Microchip-Tech-MSCMC120AM03CT6LIAG
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MSCMC120AM03CT6LIAG
Datasheet
Very Low Stray Inductance Phase Leg SiC MOSFET Power
Module
Final
May 2018
Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
Contents
MSCMC120AM03CT6LIAG Datasheet Revision A
Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are
listed by revision, starting with the most current publication.
1.1
Revision A
Revision A was published in May 2018. It is the first publication of this document.
MSCMC120AM03CT6LIAG Datasheet Revision A
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
2
Product Overview
2.1
Features
The following are key features of the MSCMC120AM03CT6LIAG device:
Very low stray inductance
Internal thermistor for temperature monitoring
M4 and M5 power connectors
M2.5 signals connectors
AlN substrate for improved thermal performance
SiC Power MOSFET
Low R
DS(on)
High temperature performance
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature independent switching behavior
Positive temperature coefficient on VF
2.2
2.3
Benefits
The following are benefits of the MSCMC120AM03CT6LIAG device:
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS compliant
Applications
The MSCMC120AM03CT6LIAG device is designed for the following applications:
Motor control
*All ratings taken at T
J
= 25 °C unless otherwise specified.
*Caution: the devices are sensitive to elctrostatic discharge (ESD). Proper handling procedures should be
followed.
MSCMC120AM03CT6LIAG Datasheet Revision A
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
3
Electrical Specifications
This section details the electrical specifications for the MSCMC120AM03CT6LIAG device.
3.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings for the MSCMC120AM03CT6LIAG device (per
SiC MOSFET).
Table 1 • Absolute Maximum Ratings
Symbol
V
DSS
Parameter
Ratings
1200
631
Unit
V
Drain- source voltage
Continuous drain current
I
D
T
C
= 25 °C
T
C
= 80 °C
A
475
I
DM
Pulsed drain current
1200
–5 to 23
–5 to 18
3.4
V
GS
Gate- source voltage
V
V
GSOP
R
DS(on)
P
D
Gate- source voltage; recommended operation values
Drain- source ON resistance
Power dissipation
mΩ
W
T
C
= 25 °C
2778
MSCMC120AM03CT6LIAG Datasheet Revision A
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
3.2
Electrical Performance
The following tables show the SiC MOSFET characteristics (per SiC MOSFET) of the
MSCMC120AM03CT6LIAG device.
Table 2 • Electrical Characteristics
Symbol
I
DSS
Characteristic
Test Conditions
Min
Typ
200
2.5
5.2
2.6
Max
1000
3.4
Unit
μA
Zero gate voltage drain current
Drain- source on resistance
V
GS
= 0 V, V
Ds
= 1200 V
V
GS
= 20 V; I
D
= 500 A
V
GS
= 18 V; I
D
= 500 A
V
GS
= V
Ds
, I
D
= 150 mA
V
GS
= 20 V, V
Ds
= 0 V
R
DS(on)
T
j
= 25 °C
mΩ
T
j
= 175 °C
V
GS(th)
I
GSS
Gate threshold voltage
2
4
6
V
Gate- source leakage current
μA
Table 3 • Dynamic Characteristics
Symbol
C
iss
Characteristic
Test conditions
V
GS
= 0 V
Min
Typ
Max
Unit
Input capacitance
27.9
2.2
nF
nC
ns
C
oss
Output capacitance
Reverse transfer capacitance
V
DS
= 1000 V
C
rss
0.15
f = 1 MHz
Q
g
Total gate charge
V
GS
= –5 to 20 V
1610
460
Q
gs
Q
gd
Gate – source charge
Gate – drain charge
V
Bus
= 800 V
500
I
D
= 500 A
T
d(on)
T
r
Turn-on delay time
Rise time
V
GS
= –5 to 20 V
21
19
50
30
V
Bus
= 600 V
I
D
= 500 A
T
d(off)
T
f
Turn-off delay time
Fall time
R
L
= 1.2 Ω ; R
G
= 0.3 Ω
Inductive Switching
7.4
4.8
E
on
E
off
Turn on energy
Turn off energy
T
j
= 150 °C
T
j
= 150 °C
mJ
V
GS
= –5 to 20 V
V
Bus
= 600 V
I
D
= 500 A
R
G
= 0.3 Ω
R
Gint
R
thJC
Internal gate resistance
0.71
Ω
Junction-to-case thermal resistance
0.054
°C/W
Table 4 • Body Diode Ratings and Characteristics
Symbol
Characteristic
Test conditions
V
GS
= –5 V
Min
Typ
Max
Unit
T
j
= 25 °C
T
j
= 175 °C
4
V
V
SD
Diode forward voltage
3.5
I
SD
= 250 A
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
45
4
ns
µC
A
I
SD
= 500 A ; V
GS
= –5 V
Q
rr
I
rr
V
R
= 800 V ; di
F
/dt = 10000 A/µs
135
MSCMC120AM03CT6LIAG Datasheet Revision A
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
The following table shows the SiC diode characteristics (per SiC diode) of the MSCMC120AM03CT6LIAG
device.
Table 5 • SiC Diode Charcteristics
Symbol
V
RRM
Characteristics
Test conditions
V
R
= 1200 V
Min
Typ
Max
1200
2.5
5
Unit
V
Peak repetitive reverse voltage
Reverse leakage current
I
RM
T
j
= 25 °C
T
j
= 175 °C
Tc = 100 °C
T
j
= 25 °C
T
j
= 175 °C
0.5
mA
1.5
I
F
DC forward current
250
1.6
A
V
V
F
Diode forward voltage
I
F
= 250 A
V
R
= 800 V
1.8
2.7
2.25
1230
1150
865
Q
C
Total capacitive charge
Total capacitance
nC
pF
C
f = 1 MHz, V
R
= 400 V
f = 1 MHz, V
R
= 800 V
R
thJC
Junction-to-case thermal resistance
0.106
°C/W
The following tables show the thermal and package characteristics of the MSCMC120AM03CT6LIAG
device.
Table 6 • Package Charcteristics
Symbol
V
ISOL
T
J
Characteristic
Min
4000
–40
–40
–40
–40
0.4
2
Max
Unit
V
RMS isolation voltage, any terminal to case t = 1 min, 50 to 60 Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage temperature range
175
°C
T
JOP
T
J
max –25
T
STG
125
125
0.6
3
T
C
Operating case temperature
Torque
Mounting torque
For terminals
M2.5
M4
Nm
M5
2
3.5
5
To heatsink
M6
3
L
DC
Module stray inductance between VBUS and 0/VBUS
Package weight
3
nH
g
Wt
320
Table 7 • Temperature Sensor NTC
Symbol
R
25
Characteristic
Min
Typ
50
5
Max
Unit
Resistance at 25 °C
kΩ
%
K
ΔR
25
/R
25
B
25/85
T
25
= 298.15 K
T
C
= 100 °C
3952
4
ΔB/B
%
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
3.3
Typical Performance Curves
This section shows the typical performance curves for the MSCMC120AM03CT6LIAG device.
The following section details the typical performance curves for SiC MOSFET.
Figure 2 • Maximum Thermal Impedance
Figure 3 • Output Characteristics
Figure 4 • Output Characteristics II
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
Figure 5 • Normalized RDS(on) vs. Temperature
Figure 6 • Transfer Characteristics
Figure 7 • Switching Energy vs. Rg
Figure 8 • Switching Energy vs. Current
Figure 9 • Capacitance vs. Drain Source Voltage
Figure 10 • Gate Charge vs. Gate Source Voltage
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
Figure 11 • Body Diode Characteristics
Figure 12 • 3rd Quadrant Characteristics
Figure 13 • Body Diode Characteristics II
Figure 14 • 3rd Quadrant Characteristics
Figure 15 • Operating Frequency vs. Drain Current
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
The following section details the typical performance curves for SiC Diode.
Figure 16 • SiC Diode Maximum Thermal Impedance
Figure 17 • Forward Characteristics
Figure 18 • Reverse Characteristics
Figure 19 • Capacitance vs. Reverse Voltage
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
4
Package Specification
This section shows the package specification for the MSCMC120AM03CT6LIAG device.
4.1
Package Outline Drawing
This section details the package drawing of the MSCMC120AM03CT6LIAG device. Dimensions are in
millimeters.
Figure 20 • Package Outline Drawing
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Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
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MSCMC120AM03CT6LIAG Datasheet Revision A
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