Microchip-Tech-JANTXV2N3637

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Microchip-Tech-JANTXV2N3637
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353
 
(0) 65 6840044
 
Fax: +353 (0) 65 6822298  
PNP SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/357  
DEVICES  
LEVELS  
JAN  
2N3634  
2N3635  
2N3636  
2N3637  
2N3634L  
2N3634UB  
2N3635L  
2N3635UB  
2N3636L  
2N3636UB  
2N3637L  
2N3637UB  
JANTX  
JANTXV  
JANS  
ABSOLUTE MAXIMUM RATINGS
(T

C

= +25°C unless otherwise noted)  
2N3634* 2N3636*  
2N3635* 2N3637*  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
V

CEO  

V

CBO  

V

EBO  

I

C  

Unit  
Vdc  
Vdc  
Vdc  
Adc  
140  
140  
5.0  
1.0  
175  
175  
5.0  
1.0  
Collector-Base Voltage  
Emitter-Base Voltage  
TO-5*  
Collector Current  
2N3634L, 2N3635L  
2N3636L, 2N3637L  
Total Power Dissipation  
@ T

A

= +25°C  
@ T

C

= +25°C  
@ T

C

= +25°C  
1.0  
5.0  
1.5  
W
W
W
P

T

**  
UB:  
Operating & Storage Junction Temperature Range  
T

J

, T

stg  

-65 to +200  
°C  
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding  
devices.  
** Consult 19500/357 for De-Rating curves.  
ELECTRICAL CHARACTERISTICS
(T

A

= +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
TO-39* (TO-205AD)  
2N3634, 2N3635  
2N3636, 2N3637  
Collector-Emitter Breakdown Voltage  
I

C

= 10mAdc  
V

(BR)CEO  

Vdc  
2N3634, 2N3635  
2N3636, 2N3637  
140  
175  
Collector-Base Cutoff Current  
V

CB

= 100Vdc  
η
Adc  
μ
Adc  
μ
Adc  
100  
10  
10  
I

CBO  

V
V

CB

= 140Vdc  

CB

= 175Vdc  
2N3634, 2N3635  
2N3636, 2N3637  
3 PIN  
2N3634UB, 2N3635UB  
2N3636UB, 2N3637UB  
Emitter-Base Cutoff Current  

EB

= 3.0Vdc  
V

EB

= 5.0Vdc  
V
50  
10  
η
Adc  
μ
Adc  
I

EBO  

Collector-Emitter cutoff Current  
I

CEO  

10  
μ
Adc  
V

CE

= 100Vdc  
T4-LDS-0156 Rev. 2 (101452)  
Page 1 of 5  

TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353
 
(0) 65 6840044
 
Fax: +353 (0) 65 6822298  
ELECTRICAL CHARACTERISTICS
(T

A

= +25°C, unless otherwise noted)  
Parameters / Test Conditions  
ON CHARACTERISTICS

(1)  

Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
I

C

= 0.1mAdc, V

CE

= 10Vdc  
I

C

= 1.0mAdc, V

CE

= 10Vdc  
I

C

= 10mAdc, V

CE

= 10Vdc  
I

C

= 50mAdc, V

CE

= 10Vdc  
I

C

= 150mAdc, V

CE

= 10Vdc  
2N3634, 2N3636  
2N3635, 2N3637  
25  
45  
50  
50  
30  
150  
300  
h

FE  

I

C

= 0.1mAdc, V

CE

= 10Vdc  
I

C

= 1.0mAdc, V

CE

= 10Vdc  
I

C

= 10mAdc, V

CE

= 10Vdc  
I

C

= 50mAdc, V

CE

= 10Vdc  
I

C

= 150mAdc, V

CE

= 10Vdc  
55  
90  
100  
100  
60  
Collector-Emitter Saturation Voltage  
I

C

= 10mAdc, I

B

= 1.0mAdc  
I

C

= 50mAdc, I

B

= 5.0mAdc  
0.3  
0.6  
V

CE(sat)  

Vdc  
Vdc  
Base-Emitter Saturation Voltage  
I

C

= 10mAdc, I

B

= 1.0mAdc  
I

C

= 50mAdc, I

B

= 5.0mAdc  
0.8  
0.9  
V

BE(sat)  

0.65  
DYNAMIC CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Forward Current Transfer Ratio  
I

C

= 30mAdc, V

CE

= 30Vdc, f = 100MHz  
2N3634, 2N3636  
2N3635, 2N3637  
1.5  
2.0  
8.0  
8.5  
|h

fe

|  
Forward Current Transfer Ratio  
I

C

= 10mAdc, V

CE

= 10Vdc, f = 1.0kHz  
2N3634, 2N3636  
2N3635, 2N3637  
40  
80  
160  
320  
h

fe  

Small-Signal Short-Circuit Input Impedance  
I

C

= 10mAdc, V

CE

= 10Vdc, f = 1.0kHz  
2N3634, 2N3636  
2N3635, 2N3637  
100  
200  
600  
1200  
h

ie  

h

oe  

Ω
μ
s  
pF  
Small-Signal Open-Circuit Input Impedance  
I

C

= 10mAdc, V

CE

= 10Vdc, f = 1.0kHz  
200  
10  
Output Capacitance  
V

CB

= 20Vdc, I

E

= 0, 100 kHz
≤
f
≤
1.0MHz  
C

obo  

Input Capacitance  
C

ibo  

75  
pF  
V

EB

= 1.0Vdc, I

C

= 0, 100 kHz
≤
f
≤
1.0MHz  
Noise Figure  
f = 100Hz  
f = 1.0kHz  
f = 10kHz  
5.0  
3.0  
3.0  
V

CE

= 10Vdc, I

C

= 0.5mAdc, R

g

= 1.0k
Ω  
NF  
dB  
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%  
T4-LDS-0156 Rev. 2 (101452)  
Page 2 of 5  

TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353
 
(0) 65 6840044
 
Fax: +353 (0) 65 6822298  
SAFE OPERATING AREA  
DC Tests  
T

C

= 25°C, 1 Cycle, t = 1.0s  
Test 1  
V

CE

= 100Vdc, I

C

= 30mAdc  
2N3634, 2N3635  
2N3636, 2N3637  
V

CE

= 130Vdc, I

C

= 20mAdc  
Test 2  
V

CE

= 50Vdc, I

C

= 95mAdc  
Test 3  
V

CE

= 5.0Vdc, I

C

= 1.0Adc  
T4-LDS-0156 Rev. 2 (101452)  
Page 3 of 5  

TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353
 
(0) 65 6840044
 
Fax: +353 (0) 65 6822298  
PACKAGE DIMENSIONS  
Dimensions  
Millimeters  
Ltr  
Inches  
Notes  
Min  
.305  
.240  
.335  
Max  
Min  
Max  
8.51  
6.60  
9.40  
CD  
CH  
HD  
LC  
.335  
.260  
.370  
7.75  
6.10  
8.51  
.200 TYP  
5.08 TYP  
7
6
LD  
LL  
LU  
L

1  

L

2  

P
.016  
.016  
.021  
0.41  
0.53  
See notes 7, 9, and 10  
.019  
050  
0.41  
0.48  
1.27  
7
7
7
5
.250  
.100  
6.35  
2.54  
Q
r
TL  
TW  
α
.050  
.010  
.045  
.034  
1.27  
0.254  
1.14  
8
4
3
6
.029  
.028  
0.74  
0.71  
0.86  
45° TP  
45° TP  
Term 1  
Term 2  
Term 3  
Emitter  
Base  
Collector  
NOTES:  
1. Dimensions
 
are in inches.  
2.
Millimeters are given for general information only.  
3.
Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).  
4.
TL measured from maximum HD.  
5.
CD shall not vary more than ±.010 inch (0.25 mm) in zone P.
 
This zone is controlled for automatic handling.  
6.
Leads at gauge plane .054 – .055 inch (1.37 – 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of  
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC.
 
The device may be measured by  
direct methods or by gauge and gauging procedure.  
7.
LU applies between L1 and L2. LD applies between L2 and L minimum.
 
Diameter is uncontrolled in L1 and beyond LL  
minimum.  
8.
r (radius) applies to both inside corners of tab.  
9.
For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)  
maximum (TO-39).  
10.
For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)  
maximum (TO-5).  
11.
In accordance with ASME Y14.5M, diameters are equivalent to
φ
x symbology.  
FIGURE 1:
 
Physical dimensions (TO-5 and TO-39)  
T4-LDS-0156 Rev. 2 (101452)  
Page 4 of 5  

TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353
 
(0) 65 6840044
 
Fax: +353 (0) 65 6822298  
NOTES:  
Dimensions  
1. Dimensions
 
are in inches.  
Ltr  
Inches  
Millimeters  
Min  
1.17  
2.92  
2.16  
Notes  
2. Millimeters
 
are given for general information only.  
3. Hatched
 
areas on package denote metallized areas.  
4. Pad
 
1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 =  
Shielding connected to the lid.  
5. In
 
accordance with ASME Y14.5M, diameters are.  
equivalent to
φ
x symbology  
Min  
.046  
.115  
.085  
Max  
.056  
.128  
.108  
.128  
.108  
.038  
.035  
.040  
.079  
.024  
.008  
.012  
.022  
Max  
1.42  
3.25  
2.74  
3.25  
2.74  
0.96  
0.89  
1.02  
2.01  
0.61  
.203  
.305  
.559  
BH  
BL  
BW  
CL  
CW  
LL

1  

LL

2  

LS

1  

LS

2  

LW  
r
.022  
.017  
.036  
.071  
.016  
0.56  
0.43  
0.91  
1.81  
0.41  
r

1  

r

2  

FIGURE 2:
 
Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version).  
T4-LDS-0156 Rev. 2 (101452)  
Page 5 of 5