Microchip-Tech-MSCSM120TAM31CT3AG
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MSCSM120TAM31CT3AG
Datasheet
3 Phase Bridge SiC MOSFET Power Module
January 2020
Contents
Contents
Revision History……………………………………………………………………………………………………………………1
1.1 Revision 1.0………………………………………………………………………………………………………………………………………1
Product Overview…………………………………………………………………………………………………………………2
2.1 Features…………………………………………………………………………………………………………………………………………..3
2.2 Benefits……………………………………………………………………………………………………………………………………………3
2.3 Applications……………………………………………………………………………………………………………………………………..3
Electrical Specifications…………………………………………………………………………………………………………4
3.1 SiC MOSFET Characteristics (Per SiC MOSFET)………………………………………………………………………………………4
3.2 SiC Schottky Diode Ratings and Characteristics (Per SiC Diode)……………………………………………………………….6
3.3 Thermal and Package Characteristics…………………………………………………………………………………………………..6
3.4 Typical SiC MOSFET Performance Curves……………………………………………………………………………………………..8
3.5 Typical SiC Diode Performance Curves……………………………………………………………………………………………….11
Package Specifications…………………………………………………………………………………………………………12
4.1 Package Outline Drawing………………………………………………………………………………………………………………….12
Microsemi Proprietary and Confidential MSCSM120TAM31CT3AG Datasheet Revision 1.0
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Revision History
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are listed
by revision, starting with the most current publication.
1.1
Revision 1.0
Revision 1.0 was published in January 2020. It is the first publication of this document.
Microsemi Proprietary and Confidential MSCSM120TAM31CT3AG Datasheet Revision 1.0
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Product Overview
2
Product Overview
The MSCSM120TAM31CT3AG device is a 3 phase leg 1200 V/89 A full Silicon Carbide (SiC) power module.
Figure 1 • MSCSM120TAM31CT3AG Electrical Schematic
Figure 2 • MSCSM120TAM31CT3AG Pinout Location
All ratings at T
J
= 25 °C, unless otherwise specified.
Caution
: These devices are sensitive to electrostatic discharge. Proper handling procedures should be
followed.
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Product Overview
2.1
Features
The following are key features of the MSCSM120TAM31CT3AG device:
•
SiC Power MOSFET
◦
◦
◦
High speed switching
Low R
DS(on)
Ultra low loss
•
SiC Schottky Diode
◦
◦
◦
◦
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum nitride (AlN) substrate for improved thermal performance
•
•
•
•
2.2
2.3
Benefits
The following are benefits of the MSCSM120TAM31CT3AG device:
•
•
•
•
•
•
•
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals for power and signal, for easy PCB mounting
Low profile
RoHS compliant
Applications
The MSCSM120TAM31CT3AG device is designed for the following applications:
•
•
•
•
Uninterruptible Power Supplies
Switched Mode Power Supplies
EV motor and traction drive
Welding converters
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Electrical Specifications
3
Electrical Specifications
This section shows the electrical specifications of the MSCSM120TAM31CT3AG device.
3.1
SiC MOSFET Characteristics (Per SiC MOSFET)
The following table shows the absolute maximum ratings per SiC MOSFET of the MSCSM120TAM31CT3AG
device.
Table 1 • Absolute Maximum Ratings
Symbol
V
DSS
I
D
Parameter
Max Ratings
Unit
V
Drain-source voltage
Continuous drain current
1200
89
T
C
= 25 °C
T
C
= 80 °C
A
71
I
DM
V
GS
R
DSon
P
D
Pulsed drain current
Gate-source voltage
Drain-source ON resistance
Power dissipation
180
–10/25
31
V
mΩ
W
T
C
= 25 °C
395
The following table shows the electrical characteristics per SiC MOSFET of the MSCSM120TAM31CT3AG
device.
Table 2 • Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
I
DSS
Zero gate voltage drain current
V
GS
= 0 V; V
DS
= 1200 V
10
100
µA
R
DS(on)
Drain-source on resistance
V
GS
= 20 V
I
D
= 40 A
T
J
= 25 °C
25
40
2.8
31
mΩ
T
J
= 175 °C
V
GS(th)
I
GSS
Gate threshold voltage
V
GS
= V
DS
, I
D
= 1 mA
V
GS
= 20 V, V
DS
= 0 V
1.8
V
Gate-source leakage current
150
nA
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Electrical Specifications
The following table shows the dynamic characteristics per SiC MOSFET of the MSCSM120TAM31CT3AG
device.
Table 3 • Dynamic Characteristics
Symbol
C
iss
Characteristic
Test Conditions
Min
Typ
3020
270
25
Max
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
V
GS
= 0 V
pF
V
DS
= 1000 V
f = 1 MHz
C
oss
C
rss
Q
g
V
GS
= –5 V/20 V
V
Bus
= 800 V
I
D
= 40 A
232
41
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
50
V
GS
= –5 V/20 V
V
Bus
= 800 V
30
30
I
D
= 50 A
R
Gon
= 8 Ω; R
Goff
= 4.7 Ω
T
d(off)
T
f
Turn-off delay time
Fall time
50
25
E
on
Turn on energy
Inductive switching
V
GS
= –5 V/20 V
V
Bus
= 600 V
I
D
= 50 A
T
J
= 150 °C
T
J
= 150 °C
0.99
0.66
mJ
mJ
E
off
Turn off energy
R
Gon
= 8 Ω
R
Goff
= 4.7 Ω
R
Gint
R
thJC
Internal gate resistance
0.88
Ω
Junction-to-case thermal resistance
0.38
°C/W
The following table shows the body diode ratings and characteristics per SiC MOSFET of the
MSCSM120TAM31CT3AG device.
Table 4 • Body Diode Ratings and Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
4.0
4.2
90
Max
Unit
V
SD
Diode forward voltage
V
GS
= 0 V; I
SD
= 40 A
V
GS
= –5V ; I
SD
= 40 A
V
t
rr
Q
rr
I
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40 A; V
GS
= –5 V
ns
nC
A
V
R
= 800 V; d
iF
/dt = 1000 A/μs
550
13.5
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Electrical Specifications
3.2
SiC Schottky Diode Ratings and Characteristics (Per SiC Diode)
The following table shows the SiC diode ratings and characteristics per SiC diode of the
MSCSM120TAM31CT3AG device.
Table 5 • SiC Schottky Diode Ratings and Characteristics
Symbol Characteristic
V
RRM
Peak repetitive reverse voltage
I
RM
Test Conditions
Min
Typ
Max
1200
200
Unit
V
Reverse leakage current
V
R
= 1200 V
T
J
= 25 °C
T
J
= 175 °C
T
C
= 100 °C
T
J
= 25 °C
10
μA
150
30
I
F
DC forward current
A
V
V
F
Diode forward voltage
I
F
= 30 A
1.5
2.1
130
141
105
1.8
T
J
= 175 °C
Qc
C
Total capacitive charge
Total capacitance
V
R
= 600 V
nC
pF
f = 1 MHz, V
R
= 400 V
f = 1 MHz, V
R
= 800 V
R
thJC
Junction-to-case thermal resistance
0.9
°C/W
3.3
Thermal and Package Characteristics
The following table shows the package characteristics of the MSCSM120TAM31CT3AG device.
Table 6 • Package Characteristics
Symbol
V
ISOL
T
J
Characteristic
Min
4000
–40
–40
–40
–40
2
Max
Unit
RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage temperature range
V
175
°C
T
JOP
T
STG
T
C
T
Jmax
–25
125
Operating case temperature
125
Torque
Wt
Mounting torque
Package weight
To heatsink
M4
3
N.m
g
110
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Electrical Specifications
Table 7 • Temperature Sensor NTC
Symbol
R
25
Characteristic
Min
Typ
50
5
Max
Unit
kΩ
%
Resistance at 25 °C
∆R
25
/R
25
B
25/85
∆B/B
T
25
= 298.15 K
3952
4
K
T
C
= 100 °C
%
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Electrical Specifications
3.4
Typical SiC MOSFET Performance Curves
This section shows the typical SiC MOSFET performance curves of the MSCSM120TAM31CT3AG device.
Figure 3 • Maximum Thermal Impedance
Figure 4 • Output Characteristics, T
J
= 25 °C
Figure 5 • Output Characteristics, T
J
= 175 °C
Figure 6 • Normalized R
DS(on)
vs. Temperature
Figure 7 • Transfer Characteristics
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Electrical Specifications
Figure 8 • Switching Energy vs. Rg
Figure 9 • Switching Energy vs. Current
Figure 10 • Capacitance vs. Drain Source Voltage
Figure 11 • Gate Charge vs. Gate Source Voltage
Figure 12 • Body Diode Characteristics, T
J
= 25 °C
Figure 13 • 3
rd
Quadrant Characteristics, T
J
= 25 °C
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Electrical Specifications
Figure 14 • Body Diode Characteristics, T
J
= 175 °C
Figure 15 • 3
rd
Quadrant Characteristics, T
J
= 175
°C
Figure 16 • Operating Frequency vs. Drain Current
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Electrical Specifications
3.5
Typical SiC Diode Performance Curves
This sections shows the typical SiC diode performance curves of the MSCSM120TAM31CT3AG device.
Figure 17 • Maximum Thermal Impedance
Figure 18 • Forward Characteristics
Figure 19 • Capacitance vs. Reverse Voltage
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Package Specifications
4
Package Specifications
This section shows the package specification of the MSCSM120TAM31CT3AG device.
4.1
Package Outline Drawing
The following figure illustrates the package outline of the MSCSM120TAM31CT3AG device. The dimensions
in the following figure are in millimeters.
Figure 20 • Package Outline Drawing
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