Microchip-Tech-JANTX2N3810L
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
DEVICES
LEVELS
2N3810
2N3811
JAN
2N3810L
2N3810U
2N3811L
2N3811U
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
60
Unit
Vdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
Vdc
5.0
50
Vdc
mAdc
One
Both
Section
1
Sections
2
P
T
200
350
mW
°C
Total Power Dissipation
@ T
A
= +25
°C
Operating & Storage Junction Temperature
Range
T
J
, T
stg
-65 to +200
TO-78
Note:
1. Derate
linearly 1.143mW/°C for T
A
> +25°C (one section)
2. Derate
linearly 2.00mW/°C for T
A
> +25°C
(both sections)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V
(BR)CEO
60
Vdc
I
C
= 100
μ
Adc
Collector-Base Cutoff Current
V
CB
= 50Vdc
η
Adc
μ
Adc
10
10
I
CBO
V
CB
= 60Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 5.0Vdc
10
10
η
Adc
μ
Adc
I
EBO
T4-LDS-0118 Rev. 1 (091095)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
2N3810, 2N3810L , 2N3810U
h
FE
100
150
150
125
I
C
= 10
μ
Adc, V
CE
= 5.0Vdc
I
C
= 100
μ
Adc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc
450
450
2N3811, 2N3811L, 2N3811U
h
FE
75
I
C
= 1.0
μ
Adc, V
CE
= 5.0Vdc
I
C
= 10
μ
Adc, V
CE
= 5.0Vdc
I
C
= 100
μ
Adc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc
225
300
300
250
900
900
Collector-Emitter Saturation Voltage
0.2
0.25
I
C
= 100
μ
Adc, I
B
= 10
μ
Adc
I
C
= 1.0mAdc, I
B
= 100
μ
Adc
V
CE(sat)
Vdc
Base-Emitter Saturation Voltage
0.7
0.8
I
C
= 100
μ
Adc, I
B
= 10
μ
Adc
I
C
= 1.0mAdc, I
B
= 100
μ
Adc
V
BE(sat)
Vdc
Vdc
Base-Emitter Non-Saturation Voltage
V
BE
0.7
V
CE
= 5.0Adc, I
C
= 100
μ
Adc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
|h
fe
|
1.0
1.0
I
C
= 500
μ
Adc, V
CE
= 5.0Vdc, f = 30MHz
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 100MHz
5.0
Small-Signal Short Circuit Forward Current Transfer Ratio
150
300
600
900
h
fe
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
Small-Signal Short Circuit Input Impedance
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
3.0
3.0
30
40
h
je
k
Ω
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
Small-Signal Short Circuit Output Admittance
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
h
oe
μ
mhos
pF
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
5.0
60
Output Capacitance
C
obo
5.0
8.0
V
CB
= 5.0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
C
Ibo
pF
V
EB
= 5.0Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
T4-LDS-0118 Rev. 1 (091095)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
DYNAMIC CHARACTERISTICS (cont.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Noise Figure
2N3810, L, U
F
1
7.0
I
C
= 100
μ
Adc, V
CE
= 10Vdc, f = 100Hz, R
G
= 3.0k
Ω
dB
2N3810, L, U
2N3810, L, U
2N3810, L, U
F
2
F
3
F
4
3.0
2.5
3.5
I
C
= 100
μ
Adc, V
CE
= 10Vdc, f = 1.0kHz, R
G
= 3.0k
Ω
I
C
= 100
μ
Adc, V
CE
= 10Vdc, f = 10kHz, R
G
= 3.0k
Ω
I
C
= 100
μ
Adc, V
CE
= 10Vdc, f = 10Hz to 15.7kHz, R
G
= 3.0k
Ω
2N3811, L, U
2N3811, L, U
2N3811, L, U
2N3811, L, U
F
1
F
2
F
3
F
4
4.0
1.5
2.0
2.5
I
C
= 100
μ
Adc, V
CE
= 10Vdc, f = 100Hz, R
G
= 3.0k
Ω
I
C
= 100
μ
Adc, V
CE
= 10Vdc, f = 1.0kHz, R
G
= 3.0k
Ω
I
C
= 100
μ
Adc, V
CE
= 10Vdc, f = 10kHz, R
G
= 3.0k
Ω
I
C
= 100
μ
Adc, V
CE
= 10Vdc, f = 10Hz to 15.7kHz, R
G
= 3.0k
Ω
dB
T4-LDS-0118 Rev. 1 (091095)
Page 3 of 3
