Microchip-Tech-JANTX2N4033UB

TECHNICAL DATA  

PNP S

I

LICON

S

W

I

TCHING TRAN

S

I

S

T

OR  

Qualified per MI

L

–

P

RF

–

1

9500/ 512  

D

e

v

i

c

es  

Qualified

L

e

v

e

l  

JAN  

2N4029  

2N4033  

JANTX  

JANTXV  

MAXIMUM RATINGS  

Ratings  

Symbol  

V

CEO  

V

CBO  

V

EBO  

I

C  

VALUE  

Unit  

Vdc  

Vdc  

Vdc  

Collector-Emitter Voltage  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

80  

80  

5.0  

1.0  

TO-18* (TO-206AA)  

Adc  

2N4029  

2N4029

1

2N4033

2  

Total Power Dissipation

 

@ T

A

= +25

0

C  

0.5  

0.8  

W

P

T  

Operating & Storage Junction Temperature Range  

-55 to +200  

T

J

,

T  

stg  

THERMAL CHARACTERISTICS  

Characteristics  

Symbol  

Max.  

Unit  

Thermal Resistance, Junction-to-Case  

25.0  

R

q

JC  

TO-39* (TO-205AD)  

2N4033  

1) Derate linearly 2.86 mW/

0

C for T

A

> +25

0

C  

2) Derate linearly 4.56 mW/

0

C for T

A

> +25

0

C  

*See appendix A for  

package outline  

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)  

Characteristics  

Symbol  

Min.  

Max.  

Unit  

OFF CHARACTERISTICS  

Collector-Base Cutoff Current  

V

CB

= 80 Vdc  

V

CB

= 60 V

dc  

10  

10  

m

Adc  

h

Adc  

I

CBO  

Emitter-Base Cutoff Current  

25  

10  

m

Adc  

h

Adc  

V

BE

= 5.0 Vdc  

V

BE

= 3.0 Vdc  

I

EBO  

Collector-Emitter Cutoff Voltage  

V

BE

= 40 Vdc; V

CE

= 60 Vdc  

25  

I

CEX  

h

Adc  

6 Lake Street, Lawrence, MA

 

01841  

120101  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

Page 1 of 2  

2N4029, 2N4033 JAN SERIES  

ELECTRICAL CHARACTERISTICS (con’t)  

Characteristics  

ON CHARACTERISTICS

(3)  

Symbol  

Min.  

Max.  

Unit  

Forward-Current Transfer Ratio  

I

C

= 100

m

Adc, V

CE

= 5.0 Vdc  

I

C

= 100 mAdc, V

CE

= 5.0 Vdc  

I

C

= 500 mAdc, V

CE

= 5.0 Vdc  

I

C

= 1.0 Adc, V

CE

= 5.0 Vdc  

Collector-Emitter Saturation Voltage  

I

C

= 150 mAdc, I

B

= 15 mAdc  

I

C

= 500 mAdc, I

B

= 50 mAdc  

I

C

= 1.0 Adc, I

B

= 100 mAdc  

Base-Emitter Voltage  

50  

100  

70  

300  

h

FE  

25  

0.15  

0.50  

1.0  

V

CE(sat)  

V

BE(sat)  

½

h

fe

½

 

Vdc  

Vdc  

0.9  

1.2  

I

C

= 150 mAdc, I

B

= 15 mAdc  

I

C

= 500 mAdc, I

B

= 50 mAdc  

DYNAMIC CHARACTERISTICS  

Magnitude of Common Emitter Small-Signal Short-Circuit  

Forward-Current Transfer Ratio  

I

C

= 50 mAdc, V

CE

= 10 Vdc, f = 100 MHz  

Output Capacitance  

V

CB

= 10 Vdc, I

E

= 0, 100 kHz

£

f

£

1.0 MHz  

Input Capacitance  

V

EB

= 0.5 Vdc, I

C

= 0, 100 kHz

£

f

£

1.0 MHz  

1.5  

6.0  

20  

pF  

pF  

C

obo  

C

ibo  

80  

SWITCHING CHARACTERISTICS  

On-Time  

V

CC

= 31.9 Vdc; I

C

= 500

 

mAdc; I

B1

=

50 mAdc  

Rise Time  

V

CC

= 31.9 Vdc; I

C

= 500 mAdc; I

B1

=

50 mAdc  

(3) Pulse Test: Pulse Width = 300

m

s, Duty Cycle

£

2.0%.  

15  

25  

h

s  

h

s  

6 Lake Street, Lawrence, MA

 

01841  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

120101  

Page 2 of 2