Microchip-Tech-MMA053AA
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MMA053AA
Datasheet
DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power
Amplifier
Released
May 2017
DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
Contents
Microsemi Proprietary and Confidential. Document Number: MSCC-0341-DS-00107-1.00-0517 Revision: 1.0
DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are
listed by revision, starting with the most current publication.
1.1
Revision 1.0
Revision 1.0 was published in May 2017. It was the first publication of this document.
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
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Product Overview
MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT
distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of
gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410
mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB,
making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA
amplifier features compact die size and I/Os that are internally matched to 50 Ω, facilitating easy
integration into multi-chip modules (MCMs).
The following figure is a functional block diagram for the MMA053AA device.
Figure 1 • Functional Block Diagram
2.1
2.2
Applications
The MMA053AA device is designed for the following applications:
Test instrumentation
Telecom infrastructure
Microwave radio and VSAT
Microwave communications
Key Features
The following are key features of the MMA053AA device:
Frequency range: DC to 8 GHz
High P3dB output power: 31 dBm
Gain: 17 dB
High OIP3: 43 dBm
Bias V
DD
= 11 V/ 410 mA, V
G
= –0.7 V
50 Ω matched I/O
Compact die size: 3 mm × 2.25 mm × 0.07 mm
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
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Electrical Specifications
This section details the electrical specifications of the MMA053AA device.
3.1
Absolute Maximum Ratings
This following table shows the absolute maximum ratings of the MMA053AA device.
Table 1 • Absolute Maximum Ratings
Parameter
Rating
–65 °C to 150 °C
–55 °C to 85 °C
+12 V
Storage temperature
Operating temperature
Drain bias voltage, (V
D
)
Gate bias voltages, (V
G1
)
Gate bias voltages, (V
G2
)
RF input power (7 dB compression)
DC power dissipation (T = 85 °C)
Channel temperature
Thermal impedance
0 V
+4 V
TBD
5.6 W
175 °C
TBD
ESD sensitivity (HBM)
TBD
3.2
Specified Electrical Performance
The following table shows the specified electrical performance of the MMA053AA device at
25 °C, where V
DD
is 11 V and I
DD
is 410 mA. V
G1
= –0.7 V and V
G2
is not used.
Table 2 • Specified Electrical Performance
Parameter
Frequency Range
Min
DC
Typ
Max
8
Units
GHz
dB
Operational frequency range
Gain
DC–8 GHz
DC–8 GHz
2 GHz–8 GHz
DC–8 GHz
DC–8 GHz
DC–8 GHz
DC–8 GHz
DC–8 GHz
17
Gain flatness
±0.5
3
dB
Noise figure
dB
Input return loss
Output return loss
P1dB
–17
–15
29
dB
dBm
dBm
dBm
dBm
V
Psat
31
OIP3
43
V
DD
(drain voltage supply)
I
DD
(drain current)
V
G1
(gate voltage supply)
11
410
0.7
mA
V
3.3
Typical Performance Curves
The following graphs show the typical electrical performance curves of the MMA053AA device at 25 °C,
where V
DD
is 11 V and there is an on-chip V
G2
bias.
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
Figure 2 • Gain and Return Loss vs. Frequency
Figure 3 • Gain vs. Temperature
Figure 4 • Input Return Loss vs. Frequency
Figure 5 • Input Return Loss vs. Temperature
Figure 6 • Noise Figure vs. Frequency
Figure 7 • Noise Figure vs. Temperature
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
Figure 8 • Output Return Loss vs. Frequency
Figure 9 • Output Return Loss vs. Temperature
Figure 10 • Isolation vs. Frequency
Figure 11 • Isolation vs. Temperature
Figure 12 • OIP3 vs. Frequency
Figure 13 • OIP3 vs. Temperature
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
Figure 14 • P1dB vs. Frequency
Figure 15 • P3dB vs. Frequency
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
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Chip Outline Specification
This section details the chip outline specifications of the MMA053AA device.
4.1
Chip Outline Drawing
The following illustration shows the package outline of the MMA053AA device. Dimensions are in
millimeters [inches].
Figure 16 • Chip Outline Drawing
4.2
Die Packaging Information
The following table lists the die package information of the MMA053AA device. Contact your Microsemi
sales representative for additional packaging information
Standard Format
Waffle pack
Optimal Format
Gel pack
50–100 pieces per pack
50 pieces per pack
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
4.3
Bond Pad Information
The following table lists the bond pad information of the MMA053AA device.
Table 3 • Bond Pad Information
Bond
Pad
Bond Pad Name
Description
Number
1
RFIN
VG2
This pad is AC/DC-coupled and matched to 50 Ω. External large DC blocking
capacitor is required to extend performance to very low-frequencies.
2
External positive Gate 2 control (Optional) for amplifier. Please follow “MMIC
Amplifier Biasing Procedure” application note. See application circuit/assembly
for required external components.
3
VG2B
DC output for on-chip VG2 bias network. Must be connected to VG2 if on-chip
VG2 bias network is to be used, otherwise no connection is required.
4
VG2A
DC input for on-chip VG2 bias network. Must be connected to DT1 if on-chip VG2
bias network is to be used, otherwise no connection is required.
5,6
7
DT1, DT2
RFOUT/VDD
GT2, GT1
VG1
Low-frequency drain termination. Attach external bypass capacitors as per
application circuit.
This pad is AC/DC-coupled and matched to 50 Ω. External V
DD
bias network is
required to provide I
DD
as per the application circuit
8,9
10
Low-frequency gate termination. Attach external bypass capacitors as per
application circuit.
Negative Gate 1 control for amplifier. Please follow “MMIC Amplifier Biasing
Procedure” application note. See application circuit/assembly for required
external components.
Die
RF/DC ground
Die bottom must be connected to external RF/DC ground on carrier.
Bottom
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
4.4
Assembly Diagram
The following illustration shows the assembly diagram of the MMA053AA device. The carrier plate is
gold plated. It is necessary to attach components using conductive epoxy. The bypass chip caps are
ceramic and must be assembled within 10 mils of the die. Use 1 mil Au bond wires.
Figure 17 • Assembly Diagram RF Probing With On-Chip VG2 Bias Configuration
Notes:
1. Attach
components on carrier plate using conductive epoxy.
2. VG2A
connected to DT1 and VG2B connected to VG2 for on-chip VG2 bias. Disconnect to apply
external VG2 bias.
3. Use
1 mil Au bond wires.
4. C1,
C2, C3, C4: Presidio VB series dual cap P/N: MVB4040X104MEK5C1B
C5, C6, C7: 4.7 μF on PCB insert.
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
4.5
Applications Information
The following illustration shows applications information for the MMA053AA device
Figure 18 • Application Circuit Schematic
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
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Handling and Die Attachment Recommendations
Gallium arsenide integrated circuits are sensitive to electrostatic discharge (ESD) and can be damaged by
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
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Ordering Information
The following table lists the ordering information for the MMA053AA device.
Table 4 • Ordering Information
Part Number
MMA053AA
Package
Die in waffle or GEL pack
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DC–8 GHz 1 W GaAs MMIC pHEMT Distributed Power Amplifier
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