Microchip-Tech-JANTXV2N2484UA

TECHNICAL DATA SHEET  

6 Lake Street, Lawrence, MA 01841  

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  

NPN SILICON LOW POWER TRANSISTOR  

Qualified per MIL-PRF-19500/376  

DEVICES  

LEVELS  

2N2484UA  

2N2484UB  

2N2484UBC *  

JAN  

JANTX  

JANTXV  

JANS  

*

Available to JANS quality level only.  

ABSOLUTE MAXIMUM RATINGS

(T

C

= +25°C unless otherwise noted)  

Parameters / Test Conditions  

Symbol  

Value  

Unit  

Collector-Emitter Voltage  

V

CEO  

V

CBO  

V

EBO  

I

C  

60  

Vdc  

Vdc  

Vdc  

mAdc  

mW  

°C  

Collector-Base Voltage  

Emitter-Base Voltage  

60  

6.0  

Collector Current  

50  

(1)  

Total Power Dissipation @ T

A

= +25°C  

P

T  

360  

TO-18 (TO-206AA)  

2N2484  

Operating & Storage Junction Temperature Range  

T

J

, T

stg  

-65 to +200  

THERMAL CHARACTERISTICS  

Parameters / Test Conditions  

Symbol  

Value  

Unit  

Thermal Resistance, Ambient-to-Case  

2N2484  

2N2484UA  

2N2484UB, UBC  

325  

275  

350  

°C/W  

R

θ

JA  

1. See

 

19500/376 for Thermal Performance Curves.  

2N2484UA  

ELECTRICAL CHARACTERISTICS

(T

A

= +25°C, unless otherwise noted)  

Parameters / Test Conditions  

OFF CHARACTERTICS  

Symbol  

Min.  

Max.  

Unit  

Collector-Emitter Breakdown Voltage  

I

C

= 10mAdc  

V

(BR)CEO  

60  

Vdc  

Collector-Emitter Cutoff Current  

V

CE

= 45Vdc  

I

CES  

5.0  

η

Adc  

2N2484UB, UBC  

(UBC = Ceramic Lid Version)  

Collector-Base Cutoff Current  

5.0  

10  

η

Adc  

μ

Adc  

V

CB

= 45Vdc  

I

CBO  

V

CB

= 60Vdc  

Collector-Emitter Cutoff Current  

I

CEO  

2.0  

η

Adc  

V

CE

= 5.0Vdc  

T4-LDS-0058 Rev. 1 (080853)  

Page 1 of 2  

TECHNICAL DATA SHEET  

6 Lake Street, Lawrence, MA 01841  

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  

NPN SILICON LOW POWER TRANSISTOR  

Qualified per MIL-PRF-19500/376  

ELECTRICAL CHARACTERISTICS

(T

A

= +25°C, unless otherwise noted)  

Parameters / Test Conditions  

OFF CHARACTERISTICS  

Emitter-Base Cutoff Current  

Symbol  

Min.  

Max.  

Unit  

V

EB

= 5.0Vdc  

V

EB

= 6.0Vdc  

2.0  

10  

I

EBO  

η

Adc  

μ

Adc  

ON CHARACTERISTICS

(2)  

Forward-Current Transfer Ratio  

45  

I

C

= 1.0

μ

Adc, V

CE

= 5.0Vdc  

I

C

= 10

μ

Adc, V

CE

= 5.0Vdc  

I

C

= 100

μ

Adc, V

CE

= 5.0Vdc  

I

C

= 500

μ

Adc, V

CE

= 5.0Vdc  

I

C

= 1.0mAdc, V

CE

= 5.0Vdc  

I

C

= 10mAdc, V

CE

= 5.0Vdc  

200  

225  

250  

250  

225  

500  

675  

800  

800  

800  

h

FE  

Collector-Emitter Saturation Voltage  

I

C

= 1.0mAdc, I

B

= 100

μ

Adc  

V

CE(sat)  

0.3  

0.7  

Vdc  

Vdc  

Base-Emitter Voltage  

V

CE

= 5.0Vdc, I

C

= 100

μ

Adc  

V

BE(ON)  

0.5  

DYNAMIC CHARACTERISTICS  

Parameters / Test Conditions  

Symbol  

Min.  

Max.  

Unit  

Forward Current Transfer Ratio  

3.0  

2.0  

I

C

= 50

μ

Adc, V

CE

= 5.0Vdc, f = 5.0MHz  

I

C

= 500

μ

Adc, V

CE

= 5.0Vdc, f = 30MHz  

|h

fe

|  

0.7  

40  

Open Circuit Output Admittance  

I

C

= 1.0mAdc, V

CE

= 5.0Vdc, f = 1.0kHz  

h

oe  

h

re  

μ

mhos  

k

Ω  

Open Circuit Reverse-Voltage Transfer Ratio  

I

C

= 1.0mAdc, V

CE

= 5.0Vdc, f = 1.0kHz  

8.0 x 10

-4  

24  

Input Impedance  

I

C

= 1.0mAdc, V

CE

= 5.0Vdc, f = 1.0kHz  

h

je  

3.5  

Small-Signal Short-Circuit Forward Current Transfer Ratio  

I

C

= 1.0mAdc, V

CE

= 5.0Vdc, f = 1.0kHz  

h

fe  

250  

900  

Output Capacitance  

V

CB

= 5.0Vdc, I

E

= 0, 100kHz

≤

f

≤

1.0MHz  

C

obo  

5.0  

pF  

pF  

Input Capacitance  

V

EB

= 0.5Vdc, I

C

= 0, 100kHz

≤

f

≤

1.0MHz  

C

ibo  

6.0  

(2) Pulse Test: Pulse Width = 300

μ

s, Duty Cycle

≤

2.0%.  

T4-LDS-0058 Rev. 1 (080853)  

Page 2 of 2