Microchip-Tech-MMA040AA
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MMA040AA Datasheet
DC
–
28 GHz GaAs MMIC Distributed Amplifier
DC–28 GHz GaAs MMIC Distributed Amplifier
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DC–28 GHz GaAs MMIC Distributed Amplifier
Revision History
The revision history describes the changes that were implemented in the document. The changes
are listed by revision, starting with the most current publication.
1.1
Revision 2.0
Revision 2.0 was the first publication of this document.
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DC–28 GHz GaAs MMIC Distributed Amplifier
Contents
4
DC–28 GHz GaAs MMIC Distributed Amplifier
List of Figures
5
DC–28 GHz GaAs MMIC Distributed Amplifier
List of Tables
6
DC–28 GHz GaAs MMIC Distributed Amplifier
2 Product
Overview
MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC)
pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that
operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise figure,
and 27 dBm OIP3, while requiring only 60 mA from a 8 V supply. The MMA040AA amplifier features
compact die size and I/Os that are internally matched to 50 Ω, facilitating easy integration into
multi-chip modules (MCMs).
2.1
Functional Block Diagram
The following illustration shows the primary functional blocks of the MMA040AA device.
Figure 1
Functional Block Diagram
2.2
Applications
The MMA040AA device is designed for the following applications:
• Test instrumentation
• Telecom infrastructure
• Microwave radio and VSAT
• Microwave communications
2.3
Key Features
The following are key features of the MMA040AA device:
• Frequency range: DC to 28 GHz
• Flat gain: 16.5 dB
• High IP3: 27 dBm
• Low noise: 2.5 dB at 10 GHz
• Supply voltage: 7 V at 60 mA
• 50 Ω matched I/O
•
Compact die size: 3 mm × 1.32 mm × 0.1 mm
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DC–28 GHz GaAs MMIC Distributed Amplifier
3 Electrical
Specifications
3.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings at 25 °C unless otherwise specified.
Table 1
Absolute Maximum Ratings
Parameter
Rating
Storage temperature
Operating temperature
Drain bias voltage, (V
D
)
Gate bias voltages, (V
G1
and V
G2
)
V
D
current (I
DD
)
–
65 to 150 °C
–
55 to 85 °C
9 V
–
2 to 0.5 V
300 mA
22 dBm
1.1 W
RF input power
DC power dissipation (T = 85 °C)
Channel temperature
Thermal impedance
150 °C
60 °C/W
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DC–28 GHz GaAs MMIC Distributed Amplifier
3.2
Typical Electrical Performance
The following table shows the typical electrical characteristics of the MMA040AA device at 25 °C,
where V
DD
is 8 V and I
DD
is 60 mA.
All measurements are derived from the RF probed die according
to the assembly diagram shown in section 4.4, unless otherwise noted.
Table 2 Typical Electrical Performance
Parameter
Frequency Range
Min
DC
Typ
Max
Units
GHz
dB
Operational frequency range
Gain
28
DC-6 GHz
15.5
15.5
15
16.5
16.5
16
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
dB
dB
Gain flatness
±0.2
±0.2
±0.2
0.007
0.007
0.007
2.5
2
dB
6 GHz-12 GHz
12 GHz-20 GHz
dB
dB
Gain variation over temperature
DC-6 GHz
6 GHz-12 GHz
dB/°C
dB/°C
dB/°C
12 GHz-20 GHz
DC-6 GHz
Noise figure
Input return loss
Output return loss
P1dB
3
dB
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
2.5
3.5
dB
3
dB
15
dB
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
15
dB
12
dB
12
dB
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
15
dB
18
dB
15
16
dBm
dBm
dBm
dBm
dBm
dBm
dBm
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
15.5
14
16
15
Psat
17
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
18
17
OIP3
27
6 GHz-12 GHz
12 GHz-20 GHz
27
dBm
dBm
27.5
8
V
DD
(drain voltage supply)
I
DD
(drain current)
V
60
mA
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DC–28 GHz GaAs MMIC Distributed Amplifier
3.3
Typical Performance Curves
The following graphs show the typical performance curves of the MMA040AA device at 25 °C, unless
otherwise indicated.
Figure 2
Broadband Gain(V
DD
= 8 V, I
DD
= 60mA, T = 25 C
Figure 3
Broadband Gain vs Temperature (V
DD
= 8 V, I
DD
= 60mA)
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DC–28 GHz GaAs MMIC Distributed Amplifier
Figure 4
Gain vs. VDD (IDD = 60 mA, T = 25 °C)
Figure 5
Gain vs. I
DD
(V
DD
= 8 V, T = 25 °C)
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DC–28 GHz GaAs MMIC Distributed Amplifier
Figure 6
Input Return Loss (VDD = 8 V, IDD = 60 mA, T = 25 °C)
Figure 7
Input Return Loss vs. Temperature (VDD = 8 V, IDD = 60 mA)
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DC–28 GHz GaAs MMIC Distributed Amplifier
Figure 9
Return Loss vs. Temperature (VDD = 8 V, IDD = 60 mA)
Figure 10 Noise Figure vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 °C)
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DC–28 GHz GaAs MMIC Distributed Amplifier
Figure 11 Noise Figure vs. VDD (IDD = 60 mA, T = 25 °C)
Figure 12 Noise Figure vs. IDD (VDD = 6 V, T = 25 °C)
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DC–28 GHz GaAs MMIC Distributed Amplifier
Figure 13 P1dB Output Power vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 °C)
Figure 14 P1dB Output Power vs. VDD (IDD = 60 mA, T = 25 °C)
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DC–28 GHz GaAs MMIC Distributed Amplifier
Figure 15 P1dB Output Power vs. IDD (VDD = 8 V, T = 25 °C)
Figure 16 Output IP3 vs. Temperature (VDD = 8 V, IDD = 60 mA)
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DC–28 GHz GaAs MMIC Distributed Amplifier
Figure 17 Output IP3 vs. VDD (IDD = 60 mA, T = 25 °C)
Figure 18 Output IP3 vs. IDD (VDD = 8 V, T = 25 °C)
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DC–28 GHz GaAs MMIC Distributed Amplifier
4 Chip
Outline Drawing, Die Packaging, Bond Pad, and Assembly
Information
4.1
Chip Outline Drawing
The following
illustration shows the chip outline of the MMA040AA device. Dimensions are in μm
and are relative to the zero datum locations shown in the drawing. The minimum bond pad size is
100 μm × 100 μm. Both the bond pad surface and the backside metal are 3 μm gold. The die
thickness is 100 μm. The backside is the DC/RF ground. The airbridge keep
out region is in
crosshatch, and the unlabeled pads should not be bonded.
Figure 19 Outline Drawing
4.2
Die Packaging Information
The following table shows the chip outline of the MMA040AA device. For additional packaging
information, contact your Microsemi sales representative.
Table 3 Die Packaging Information
Standard Format
Waffle Pack
Option Format
Gel Pack
50-100 pieces per pack
50 pieces per pack
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DC–28 GHz GaAs MMIC Distributed Amplifier
4.3
Bond Pad Information
The following table shows the bond pad information of the MMA040AA device.
Table 4 Bond Pad Information
Bond Pad Number
Bond Pad Name
Description
This pad is DC-coupled
and matched to 50 Ω.
2
RFIN
This pin is matched to 50 Ω and
can be used to bias VDD.
9
RFOUT + VDD (optional)
VG1
Gate control for amplifier. Adjust to achieve IDD = 60
mA.
14
Low-frequency termination. Connect bypass capacitors
per application circuit below. (no bias necessary)
Low-frequency termination. Connect bypass capacitors
per application circuit below. (no bias necessary)
Die bottom must be connected to RF/DC ground.
4, 5, 6
11, 12
VD1, VD1A, VD1B
VG1A, VG1B
1, 3, 7, 8, 10, 13
Backside Paddle
GND
RF/DC GND
RF/DC ground.
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DC–28 GHz GaAs MMIC Distributed Amplifier
4.4
Assembly Drawing
The following figure shows the assembly diagram of the MMA040AA device. In the die test assembly
shown, both RFIN and RFOUT ports should utilize bias tees or DC blocks to isolate external circuits
from the IC. V
DD
to the MMA040AA die is supplied through DC bypass caps of >10 nF (the actual
value depends on the low-frequency bandwidth requirements of the application).
Figure 20 Assembly Diagram
Table 5 Bias Sequence
Bias Sequence
1) Set
the gate voltage VG1 to -1V
2) Set
drain voltage VDD to 8V
3) Adjust
the gate voltage until the drain current is 60mA
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DC–28 GHz GaAs MMIC Distributed Amplifier
5 Handling
and Die Attachment Recommendations
Gallium arsenide integrated circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. It is recommended to follow all procedures and guidelines outlined in
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DC–28 GHz GaAs MMIC Distributed Amplifier
6 Ordering
Information
The following table shows the ordering information for the MMA040AA device.
Table 6 Ordering Information
Part Number
Package
Die
MMA040AA
22
