Microchip-Tech-LND150N3-G-P014

Part #	Microchip-Tech-LND150N3-G-P014
Download	Microchip-Tech-LND150N3-G-P014

Supertex inc.

LND150

N-Channel Depletion-Mode

DMOS FET

Features

General Description

The LND150 is a high voltage N-channel depletion mode

(normally-on) transistor utilizing Supertex’s lateral DMOS

technology. The gate is ESD protected.

►

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source-drain diode

High input impedance and low C

ISS

ESD gate protection

The LND150 is ideal for high voltage applications in the

areas of normally-on switches, precision constant current

sources, voltage ramp generation and ampliﬁcation.

Applications

►

Solid state relays

►

Normally-on switches

►

Converters

►

Power supply circuits

►

Constant current sources

►

Input protection circuits

Product Summary

Ordering Information

DS(ON)

DSS

(min)

DSX

/BV

DGX

Part Number

Package Options

Packing

(V)

(max)

LND150K1-G

TO-236AB (SOT-23)

TO-92

3000/Reel

1000/Bag

2000/Reel

500

1.0k

1.0mA

LND150N3-G

LND150N3-G P002

LND150N3-G P003

LND150N3-G P005

LND150N3-G P013

LND150N3-G P014

LND150N8-G

TO-92

Pin Conﬁguration

TO-92

DRAIN

TO-92

SOURCE

TO-243AA (SOT-89)

GATE

-G denotes a lead (Pb)-free / RoHS compliant package

TO-92

Absolute Maximum Ratings

Parameter

SOURCE

Value

SOURCE

Drain-to-source

DSX

DGX

DRAIN

SOURCE

GATE

Drain-to-gate

GATE

Gate-to-source

±20V

TO-236AB (SOT-23)

TO-243AA (SOT-89)

Operating and storage temperature

-55

C to +150

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Product Marking

D 1 5 0

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

W = Code for Week Sealed

= “Green” Packaging

W = Code for Week Sealed

= “Green” Packaging

NDEW

LN1EW

TO-236AB (SOT-23)

TO-92

TO-243AA (SOT-89)

Packages may or may not include the following marks: Si or

Doc.# DSFP-LND150

C041114

Supertex inc.

www.supertex.com

LND150

Thermal Characteristics

Power Dissipation

†

(

C/W)

(mA)

DRM

(continuous)

†

(mA)

(pulsed)

(mA)

= 25

(W)

Package

(mA)

TO-236AB (SOT-23)

TO-92

0.36

0.74

1.6

‡

203

132

133

TO-243AA (SOT-89)

Notes:

†

(continuous) is limited by max rated T

Electrical Characteristics

= 25

C unless otherwise speciﬁed)

Sym

Parameter

Min

Typ

Max Units

Conditions

DSX

Drain-to-source breakdown voltage

500

–

= -10V, I

= 1.0mA

GS(OFF)

Gate-to-source off voltage

-1.0

-3.0

= 25V, I

= 100nA

ΔV

GS(OFF)

Change in V

GS(OFF)

with temperature

–

5.0 mV/

C V

= 25V, I

= 100nA

GSS

D(OFF)

DSS

Gate body leakage current

100

= ± 20

= 0V

= -10V, V

= 450V

Drain-to-source leakage current

_{DS
= 0.8V Max Rating,}

–

100

µA

= -10V, T

= 125

= 0

= 25V

= 0

= 0.5mA

Saturated drain-to-source current

1.0

–

3.0

DS(ON)

Static drain-to-source on-state resistance

–

850 1000

ΔR

DS(ON)

Change in R

DS(ON)

with temperature

–

1.2

–

C V

= 0

= 0.5mA

ISS

OSS

RSS

d(ON)

Forward transductance

Input capacitance

1.0

2.0

7.5

2.0

0.5

0.09

0.45

0.1

1.3

–

= 0

= 1.0mA

–

3.5

1.0

–

= -10V,

= 25V,

f = 1.0MHz

Common source output capacitance

Reverse transfer capacitance

Turn-on delay time

= 25V,

= 1.0mA,

GEN

= 25Ω

Rise time

–

µs

d(OFF)

Turn-off delay time

–

Fall time

–

Diode forward voltage drop

Reverse recovery time

0.9

–

= -10V, I

= 1.0mA

= -10V, I

= 1.0mA

200

Notes:

1. All

D.C. parameters 100% tested at 25

C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All

A.C. parameters sample tested.

Switching Waveforms and Test Circuit

VDD

90%

INPUT

Pulse

10%

Generator

-10V

OUTPUT

(ON)

d(ON)

(OFF)

d(OFF)

GEN

VDD

INPUT

D.U.

10%

OUTPUT

90%

Doc.# DSFP-LND150

C041114

Supertex inc.

www.supertex.com

LND150

Typical Performance Curves

Output Characteristics

Saturation Characteristics

= 1.0V

0.5V

-0.5V

-1.0V

-0.5V

-1.0V

250

500

(V)

Transconductance vs. Drain Current

Power Dissipation vs. Ambient

mperature

= 400V

TO-243AA

= -55°C

25°C

TO-92

125°C

TO-236AB

100

150

(milliamps)

(°C)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

100

1.0

0.8

0.6

0.4

TO-243AA (DC)

Pulsed

TO-243AA

= 25°C

= 1.2W

TO-92 (DC)

TO-236 (DC)

TO-92

= 1.0W

= 25°C

0.2

= 25°C

300µs pulse

2% duty cycle

0.1

100

1000

0.001

0.01

0.1

1.0

(V)

(seconds)

Doc.# DSFP-LND150

C041114

Supertex inc.

www.supertex.com

LND150

Typical Performance Curves

(cont.)

DSS

Variation with

mperature

vs R

SOURCE

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

= -5.0V

1.1

↓

25°C

LND1

125°C

SOURCE

1.0

0.9

-50

100

150

100

10K

100K

(

SOURCE

(Ω)

Transfer Characteristics

GS(OFF)

and R

Variation with Temperature

1.8

= 400V

2.0

1.6

= -55°C

DS(ON)

@ I

= 1.0mA

1.6

25°C

1.4

125°C

1.2

0.8

GS(OFF)

@ 100nA

1.0

0.4

0.8

-50

100

150

-1

(V)

(

Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics

_{GS
= -10V}

8.7pF

ISS

= 20V

40V

60V

OSS

RSS

-5

0.1

0.2

0.3

(V)

(nanocoulombs)

Doc.# DSFP-LND150

C041114

Supertex inc.

www.supertex.com

LND150

3-Lead TO-236AB (SOT-23) Package Outline (K1)

2.90×1.30mm body, 1.12mm height (max), 1.90mm pitch

Gauge

Plane

0.25

Seating

Plane

View B

Top View

View B

Seating

Plane

View A – A

Side View

Symbol

0.01

–

2.10

–

MIN

NOM

MAX

0.89

–

0.88

0.95

1.02

0.30

–

2.80

2.90

3.04

1.20

1.30

1.40

0.20

†

0.50

0.60

Dimension

(mm)

0.95

BSC

1.90

BSC

0.54

REF

1.12

0.10

0.50

2.64

JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#:

DSPD-3TO236ABK1, Version C041309.

Doc.# DSFP-LND150

C041114

Supertex inc.

www.supertex.com

LND150

3-Lead TO-92 Package Outline (N3)

Seating

Plane

Side View

Front View

Bottom View

Symbol

.170

–

.014

†

–

.175

–

.125

–

.095

–

.045

–

.500

–

MIN

NOM

MAX

.014

†

–

.080

–

Dimensions

(inches)

.210

.022

†

.022

†

.205

.165

.105

.055

.610*

JEDEC Registration TO-92.

* This dimension is not speciﬁed in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#:

DSPD-3TO92N3, Version E041009.

Doc.# DSFP-LND150

C041114

Supertex inc.

www.supertex.com

LND150

3-Lead TO-243AA (SOT-89) Package Outline (N8)

Vqr”Xkgy

Ukfg”Xkgy

Symbol

1.40

–

0.44

–

0.36

–

0.35

–

1.62

–

2.29

–

2.00

†

–

3.94

–

0.73

†

–

MIN

NOM

MAX

4.40

–

Dimensions

(mm)

1.50

BSC

3.00

BSC

1.60

0.56

0.48

0.44

4.60

1.83

2.60

2.29

4.25

1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986.

†

This dimension differs from the JEDEC drawing

Drawings not to scale

Supertex Doc. #:

DSPD-3TO243AAN8, Version F111010.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

information go to

http://www.supertex.com/packaging.html

Supertex inc.

does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.”

Supertex inc.

does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the

Supertex inc.

(website: http//www.supertex.com)

Supertex inc

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

l: 408-222-8888

www.supertex.com

Doc.# DSFP-LND150

C041114

Microchip-Tech-LND150N3-G-P014

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