Microchip-Tech-TC6320TG-G
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TC6320
N-Channel and P-Channel Enhancement-Mode MOSFET Pair
Features
General Description
• Integrated
Gate-to-source Resistor
• Integrated
Gate-to-source Zener Diode
• Low
Threshold
The TC6320 consists of high-voltage, low-threshold
N-channel and P-channel MOSFE
T
s
i
n 8-lead SOIC
and DFN packages. Both MOSFE
T
s
h
ave integrated
gate-to-source resistors and gate-to-source Zener
diode clamps which are desired for high-voltage pulser
• Low
On-resistance
• Low
Input Capacitance
applications. It is
a complimentary, high-speed,
• Fast
Switching Speeds
high-voltage, gate-clamped N-channel and P-channel
MOSFET pair, which utilizes an advanced vertical
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and with the high input impedance and
positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally
induced secondary breakdown.
• Free
from Secondary Breakdown
• Low
Input and Output Leakage
• Independent
Electrically Isolated N-channel and
P-channel
Applications
• High-voltage
Pulsers
• Amplifiers
Microchip’s vertical DMOS FE
T
s
a
re ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance
and fast switching speeds are desired.
• Buffers
• Piezoelectric
Transducer Drivers
• General
Purpose Line Drivers
• Logic-level
Interfaces
Package Types
8-lead SOIC
5-lead DFN
(
T
o
p view)
(
T
o
p view)
SN
GN
SP
GP
1
2
3
4
8
7
6
5
DN
DN
DP
DP
1
2
3
4
8
7
6
5
SN
GN
GP
SP
DN
DN
DP
DP
DN
DP
See
T
a
ble 2-1
and
T
a
ble 2-2
for pin information.
2017 Microchip Technology Inc.
DS20005697A-page 1
TC6320
Functional Block Diagram
SN
GN
DN
DN
N-Channel
P-Channel
GP
SP
DP
DP
DS20005697A-page 2
2017 Microchip Technology Inc.
TC6320
Typical Application Circuit
+100V
VH
VDD
OE
10nF
10nF
INA
INB
-100V
VL
VSS
MD12xx, MD17xx, or MD18xx
TC6320
2017 Microchip Technology Inc.
DS20005697A-page 3
TC6320
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-source Voltage ………………………………………………………………………………………………………………………. BV
DSS
Drain-to-gate Voltage
…………………………………………………………………………………………………………………………. BV
DGS
Operating Ambient
T
e
mperature, T
A
……………………………………………………………………………………… –55°C to +150°C
Storage
T
e
mperature, T
S
……………………………………………………………………………………………………… –55°C
to +150°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
N-CHANNEL ELECTRICAL CHARACTERISTICS
Electrical Specifications
: T
A
= T
J
= 25°C unless otherwise specified.
Parameter
Sym.
Min. Typ. Max.
Unit
Conditions
DC PARAMETER (
Note 1
unless otherwise specified)
Drain-to-source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
∆
V
GS(th)
R
GS
200
1
—
—
—
—
—
—
2
V
V
V
GS
= 0
V
,
I
D
= 2 mA
V
GS
= V
DS
, I
D
= 1 mA
Change in V
GS(th)
with
T
e
mperature
Gate-to-source Shunt Resistor
Gate-to-Source Zener Voltage
—
–4.5 mV/°C
V
GS
= V
DS
, I
D
= 1 mA (
Note 2
)
10
50
25
k
Ω
I
GS
= 100 µA
I
GS
= 2 mA
VZ
GS
13.2
V
V
DS
= Maximum rating,
—
—
—
—
10
1
µA
V
GS
= 0V
Zero-gate Voltage Drain Current
On-state Drain Current
I
DSS
V
DS
= 0.8 Maximum rating,
V
GS
= 0
V
, T
A
= 125°C (
Note 2
)
mA
1
—
—
—
—
—
—
—
8
V
GS
= 4.5
V
,
V
DS
= 25V
I
D(ON)
A
2
V
GS
= 10
V
,
V
DS
= 25V
V
GS
= 4.5
V
,
I
D
= 150 mA
GS
= 10
V
,
I
D
= 1A
—
—
—
Static Drain-to-source On-state
Resistance
R
DS(ON)
Ω
7
V
Change in R
DS(ON)
with
T
e
mperature
∆
R
DS(ON)
1
%/°C V
GS
= 4.5
V
,
I
D
= 150 mA (
Note 2
)
AC PARAMETER (
Note 2
)
Forward Transconductance
Input Capacitance
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
400
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
110
60
23
10
15
20
15
mmho V
DS
= 25
V
, I
D
= 500 mA
pF
V
GS
= 0
V
,
pF
pF
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
V
DS
= 25V,
f = 1 MHz
ns
ns
ns
ns
V
DD
= 25V,
Rise Time
I
D
= 1A,
R
GEN
= 25
ꢀ
Turn-off Delay Time
t
d(OFF)
t
f
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
V
SD
t
rr
—
—
—
1.8
—
V
V
GS
= 0
V
,
I
SD
= 500 mA (
Note 1
)
V
GS
= 0
V
,
I
SD
= 500 mA (
Note 2
)
300
ns
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty
cycle.
2:
Specification is obtained by characterization and is not 100% tested.
DS20005697A-page 4
2017 Microchip Technology Inc.
TC6320
P-CHANNEL ELECTRICAL CHARACTERISTICS
Electrical Specifications
: T
A
= T
J
= 25°C unless otherwise specified.
Parameter
Sym.
Min. Typ. Max.
Unit
Conditions
DC PARAMETER (
Note 1
unless otherwise specified)
Drain-to-source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
–200
—
—
—
—
—
—
V
V
V
GS
= 0
V
,
I
D
= –2 mA
V
GS
= V
DS
, I
D
= –1 mA
V
GS(th)
∆
V
GS(th)
R
GS
–1
—
–2.4
Change in V
GS(th)
with
T
e
mperature
Gate-to-source Shunt Resistor
Gate-to-Source Zener Voltage
4.5 mV/°C
V
GS
= V
DS
, I
D
= –1 mA (
Note 2
)
10
50
25
k
ꢀ
I
GS
= 100 µA
I
GS
= –2 mA
VZ
GS
13.2
V
V
DS
= Maximum rating,
V
GS
= 0V
—
—
—
—
–10
–1
µA
Zero-gate Voltage Drain Current
On-state Drain Current
I
DSS
V
DS
= 0.8 Maximum rating,
mA
V
GS
= 0
V
, T
A
= 125°C (
Note 2
)
V
GS
= –4.5
V
, V
DS
= –25V
V
GS
= –10
V
,
V
DS
= –25V
V
GS
= –4.5
V
,
I
D
= –150 mA
–1
–2
—
—
—
—
—
—
—
—
—
—
10
8
I
D(ON)
A
Static Drain-to-source On-state
Resistance
R
DS(ON)
ꢀ
V
GS
= –10
V
, I
D
= –1A
Change in R
DS(ON)
with
T
e
mperature
∆
R
DS(ON)
1
%/°C V
GS
= –10
V
,
I
D
= –200 mA (
Note 2
)
AC PARAMETER (
Note 2
)
Forward Transconductance
Input Capacitance
G
FS
400
—
—
—
—
mmho V
DS
= –25
V
, I
D
= –500 mA
pF
C
ISS
200
V
GS
= 0V,
Common Source Output
Capacitance
pF
pF
C
OSS
—
—
55
V
DS
= –25
V
,
f = 1 MHz
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
C
RSS
t
d(ON)
t
r
—
—
—
—
—
—
—
—
—
—
30
10
15
20
15
ns
ns
ns
ns
V
DD
= –25
V
,
I
D
= –1A,
R
GEN
= 25
ꢀ
Turn-off Delay Time
Fall Time
t
d(OFF)
t
f
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
V
SD
t
rr
—
—
—
–1.8
—
V
V
GS
= 0
V
,
I
SD
= –500 mA (
Note 1
)
V
GS
= 0
V
,
I
SD
= –500 mA (
Note 2
)
300
ns
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty
cycle.
2:
Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise specified, for all specifications T
A
=T
J
= +25°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
TEMPERATURE RANGE
Operating Ambient
T
e
mperature
Storage
T
e
mperature
T
A
T
S
–55°C
–55°C
—
—
+150
+150
°C
°C
PACKAGE THERMAL RESISTANCE
8-lead DFN
JA
JA
—
—
44
—
—
°C/W
Note 1
°C/W
Note 1
8-lead SOIC
101
Note 1:
1 oz., four-layer, 3” x 4” PCB
2017 Microchip Technology Inc.
DS20005697A-page 5
TC6320
2.0
PIN DESCRIPTION
T
a
ble 2-1
and
T
a
ble 2-2
show the description of pins in
TC6320 8-lead DFN and 8-lead SOIC, respectively.
Refer to
Package Types
for the location of pins.
TABLE 2-1:
Pin Number
8-LEAD DFN PIN FUNCTION TABLE
Pin Name
Description
1
2
3
4
5
6
7
8
SN
GN
GP
SP
DP
DP
DN
DN
Source N-channel
Gate N-channel
Gate P-channel
Source P-channel
Drain P-channel
Drain P-channel
Drain N-channel
Drain N-channel
TABLE 2-2:
Pin Number
8-LEAD SOIC FUNCTION TABLE
Pin Name
Description
1
2
3
4
5
6
7
8
SN
GN
SP
GP
DP
DP
DN
DN
Source N-channel
Gate N-channel
Source P-channel
Gate P-channel
Drain P-channel
Drain P-channel
Drain N-channel
Drain N-channel
DS20005697A-page 6
2017 Microchip Technology Inc.
TC6320
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1
and
Figure 3-2
illustrate the switching
waveforms and test circuits for TC6320.
10V
90%
V
DD
Input
R
L
10%
0V
Pulse
OUTPUT
Generator
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
R
GEN
t
r
t
f
D
.
U.T
VDD
Output
10%
90%
10%
90%
Input
0V
FIGURE 3-1:
N-Channel Switching Waveforms and Test Circuit.
0V
10%
Pulse
Generator
Input
90%
R
GEN
-10V
D
.
U.T
t
(ON)
t
d(ON)
t
(OFF)
Input
t
r
t
f
t
d(OFF)
90%
10%
OUTPUT
R
L
0V
Output
VDD
90%
10%
V
DD
FIGURE 3-2:
P-Channel Switching Waveforms and
T
e
st Circuit.
PRODUCT SUMMARY
R
DS(ON)
(Maximum)
(
Ω
)
BV
DSS
/BV
DGS
(V)
N-Channel
P-Channel
N-Channel
P-Channel
200
–200
7
8
2017 Microchip Technology Inc.
DS20005697A-page 7
TC6320
4.0
4.1
PACKAGING INFORMATION
Package Marking Information
Example
8-lead DFN
TC6320
XXXXXXX
XXXXXXX
K6
e3
e3
1715
YYWW
222
NNN
Example
8-lead SOIC
TC6320TG
XXXXXXX
e3
e3
1727
YYWW
NNN
555
Legend:
XX…X Product
Code or Customer-specific information
Y
Y
e
ar code (last digit of calendar year)
YY
WW
NNN
Y
e
ar code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC
®
designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
)
e
3
*
e
3
can be found on the outer packaging for this package.
Note
: In
the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
DS20005697A-page 8
2017 Microchip Technology Inc.
TC6320
2017 Microchip Technology Inc.
DS20005697A-page 9
TC6320
DS20005697A-page 10
2017 Microchip Technology Inc.
TC6320
APPENDIX A:
REVISION HISTORY
Revision A (October 2017)
• Converted
Supertex Doc# DSFP-TC6320 to
Microchip DS20005697A
• Changed
the package marking format
• Changed
the quantity of the
8-lead DFN K6 package from 3000/Reel
to 3300/Reel
• Changed
the quantity of the 8-lead SOIC TG
package from 2000/Reel to 3300/Reel
• Made
minor text changes throughout the docu-
ment
2017 Microchip Technology Inc.
DS20005697A-page 11
TC6320
PRODUCT IDENTIFICATION SYSTEM
To
o
rder or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office
.
Examples:
XX
PART NO.
Device
–
X
–
X
Package
Options
Environmental
Media Type
a) TC6320K6-G
:
b) TC6320TG-G
:
N-Channel and P-Channel
Enhancement-ModeMOSFETPair
,
8
‐
lead (4×4) VDFN, 3300/Reel
Device:
TC6320
=
N-Channel and P-Channel Enhancement-
Mode MOSFET Pair
N-Channel and P-Channel
Enhancement-Mod
e
M
OSFETPair,
8-lead SOIC, 3300/Reel
Packages:
K6
=
=
8-lead (4×4) VDFN
8-lead SOIC
TG
Environmental:
Media Type:
G
=
Lead (Pb)-free/RoHS-compliant Package
(blank)
=
=
3300/Reel for a K6 Package
3300/Reel for a TG Package
DS20005697A-page 12
2017 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALIT
Y
,
P
ERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE
.
Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,
CryptoR
F
,
d
sPIC, FlashFlex, flexPWR, Heldo, JukeBlox, K
EE
L
OQ
,
K
EE
L
OQ
logo, Kleer, LANCheck, LINK MD, maXStylus,
maX
T
o
uch, MediaLB, megaAVR, MOS
T
,
M
OST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTAR
T
,
P
IC32 logo, Prochip
Designer, Q
T
o
uch, Right
T
o
uch, SAM-BA, SpyNIC, SS
T
,
S
ST
Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip
T
e
chnology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
m
T
o
uch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip
T
e
chnology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, chipKI
T
,
c
hipKIT logo,
CodeGuard, CryptoAuthentication, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICS
P
,
I
nter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MP
F
,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PureSilicon, QMatrix, Right
T
o
uch logo, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II,
T
o
tal Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip
T
e
chnology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip
T
e
chnology Incorporated in
the U.S.A.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC
®
MCUs and dsPIC
®
DSCs, K
EE
L
OQ
®
code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
Silicon Storage
T
e
chnology is a registered trademark of Microchip
T
e
chnology Inc. in other countries.
GestIC is a registered trademark of Microchip
T
e
chnology
Germany II GmbH & Co. K
G
, a
s
ubsidiary of Microchip
T
e
chnology
Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
QUALITY
ꢀ
MANAGEMENT
ꢀꢀ
SYSTEM
ꢀ
CERTIFIED
ꢀ
BY
ꢀ
DNV
ꢀ
© 2017, Microchip
T
e
chnology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-2207-5
==
ISO/TS
ꢀ
16949
ꢀ
==
ꢀ
2017 Microchip Technology Inc.
DS20005697A-page 13
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e
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e
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e
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T
e
l: 86-28-8665-5511
Fax: 86-28-8665-7889
Germany – Garching
T
e
l: 49-8931-9700
Germany – Haan
Austin, TX
T
e
l: 512-257-3370
Japan – Osaka
T
e
l: 81-6-6152-7160
Fax: 81-6-6152-9310
Boston
T
e
l: 49-2129-3766400
China – Chongqing
T
e
l: 86-23-8980-9588
Fax: 86-23-8980-9500
Westborough, MA
T
e
l: 774-760-0087
Fax: 774-760-0088
Japan – Tokyo
T
e
l: 81-3-6880- 3770
Fax: 81-3-6880-3771
Germany – Heilbronn
T
e
l: 49-7131-67-3636
China – Dongguan
T
e
l: 86-769-8702-9880
Germany – Karlsruhe
T
e
l: 49-721-625370
Chicago
Itasca, IL
T
e
l: 630-285-0071
Fax: 630-285-0075
Korea – Daegu
T
e
l: 82-53-744-4301
Fax: 82-53-744-4302
China – Guangzhou
T
e
l: 86-20-8755-8029
Germany – Munich
T
e
l: 49-89-627-144-0
Fax: 49-89-627-144-44
China – Hangzhou
T
e
l: 86-571-8792-8115
Fax: 86-571-8792-8116
Korea – Seoul
Dallas
Addison, TX
T
e
l: 972-818-7423
Fax: 972-818-2924
T
e
l: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Germany – Rosenheim
T
e
l: 49-8031-354-560
China – Hong Kong SAR
T
e
l: 852-2943-5100
Fax: 852-2401-3431
Israel – Ra’anana
T
e
l: 972-9-744-7705
Malaysia – Kuala Lumpur
T
e
l: 60-3-6201-9857
Fax: 60-3-6201-9859
Detroit
Novi, MI
T
e
l: 248-848-4000
Italy – Milan
T
e
l: 39-0331-742611
Fax: 39-0331-466781
China – Nanjing
T
e
l: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia – Penang
T
e
l: 60-4-227-8870
Fax: 60-4-227-4068
Houston, TX
T
e
l: 281-894-5983
Italy – Padova
T
e
l: 39-049-7625286
China – Qingdao
T
e
l: 86-532-8502-7355
Fax: 86-532-8502-7205
Indianapolis
Noblesville, IN
T
e
l: 317-773-8323
Fax: 317-773-5453
T
e
l: 317-536-2380
Philippines – Manila
T
e
l: 63-2-634-9065
Fax: 63-2-634-9069
Netherlands – Drunen
T
e
l: 31-416-690399
Fax: 31-416-690340
China – Shanghai
T
e
l: 86-21-3326-8000
Fax: 86-21-3326-8021
Singapore
T
e
l: 65-6334-8870
Fax: 65-6334-8850
Norway – Trondheim
T
e
l: 47-7289-7561
Los Angeles
China – Shenyang
T
e
l: 86-24-2334-2829
Fax: 86-24-2334-2393
Mission Viejo, CA
T
e
l: 949-462-9523
Fax: 949-462-9608
T
e
l: 951-273-7800
Poland – Warsaw
T
e
l: 48-22-3325737
Taiwan – Hsin Chu
T
e
l: 886-3-5778-366
Fax: 886-3-5770-955
Romania – Bucharest
T
e
l: 40-21-407-87-50
China – Shenzhen
T
e
l: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan – Kaohsiung
T
e
l: 886-7-213-7830
Raleigh, NC
T
e
l: 919-844-7510
Spain – Madrid
T
e
l: 34-91-708-08-90
Fax: 34-91-708-08-91
China – Wuhan
T
e
l: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan – Taipei
T
e
l: 886-2-2508-8600
Fax: 886-2-2508-0102
New York, NY
T
e
l: 631-435-6000
Sweden – Gothenberg
T
e
l: 46-31-704-60-40
San Jose, CA
T
e
l: 408-735-9110
T
e
l: 408-436-4270
China – Xian
T
e
l: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand – Bangkok
T
e
l: 66-2-694-1351
Fax: 66-2-694-1350
Sweden – Stockholm
T
e
l: 46-8-5090-4654
Canada – Toronto
T
e
l: 905-695-1980
Fax: 905-695-2078
UK – Wokingham
T
e
l: 44-118-921-5800
Fax: 44-118-921-5820
DS20005697A-page 14
2017 Microchip Technology Inc.
11/07/16
