Microchip-Tech-MSC180SMA120B
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MSC180SMA120B
Silicon Carbide N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon
MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The
MSC180SMA120B device is a 1200
V
,
1
80 mΩ SiC MOSFET in a TO-247 package.
Features
The following are key features of the MSC180SMA120B device:
•
•
•
•
•
•
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, T
J(max)
= 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
Benefits
The following are benefits of the MSC180SMA120B device:
•
•
•
•
•
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need for external freewheeling diode
Lower system cost of ownership
Applications
The MSC180SMA120B device is designed for the following applications:
•
•
•
•
•
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution
DS-00003858A-page 1
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Device Specifications
1.
Device Specifications
This section shows the specifications of the MSC180SMA120B device.
1.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC180SMA120B device.
Table 1-1.ꢀAbsolute Maximum Ratings
Symbol
V
DSS
I
D
Parameter
Ratings
1200
21
Unit
V
Drain source voltage
Continuous drain current at T
C
= 25 °C
Continuous drain current at T
C
= 100 °C
Pulsed drain current
1
A
15
I
DM
V
GS
P
D
40
Gate-source voltage
23 to –10
127
V
T
o
tal power dissipation at T
C
= 25 °C
Linear derating factor
W
1.18
W/°C
Note:ꢀ
1. Repetitive
rating: pulse width and case temperature limited by maximum junction temperature.
The following table shows the thermal and mechanical characteristics of the MSC180SMA120B device.
Table 1-2.ꢀThermal and Mechanical Characteristics
Symbol
R
θJC
T
J
Characteristic/Test Conditions
Junction-to-case thermal resistance
Operating junction temperature
Storage temperature
Min
Typ
Max
1.18
175
150
300
Unit
°C/W
°C
0.79
–55
–55
T
STG
T
L
°C
Soldering temperature for 10 seconds (1.6
mm from case)
°C
Mounting torque, 6-32 or M3 screw
10
lbf-in
N-m
oz
1.1
Wt
Package weight
0.22
6.2
g
1.2
Electrical Performance
The following table shows the static characteristics of the MSC180SMA120B device. T
J
= 25 °C unless otherwise
specified.
Table 1-3.ꢀStatic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
V
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0
V
,
I
D
= 100 μA
1200
R
DS(on)
Drain-source on resistance
1
V
GS
= 20
V
,
I
D
= 8 A
180
225
mΩ
DS-00003858A-page 2
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Device Specifications
………..continued
Symbol Characteristic
Test Conditions
Min
Typ
3.26
–5.8
Max
Unit
V
V
GS(th)
Gate-source threshold voltage
V
GS
= V
DS
, I
D
= 500 µA
V
GS
= V
DS
, I
D
= 500 µA
1.9
ΔV
GS(th)
/
Threshold voltage coefficient
mV/°C
ΔT
J
I
DSS
Zero gate voltage drain current
V
DS
= 1200
V
,
V
GS
= 0 V
100
500
µA
V
DS
= 1200
V
,
V
GS
= 0
V
, T
J
=
125 °C
I
GSS
Gate-source leakage current
V
GS
= 20 V/–10 V
±100 nA
Note:ꢀ
1. Pulse
test: pulse width < 380 μs, duty cycle < 2%.
The following table shows the dynamic characteristics of the MSC180SMA120B device. T
J
= 25 °C unless otherwise
specified.
Table 1-4.ꢀDynamic Characteristics
Symbol
C
iss
Characteristic
Test Conditions
Min
Typ
510
4
Max
Unit
Input capacitance
V
GS
= 0
V
,
V
DD
= 1000
V
,
V
AC
25 m
V
, ƒ = 1
M
Hz
=
pF
C
rss
Reverse transfer
capacitance
C
oss
Q
g
Output capacitance
T
o
tal gate charge
45
34
10
9
V
GS
= –5 V/20
V
,
V
DD
= 800
V
,
I
D
= 40 A
nC
ns
Q
gs
Q
gd
t
d(on)
t
r
Gate-source charge
Gate-drain charge
Turn-on delay time
Voltage rise time
V
DD
= 800
V
,
V
GS
= –5
22
18
17
10
210
23
20
15
17
9
V/20
V
,
I
D
= 10 A, R
g(ext)
=
8.0 Ω, Freewheeling diode =
MSC180SMA120B (V
GS
= –5 V)
t
d(off)
t
f
Turn-off delay time
Voltage fall time
E
on
E
off
t
d(on)
t
r
Turn-on switching energy
Turn-off switching energy
Turn-on delay time
Voltage rise time
µJ
ns
V
DD
= 800
V
,
V
GS
= –5
V/20
V
,
I
D
= 10 A, R
g(ext)
=
8.0 Ω, Freewheeling diode =
MSC010SDA120B
t
d(off)
t
f
Turn-off delay time
Voltage fall time
E
on
E
off
ESR
Turn-on switching energy
Turn-off switching energy
170
23
3.29
µJ
Ω
Equivalent series
resistance
f = 1 MHz, 25 m
V
, drain short
SCWT
E
AS
Short circuit withstand time
V
DS
= 960
V
,
V
GS
= 20 V
µs
Avalanche energy, single
pulse
V
DS
= 150
V
,
I
D
= 30 A
mJ
DS-00003858A-page 3
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Device Specifications
The following table shows the body diode characteristics of the MSC180SMA120B device. T
J
= 25 °C unless
otherwise specified.
Table 1-5.ꢀBody Diode Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
3.81
3.96
28
Max
Unit
V
SD
Diode forward voltage
I
SD
= –8 A, V
GS
= 0 V
I
SD
= –8 A, V
GS
= –5 V
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 10 A, V
GS
= –5 V, Drive
Rg = 8 Ω, V
DD
= 800
V
,
d
l/dt =
–1120 A/μs
ns
nC
A
Q
rr
I
RRM
88
4.2
1.3
Typical Performance Curves
This section shows the typical performance curves of the MSC180SMA120B device.
Figure 1-1.ꢀDrain Current vs. V
DS
Figure 1-2.ꢀDrain Current vs. V
DS
DS-00003858A-page 4
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Device Specifications
Figure 1-3.ꢀDrain Current vs. V
DS
Figure 1-4.ꢀDrain Current vs. V
DS
Figure 1-5.ꢀR
DS(on)
vs. Junction Temperature
Figure 1-6.ꢀGate Charge Characteristics
DS-00003858A-page 5
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Device Specifications
Figure 1-7.ꢀCapacitance vs. Drain-to-Source
Voltage
Figure 1-8.ꢀI
D
vs. V
DS
3
rd
Quadrant Conduction
Figure 1-9.ꢀI
D
vs. V
DS
3
rd
Quadrant Conduction
Figure 1-10.ꢀSwitching Energy Eon vs. V
DS
& I
D
DS-00003858A-page 6
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Device Specifications
Figure 1-11.ꢀSwitching Energy Eoff vs. V
DS
& I
D
Figure 1-12.ꢀSwitching Energy vs. R
g
Figure 1-13.ꢀSwitching Energy vs. Temperature
Figure 1-14.ꢀSwitching Energy Eon vs. V
DS
& I
D
DS-00003858A-page 7
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Device Specifications
Figure 1-15.ꢀSwitching Energy vs. R
g
Figure 1-16.ꢀThreshold Voltage vs. Junction Temp.
Figure 1-17.ꢀForward Safe Operating Area
DS-00003858A-page 8
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Device Specifications
Figure 1-18.ꢀMaximum Transient Thermal Impedance
The following figure shows the switching waveform diagram of the MSC180SMA120B device.
Figure 1-19.ꢀSwitching Waveform
DS-00003858A-page 9
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Package Specification
2.
Package Specification
This section shows the package specification of the MSC180SMA120B device.
2.1
Package Outline Drawing
The following figure illustrates the TO-247 package outline of the MSC180SMA120B device.
Figure 2-1.ꢀPackage Outline Drawing
The following table shows the TO-247 dimensions and should be used in conjunction with the package outline
drawing.
Table 2-1.ꢀTO-247 Dimensions
Symbol
Min (mm)
4.69
Max (mm)
5.31
Min (in.)
0.185
Max (in.)
0.209
0.098
0.102
0.031
0.244
0.150
A
B
C
D
E
F
G
H
I
1.49
2.49
0.059
2.21
2.59
0.087
0.40
0.79
0.016
5.38
6.20
0.212
3.50
3.81
0.138
6.15 BSC
20.80
19.81
0.242 BSC
0.819
21.46
20.32
0.845
0.800
0.780
DS-00003858A-page 10
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
Package Specification
………..continued
Symbol
Min (mm)
4.00
Max (mm)
4.50
Min (in.)
0.157
Max (in.)
0.177
0.055
0.123
0.084
0.640
0.571
0.689
J
K
1.01
1.40
0.040
L
2.87
3.12
0.113
M
1.65
2.13
0.065
N
15.49
13.50
16.50
5.45 BSC
2.00
16.26
14.50
17.50
0.610
O
0.531
P
0.650
Q
0.215 BSC
0.079
R
2.75
7.50
0.108
0.295
S
7.10
0.280
T
e
rminal 1
T
e
rminal 2
T
e
rminal 3
T
e
rminal 4
Gate
Drain
Source
Drain
DS-00003858A-page 11
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
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DS-00003858A-page 12
Datasheet
©
2021 Microchip
T
e
chnology Inc.
MSC180SMA120B
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Poland – Warsaw
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e
l: 48-22-3325737
Romania – Bucharest
T
e
l: 40-21-407-87-50
Spain – Madrid
Mission Viejo, CA
T
e
l: 949-462-9523
Fax: 949-462-9608
T
e
l: 951-273-7800
Raleigh, NC
T
e
l: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden – Gothenberg
T
e
l: 46-31-704-60-40
Sweden – Stockholm
T
e
l: 46-8-5090-4654
UK – Wokingham
T
e
l: 919-844-7510
New York, NY
T
e
l: 631-435-6000
San Jose, CA
T
e
l: 408-735-9110
T
e
l: 408-436-4270
Canada – Toronto
T
e
l: 905-695-1980
Fax: 905-695-2078
T
e
l: 44-118-921-5800
Fax: 44-118-921-5820
DS-00003858A-page 15
Datasheet
©
2021 Microchip
T
e
chnology Inc.
