Microchip-Tech-MSCM20XM10T3XG
| Part # | Microchip-Tech-MSCM20XM10T3XG |
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MSCM20XM10T3XG
V
DSS
= 200V
R
DSon
= 9.7m
max @ Tj = 25°C
I
D
= 108A @ Tc = 25°C
Three phase leg
MOSFET Power Module
Application
Motor control
Features
–
–
–
–
–
–
MOSFET
Low R
DSon
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 21/22/23 ; 25/26/27/28/29 … …
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
(Per switch)
Symbol
Parameter
Drain – Source Voltage
Max ratings
Unit
V
V
DSS
200
108
83
T
c
= 25°C
T
c
= 80°C
I
D
Continuous Drain Current
A
I
DM
V
GS
R
DSon
P
D
Pulsed Drain current
Gate – Source Voltage
Drain – Source ON Resistance
Power Dissipation
Single Pulse Avalanche Energy
430
±20
9.7
V
m
W
T
c
= 25°C
341
760
E
AS
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1 – 5
MSCM20XM10T3XG
Electrical Characteristics
(Per switch)
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 200V
50
µA
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
V
GS
= 10V ; I
D
= 81A
V
GS
= V
DS
, I
D
= 250µA
V
GS
= ±20 V, V
DS
= 0V
8
9.7
5
±140 nA
m
V
3
I
GSS
Gate – Source Leakage Current
Dynamic Characteristics
(Per switch)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
10.7
0.81
0.16
V
GS
= 0V
V
DS
= 50V
f = 1 MHz
nF
Q
g
Total gate Charge
161
54
V
GS
= 10V
Q
gs
Gate – Source Charge
V
Bus
= 100V
nC
I
D
= 75A
Q
gd
T
d(on)
T
r
Gate – Drain Charge
Turn-on Delay Time
Rise Time
52
41
V
GS
= 10V
V
Bus
= 130V
I
D
= 75A
105
64
ns
T
d(off)
Turn-off Delay Time
R
G
= 2.7
T
f
Fall Time
75
R
thJC
Junction to Case Thermal Resistance
0.44 °C/W
Source – Drain diode ratings and characteristics
(Per switch)
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= 81A
1.3
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
130
155
633
944
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
S
= 75A
V
R
= 100V
di
S
/dt = 100A/µs
Q
rr
nC
Temperature sensor NTC
Symbol
R
25
Characteristic
Min Typ Max
Unit
Resistance @ 25°C
Resistance tolerance
Beta tolerance
22
k
5
3
R
25
/R
25
B/B
%
B
25/100
T
25
= 298.16 K
3980
K
R
25
R
T
T: Thermistor temperature
R
T
: Thermistor value at T
1
1
25 / 100
exp
B
T
25
T
2 – 5
MSCM20XM10T3XG
Thermal and package characteristics
Symbol Characteristic
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
4000
-40
-40
-40
-40
2
Max
Unit
V
T
J
T
JOP
T
STG
T
C
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
175
T
J
max -25
125
°C
Operating Case Temperature
125
3
120
Torque Mounting
torque
Wt Package
Weight
To heatsink
M4
N.m
g
Package outline
(dimensions in mm)
3 – 5
MSCM20XM10T3XG
Typical Performance Curve
Maxi
m
u
m
t
hermal impedan
c
e
0.1
1
2
3
4
5
6
7
Ri (°C/W)
0.014 0.061 0.014 0.223 0.010 0.076 0.042
taui (s)
0.011 0.004 0.016 0.056 0.039 0.015 0.043
0.01
0.001
0.01
0.1
ti
m
e (s)
1
Low Voltage Output Characteristics
Drain Source On state resistance
160
140
120
100
80
3
T
J
=25°C
V
GS
= 10& 15V
V
GS
= 10V
I
D
=75A
2.5
2
60
8V
7V
1.5
1
40
20
0
25
50
75 1
0
0
1
25 150 175
0
0.5
1
1.5
2
2.5
3
T
J
(°C)
V
DS
, D
r
ain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
10
8
100000
10000
1000
100
V
DS
=100V
I
D
=75A
T
J
=25°C
Ci
s
s
6
Co
s
s
4
2
C
r
ss
0
10
0
20 40 60 80
100 120 140 160
0
12.5
25
37.5
50
Gate Charge (nC)
V
DS
, D
r
ain to Source Voltage (V)
4 – 5
MSCM20XM10T3XG
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without any notice.
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new proposed specific part.
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