Microchip-Tech-JANTXV2N2060L

TECHNICAL DATA  

UNITIZED DUAL N

P

N S

I

LICON TRAN

S

I

S

T

OR  

Qualified per MI

L

–

P

RF

–

1

9500/ 270  

D

e

v

i

c

es  

Qualified

L

e

v

e

l  

JAN  

JANTX  

JANTXV  

2N2060  

2N2060L  

MAXIMUM RATINGS  

Ratings  

Collector-Emitter Voltage  

Symbol  

V

CEO  

V

CBO  

V

EBO  

I

C  

2N2060  

60  

Unit  

Vdc  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

100  

Vdc  

7.0  

Vdc  

500  

mAdc  

One  

Both  

Section Sections  

Total Power Dissipation  

@ T

A

= +25

0

C

(1)  

@ T

C

= +25

0

C

(2)  

540  

1.5  

600  

2.12  

mW  

W

P

T  

Operating & Storage Junction Temperature Range  

-65 to +200  

T

J

,

T  

stg  

1) Derate linearly 3.08 mW/

0

C for T

A

> 25

0

C for one section, 3.48 mW/

0

C for both sections  

TO-78*  

2) Derate linearly 8.6 mW/

0

C for T

C

> 25

0

C for one section, 12.1 mW/

0

C for both sections  

*See appendix A for  

package outline  

ELECTRICAL CHARACTERISTICS (T

A

= +25

0

C unless otherwise noted)  

Characteristics  

Symbol  

Min.  

Max.  

Unit  

OFF CHARACTERISTICS  

Collector-Emitter Breakdown Voltage

(3)  

R

BE

£

10

W

, I

C

= 10 mAdc  

Collector-Emitter Breakdown Voltage  

I

C

= 30 mAdc  

80  

60  

Vdc  

Vdc  

V

(BR)  

CER  

V

(BR)  

CEO  

Collector-Base Cutoff Current  

V

CB

= 100 Vdc  

V

CB

= 80 Vdc  

10  

2.0  

m

Adc  

h

Adc  

I

CBO  

Emitter-Base Cutoff Current  

V

EB

= 7.0 Vdc  

V

EB

= 5.0 Vdc  

m

Adc  

h

Adc  

10  

2.0  

I

EBO  

6 Lake Street, Lawrence, MA

 

01841  

120101  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

Page 1 of 2  

2N2060, 2N2060L JAN SERIES  

ELECTRICAL CHARACTERISTICS (con’t)  

Characteristics  

ON CHARACTERISTICS

(3)  

Symbol  

Min.  

Max.  

Unit  

Forward-Current Transfer Ratio  

I

C

= 10

m

Adc, V

CE

= 5.0 Vdc  

I

C

= 100

m

Adc, V

CE

= 5.0 Vdc  

I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc  

I

C

= 10 mAdc, V

CE

= 5.0 Vdc  

Collector-Emitter Saturation Voltage  

I

C

= 50 mAdc, I

B

= 5.0 mAdc  

Base-Emitter Saturation Voltage  

I

C

= 50 mAdc, I

B

= 5.0 mAdc  

25  

30  

40  

50  

75  

90  

120  

150  

h

FE  

0.3  

0.9  

Vdc  

Vdc  

V

CE(sat)  

V

BE(sat)  

DYNAMIC CHARACTERISTICS  

Common Emitter Small-Signal Short-Circuit  

Forward-Current Transfer ratio  

3

25  

½

h

fe

½

 

I

C

= 50 mAdc, V

CE

= 10 Vdc, f = 20 MHz  

Small-Signal Short-Circuit Input Impedance  

I

C

= 1.0 mAdc, V

CB

= 5.0 Vdc, f = 1.0 kHz  

Small-Signal Short-Circuit Forward-Current Transfer Ratio  

I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz  

Small-Signal Short-Circuit Input Impedance  

I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz  

Small-Signal Open-Circuit Output Admittance  

I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz  

Input Capacitance  

20  

50  

30  

150  

4,000  

16  

W

h

ib  

h

fe  

1,000  

0

W

m

mhos  

pF  

h

ie  

h

oe  

85  

C

ibo  

C

obo  

V

EB

= 0.5 Vdc, I

E

= 0, 100 kHz

£

f

£

1.0 MHz  

Output Capacitance  

V

CB

= 10 Vdc, I

E

= 0, 100 kHz

£

f

£

1.0 MHz  

(3)Pulse Test:

 

Pulse Width 250 to 350

m

s, Duty

 

Cycle

£

2.0%.  

15  

pF  

6 Lake Street, Lawrence, MA

 

01841  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

120101  

Page 2 of 2