Microchip-Tech-TN2510N8-G
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TN2510
N-Channel Enhancement-Mode Vertical DMOS FET
Features
General Description
• 2V
Maximum Low Threshold
• High
Input Impedance
The TN2510 low-threshold Enhancement-mode
(normally-off) transistor uses a vertical DMOS structure
and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
• 125
pF Maximum Low Input Capacitance
• Fast
Switching Speeds
• Low
On-Resistance
• Free
from Secondary Breakdown
• Low
Input and Output Leakage
Applications
Microchip’s vertical DMOS FE
T
s
a
re ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
• Logic-Level
Interfaces (Ideal for TTL and CMOS)
• Solid-State
Relays
• Battery-Operated
Systems
• Photovoltaic
Drives
• Analog
Switches
• General
Purpose Line Drivers
•
T
e
lecommunication
Switches
Package Type
3-lead SOT-89
(
T
o
p view)
DRAIN
SOURCE
DRAIN
GATE
See
T
a
ble 3-1
for pin information.
2020 Microchip Technology Inc.
DS20005950A-page 1
TN2510
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage …………………………………………………………………………………………………………………….. BV
DSS
Drain-to-Gate Voltage
……………………………………………………………………………………………………………………….. BV
DGS
Gate-to-Source Voltage ……………………………………………………………………………………………………………………….. ±20V
Operating Ambient
T
e
mperature, T
A
……………………………………………………………………………………… –55°C to +150°C
Storage
T
e
mperature, T
S
……………………………………………………………………………………………………… –55°C to +150°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
T
A
= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle
Parameter
Sym.
Min. Typ. Max.
Unit
Conditions
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
100
0.6
—
—
—
2
V
V
V
GS
= 0
V
,
I
D
= 2 mA
V
GS
= V
DS
, I
D
= 1 mA
V
GS
= V
DS
, I
D
= 1 mA
(
Note 1
)
Change in V
GS(th)
with
T
e
mperature
Gate Body Leakage Current
ΔV
GS(th)
I
GSS
—
—
—
—
—
—
–4.5 mV/°C
100
10
nA
µA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0
V
,
V
DS
= Maximum
rating
Zero-Gate Voltage Drain Current
On-State Drain Current
I
DSS
V
DS
= 0.8 Maximum rating,
V
GS
= 0
V
,
T
A
= 125°C
(
Note 1
)
—
—
1
mA
1.2
3
2
6
—
—
15
2
A
A
Ω
Ω
Ω
V
GS
= 5
V
,
V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3
V
,
I
D
= 250 mA
V
GS
= 4.5
V
,
I
D
= 750 mA
V
GS
= 10V, I
D
= 750 mA
I
D(ON)
—
—
—
—
1.5
1
Static Drain-to-Source On-State Resistance
Change in R
DS(ON)
with
T
e
mperature
R
DS(ON)
1.5
V
GS
= 10V, I
D
= 750 mA
(
Note 1
)
ΔR
DS(ON)
—
—
0.75 %/°C
Note 1:
Specification is obtained by characterization and is not 100% tested.
DS20005950A-page 2
2020 Microchip Technology Inc.
TN2510
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
T
A
= 25°C unless otherwise specified. All AC parameters are not 100% sample tested.
Parameter
Sym. Min. Typ. Max. Unit
Conditions
Forward Transconductance
Input Capacitance
G
FS
400 800
—
125
70
25
10
10
20
10
mmho V
DS
= 25
V
,
I
D
= 1A
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
—
—
—
—
—
—
—
70
30
15
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
,
Common-Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
V
DS
= 25
V
,
f = 1 MHz
V
DD
= 25V,
I
D
= 1.5A,
GEN
= 25Ω
Rise Time
Turn-Off Delay Time
t
d(OFF)
t
f
R
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
V
SD
t
rr
—
—
—
1.8
—
V
V
GS
= 0
V
,
I
SD
= 1.5A (
Note 1
)
300
ns
V
GS
= 0
V
,
I
SD
= 1.5A
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated.
Pulse test: 300 µs pulse, 2% duty cycle
TEMPERATURE SPECIFICATIONS
Parameter
Sym. Min. Typ.
Max. Unit
Conditions
TEMPERATURE RANGE
Operating Ambient
T
e
mperature
Storage
T
e
mperature
T
A
T
S
–55
–55
—
—
+150
+150
°C
°C
PACKAGE THERMAL RESISTANCE
3-lead SOT-89
JA
—
73
—
°C/W
THERMAL CHARACTERISTICS
Power Dissipation
at T
A
= 25°C
(
Note 2
)
I
D
(
Note 1
)
(Continuous) (Pulsed)
I
D
I
DR
(
Note 1
) I
DRM
Package
(mA)
(A)
(mA)
(A)
(W)
3-lead SOT-89
730
5
1.6
730
5
Note 1:
I
D
(continuous) is limited by maximum rated T
J
.
2:
T
A
= 25°C. Mounted on an FR5 Board, 25 mm x 25 mm x 1.57 mm.
2020 Microchip Technology Inc.
DS20005950A-page 3
TN2510
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
10
10
8.0
6.0
4.0
2.0
0
8.0
6.0
4.0
2.0
0
V
GS
= 10V
8V
V
GS
= 10V
8V
6V
6V
4V
3V
4V
3V
0
2
4
6
8
10
0
10
20
30
40
50
V
DS
(volts)
V
DS
(volts)
FIGURE 2-1:
Outpu
t
C
haracteristics.
FIGURE 2-4:
Saturation Characteristics.
2.0
2.0
V
DS
= 25V
TO-243AA
1.6
1.2
0.8
0.4
T
A
= -55
O
C
T
A
= 25
O
C
1.0
T
A
= 125
O
C
0
0
0
0
1.0
2.0
3.0
4.0
5.0
25
50
75
100
125
150
I
D
(amperes)
T
A
(
O
C)
FIGURE 2-2:
Transconductance vs. Drain
FIGURE 2-5:
Power Dissipation vs.
Current.
Ambient
T
e
mperature.
10
1.0
0.8
0.6
0.4
0.2
0
TO-243AA (pulsed)
1.0
0.1
TO-243AA (DC)
0.01
TO-92
P
C
D
= 0.55W
T
= 25
O
C
T
C
= 25
O
C
0.001
0.001
0.01
0.1
1.0
10
0
10
100
1000
V
DS
(volts)
t
P
(seconds)
FIGURE 2-6:
Thermal Response
FIGURE 2-3:
Maximum Rated Safe
Characteristics.
Operating Area.
DS20005950A-page 4
2020 Microchip Technology Inc.
TN2510
10
8
1.1
1.0
0.9
V
GS
= 5.0V
6
V
GS
= 10V
4
2
0
-50
0
50
100
150
0
2
4
6
8
10
T
J
(
O
C)
I
D
(amperes)
FIGURE 2-7:
Temperature.
10
BV
DSS
Variation with
FIGURE 2-10:
Current.
On-Resistance vs. Drain
V
GS
= 25V
2.0
1.2
1.1
1.0
0.9
T
A
= -55
O
C
R
DS(ON)
@5.0V, 0.75A
8
6
4
2
0
1.6
1.2
25
O
C
125
O
C
V
(th)
@ 1.0mA
0.8
0.4
0.8
-50
0
2
4
6
8
10
0
50
100
150
V
GS
(volts)
T
J
(
O
C)
FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
V
(th)
and R
DS(ON)
with
Temperature.
100
10
f = 1MHz
V
DS
= 10V
8
6
4
2
75
50
25
C
ISS
V
DS
= 40V
190pF
C
OSS
70pF
0.5
C
RSS
0
0
0
0
1.0
1.5
2.0
2.5
10
20
30
40
Q
G
(nanocoulombs)
V
DS
(volts)
FIGURE 2-9:
Capacitance vs.
FIGURE 2-12:
Gate Drive Dynamic
Drain-to-Source Voltage.
Characteristics.
2020 Microchip Technology Inc.
DS20005950A-page 5
TN2510
3.0
PIN DESCRIPTION
T
a
ble 3-1
shows details on the pins of TN2510. Refer
to
Package Type
for the location of the pins.
TABLE 3-1:
Pin Number
PIN FUNCTION TABLE
Pin Name
Description
1
2,4
3
Gate
Drain
Gate
Drain
Source
Source
DS20005950A-page 6
2020 Microchip Technology Inc.
TN2510
4.0
FUNCTIONAL DESCRIPTION
Figure 4-1
illustrates the switching waveforms and test
circuit for TN2510.
10V
VDD
R
L
90%
INPUT
Pulse
10%
Generator
OUTPUT
0V
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
R
GEN
t
f
t
r
VDD
OUTPUT
0V
INPUT
D.U.
T
.
10%
10%
90%
90%
FIGURE 4-1:
Switching Waveforms and Test Circuit.
TABLE 4-1:
PRODUCT SUMMARY
R
DS(ON)
I
D(ON)
(Minimum)
(A)
V
GS(TH)
(Maximum)
(V)
BV
DSS
/BV
DGS
(V)
(Maximum)
(Ω)
100
1.5
3
2
2020 Microchip Technology Inc.
DS20005950A-page 7
TN2510
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
3-lead SOT-89
Example
XXXXYWW
TN5A036
NNN
587
Legend:
XX…X Product
Code or Customer-specific information
Y
Y
e
ar code (last digit of calendar year)
YY
WW
NNN
Y
e
ar code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC
®
designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e
3
*
)
3
e
Note
: In
the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
DS20005950A-page 8
2020 Microchip Technology Inc.
TN2510
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
H
E
E1
1
2
3
L
b
b1
A
e
e1
Top View
Side View
Symbol
A
1.40
–
b
0.44
–
b1
0.36
–
C
0.35
–
D
4.40
–
D1
1.62
–
E
2.29
–
E1
2.00
†
–
e
e1
H
3.94
–
L
0.73
†
–
MIN
NOM
MAX
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
†
This dimension differs from the JEDEC drawing
Drawings not to scale
.
2020 Microchip Technology Inc.
DS20005950A-page 9
TN2510
NOTES:
DS20005950A-page 10
2020 Microchip Technology Inc.
TN2510
APPENDIX A:
REVISION HISTORY
Revision A (November 2020)
• Converted
Supertex Doc# DSFP-TN2510 to
Microchip DS20005950A
• Changed
the package marking format
• Made
minor text changes throughout the
document
2020 Microchip Technology Inc.
DS20005950A-page 11
TN2510
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office
.
Example:
XX
PART NO.
Device
–
X
–
X
Package
Options
Environmental
Media Type
a) TN2510N8-G:
N-Channel Enhancement-
Mode, Vertical DMOS FE
T
,
3-lead SOT-89, 2000/Reel
Device:
TN2510
=
N-Channel Enhancement-Mode Vertical
DMOS FET
Package:
N8
=
=
=
3-lead SOT-89
Environmental:
Media Type:
G
Lead (Pb)-free/RoHS-compliant Package
2000/Reel for an N8 Package
(blank)
DS20005950A-page 12
2020 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
•
•
Microchip products meet the specifications contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is secure when used in the intended manner and under normal conditions.
There are dishonest and possibly illegal methods being used in attempts to breach the code protection features of the Microchip
devices. We believe that these methods
require using the Microchip products in a manner outside the operating specifications
contained in Microchip’s Data Sheets. Attempts to breach these code protection features, most likely, cannot be accomplished
without violating Microchip’s intellectual property rights.
•
•
Microchip is willing to work with any customer who is concerned about the integrity of its code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not
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Information contained in this publication is provided for the sole
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A
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R Freaks, BesTime, BitCloud, chipKI
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ISBN: 978-1-5224-7122-6
2020 Microchip Technology Inc.
DS20005950A-page 13
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T
e
l: 86-25-8473-2460
Malaysia – Penang
T
e
l: 60-4-227-8870
Germany – Karlsruhe
Tel: 49-721-625370
China – Qingdao
Philippines – Manila
Germany – Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
T
e
l: 86-532-8502-7355
T
e
l: 63-2-634-9065
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
China – Shanghai
T
e
l: 86-21-3326-8000
Singapore
T
e
l: 65-6334-8870
Germany – Rosenheim
Tel: 49-8031-354-560
China – Shenyang
T
e
l: 86-24-2334-2829
Taiwan – Hsin Chu
T
e
l: 886-3-577-8366
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Israel – Ra’anana
Tel: 972-9-744-7705
China – Shenzhen
T
e
l: 86-755-8864-2200
Taiwan – Kaohsiung
T
e
l: 886-7-213-7830
Italy – Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
China – Suzhou
T
e
l: 86-186-6233-1526
Taiwan – Taipei
T
e
l: 886-2-2508-8600
Detroit
Novi, MI
Tel: 248-848-4000
China – Wuhan
T
e
l: 86-27-5980-5300
Thailand – Bangkok
T
e
l: 66-2-694-1351
Italy – Padova
Tel: 39-049-7625286
Houston, TX
Tel: 281-894-5983
China – Xian
T
e
l: 86-29-8833-7252
Vietnam – Ho Chi Minh
T
e
l: 84-28-5448-2100
Netherlands – Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
China – Xiamen
T
e
l: 86-592-2388138
Norway – Trondheim
Tel: 47-7288-4388
China – Zhuhai
T
e
l: 86-756-3210040
Poland – Warsaw
Tel: 48-22-3325737
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Romania – Bucharest
Tel: 40-21-407-87-50
Spain – Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Raleigh, NC
Tel: 919-844-7510
Sweden – Gothenberg
Tel: 46-31-704-60-40
New York, NY
Tel: 631-435-6000
Sweden – Stockholm
Tel: 46-8-5090-4654
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
UK – Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Canada – Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005950A-page 14
2020 Microchip Technology Inc.
02/28/20
