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MMA041PP5 Datasheet
DC
–
25 GHz GaAs MMIC Distributed Low-Noise Amplifier
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
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2
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
Revision History
The revision history describes the changes that were implemented in the document. The changes
are listed by revision, starting with the most current publication.
1.1
Revision 2.0
Revision 2.0 is the second publication of this document released December 2018.
3
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
Contents
4
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
List of Figures
5
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
List of Tables
6
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
2 Product
Overview
MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC)
pseudomorphic high-electron-mobility transistor (pHEMT) distributed low noise amplifier in a
leadless 5 mm × 5 mm surface-mount package that operates between DC and 25 GHz. It is ideal for
test instrumentation, wideband military and space applications.
The amplifier provides a flat gain of
17 dB, 2.5 dB noise figure, and 21 dBm of output power at 1 dBm gain compression while requiring
only 150 mA from a 7 V supply. Output IP3 is typically 35 dBm. The MMA041PP5 amplifier features
RF I/Os that are intern
ally matched to 50 Ω. It is also available in die form as the MMA041AA.
The following image shows the primary functional blocks of the MMA041PP5 device.
Figure 1
Functional Block Diagram
2.1
Applications
The MMA041PP5 device is designed for the following applications:
•
•
•
•
Test and measurement instrumentation
Military and space
Wideband microwave radios
Microwave and millimeter-wave communication systems
2.2
Key Features
The following are key features of the MMA041PP5 device:
•
•
•
•
•
•
•
Frequency range: DC to 25 GHz
High gain: 18 dB
High output IP3: 35 dBm
Low noise figure: 2.5 dB at 10 GHz
Supply voltage: 7 V at 150 mA
50 Ω matched I/O
32-lead 5 mm × 5 mm × 1.2 mm plastic QFN package
7
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
3 Electrical
Specifications
3.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings at 25 °C unless otherwise specified.
Table 1
Absolute Maximum Ratings
Parameter
Rating
Storage temperature
Operating temperature
Drain bias voltage, (V
DD
)
First gate bias voltage, (V
G1
)
Second gate bias voltage, (V
G2
V
D
current (I
DD
)
–
65 to 150 °C
–
55 to 85 °C
8 V
–
2 to 0.5 V
V
DD
+/- 20%
300 mA
)
RF input power
19 dBm
DC power dissipation (T = 85 °C)
Channel temperature
2.4 W
150 °C
Thermal impedance
18 °C/W
8
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
3.2
Typical Electrical Performance
The following table lists the specified electrical performance of the MMA041PP5 device at 25 °C,
where VDD is 7 V, IDD is 150 mA, and VGG is
–
0.4 V.
Table 2 Specified Electrical Performance
Parameter
Frequency Range
Min
Typ
Max
Units
Operational frequency range
Gain
DC-6 GHz
17
16
15
18
dB
6 GHz-12 GHz
12 GHz-20 GHz
4 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
17.5
17
dB
dB
Gain flatness
± 0.5
± 0.5
2.7
2
dB
dB
Noise figure @5V 150mA
dB
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
dB
2.5
15
dB
Input return loss
Output return loss
P1dB
dB
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
18
dB
13
dB
13
dB
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
18
dB
16
dB
21
dBm
dBm
dBm
dBm
dBm
dBm
dBm
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
21
17
22
19
Psat
24
6 GHz-12 GHz
12 GHz-20 GHz
DC-6 GHz
24
21
OIP3
35
6 GHz-12 GHz
12 GHz-20 GHz
36
dBm
dBm
34
V
DD
(drain voltage supply)
I
DD
(drain current)
7
V
150
-0.4
mA
V
V
GG
(gate voltage supply)
-1.0
0
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MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
3.3
Typical Performance Curves
The following graphs show the typical performance curves of the MMA041PP5 device at 25 °C, unless
otherwise indicated.
Figure 2
Gain vs. Temperature (V
DD
= 7V, I
DD
= 150mA)
Figure 4 Gain vs I
DD
(V
DD
= 7V, T = 25
°
C)
S21 vs Temperature
Gain vs Drain Current
24
22
22
20
18
16
14
12
10
8
6
4
2
0
20
18
16
14
12
10
8
6
4
2
0
-55C
25C
85C
100mA
150mA
180mA
0
5
10 15 20 25 30 35 40
Frequency (GHz)
0
5
10 15 20 25 30 35 40
Frequency (GHz)
Figure 3
Gain vs V
DD
(I
DD
= 150mA, T = 25
°
C)
Figure 5 S
11
vs Temperature (V
DD
= 7V, I
DD
= 150mA)
S11 vs Temperature
0
Gain vs Drain Voltage
22
20
18
16
14
12
10
-5
-10
-15
-20
8
5V
7V
8V
-55C
25C
85C
-25
-30
-35
6
4
2
0
0
5
10 15 20 25 30 35 40
Frequency (GHz)
0
5
10 15 20 25 30 35 40
Frequency (GHz)
10
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
Figure 6 S
22
vs Temperature (V
DD
= 7V, I
DD
= 150mA)
Figure 9 Noise Figure vs Drain Current (V
DD
= 7V, T = 25
°
C)
S22 vs Temperature
Noise Figure vs Drain Current
0
10
-5
-10
-15
-20
100mA
8
150mA
180mA
6
4
2
0
-55C
25C
85C
-25
-30
-35
0
5
10 15 20 25 30 35 40
Frequency (GHz)
2
4
6
8
10 12 14 16 18 20 22 24 26
Frequency (GHz)
Figure 7 Noise Figure vs. Temperature (V
DD
= 7V, I
DD
= 150mA)
Figure 10 P1dB vs V
DD
(I
DD
= 150mA, T = 25
°
C)
Noise Figure vs Temperature
P1dB vs Drain Voltage
10
27
25
23
21
19
17
15
13
11
9
7
-55C
25C
85C
8
6
4
2
0
5V
7V
8V
5
2
4
6
8
10 12 14 16 18 20 22 24 26
Frequency (GHz)
0
2
4
6
8 10
12 14 16 18 20 22 24 26
Frequency (GHz)
Figure 8 NF vs Drain Voltage (I
DD
= 150mA, T = 25
°
C)
Figure 11 P1dB vs. Temperature (V
DD
= 7V, I
DD
= 150mA)
Noise Figure vs Drain Voltage
P1dB vs Temperature
10
27
25
23
21
19
17
15
13
11
9
7
5V
7V
8V
8
6
4
2
0
-55C
25C
85C
5
2
4
6
8
10 12 14 16 18 20 22 24 26
Frequency (GHz)
0
2
4
6
8 10
12 14 16 18 20 22 24 26
Frequency (GHz)
11
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
Figure 12 P3dB vs V
DD
(I
DD
= 150mA, T = 25
°
C)
Figure 15 OIP3 vs V
DD
(I
DD
= 150mA, T = 25
°
C, Pout = 5dBm)
P3dB vs Drain Voltage
OIP3 vs Drain Voltage
40
38
36
34
32
30
28
26
24
22
20
27
25
23
21
19
17
15
13
11
9
7
5V
7V
8V
5V
7V
8V
5
0
2
4
6
8
10 12 14 16 18 20 22 24 26
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Frequency (GHz)
Frequency (GHz)
Figure 13 P3dB vs. Temperature (V
DD
= 7V, I
DD
= 150mA)
Figure 16
OIP3 vs. Current (V
DD
= 7V, T = 25
°
C, Pout = 5dBm)
OIP3 vs Current
40
P3dB vs Temperature
27
38
36
34
32
30
28
25
23
21
19
17
15
13
26
24
22
20
100mA
150mA
180mA
-55C
11
25C
9
85C
7
5
0
2
4
6
8 10
12 14 16 18 20 22 24 26
Frequency (GHz)
0
2
4
6
8 10
12 14 16 18 20 22 24 26
Frequency (GHz)
Figure 14
OIP3 vs. Temp (V
DD
= 7V, I
DD
= 150mA, Pout = 5dBm)
OIP3 vs Temperature
40
38
36
34
32
30
28
-55C
25C
85C
26
24
22
20
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Frequency (GHz)
12
4 Package
Specification
This section details the package specifications of the MMA041PP5 device.
4.1
Package Outline Drawing
The following illustration shows the package outline of the MMA041PP5 device. Dimensions are in
millimeters [inches].
Figure 15 Outline Package
4.2
Packaging Information
The following table shows the chip outline of the MMA041PP5 device. For additional packaging
information, contact your Microsemi sales representative.
Table 3 Packaging Information
Part Number
Package Body Material
Lead Finish
MMA041PP5
Low-stress injection molded plastic
Ni/Pd/Au
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
4.3
Pin Descriptions
The following table describes the pins of the MMA041PP5 device.
Table 4 Pin Description
Pin Number
Pin Name
V
G2
Description
DC couple to V
DA
externally for nominal operation.
2
5
This pin is matched to 50
Ω.
(Optional V
G1
can be biased on this
line.)
RF
IN
First gate bias.
Adjust to achieve required I
DD
.
13
V
G1
Low-frequency termination. Connect bypass capacitors per
application circuit below. (no bias necessary)
15, 16
V
G1A
, V
G1B
RF
OUT
+V
DD
V
DB,
V
DA
This pin is
matched to 50 Ω
and is used to bias VDD.
21
Low-frequency termination. Connect bypass capacitors per
application circuit below. (no bias necessary)
29, 30
Ground paddle must be connected to RF/DC ground.
4, 6, 20, 22
GND
RF/DC ground.
Backside Paddle
RF/DC GND
N/C
1, 3, 7, 8, 9, 10, 11,
12, 14, 17, 18, 19, 23,
24,
These pins are not connected internally. All data was measured
with these pins connected to RF/DC ground externally.
25, 26, 27, 28, 31, 32
Figure 17 Functional Block Diagram
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MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
4.4
Application Circuit
The following illustration shows the application circuit of the MMA041PP5 device.
Figure 18 Application Circuit
15
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
5 Handling
Recommendations
Gallium arsenide integrated circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. It is recommended to follow all procedures and guidelines outlined in
16
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
6 Evaluation
Board Information
The following image shows the evaluation board of the MMA041PP5 device.
Figure 19 Evaluation Board
Table 5 Bias Sequence
Bias Sequence
1) Set
the gate voltage VG1 to -1V
2) Set
drain voltage VDD to 7V
3) Adjust
the gate voltage until the drain current is 150mA
The following table shows the list of materials for the evaluation PCB MMA041PP5E.
Table 6 List of Materials for Evaluation PCB MMA041PP5e
Description
Item
C1, C3, C6, C7
C2, C5, C8
C4
CAP 10 nF 50 V
–
20% to +80% 0402
2.2 μF 1
6 V ceramic capacitor X5R 0603
CAP 100 pF 50 V ±10% 0402
J1, J4
Header, 2-pin, dual row
J2, J3, J5, J6
CONN 2.9 mm female PCB edge mount .012 pin
17
MMA041PP45 DC–25 GHz GaAs MMIC Distributed Low-Noise Amplifier
7 Ordering
Information
Table 7 Ordering Information
Part Number
MMA041PP5
MMA041PP5E
MMA041PP5TR
Description
Minimum Quantity
32 Lead SMT
Evaluation Board
Tape and Reel
1
1
500
18
