Microchip-Tech-MMA043PP4
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MMA043PP4
Datasheet
0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise
Amplifier
Released
May 2017
0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
Contents
Microsemi Proprietary and Confidential. Document Number: MSCC-0341-DS-00103-1.00-0517 Revision: 1.0
0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are
listed by revision, starting with the most current publication.
1.1
Revision 1.0
Revision 1.0 was published in May 2017. It was the first publication of this document.
Microsemi Proprietary and Confidential. Document Number: MSCC-0341-DS-00103-1.00-0517 Revision: 1.0
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
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Product Overview
The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT)
low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between
0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm
output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB
output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject
mixers. The RF ports are internally matched to 50 Ω. This product is also available in die format as the
MMA043AA.
The following image shows the primary functional diagram of the MMA043PP4 device.
Figure 1 • MMA043PP4 Functional Block Diagram
2.1
2.2
Applications
The MMA043PP4 device is designed for the following applications:
Test instrumentation
Wideband communications
Military and space systems
Wireless infrastructure
Wideband microwave radios
Key Features
The following are key features of the MMA043PP4 device:
GaAs pHEMT LNA monolithic microwave integrated circuit (MMIC)
Low-noise figure: 1.5 dB from 0.5 GHz to 6 GHz
High gain: 16 dB
Broadband performance: 0.5 GHz–12 GHz
Excellent P1dB output power: 17 dBm
High OIP3: 28 dBm
50 Ω matched input/output
Compact 24-lead 4 mm × 4 mm × 1.2 mm QFN package: 16 mm
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
3
Electrical Specifications
This section details the electrical specifications of the MMA043PP4 device.
3.1
Absolute Maximum Ratings
The following table lists the absolute maximum ratings of the MMA043PP4 device.
Table 1 • Absolute Maximum Ratings
Parameter
Rating
Storage temperature
Operating temperature
Drain bias voltage (V
DD
)
Gate bias voltage (V
G1
)
Channel temperature
ESD sensitivity (HBM)
Thermal impedance
–65 °C to 150 °C
–40 °C to 85 °C
6.5 V
–2.0 V to 0 V
150 °C
TBD
TBD
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
3.2
Specified Electrical Performance
The following table lists the specified electrical performance of the MMA043PP4 device at 25 °C, where
V
DD
is 5 +V, V
G2
= +1.7 V, I
DD
= 55 mA (set by V
G1
).
Table 2 • Specified Electrical Performance
Parameter
Frequency Range
Min
0.5
14
Typ
Max
12
Units
GHz
dB
Operational frequency range
Gain
0.5 GHz–12 GHz
0.5 GHz–12 GHz
0.5 GHz–7 GHz
7 GHz–10 GHz
10 GHz–12 GHz
0.5 GHz–5 GHz
5 GHz–12 GHz
0.5 GHz–12 GHz
0.5 GHz–10 GHz
10 GHz–12 GHz
0.5 GHz–10 GHz
10 GHz–12 GHz
0.5 GHz–12 GHz
16
Gain flatness
±1.3
1.5
1.8
2.5
–10
–7
dB
Noise figure
2.0
2.2
2.7
dB
Noise figure
dB
Noise figure
dB
Input return loss
Input return loss
Output return loss
P1dB
dB
dB
–10
17
dB
dBm
dBm
dBm
dBm
dBm
V
P1dB
16
Psat (3 dB compression point)
Psat (3 dB compression point)
OIP3
18
17
28
V
G2
(gate 2 bias voltage)
V
G1
(gate 1 bias voltage) to set I
DD
V
DD
(drain voltage supply)
I
DD
(drain current)
1.7
–0.3
5
–0.5
0
V
V
55
mA
3.3
Typical Performance Curves
The following graphs show the typical performance curves of the MMA043PP4 device where V
DD
is 5 V
and I
DD
is 55 mA, unless otherwise indicated. V
G2
= 1.7 V and V
G1
= –0.3 V.
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
Figure 2 • Forward Gain vs. Temperature
Figure 3 • Noise Figure vs. Temperature
Figure 5 • Output Return Loss vs. Temperature
Figure 7 • P1dB and P3dB vs. Temperature
Figure 4 • Input Return Loss vs. Temperature
Figure 6 • Output IP3 vs. Temperature
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
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Package Specification
This section details the package specifications of the MMA043PP4 device.
4.1
Package Outline Drawing
The following illustration shows the package outline of the MMA043PP4 device. Dimensions are shown
in millimeters [inches].
Figure 8 • Package Outline
4.2
Package Information
The following table lists the chip outline of the MMA043PP4 device. Contact your Microsemi sales
representative for additional packaging information.
Table 3 • Package Information
Part Number
Package Body Material
Lead Finish
MSL
Package Marking
Rating
MMA043PP4
Low-stress injection molded plastic
100% matte Sn
TBD
MMA
043P
wwyy
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
4.3
Pin Descriptions
The following table provides pin description information for the MMA043PP4 device.
Table 4 • Pin Description Information
Pin Number
Pin
Description
Name
4, 5, 11, 14, 15,
20, 21, 22, 23
N/C
These pins are not connected internally. May be connected to external RF/DC ground on
PCB.
1, 2, 6, 7, 12, 13,
17, 18, 19, 24
GND
RFIN
VG2
VG1
GND pins and package bottom must be connected to external RF/DC ground on PCB.
3
8
9
This pin is DC-coupled and matched to 50 Ω. External >300 pF DC blocking capacitor is
required.
Positive Gate 2 control for the amplifier. Please follow the MMIC Amplifier Biasing
Procedure application note. See assembly for required external components.
Negative Gate 1 control for the amplifier. Please follow the MMIC Amplifier Biasing
Procedure application note. See assembly for required external components.
10
16
VDD
Power supply voltage for the amplifier. See assembly for required external components.
This pin is AC-coupled and matched to 50 Ω.
RFOUT
4.4
Bias Sequence Procedure
The following lists show the bias sequence procedures for the MMA043PP4 device.
Turn on
:
1. Set
V
G1
(–ve) to –1 V.
2. Set
V
DD
to 5 V.
3. Set
V
G2
to 1.7 V.
4. Increase
V
G1
to achieve Idq of 55 mA.
5. Apply
RF input.
Turn off
:
1. Turn
off RF input.
2. Reduce
V
G1
to –1 V to achieve Idq of 0 mA.
3. Decrease
V
G2
to 0 V.
4. Decrease
V
DD
to 0 V.
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
4.5
Application Circuit
The following illustration shows the application circuit of the MMA043PP4 device.
Figure 9 • Application Circuit
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
5
Handling Recommendations
Gallium arsenide integrated circuits are sensitive to electrostatic discharge (ESD) and can be damaged by
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
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Evaluation Board Information
The following illustration shows the evaluation board of the MMA043PP4 device.
Figure 10 • Evaluation Board
The circuit board used in the application should be generated with proper RF circuit design techniques.
Signal lines at the RF port should have 50 Ω impedance, and the package ground leads and backside
ground paddle should be connected directly to the ground plane similar to the previous image.
Only the components shown in the following table should be assembled.
Table 5 • Materials for Evaluation PCB MMA043PP4E
Item
Description
C1, C4, C7
C2, C5, C8
C3,C6,C9
C16
0603, 100 pF, ±5%, 100 V, AVX, NPO
0603, 10000 pF, ±10%, 100 V, AVX, X7R
1206, 2.2 μF, ±10%, 50 V, AVX, X7R
0402, 330 pF, ±10%, 25 V, AVX, NPO
SRI RF connector 2.9 mm
J1,J2, J6, J7
J3, J4
4-pin DC header Molex
U1
MMA043PP4 QFN 4X4, 24L
MMAB720
PCB
Base plate
749-MM-0198_Rev02 (modified)
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
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Ordering Information
The following table lists the ordering information for the MMA043PP4 device.
Table 6 • Ordering Information
Part Number
MMA043PP4
MMA043PP4E
Package
4 mm × 4 mm plastic QFN package
Evaluation board for MMA043PP4
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0.5 GHz–12 GHz GaAs pHEMT MMIC Wideband Low-Noise Amplifier
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