Microchip-Tech-MSC017SMA120J

MSC017SMA120B Silicon Carbide N-Channel Power MOSFET  

Product Overview  

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon  

MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.  

The MSC017SMA120B device is a 1200 V, 17 mΩ SiC MOSFET in a TO-247 package.  

Features  

The following are key features of the MSC017SMA120B device:  

Low capacitances and low gate charge  

Fast switching speed due to low internal gate resistance (ESR)  

Stable operation at high junction temperature, T

J(max)

= 175 °C  

Fast and reliable body diode  

Superior avalanche ruggedness  

RoHS compliant  

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Benefits  

The following are benefits of the MSC017SMA120B device:  

High efficiency to enable lighter, more compact system  

Simple to drive and easy to parallel  

Improved thermal capabilities and lower switching losses  

Eliminates the need for external freewheeling diode  

Lower system cost of ownership  

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Applications  

The MSC017SMA120B device is designed for the following applications:  

PV inverter, converter, and industrial motor drives  

Smart grid transmission and distribution  

Induction heating and welding  

H/EV powertrain and EV charger  

Power supply and distribution  

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050-7778 MSC017SMA120B Datasheet Revision B  

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Device Specifications  

Device Specifications  

This section shows the specifications of the MSC017SMA120B device.  

Absolute Maximum Ratings  

The following table shows the absolute maximum ratings of the MSC017SMA120B device.  

Table 1 • Absolute Maximum Ratings  

Symbol  

V

DSS  

I

D  

Parameter  

Ratings  

1200  

113  

Unit  

V

Drain source voltage  

Continuous drain current at T

C

= 25 °C  

Continuous drain current at T

C

= 100 °C  

Pulsed drain current

1  

A

80  

I

DM  

V

GS  

P

D  

280  

Gate-source voltage  

23 to –10  

455  

V

Total power dissipation at T

C

= 25 °C  

Linear derating factor  

W

3.33  

W/°C  

Note:  

Repetitive rating: pulse width and case temperature limited by maximum junction temperature.  

1.  

The following table shows the thermal and mechanical characteristics of the MSC017SMA120B device.  

Table 2 • Thermal and Mechanical Characteristics  

Symbol  

R

θJC  

T

J  

Characteristic  

Min  

Typ  

Max  

0.33  

175  

150  

300  

10  

Unit  

°C/W  

°C  

Junction-to-case thermal resistance  

Operating junction temperature  

Storage temperature  

0.22  

–55  

–55  

T

STG  

T

L  

Soldering temperature for 10 seconds (1.6 mm from case)  

Mounting torque, 6-32 or M3 screw  

lbf-in  

N-m  

oz  

1.1  

Wt  

Package weight  

0.22  

6.2  

g

050-7778 MSC017SMA120B Datasheet Revision B  

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Device Specifications  

Electrical Performance  

The following table shows the static characteristics of the MSC017SMA120B device. T

J

= 25 °C unless  

otherwise specified.  

Table 3 • Static Characteristics  

Symbol  

V

(BR)DSS  

R

DS(on)  

Characteristic  

Test Conditions  

Min  

Typ  

Max  

Unit  

V

Drain-source breakdown voltage  

Drain-source on resistance

1  

Gate-source threshold voltage  

Threshold voltage coefficient  

Zero gate voltage drain current  

V

GS

= 0 V, I

D

= 100 µA  

V

GS

= 20 V, I

D

= 40 A  

V

GS

= V

DS,

I

D

= 4.5 mA  

V

GS

= V

DS

, I

D

= 4.5 mA  

V

DS

, = 1200 V, V

GS

= 0 V  

1200  

17.6  

2.7  

22  

mΩ  

V

V

GS(th)  

1.9  

ΔV

GS(th)

/ΔT

J  

I

DSS  

–4.6  

mV/°C  

µA  

100  

500  

V

DS

= 1200 V, V

GS

= 0 V  

T

J

= 125 °C  

I

GSS  

Gate-source leakage current  

V

GS

= 20 V/–10 V  

±100  

nA  

Note:  

Pulse test: pulse width < 380 µs, duty cycle < 2%.  

1.  

050-7778 MSC017SMA120B Datasheet Revision B  

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Device Specifications  

The following table shows the dynamic characteristics of the MSC017SMA120B device. T

J

= 25 °C unless  

otherwise specified.  

Table 4 • Dynamic Characteristics  

Symbol  

Characteristic  

Test Conditions  

Min  

Typ  

5280  

12  

Max  

Unit  

C

iss  

Input capacitance  

V

GS

= 0 V, V

DD

= 1000 V  

V

AC

= 25 mV, ƒ = 1 MHz  

pF  

C

rss  

Reverse transfer capaci-  

tance  

C

oss  

Q

g  

Output capacitance  

Total gate charge  

265  

249  

63  

V

GS

= –5 V/20 V, V

DD

= 800 V  

I

D

= 40 A  

nC  

ns  

Q

gs  

Q

gd  

t

d(on)  

t

f  

Gate-source charge  

Gate-drain charge  

32  

Turn-on delay time  

Voltage fall time  

V

DD

= 800 V, V

GS

= –5 V/20 V,  

I

D

= 50 A, R

g(ext)

= 4.0 Ω,  

Freewheeling diode =  

52  

21  

MSC017SMA120B (V

GS

= –5 V)  

t

d(off)  

t

r  

Turn-off delay time  

Voltage rise time  

49  

16  

E

on  

E

off  

t

d(on)  

t

f  

Turn-on switching energy  

Turn-off switching energy  

Turn-on delay time  

Voltage fall time  

1677  

395  

49  

µJ  

ns  

V

DD

= 800 V, V

GS

= –5 V/20 V,  

I

D

= 50 A, R

g(ext)

= 4.0 Ω  

Freewheeling diode =  

MSC050SDA120B  

19  

t

d(off)  

t

r  

Turn-off delay time  

Voltage rise time  

49  

14  

E

on  

E

off  

ESR  

Turn-on switching energy  

Turn-off switching energy  

1329  

429  

0.71  

µJ  

Equivalent series resis-  

tance  

f = 1 MHz, 25 mV, drain short  

V

DS

= 960 V, V

GS

= 20 V  

V

DS

= 150 V, I

D

= 30 A  

Ω

SCWT  

E

AS  

Short circuit withstand  

time  

3

µs  

mJ  

Avalanche energy, single  

pulse  

3500  

050-7778 MSC017SMA120B Datasheet Revision B  

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Device Specifications  

The following table shows the body diode characteristics of the MSC017SMA120B device. T

J

= 25 °C unless  

otherwise specified.  

Table 5 • Body Diode Characteristics  

Symbol  

Characteristic  

Test Conditions  

Min  

Typ  

3.5  

3.9  

40  

Max  

Unit  

V

V

SD  

Diode forward voltage  

I

SD

= 40 A, V

GS

= 0 V  

I

SD

= 40 A, V

GS

= –5 V  

V

t

rr  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

I

SD

= 50 A, V

GS

= –5 V,  

Drive Rg = 4 Ω  

ns  

nC  

A

Q

rr  

I

RRM  

490  

22  

V

DD

= 800 V, dl/dt = –2500 A/µs  

Typical Performance Curves  

This section shows the typical performance curves of the MSC017SMA120B device.  

Figure 2 • Drain Current vs. V

DS  

Figure 1 • Drain Current vs. V

DS  

050-7778 MSC017SMA120B Datasheet Revision B  

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Device Specifications  

Figure 4 • Drain Current vs. V

DS  

Figure 3 • Drain Current vs. V

DS  

Figure 5 • RDS(on) vs. Junction Temperature  

Figure 6 • Gate Charge Characteristics  

Figure 8 • I

D

vs. V

DS

3

rd

Quadrant Conduction  

Figure 7 • Capacitance vs. Drain-to-Source Voltage  

050-7778 MSC017SMA120B Datasheet Revision B  

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Device Specifications  

Figure 9 • I

D

vs. V

DS

3

rd

Quadrant Conduction  

Figure 10 • Switching Energy Eon vs. V

DS

& I

D  

Figure 11 • Switching Energy Eoff vs. V

DS

& I

D  

Figure 12 • Switching Energy vs. R

g  

Figure 13 • Switching Energy vs. Temperature  

Figure 14 • Switching Energy Eon vs. V

DS

& I

D  

050-7778 MSC017SMA120B Datasheet Revision B  

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Device Specifications  

Figure 16 • Switching Energy vs. R

g  

Figure 15 • Switching Energy Eoff vs. V

DS

& I

D  

Figure 17 • Threshold Voltage vs. Junction Temp.  

Figure 18 • Forward Safe Operating Area  

Figure 19 • Maximum Transient Thermal Impedance  

050-7778 MSC017SMA120B Datasheet Revision B  

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Package Specification  

Package Specification  

This section shows the package specification of the MSC017SMA120B device.  

Package Outline Drawing  

The following figure illustrates the TO-247 package outline of the MSC017SMA120B device.  

Figure 20 • Package Outline Drawing  

The following table shows the TO-247 dimensions and should be used in conjunction with the package  

outline drawing.  

Table 6 • TO-247 Dimensions  

Symbol  

Min (mm)  

Max (mm)  

5.31  

Min (in.)  

0.185  

0.059  

0.087  

0.016  

0.212  

0.138  

Max (in.)  

0.209  

0.098  

0.102  

0.031  

0.244  

0.150  

A

B

C

D

E

F

4.69  

1.49  

2.49  

2.21  

2.59  

0.40  

0.79  

5.38  

6.20  

3.50  

3.81  

050-7778 MSC017SMA120B Datasheet Revision B  

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Package Specification  

Symbol  

Min (mm)  

6.15 BSC  

20.80  

19.81  

4.00  

Max (mm)  

Min (in.)  

0.242 BSC  

0.819  

Max (in.)  

G

H

I

21.46  

20.32  

4.50  

0.845  

0.800  

0.177  

0.055  

0.123  

0.084  

0.640  

0.571  

0.689  

0.780  

J

0.157  

K

L

1.01  

1.40  

0.040  

2.87  

3.12  

0.113  

M

N

O

P

Q

R

S

1.65  

2.13  

0.065  

15.49  

13.50  

16.50  

5.45 BSC  

2.00  

16.26  

14.50  

17.50  

0.610  

0.531  

0.650  

0.215 BSC  

0.079  

2.75  

7.50  

0.108  

0.295  

7.10  

0.280  

Terminal 1  

Gate  

Terminal 2  

Terminal 3  

Terminal 4  

Drain  

Source  

Drain  

050-7778 MSC017SMA120B Datasheet Revision B  

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050-7778 | November 2020 | Preliminary  

050-7778 MSC017SMA120B Datasheet Revision B  

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