Microchip-Tech-MSCSM120AM03CT6LIAG

.

MSCSM120AM03CT6LIAG  

Datasheet  

Very Low Stray Inductance Phase Leg SiC  

MOSFET Power Module  

January 2020  

Contents  

Contents  

Revision History……………………………………………………………………………………………………………………1  

1.1 Revision 1.0………………………………………………………………………………………………………………………………………1  

Product Overview…………………………………………………………………………………………………………………2  

2.1 Features…………………………………………………………………………………………………………………………………………..3  

2.2 Benefits……………………………………………………………………………………………………………………………………………3  

2.3 Applications……………………………………………………………………………………………………………………………………..3  

Electrical Specifications…………………………………………………………………………………………………………4  

3.1 SiC MOSFET Characteristics (Per MOSFET)……………………………………………………………………………………………4  

3.2 SiC Diode Characteristics (Per SiC Diode)………………………………………………………………………………………………6  

3.3 Thermal and Package Characteristics…………………………………………………………………………………………………..7  

3.4 SiC MOSFET Performance Curves………………………………………………………………………………………………………..8  

3.5 SiC Diode Performance Curves………………………………………………………………………………………………………….11  

Package Outline………………………………………………………………………………………………………………….12  

4.1 Package Outline Drawing………………………………………………………………………………………………………………….12  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

ii  

Revision History  

1

Revision History  

The revision history describes the changes that were implemented in the document. The changes are listed  

by revision, starting with the most current publication.  

1.1  

Revision 1.0  

Revision 1.0 was published in January 2020. It is the first publication of this document.  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

1

Product Overview  

2

Product Overview  

The MSCSM120AM03CT6LIAG device is a 1200 V, 805 A full Silicon Carbide power module.  

Figure 1 • Electrical Schematic of MSCSM120AM03CT6LIAG Device  

Figure 2 • Pinout Location  

All ratings at Tj = 25 °C, unless otherwise specified.  

Caution:

These devices are sensitive to electrostatic discharge. Proper handling procedures should be  

followed.  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

2

Product Overview  

2.1  

Features  

The following are the features of MSCSM120AM03CT6LIAG device:  

•

SiC power MOSFET  

◦

◦

Low R

DS(on)  

High temperature performance  

•

SiC Schottky diode  

◦

◦

◦

◦

Zero reverse recovery  

Zero forward recovery  

Temperature independent switching behavior  

Positive temperature coefficient on VF  

•

•

•

•

•

Very low stray inductance  

Internal thermistor for temperature monitoring  

M4 and M5 power connectors  

M2.5 signals connectors  

AlN substrate for improved thermal performance  

2.2  

2.3  

Benefits  

The following are the benefits of MSCSM120AM03CT6LIAG device:  

•

•

•

•

•

•

High efficiency converter  

Outstanding performance at high frequency operation  

Direct mounting to heatsink (isolated package)  

Low junction-to-case thermal resistance  

Low profile  

RoHS compliant  

Applications  

The following are the applications of MSCSM120AM03CT6LIAG device:  

•

•

•

•

Welding converters  

Switched mode power supplies  

Uninterruptible power supplies  

EV motor and traction drive  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

3

Electrical Specifications  

3

Electrical Specifications  

This section provides the electrical specifications for the MSCSM120AM03CT6LIAG device.  

3.1  

SiC MOSFET Characteristics (Per MOSFET)  

The following table shows the absolute maximum ratings of MSCSM120AM03CT6LIAG device.  

Table 1 • Absolute Maximum Ratings  

Symbol  

V

DSS  

I

D  

Parameters  

Maximum Ratings  

Unit  

V

Drain–source voltage  

Continuous drain current  

1200  

805

1  

640

1  

1600  

–10/25  

3.1  

T

C

= 25°C  

T

C

= 80°C  

A

I

DM  

V

GS  

R

DSon  

P

D  

Pulsed drain current  

Gate–source voltage  

Drain–source ON resistance  

Power dissipation  

V

mΩ  

W

T

C

= 25°C  

3215  

Note:  

1. Specification of SiC MOSFET device but output current must be limited due to size of  

power connectors.  

The following table shows the electrical characteristics of MSCSM120AM03CT6LIAG device.  

Table 2 • Electrical Characteristics  

Symbol  

I

DSS  

Characteristic

s

 

Test Conditions  

Min  

Typ  

150  

2.5  

4

Max  

1000  

3.1  

Unit  

μA  

Zero gate voltage drain current  

Drain–source on resistance  

V

GS

= 0 V ; V

DS

= 1200 V  

R

DS(on)  

V

GS

= 20 V  

I

D

= 400 A  

T

C

= 25°C  

T

C

= 175°C  

mΩ  

V

GS(th)  

I

GSS  

Gate threshold voltage  

V

GS

= V

DS

, I

D

= 10 mA  

V

GS

= 20 V, V

DS

= 0 V  

1.8  

2.8  

V

Gate–source leakage current  

1

μA  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

4

Electrical Specifications  

The following table shows the dynamic characteristics of MSCSM120AM03CT6LIAG device.  

Table 3 • Dynamic Characteristics  

Symbol  

C

iss  

Characteristics  

Test Conditions  

Min  

Typ  

30.2  

2.7  

Max  

Unit  

Input capacitance  

Output capacitance  

Reverse transfer capacitance  

Total gate charge  

Gate–source charge  

Gate–drain charge  

Turn-on delay time  

Rise time  

V

GS

= 0 V  

nF  

V

DS

= 1000 V  

f = 1 MHz  

C

oss  

C

rss  

Q

g  

0.25  

2320  

410  

500  

56  

V

GS

= –5/20 V  

V

Bus

= 800 V  

I

D

= 400 A  

nC  

ns  

Q

gs  

Q

gd  

T

d(on)  

T

r  

V

GS

= –5/20 V  

T

J

= 150 °C  

55  

V

Bus

= 600 V  

I

D

= 500 A  

T

d(off)  

T

f  

Turn-off delay time  

Fall time  

166  

67  

R

G

= 0.3 Ω  

E

on  

Turn on energy  

Inductive switching  

T

J

= 150 °C  

9.2  

mJ  

E

off  

Turn off energy  

8.3  

V

GS

= –5/20 V  

V

Bus

= 600 V  

I

D

= 500 A  

R

G

= 0.3 Ω  

R

Gint  

R

thJC  

Internal gate resistance  

0.98  

Ω

Junction-to-case thermal resistance  

0.047  

°C/W  

The following table shows the body diode ratings and characteristics of MSCSM120AM03CT6LIAG device.  

Table 4 • Body Diode Ratings and Characteristics  

Symbol  

Characteristic

s

 

Test Conditions  

Min  

Typ  

Max  

Unit  

V

SD  

Diode forward voltage  

V

GS

= 0 V ;  

I

SD

= 400 A  

4

V

V

GS

= –5 V ;  

I

SD

= 400 A  

4.2  

t

rr  

Q

rr  

I

rr  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

I

SD

= 400 A ;  

90  

ns  

μC  

A

V

GS

= –5 V  

5.5  

135  

V

R

= 800 V ;  

di

F

/dt = 10000 A/μs  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

5

Electrical Specifications  

3.2  

SiC Diode Characteristics (Per SiC Diode)  

The following table shows the SiC diode characteristics (per SiC diode) of MSCSM120AM03CT6LIAG device.  

Table 5 • SiC Diode Characteristics (Per SiC Diode)  

Symbol  

V

RRM  

I

RM  

Characteristic

s

 

Test Conditions  

Min  

Typ  

Max  

1200  

1

Unit  

V

Peak repetitive reverse voltage  

Reverse leakage current  

V

R

= 1200 V  

T

J

= 25 °C  

T

J

= 175 °C  

T

C

= 95 °C  

T

J

= 25 °C  

T

J

= 175 °C  

0.08  

1.25  

250  

1.5  

mA  

I

F  

DC forward current  

A

V

V

F  

Diode forward voltage  

I

F

= 250 A  

V

R

= 600 V  

1.8  

2.1  

Q

C  

C

Total capacitive charge  

Total capacitance  

1120  

1230  

910  

nC  

pF  

f = 1 MHz, V

R

= 400 V  

f = 1 MHz, V

R

= 800 V  

R

thJC  

Junction-to-case thermal resistance  

0.126  

°C/W  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

6

Electrical Specifications  

3.3  

Thermal and Package Characteristics  

The following table shows the package characteristics of MSCSM120AM03CT6LIAG device.  

Table 6 • Package Characteristics  

Symbol  

V

ISOL  

T

J  

Characteristics  

Min  

4000  

–40  

–40  

–40  

–40  

0.4  

2

Max  

Unit  

V

RMS isolation voltage, any terminal to case t =1 min, 50/60 Hz  

Operating junction temperature range  

Recommended junction temperature under switching conditions  

Storage temperature range  

175  

T

Jmax

–25  

125  

125  

0.6  

3

°C  

T

JOP  

T

STG  

T

C  

Operating case temperature  

Torque  

Mounting torque  

For terminals  

To heatsink  

M2.5  

M4  

N.m  

M5  

2

3.5  

5

M6  

3

L

DC  

Wt  

Module stray inductance between V

BUS

and 0/V

BUS  

Package weight  

3

nH  

g

320  

The following table shows the temperature sensor NTC of MSCSM120AM03CT6LIAG device.  

Table 7 • Temperature Sensor NTC  

Symbol  

R

25  

Characteristics  

Min  

Typ  

50  

5

Max  

Unit  

kΩ  

%

Resistance at 25°C  

ΔR

25

/R

25  

B

25/85  

ΔB/B  

T

25

= 298.15 K  

3952  

4

K

T

C

= 100°C  

%

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

7

Electrical Specifications  

3.4  

SiC MOSFET Performance Curves  

The following images show the SiC MOSFET performance curves of the MSCSM120AM03CT6LIAG device.  

Figure 3 • Maximum Thermal Impedance  

Figure 4 • Output Characteristics, T

J

= 25 °C  

Figure 5 • Output Characteristics, T

J

= 175 °C  

Figure 6 • Normalized R

DS(on)

vs. Temperature  

Figure 7 • Transfer Characteristics  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

8

Electrical Specifications  

Figure 8 • Switching Energy vs. Rg  

Figure 9 • Switching Energy vs. Current  

Figure 10 • Capacitance vs. Drain Source Voltage

 

Figure 11 • Gate Charge vs. Gate Source Voltage  

Figure 12 • Body Diode Characteristics, T

J

=25 °C  

Figure 13 • 3

rd

Quadrant Characteristics, T

J

=25 °C  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

9

Electrical Specifications  

Figure 14 • Body Diode Characteristics, T

J

=175 °C

 

Figure 15 • 3

rd

Quadrant Characteristics, T

J

=175 °C  

Figure 16 • Operating Frequency vs. Drain Current  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

10  

Electrical Specifications  

3.5  

SiC Diode Performance Curves  

The following images show the SiC diode performance curves of MSCSM120AM03CT6LIAG device.  

Figure 17 • Maximum Thermal Impedance  

Figure 18 • Forward Characteristics  

Figure 19 • Capacitance vs. Reverse Voltage  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

11  

Package Specification  

4

Package Specification  

The following section shows the package specification of MSCSM120AM03CT6LIAG device.  

4.1  

Package Outline Drawing  

The following image illustrates the package outline drawing of MSCSM120AM03CT6LIAG device. The  

dimensions are in millimeters.  

Figure 20 • Package Outline Drawing  

Note:  

See

application  

note.  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

12  

Legal  

Microsemi’s product warranty is set forth in Microsemi’s Sales Order Terms and Conditions. Information  

contained in this publication is provided for the sole purpose of designing with and using Microsemi  

products. Information regarding device applications and the like is provided only for your convenience  

and may be superseded by updates. Buyer shall not rely on any data and performance specifications or  

parameters provided by Microsemi. It is your responsibility to ensure that your application meets with  

your specifications. THIS INFORMATION IS PROVIDED “AS IS.” MICROSEMI MAKES NO REPRESENTATIONS  

OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR  

OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALIT

Y

,  

PERFORMANCE, NON-INFRINGEMEN

T

,

M

ERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE.  

IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIREC

T

,

S

PECIAL, PUNITIVE, INCIDENTAL OR  

CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION  

OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE  

DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LA

W

,

M

ICROSEMI’

S

T

OTAL LIABILITY  

ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF  

FEES, IF AN

Y

,

Y

OU PAID DIRECTLY TO MICROSEMI FOR THIS INFORMATION. Use of Microsemi devices  

in life support, mission-critical equipment or applications, and/or safety applications is entirely at the  

buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims,  

suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any  

Microsemi intellectual property rights unless otherwise stated.  

Microsemi  

2355

W

.

C

handler Blvd.  

Chandler, AZ 85224 USA  

Within the USA: +1 (480) 792-7200  

Fax: +1 (480) 792-7277  

©

its corporate affiliates. All rights reserved.  

Microsemi and the Microsemi logo are  

trademarks of Microsemi Corporation and its  

corporate affiliates. All other trademarks and  

service marks are the property of their  

respective owners.  

Microsemi Corporation, a subsidiary of Microchip Technology Inc. (Nasdaq: MCHP),  

and its corporate affiliates are leading providers of smart, connected and secure  

embedded control solutions. Their easy-to-use development tools and  

comprehensive product portfolio enable customers to create optimal designs which  

reduce risk while lowering total system cost and time to market. These solutions  

serve more than 120,000 customers across the industrial, automotive, consumer,  

aerospace and defense, communications and computing markets. Headquartered  

in Chandler, Arizona, the company offers outstanding technical support along with  

dependable delivery and quality. Learn more at

.  

MSCC-0344-DS-01073-1.0-0120  

Microsemi Proprietary and Confidential MSCSM120AM03CT6LIAG Datasheet Revision 1.0  

13