Microchip-Tech-MSCSM70AM19T1AG
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MSCSM70AM19T1AG
Phase Leg SiC MOSFET Power Module
Product Overview
The MSCSM70AM19T1AG device is a full bridge 700
V
,
1
24A silicon carbide (SiC) power module.
Notes:ꢀ
•
•
Pins 1/2; 4/5; 7/8 must be shorted together.
All ratings at T
J
= 25 °C, unless otherwise specified.
These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
CAUTION
DS00004605A-page 1
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Features
The following are key features of the MSCSM70AM19T1AG device:
•
SiC Power MOSFET
– High
speed switching
– Low
R
DS(on)
– Ultra
low loss
•
•
•
•
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
The following are the benefits of MSCSM70AM19T1AG device:
•
•
•
•
•
•
•
High efficiency converter
Outstanding performance at high frequency operation
Solderable terminals both for power and signal for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low profile
RoHS compliant
Application
The MSCSM70AM19T1AG device is designed for the following applications:
•
•
•
•
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
DS00004605A-page 2
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Electrical Specifications
1.
Electrical Specifications
This section provides the electrical specifications of the MSCSM70AM19T1AG device.
1.1
SiC MOSFET Characteristics (Per SiC MOSFET)
The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM70AM19T1AG device.
Table 1-1. Absolute Maximum Ratings
Symbol
V
DSS
I
D
Parameter
Maximum Ratings
Unit
V
Drain-Source voltage
Continuous drain current
700
124
1
98
1
T
C
= 25 °C
T
C
= 80 °C
A
I
DM
Pulsed drain current
Gate-Source voltage
Drain-Source ON resistance
Power dissipation
250
–10/23
19
V
GS
R
DS(on)
P
D
V
mΩ
W
T
C
= 25 °C
365
Note:ꢀ
1. Specification
of SiC MOSFET device but output current must be limited due to size of power connectors.
The following table lists the electrical characteristics per SiC MOSFET of the MSCSM70AM19T1AG device.
Table 1-2. Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
I
DSS
Zero gate voltage drain
current
V
GS
= 0V
V
DS
= 700V
—
—
100
µA
R
DS(on)
Drain–Source on
resistance
V
GS
= 20V
I
D
= 40A
T
J
= 25 °C
—
15
19
—
—
mΩ
T
J
= 175 °C
—
18.8
2.4
V
GS(th)
Gate threshold voltage
V
GS
= V
DS
I
D
= 4 mA
1.9
V
I
GSS
Gate–Source leakage
current
V
GS
= 20V; V
DS
= 0V
—
—
150
nA
DS00004605A-page 3
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Electrical Specifications
The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM70AM19T1AG device.
Table 1-3. Dynamic Characteristics
Symbol Characteristic
Test Conditions
V
GS
= 0V
Min.
—
Typ.
4500
510
29
Max.
—
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
pF
V
DS
= 700V
f = 1 MHz
—
—
Reverse transfer
capacitance
—
—
Q
g
T
o
tal gate charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
V
GS
= –5V/20V
V
Bus
= 470V
I
D
= 40A
—
—
—
—
—
—
215
58
35
40
40
50
20
—
—
—
—
—
—
—
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
V
GS
= –5V/20V
V
Bus
= 400V
I
D
= 80A
T
J
= 150°C
T
d(off)
T
f
Turn-off delay time
Fall time
R
G(on)
= 68Ω
R
G(off)
= 4.7Ω
E
on
E
off
Turn-on energy
Turn-off energy
V
GS
= –5V/20V
V
Bus
= 400V
I
D
= 80A
T
J
= 150 °C
—
T
J
= 150 °C
—
893
194
—
—
μJ
R
G(on)
= 68Ω
R
G(off)
= 4.7Ω
R
Gint
R
thJC
Internal gate resistance
—
—
0.69
—
—
Ω
Junction-to-case thermal resistance
0.41
°C/W
The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM70AM19T1AG
device.
Table 1-4. Body Diode Ratings and Characteristics
Symbol Characteristic
Test Conditions
Min.
—
Typ.
3.4
Max.
—
Unit
V
SD
Diode forward voltage
V
GS
= 0V; I
SD
= 40A
V
GS
= –5V; I
SD
= 40A
V
—
3.8
—
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40A; V
GS
= –5V
—
—
—
38
—
—
—
ns
nC
A
V
R
= 400V; di
F
/dt = 1000 A/µs
Q
rr
I
rr
318
14.8
DS00004605A-page 4
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Electrical Specifications
1.2
Thermal and Package Characteristics
The following table lists the thermal and package characteristics of the MSCSM70AM19T1AG device.
Table 1-5. Thermal and Package Characteristics
Symbol
V
ISOL
T
J
Characteristics
Min
Max
—
Unit
V
RMS isolation voltage, any terminal to case t =1 min, 50 Hz/60 Hz
4000
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage temperature range
–40
–40
–40
–40
2
175
T
Jmax
–25
125
125
3
°C
T
JOP
T
STG
T
C
Operating case temperature
T
o
rque
Wt
Mounting torque
Package weight
To
h
eatsink
M4
N.m
g
—
80
The following table lists the temperature sensor NTC of the MSCSM70AM19T1AG device.
Table 1-6. Temperature Sensor NTC
Symbol
R
25
Characteristic
Min
—
Typ
50
Max
—
Unit
kΩ
%
Resistance at 25°C
ΔR
25
/R
25
B
25/85
—
—
—
5
—
T
25
= 298.15 K
—
—
—
3952
4
—
K
ΔB/B
T
C
= 100 °C
—
—
%
1.3
Typical SiC MOSFET Performance Curve
This section shows the typical SiC MOSFET performance curves of the MSCSM70AM19T1AG device.
DS00004605A-page 5
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Electrical Specifications
Figure 1-1. Maximum Thermal Impedance
1
0.1
1
2
3
4
5
6
7
Ri (°C/W)
0.008 0.105 0.025 0.095 0.016 0.104 0.056
taui (s)
0.004 0.003 0.008 0.029 0.026 0.009 0.055
0.01
0.001
0.01
0.1
ti
m
e (s)
1
Figure 1-2. Output Characteristics, T
J
= 25 °C
Figure 1-3. Output Characteristics, T
J
= 175 °C
150
150
T
J
=175
°
C
T
J
=25
°
C
125
125
V
G
S
=20V
100
V
G
S
=20V
100
V
G
S
=18V
V
G
S
=18V
75
75
50
25
50
25
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
, D
r
ain Source Voltage (V)
V
DS
, D
r
ain Source Voltage (V)
Figure 1-4. Normalized R
DS(on)
vs. Temperature
Figure 1-5. Transfer Characteristics
150
1.40
V
GS
=20V
I
D
=40A
125
1.30
100
1.20
1.10
1.00
0.90
0.80
T
J
=175°C
75
50
25
T
J
=25°C
0
25
50
75 100
125 150 175
2
4
6
8
10
12
T
J
, Junction Temperature (°C)
V
G
S
, Gate Source Voltage (V)
DS00004605A-page 6
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Electrical Specifications
Figure 1-6. Switching Energy vs. Current
Figure 1-7. Turn On Energy vs. Rg
1200
1700
1550
1400
1250
1100
950
V
GS
=-5/20V
R
GO
N
=68
Ω
R
GOFF
=4.7
Ω
V
BUS
= 400V
T
J
= 150
°
C
1000
800
600
400
200
0
Eon
Eon
V
GS
=-5/20V
I
D
= 80A
Eo
f
f
V
BUS
= 400V
T
J
= 150
°
C
800
0
20
40
60
80
100
65 70 75 80 85 90 95
100
Current (A)
Gate resistan
c
e
(Ω
)
Figure 1-8. Capacitance vs. Drain Source Voltage
Figure 1-9. Gate Charge vs. Gate Source Voltage
20
10000
T
J
= 25
°
C
I
D
= 40A
15
10
5
V
DS
= 470V
Ci
s
s
1000
Co
s
s
100
0
C
r
ss
600
-5
10
0
50
100
150
200
0
200
400
Gate Charge (nC)
V
DS
, D
r
ain source Voltage (V)
Figure 1-10. Body Diode Characteristics, T
J
= 25 °C
Figure 1-11. 3
rd
Quadrant Characteristics, T
J
= 25 °C
-5
-4
-3
-2
-1
0
–
5
.
0 –
4
.
5 –
4
.
0 –
3
.
5 –
3
.
0 –
2
.
5 –
2
.
0 –
1
.
5
0
0
V
GS
=-5V
T
J
=25
°
C
–
2
5
–
5
0
–
7
5
–
1
00
–
1
25
–
1
5
0
–
2
5
–
5
0
V
GS
=0V
V
GS
=0V
V
GS
=5V
–
7
5
V
GS
=-2V
–
1
00
V
GS
=18V
V
GS
=20V
–
1
25
T
J
=25
°
C
–
1
50
V
DS
, D
r
ain source voltage (V)
V
DS
, D
r
ain source voltage (V)
DS00004605A-page 7
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Electrical Specifications
Figure 1-12. Body Diode Characteristics, T
J
= 175 °C
Figure 1-13. 3
rd
Quadrant Characteristics, T
J
= 175 °C
–
4
.
5 –
4
.
0 –
3
.
5 –
3
.
0 –
2
.
5 –
2
.
0 –
1
.
5 –
1
.
0
-5
-4
-3
-2
-1
0
0
0
V
GS
=-5V
T
J
=175
°
C
–
2
5
–
5
0
–
7
5
–
1
00
–
1
25
–
1
50
–
2
5
–
5
0
–
7
5
–
1
0
0
–
1
25
–
1
50
V
GS
=0V
V
GS
=0V
V
GS
=5V
V
GS
=-2V
V
GS
=18V
V
GS
=20V
T
J
=175
°
C
V
DS
, D
r
ain source voltage (V)
V
DS
, D
r
ain source voltage (V)
Figure 1-14. Operating Frequency vs Drain Current
Figure 1-15. Turn Off Energy vs. Rg
600
600
V
BUS
=400V
D=50%
R
GO
N
=68
Ω
500
500
R
GOFF
=4.7
Ω
T
J
=150
°
C
T
C
=75
°
C
Eo
f
f
400
300
200
100
0
400
Hard
s
w
itching
300
200
100
V
GS
=-5/20V
I
D
= 80A
V
BUS
= 400V
T
J
= 150
°
C
0
20
40
60
80
100
4
5
6
7
8
9
10
I
D
, D
r
ain Curre
n
t
(
A)
Gate resistan
c
e
(
Ω
)
DS00004605A-page 8
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Package Specifications
2.
Package Specifications
The following section shows the package specification of the MSCSM70AM19T1AG device.
2.1
Package Outline
The following figure shows the package outline drawing of the MSCSM70AM19T1AG device. The dimensions in the
following figure are in millimeters.
Figure 2-1. Package Outline Drawing
DS00004605A-page 9
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
Revision History
3.
Revision History
Revision
Date
Description
Initial Revision
A
06/2022
DS00004605A-page 10
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
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DS00004605A-page 11
Data Sheet
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e
chnology Inc.
and its subsidiaries
MSCSM70AM19T1AG
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ISBN: 978-1-6683-0747-2
DS00004605A-page 12
Data Sheet
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l: 358-9-4520-820
France – Paris
Atlanta
T
e
l: 81-3-6880- 3770
Korea – Daegu
T
e
l: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany – Garching
T
e
l: 49-8931-9700
Duluth, GA
T
e
l: 678-957-9614
Fax: 678-957-1455
Austin, TX
T
e
l: 82-53-744-4301
Korea – Seoul
T
e
l: 82-2-554-7200
Malaysia – Kuala Lumpur
T
e
l: 60-3-7651-7906
Malaysia – Penang
T
e
l: 60-4-227-8870
Philippines – Manila
T
e
l: 63-2-634-9065
Singapore
Germany – Haan
T
e
l: 512-257-3370
Boston
T
e
l: 49-2129-3766400
Germany – Heilbronn
T
e
l: 49-7131-72400
Germany – Karlsruhe
T
e
l: 49-721-625370
Germany – Munich
T
e
l: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany – Rosenheim
T
e
l: 49-8031-354-560
Israel – Ra’anana
Westborough, MA
T
e
l: 774-760-0087
Fax: 774-760-0088
Chicago
T
e
l: 86-25-8473-2460
China – Qingdao
T
e
l: 86-532-8502-7355
China – Shanghai
T
e
l: 86-21-3326-8000
China – Shenyang
T
e
l: 86-24-2334-2829
China – Shenzhen
T
e
l: 86-755-8864-2200
China – Suzhou
Itasca, IL
T
e
l: 630-285-0071
Fax: 630-285-0075
Dallas
T
e
l: 65-6334-8870
Taiwan – Hsin Chu
T
e
l: 886-3-577-8366
Taiwan – Kaohsiung
T
e
l: 886-7-213-7830
Taiwan – Taipei
Addison, TX
T
e
l: 972-818-7423
Fax: 972-818-2924
Detroit
T
e
l: 972-9-744-7705
Italy – Milan
T
e
l: 86-186-6233-1526
China – Wuhan
T
e
l: 886-2-2508-8600
Thailand – Bangkok
T
e
l: 66-2-694-1351
Vietnam – Ho Chi Minh
T
e
l: 84-28-5448-2100
T
e
l: 39-0331-742611
Fax: 39-0331-466781
Italy – Padova
Novi, MI
T
e
l: 248-848-4000
Houston, TX
T
e
l: 86-27-5980-5300
China – Xian
T
e
l: 39-049-7625286
Netherlands – Drunen
T
e
l: 31-416-690399
Fax: 31-416-690340
Norway – Trondheim
T
e
l: 47-72884388
T
e
l: 281-894-5983
Indianapolis
T
e
l: 86-29-8833-7252
China – Xiamen
Noblesville, IN
T
e
l: 86-592-2388138
China – Zhuhai
T
e
l: 317-773-8323
Fax: 317-773-5453
T
e
l: 317-536-2380
Los Angeles
T
e
l: 86-756-3210040
Poland – Warsaw
T
e
l: 48-22-3325737
Romania – Bucharest
T
e
l: 40-21-407-87-50
Spain – Madrid
Mission Viejo, CA
T
e
l: 949-462-9523
Fax: 949-462-9608
T
e
l: 951-273-7800
Raleigh, NC
T
e
l: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden – Gothenberg
T
e
l: 46-31-704-60-40
Sweden – Stockholm
T
e
l: 46-8-5090-4654
UK – Wokingham
T
e
l: 919-844-7510
New York, NY
T
e
l: 631-435-6000
San Jose, CA
T
e
l: 408-735-9110
T
e
l: 408-436-4270
Canada – Toronto
T
e
l: 905-695-1980
Fax: 905-695-2078
T
e
l: 44-118-921-5800
Fax: 44-118-921-5820
DS00004605A-page 14
Data Sheet
©
2022 Microchip
T
e
chnology Inc.
and its subsidiaries
