Microchip-Tech-TP2104K1-G
| Part # | Microchip-Tech-TP2104K1-G |
Download  | Microchip-Tech-TP2104K1-G |
Supertex inc.
TP2104
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
►
High input impedance and high gain
►
Low power drive requirement
►
Ease of paralleling
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-
proven, silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
►
Low C
ISS
and fast switching speeds
►
Excellent thermal stability
►
Integral source-drain diode
►
Free from secondary breakdown
Applications
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
►
Logic level interfaces – ideal for TTL and CMOS
►
Solid state relays
►
Analog switches
►
Power management
►
T
e
lecom switches
Ordering Information
Product Summary
R
DS(ON)
Part Number
Package Option
Packing
V
GS(th)
(max)
BV
DSS
/BV
DGS
(max)
TP2104K1-G
TO-236AB (SOT-23)
3000/Reel
-40V
6.0
Ω
-2.0V
TP2104N3-G
3-Lead TO-92
1000/Bag
2000/Reel
TP2104N3-G P002
TP2104N3-G P003
Pin Configuration
DRAIN
TP2104N3-G P005
3-Lead TO-92
TP2104N3-G P013
TP2104N3-G P014
DRAIN
SOURCE
GATE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
SOURCE
GATE
TO-236AB (SOT-23)
TO-92
Absolute Maximum Ratings
Parameter
Value
BV
DSS
BV
DGS
±20V
Product Marking
Drain-to-source voltage
Drain-to-gate voltage
W = Code for week sealed
= “Green” Packaging
P1LW
Gate-to-source voltage
Package may or may not include the following marks: Si or
Operating and storage temperature
-55
O
C to +150
O
C
TO-236AB (SOT-23)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
SiTP
2 1 0 4
YYWW
YY = Year Sealed
WW = Week Sealed
Typical Thermal Resistance
= “Green” Packaging
Package
θ
ja
Package may or may not include the following marks: Si or
203
O
C/W
132
O
C/W
TO-92
TO-236AB (SOT-23)
TO-92
Doc.# DSFP-TP2104
B081313
Supertex inc.
TP2104
Thermal Characteristics
I
D
I
D
Power Dissipation
†
Package
I
DR
I
DRM
(continuous)
†
(pulsed)
@T
A
= 25
O
C
TO-236AB (SOT-23)
TO-92
-160mA
-175mA
-800mA
-1.0A
0.36W
0.74W
-160mA
-175mA
-800mA
-1.0A
†
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Sym
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
Parameter
Min
-40
-1.0
–
Typ
Max
–
Units
Conditions
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
–
–
V
V
V
GS
= 0
V
,
I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
-2.0
6.5
-100
-10
5.8
-1.0
–
mV/
O
C V
GS
= V
DS
, I
D
= -1.0mA
–
nA
V
GS
= ± 20
V
,
V
DS
= 0V
μA
V
GS
= 0
V
,
V
DS
= Max Rating
I
DSS
Zero gate voltage drain current
On-state drain current
–
V
DS
= 0.8 Max Rating,
V
GS
= 0
V
, T
A
= 125°C
–
-1.0
mA
A
I
D(ON)
-0.6
–
–
–
V
GS
= -10
V
,
V
DS
= -25V
V
GS
= -4.5
V
,
I
D
= -50mA
V
GS
= -10
V
,
I
D
= -500mA
V
GS
= -10
V
,
I
D
= -500mA
V
DS
= -25
V
,
I
D
= -500mA
–
10
6.0
1.0
–
Static drain-to-source on-state
resistance
R
DS(ON)
Ω
–
∆R
DS(ON)
Change in R
DS(ON)
with temperature
–
0.55
200
35
%/
O
C
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
Forward transconductance
Input capacitance
150
mmho
–
–
–
–
–
–
–
–
–
60
30
10
6.0
8.0
9.0
8.0
-2.0
–
V
GS
= 0
V
,
V
DS
= -25
V
,
f = 1.0 MHz
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
22
pF
ns
8.0
4.0
4.0
5.0
5.0
-1.2
400
V
DD
= -25
V
,
I
D
= -500mA,
R
GEN
= 25Ω
Rise time
t
d(OFF)
t
f
Turn-off delay time
Fall time
V
SD
t
rr
Diode forward voltage drop
Reverse recovery time
V
V
GS
= 0
V
,
I
SD
= -500mA
V
GS
= 0
V
,
I
SD
= -500mA
ns
Notes:
1. All
D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All
A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
Pulse
10%
Generator
INPUT
R
GEN
90%
t
(OFF)
-10V
t
(ON)
t
d(ON)
D.U.
T
.
t
r
t
d(OFF)
t
f
INPUT
OUTPUT
0V
R
L
90%
90%
OUTPUT
VDD
10%
10%
VDD
Doc.# DSFP-TP2104
B081313
Supertex inc.
2
TP2104
Typical Performance Curves
BV
DSS
Variation with Temperature
On-Resistance vs. Drain Current
1.1
20
16
12
8.0
4.0
0
V
GS
= -4.5V
1.0
V
GS
= -10V
0.9
-50
0
50
100
150
0
-0.4
-0.6
-0.8
-1.2
-2.0
T
j
(
O
C)
I
D
(amperes)
V
GS(th)
and R
DS(ON)
Variation with Temperature
Transfer Characteristics
V
DS
= -25
O
C
1.2
-2.0
1.6
R
DS(ON)
@ -10V, -0.5A
1.1
-1.6
-1.2
-0.8
-0.4
0
T
A
= -55
O
C
1.4
1.0
V
GS(th)
@ -1.0mA
1.2
25
O
C
0.9
1.0
0.8
0.8
0.7
125
O
C
0
-2.0
-4.0
-6.0
-8.0
10
-50
0
50
100
150
V
GS
(volts)
T
j
(
O
C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
-10
100
V
DS
= -10V
f = 1.0MHz
-8.0
-6.0
-4.0
-2.0
0
75
V
DS
= -40V
125 pF
50
C
ISS
25
C
OSS
C
RSS
35 pF
0.5
0
0
-10
-20
-30
-40
0
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
Doc.# DSFP-TP2104
B081313
Supertex inc.
3
TP2104
Typical Performance Curves
(cont.)
Output Characteristics
Saturation Characteristics
-2.0
-2.0
-1.6
-1.2
-0.8
-0.4
0
V
GS
= -10V
-1.6
-8V
-1.2
V
GS
= -10V
-8V
-0.8
-6V
-6V
-4V
-0.4
-4V
-3V
-3V
0
0
-10
-20
-30
-40
-50
0
-2.0
-4.0
-6.0
-8.0
-10
V
DS
(volts)
V
DS
(volts)
Transconductance vs. Drain Current
Power Dissipation vs. Temperature
1.0
0.8
0.6
0.4
0.2
0
0.5
V
DS
= -25V
0.4
0.3
0.2
0.1
0
TO-92
T
A
= -55
O
C
25
O
C
SOT-23
125
O
C
0
25
50
75
100
125
150
0
-0.2
-0.4
-0.6
-0.8
-1.0
T
A
(
O
C)
I
D
(amperes)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
-1.0
-0.1
1.0
0.8
0.6
0.4
0.2
0
SOT-23 (pulsed)
SOT-23 (DC)
SOT-23
P
D
= 0.36W
T
A
= 25
O
C
-0.01
TO-92
P
D
= 1.0W
T
C
= 25
O
C
T
A
= 25
O
C
-0.001
-0.1
-1.0
-10
-100
0.001
0.01
0.1
1.0
10
t
P
(seconds)
V
DS
(volts)
Doc.# DSFP-TP2104
B081313
Supertex inc.
4
TP2104
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90×1.30mm body, 1.12mm height (max), 1.90mm pitch
D
3
E
E1
Gauge
Plane
0.25
Seating
Plane
L
L1
1
2
e
b
e1
View B
Top View
View B
A
A2
A
Seating
Plane
A1
View A – A
Side View
A
Symbol
A
A1
0.01
–
A2
b
D
E
2.10
–
E1
e
e1
L
L1
θ
0
O
–
MIN
NOM
MAX
0.89
–
0.88
0.95
1.02
0.30
–
2.80
2.90
3.04
1.20
1.30
1.40
0.20
†
0.50
0.60
Dimension
(mm)
0.95
BSC
1.90
BSC
0.54
REF
1.12
0.10
0.50
2.64
8
O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO236ABK1, Version C041309.
Doc.# DSFP-TP2104
B081313
Supertex inc.
5
TP2104
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E
E1
1
3
2
Bottom View
Symbol
A
.170
–
b
.014
†
–
c
D
.175
–
E
.125
–
E1
.080
–
e
e1
.045
–
L
.500
–
MIN
NOM
MAX
.014
†
–
.095
–
Dimensions
(inches)
.210
.022
†
.022
†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc
.
All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Doc.# DSFP-TP2104
B081313
T
e
l: 408-222-8888
6
