACTERISTICS

(3)  

Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
I

C

= 10
m
Adc, V

CE

= 10 Vdc  
I

C

= 150 mAdc, V

CE

= 10 Vdc  
I

C

= 500 mAdc, V

CE

= 10 Vdc  
Collector-Emitter Saturation Voltage  
I

C

= 150 mAdc, I

B

= 15 mAdc  
20  
100  
50  
h

FE  

300  
2N1711, S  
Vdc  
Vdc  
2N1711, S  
2N1890, S  
2N1890, S  
V

CE(sat)  

1.5  
5.0  
1.2  
I

C

= 50 mAdc, I

B

= 5.0 mAdc  
Base-Emitter Saturation Voltage  
I

C

= 150 mAdc, I

B

= 15 mAdc  
V

BE(sat)  

1.3  
0.9  
I

C

= 50 mAdc, I

B

= 5.0 mVdc  
2N1890, S  
DYNAMIC CHARACTERISTICS  
Small-Signal Short-Circuit Forward-Current Transfer Ratio  
I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc  
I

C

= 5.0 mAdc, V

CE

= 10 Vdc  
h

fe  

80  
90  
200  
270  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward-Current Transfer Ratio  
I

C

= 50 mAdc, V

CE

= 10 Vdc; f = 20 MHz  
Small-Signal Short-Circuit Input Impedance  
I

C

= 5.0 mAdc, V

CB

= 10 Vdc  
½
h

fe

½  
3.5  
4.0  
12  
W
h

ib  

8.0  
Small-Signal Short-Circuit Output Admittance  
I

C

= 5.0 mAdc, V

CB

= 10 Vdc  
h

ob  

mW  
2N1711, S  
2N1890, S  
1.0  
.03  
Output Capacitance  
pF  
V

CB

= 10 Vdc, I

E

= 0, 100 kHz
£
f
£
1.0 MHz  
2N1711, S  
2N1890, S  
C

obo  

8.0  
5.0  
25  
15  
SWITCHING CHARACTERISTICS  
Turn-On Time + Turn-Off Time  

t

on +

t

off  
h
s  
(See figure 1 of MIL-PRF-19500/225)  
30  
(3) Pulse Test: Pulse Width 250 to 350
m
s, Duty Cycle
£
2.0%.  
6 Lake Street, Lawrence, MA
 
01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2