Microchip-Tech-MSCSM70DUM025AG
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MSCSM70DUM025AG
Dual Common Source SiC MOSFET Power Module
Product Overview
The MSCSM70DUM025AG device is a 700V/689A dual common source silicon carbide (SiC) MOSFET power
module.
S
D1
D2
All ratings at T
J
= 25 °C, unless otherwise specified.
These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
CAUTION
DS00004338A-page 1
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Features
The following are the key features of MSCSM70DUM025AG device:
•
SiC Power MOSFET
– Low
R
DS(on)
– High
temperature performance
Kelvin source for easy drive
Low stray inductance
•
•
•
•
•
High level of integration
Aluminum Nitride (AlN) substrate for improved thermal performance
M5 power connectors
Benefits
The following are the benefits of MSCSM70DUM025AG device:
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low profile
RoHS compliant
Application
The following are the applications of MSCSM70DUM025AG device:
•
•
•
AC switches
Switched mode power supplies
Uninterruptible power supplies
DS00004338A-page 2
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Electrical Specifications
1.
Electrical Specifications
This section provides the electrical specifications of the MSCSM70DUM025AG device.
1.1
SiC MOSFET Characteristics (Per SiC MOSFET)
The following table lists the absolute maximum ratings of MSCSM70DUM025AG device.
Table 1-1. Absolute Maximum Ratings
Symbol
V
DSS
I
D
Parameter
Maximum Ratings
Unit
V
Drain-Source voltage
Continuous drain current
700
T
C
= 25 °C
T
C
= 80 °C
689
A
548
I
DM
Pulsed drain current
Gate-Source voltage
Drain-Source ON resistance
Power dissipation
1380
–10/25
3.2
V
GSmax
R
DS(on)
P
D
V
mΩ
W
T
C
= 25 °C
1882
The following table lists the electrical characteristics of MSCSM70DUM025AG device.
Table 1-2. Electrical Characteristics
Symbol
Characteristic
Test Conditions
V
GS
= 0V
Min.
Typ.
Max.
Unit
I
DSS
Zero gate voltage
drain current
—
—
600
µA
mΩ
V
V
DS
= 700V
R
DS(on)
V
GS(th)
I
GSS
Drain–Source on
resistance
V
GS
= 20V
I
D
= 240A
T
J
= 25 °C
—
2.5
3.2
2.4
3.2
—
T
J
= 175 °C
—
Gate threshold
voltage
V
GS
= V
DS
I
D
= 24 mA
1.9
—
Gate–Source
leakage current
V
GS
= 20V
V
DS
= 0V
—
—
600
nA
DS00004338A-page 3
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Electrical Specifications
The following table lists the dynamic characteristics of MSCSM70DUM025AG device.
Table 1-3. Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min.
—
Typ.
27
Max.
—
Unit
C
C
C
Input capacitance
Output capacitance
V
V
= 0V
nF
iss
GS
DS
= 700V
—
3
—
oss
rss
f = 1 MHz
Reverse transfer
capacitance
—
0.17
—
Q
Q
Q
T
o
tal gate charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
V
V
= –5V/20V
= 470V
—
—
—
—
—
—
1290
348
210
78
—
—
—
—
—
—
—
nC
ns
g
GS
Bus
gs
I
= 240A
D
gd
T
T
T
T
V
V
= –5V/20V
= 400V
T =
150 °C
J
d(on)
GS
Bus
125
214
92
r
I
= 480A
D
Turn-off delay time
Fall time
d(off)
f
R
R
= 4.7Ω
= 2.7Ω
Gon
Goff
E
E
Turn-on energy
Turn-off energy
V
V
= –5V/20V
= 400V
T =
150 °C
—
—
7.3
—
—
mJ
on
off
GS
J
Bus
T =
150 °C
J
10.5
I
= 480A
D
R
R
= 4.7Ω
= 2.7Ω
Gon
Goff
R
R
Internal gate resistance
—
—
0.95
—
—
Ω
Gint
Junction-to-case thermal resistance
0.08
°C/W
thJC
The following table lists the body diode ratings and characteristics of MSCSM70DUM025AG device.
Table 1-4. Body Diode Ratings and Characteristics
Symbol Characteristic
Test Conditions
V
GS
= 0V
Min.
Typ.
Max.
Unit
V
SD
Diode forward voltage
—
3.4
—
V
I
SD
= 240A
V
GS
= –5V
I
SD
= 240A
—
3.8
—
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 240A
—
—
—
40
1.9
89
—
—
—
ns
μC
A
V
GS
= –5V
Q
rr
I
rr
V
R
= 400V
di
F
/dt = 6000A/µs
DS00004338A-page 4
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Electrical Specifications
1.2
Thermal and Package Characteristics
The following table lists the thermal and package characteristics of the MSCSM70DUM025AG device.
Table 1-5. Thermal and Package Characteristics
Symbol
V
ISOL
T
J
Characteristic
Min.
Max.
—
Unit
V
RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz
4000
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage case temperature
–40
–40
–40
–40
3
175
T
Jmax
–25
125
125
5
°C
T
JOP
T
STG
T
C
Operating case temperature
T
o
rque
Mounting torque
To
h
eatsink
M6
M5
N.m
g
For terminals
2
3.5
Wt
Package weight
—
320
1.3
Typical SiC MOSFET Performance Curve (Per SiC MOSFET)
This section shows the typical SiC MOSFET performance curves of the MSCSM70DUM025AG device.
Figure 1-1. Junction-to-Heatsink Thermal Impedance
0.1
1
2
3
4
5
6
7
Ri
ꢀ
(°C/W)
taui
ꢀ
(s)
0.002 0.020 0.005 0.019 0.003 0.020 0.011
0.004 0.003 0.008 0.029 0.026 0.009 0.055
0.01
0.001
0.01
0.1
1
time (
s
)
DS00004338A-page 5
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Electrical Specifications
Figure 1-2. Output Characteristics, T
J
= 25 °C
Figure 1-3. Output Characteristics, T
J
= 175 °C
900
900
T
J
=25°C
750
T
J
=175°C
750
V
GS
=20V
600
V
GS
=20V
600
V
GS
=18V
450
300
150
0
450
300
150
0
V
GS
=18V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
DS
, Drain Source Voltage (V)
V
DS
, Drain Source Voltage (V)
Figure 1-4. Normalized R
DS(on)
vs. Temperature
Figure 1-5. Transfer Characteristics
900
1.4
V
GS
=20V
I
D
=240A
1.3
1.2
1.1
1.0
0.9
0.8
750
600
T
J
=175°C
450
300
150
T
J
=25°C
25
50
75
100 125 150 175
0
2
4
6
8
10
12
T
J
, Junction
Temperature (°C)
V
GS
, Gate Source Voltage (V)
Figure 1-6. Capacitance vs. Drain Source Voltage
Figure 1-7. Gate Charge vs. Gate Source Voltage
100
20
T
J
= 25°C
I
D
= 240A
Ciss
15
V
DS
= 470V
10
10
5
Coss
1
0
Crss
0.1
-5
0
200
400
600
0
300
600
900
1200
1500
Gate Charge (nC)
V
DS
, Drain
s
o
urce
Voltage (V)
DS00004338A-page 6
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Electrical Specifications
Figure 1-8. Body Diode Characteristics, T
J
= 25 °C
Figure 1-9. 3
rd
Quadrant Characteristics, T
J
= 25 °C
-5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5
0
-5
-4
-3
-2
-1
0
0
V
GS
=-5V
T
J
=25°C
-150
-300
-450
-600
-750
-900
-150
V
GS
=0V
V
GS
=0V
-300
-450
-600
-750
-900
V
GS
=5V
V
GS
=-2V
V
GS
=18V
V
GS
=20V
T
J
=25°C
V
DS
, Drain
s
ource
voltage (V)
V
DS
, Drain
s
o
urce
voltage (V)
Figure 1-10. Body Diode Characteristics, T
J
= 175 °C
Figure 1-11. 3
rd
Quadrant Characteristics, T
J
= 175 °C
-5
-4
-3
-2
-1
0
-4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0
V
GS
=-5V
0
0
T
J
=175°C
-150
-300
-450
-600
-750
-900
-150
-300
-450
-600
-750
-900
V
GS
=0V
V
GS
=0V
V
GS
=5V
V
GS
=-2V
V
GS
=18V
V
GS
=20V
T
J
=175°C
V
DS
, Drain
s
ource
voltage (V)
V
DS
, Drain
s
o
urce
voltage (V)
Figure 1-12. Turn On Energy vs. Rg
Figure 1-13. Turn Off Energy vs. Rg
15
11
14
10
Eoff
13
Eon
9
12
11
10
V
GS
=-5/20V
I
D
= 480A
V
GS
=-5/20V
I
D
= 480A
V
BUS
= 400V
T
J
= 150°C
8
7
V
BUS
= 400V
T
J
= 150°C
2.5
3.0
3.5
4.0
4.5
5.0
4
5
6
7
8
9
10
Gate resistance (
Ω
)
Gate resistance (
Ω
)
DS00004338A-page 7
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Electrical Specifications
Figure 1-14. Switching Energy vs. Current
Figure 1-15. Operating Frequency vs. Drain Current
16
300
V
BUS
=400V
D=50%
R
GON
=4.7
R
GOFF
=2.7
T
J
=150°C
T
C
=75°C
V
GS
=-5/20V
14
Eoff
R
GON
=4.7
250
R
GOFF
=2.7
V
BUS
= 400V
T
J
= 150°C
12
10
8
200
150
100
50
Eon
6
4
Hard
switching
2
0
0
100 200 300 400 500 600
0
0
100 200 300 400 500 600
Current (A)
I
D
, Drain Current (A)
DS00004338A-page 8
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Package Specifications
2.
Package Specifications
The following section shows the package specification of the device.
2.1
Package Outline
The following figure shows the package outline drawing of the MSCSM70DUM025AG device. The dimensions in the
following figure are in millimeters.
Figure 2-1. Package Outline Drawing
DS00004338A-page 9
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
Revision History
3.
Revision History
Revision
Date
Description
Initial Revision.
A
12/2021
DS00004338A-page 10
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
MSCSM70DUM025AG
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DS00004338A-page 11
Datasheet
©
2021 Microchip
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MSCSM70DUM025AG
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Dallas
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e
l: 65-6334-8870
Taiwan – Hsin Chu
T
e
l: 886-3-577-8366
Taiwan – Kaohsiung
T
e
l: 886-7-213-7830
Taiwan – Taipei
Addison, TX
T
e
l: 972-818-7423
Fax: 972-818-2924
Detroit
T
e
l: 972-9-744-7705
Italy – Milan
T
e
l: 86-186-6233-1526
China – Wuhan
T
e
l: 886-2-2508-8600
Thailand – Bangkok
T
e
l: 66-2-694-1351
Vietnam – Ho Chi Minh
T
e
l: 84-28-5448-2100
T
e
l: 39-0331-742611
Fax: 39-0331-466781
Italy – Padova
Novi, MI
T
e
l: 248-848-4000
Houston, TX
T
e
l: 86-27-5980-5300
China – Xian
T
e
l: 39-049-7625286
Netherlands – Drunen
T
e
l: 31-416-690399
Fax: 31-416-690340
Norway – Trondheim
T
e
l: 47-72884388
T
e
l: 281-894-5983
Indianapolis
T
e
l: 86-29-8833-7252
China – Xiamen
Noblesville, IN
T
e
l: 86-592-2388138
China – Zhuhai
T
e
l: 317-773-8323
Fax: 317-773-5453
T
e
l: 317-536-2380
Los Angeles
T
e
l: 86-756-3210040
Poland – Warsaw
T
e
l: 48-22-3325737
Romania – Bucharest
T
e
l: 40-21-407-87-50
Spain – Madrid
Mission Viejo, CA
T
e
l: 949-462-9523
Fax: 949-462-9608
T
e
l: 951-273-7800
Raleigh, NC
T
e
l: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden – Gothenberg
T
e
l: 46-31-704-60-40
Sweden – Stockholm
T
e
l: 46-8-5090-4654
UK – Wokingham
T
e
l: 919-844-7510
New York, NY
T
e
l: 631-435-6000
San Jose, CA
T
e
l: 408-735-9110
T
e
l: 408-436-4270
Canada – Toronto
T
e
l: 905-695-1980
Fax: 905-695-2078
T
e
l: 44-118-921-5800
Fax: 44-118-921-5820
DS00004338A-page 14
Datasheet
©
2021 Microchip
T
e
chnology Inc.
and its subsidiaries
