Microchip-Tech-TP2520N8-G
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TP2520
P-Channel Enhancement-Mode
V
e
rtical DMOS FET
Features
General Description
• –2.4V
Maximum Low Threshold
• High
Input Impedance
The TP2520 low-threshold, Enhancement-mode
(normally-off) transistor uses a vertical DMOS structure
and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
• 125
pF Maximum Low Input Capacitance
• Fast
Switching Speeds
• Low
On-Resistance
• Free
from Secondary Breakdown
• Low
Input and Output Leakage
Applications
Microchip’s vertical DMOS FE
T
s
a
re ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
• Logic-Level
Interfaces (Ideal for TTL and CMOS)
• Solid-State
Relays
• Battery-Operated
Systems
• Photovoltaic
Drives
• Analog
Switches
• General
Purpose Line Drivers
•
T
e
lecommunication
Switches
Package Type
3-lead SOT-89
(
T
op view)
DRAIN
SOURCE
DRAIN
GATE
See
T
a
ble 3-1
for pin information.
2020 Microchip Technology Inc.
DS20005966A-page 1
TP2520
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltag
e
.
…………………………………………………………………………………………………………………….. BV
DSS
Drain-to-Gate Voltage ………………………………………………………………………………………………………………………… BV
DGS
Gate-to-Source Voltage…………………………………………………………………………………………………………………………
±20V
Operating Ambient
T
e
mperature, T
A
………………………………………………………………………………………. –55°C to +150°C
Storage
T
e
mperature, T
S
………………………………………………………………………………………………………. –55°C to +150°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
T
A
= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
Parameter
Sym.
Min. Typ.
Max. Unit
Conditions
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
–200
–1
—
—
—
V
V
V
GS
= 0V, I
D
= –2 mA
V
GS
= V
DS
, I
D
= –1 mA
–2.4
V
GS
= V
DS
, I
D
= –1 mA
(
Note 1
)
Change in V
GS(th)
with
T
e
mperature
Gate Body Leakage Current
ΔV
GS(th)
I
GSS
—
—
—
—
—
—
4.5 mV/°C
–100
–10
nA
μA
V
GS
= ±20
V
,
V
DS
= 0V
V
GS
= 0V,
V
DS
= Maximum rating
V
DS
= 0.8 Maximum rating,
V
GS
= 0V, T
A
= 125°C
Zero-Gate Voltage Drain Current
On-State Drain Current
I
DSS
—
—
–1
mA
(
Note 1
)
–0.25 –0.7
–0.75 –2.1
—
—
15
12
A
A
Ω
Ω
V
GS
= –4.5V, V
DS
= –25V
V
GS
= –10
V
,
V
DS
= –25V
V
GS
= –4.5V, I
D
= –100 mA
V
GS
= –10
V
,
I
D
= –200 mA
I
D(ON)
—
—
10
8
Static Drain-to-Source On-State Resistance
Change in R
DS(ON)
with
T
e
mperature
R
DS(ON)
V
GS
= –10
V
,
I
D
= –200 mA
(
Note 1
)
ΔR
DS(ON)
—
—
1.7 %/°C
Note 1:
Specification is obtained by characterization and is not 100% tested.
DS20005966A-page 2
2020 Microchip Technology Inc.
TP2520
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
T
A
= 25°C unless otherwise specified. Specification is obtained by characterization and
is not 100% tested.
Parameter
Sym. Min. Typ. Max. Unit
Conditions
Forward Transconductance
Input Capacitance
G
FS
100 250
—
125
85
35
10
15
20
15
mmho V
DS
= –25V, I
D
= –200 mA
pF
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
—
—
—
—
—
—
—
75
20
10
—
—
—
—
V
GS
= 0
V
,
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
pF
pF
ns
ns
ns
ns
V
DS
= –25V,
f = 1 MHz
V
DD
= –25V,
I
D
= –750 mA,
GEN
= 25Ω
Rise Time
Turn-Off Delay Time
t
d(OFF)
t
f
R
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
V
SD
t
rr
—
—
—
–1.8
—
V
V
GS
= 0
V
,
I
SD
= –500 mA (
Note 1
)
300
ns
V
GS
= 0
V
,
I
SD
= –500 mA
Note 1:
Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty
cycle
TEMPERATURE SPECIFICATIONS
Parameter
Sym. Min. Typ.
Max. Unit
Conditions
TEMPERATURE RANGE
Operating Ambient
T
e
mperature
Storage
T
e
mperature
T
A
T
S
–55
–55
—
—
+150
+150
°C
°C
PACKAGE THERMAL RESISTANCE
3-lead SOT-89
JA
—
133
—
°C/W
THERMAL CHARACTERISTICS
Power Dissipation
at T
A
= 25°C
(
Note 2
)
I
D
(
Note 1
)
(Continuous) (Pulsed)
I
D
I
DR
(
Note 1
) I
DRM
Package
(mA)
(A)
(mA)
(A)
(W)
3-lead SOT-89
–260
–2
1.6
–260
–2
Note 1:
I
D
(continuous) is limited by maximum rated T
J
.
2:
Mounted on an FR5 board, 25 mm x 25 mm x 1.57 mm
2020 Microchip Technology Inc.
DS20005966A-page 3
TP2520
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
-2.5
-2.0
-1.6
-1.2
-0.8
-0.4
0
V
GS
= -10V
-2.0
-1.5
-1.0
-0.5
0
-8V
-6V
V
GS
= -10V
-8V
-6V
-4V
-3V
-4V
-3V
0
-10
-20
-30
-40
-50
0
-2.0
-4.0
-6.0
-8.0
-10
V
DS
(volts)
V
DS
(volts)
FIGURE 2-1:
Outpu
t
C
haracteristics.
FIGURE 2-4:
Saturation Characteristics.
1.0
2.0
V
DS
= -25V
TO-243AA
0.8
0.6
0.4
0.2
0
T
A
= -55
O
C
25
O
C
1.0
125
O
C
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
25
50
75
100
125
150
T
A
(
O
C)
I
D
(amperes)
FIGURE 2-2:
Transconductance vs. Drain
FIGURE 2-5:
Power Dissipation vs.
Current.
Ambient
T
e
mperature.
1.0
-10
T
A
= 25
O
C
0.8
0.6
0.4
0.2
0
TO-243AA (pulsed)
-1.0
-0.1
TO-243AA (DC)
TO-243AA
T =
25
O
C
P
A
D
= 1.6W
-0.01
0.001
0.01
0.1
1.0
10
-1.0
-10
-1000
V
DS
(volts)
-100
t
p
(seconds)
FIGURE 2-6:
Thermal Response
FIGURE 2-3:
Maximum Rated Safe
Characteristics.
Operating Area.
DS20005966A-page 4
2020 Microchip Technology Inc.
TP2520
50
40
30
20
10
0
1.1
1.0
0.9
V
GS
= -4.5V
V
GS
= -10V
-50
0
50
100
150
0
-0.5
-1.0
-1.5
-2.0
-2.5
T
j
(
O
C)
I
D
(amperes)
FIGURE 2-7:
Temperature.
-2.5
BV
DSS
Variation with
FIGURE 2-10:
Current.
On-Resistance vs. Drain
2.5
V
DS
= -25V
1.2
1.1
-2.0
-1.5
-1.0
-0.5
2.0
T
A
= -55
O
C
25
O
C
R
DS(ON)
@ -10V, -0.2A
1.5
1.0
0.5
0
1.0
0.9
0.8
V
(th)
@ -1mA
125
O
C
0
0
-2.0
-4.0
-6.0
-8.0
-10
-50
0
50
100
150
T
j
(
O
C)
V
GS
(volts)
FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
V
GS(th)
and R
DS
Variation
with Temperature.
200
-10
f = 1MHz
V
DS
= -10
-8.0
-6.0
-4.0
150
100
50
V
DS
= -40
200pF
C
ISS
-2.0
C
RSS
C
OSS
73pF
0
0
0
-10
-20
-30
-40
0
0.5
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
FIGURE 2-9:
Capacitance vs.
FIGURE 2-12:
Gate Drive Dynamic
Drain-to-Source Voltage.
Characteristics.
2020 Microchip Technology Inc.
DS20005966A-page 5
TP2520
3.0
PIN DESCRIPTION
The details on the pins of TP2520 are listed in
T
a
ble 3-1
. Refer to
Package Type
for the location of
pins.
TABLE 3-1:
Pin Number
PIN FUNCTION TABLE
Pin Name
Description
1
2,4
3
Gate
Drain
Gate
Drain
Source
Source
DS20005966A-page 6
2020 Microchip Technology Inc.
TP2520
4.0
FUNCTIONAL DESCRIPTION
Figure 4-1
illustrates the switching waveforms and test
circuit for TP2520.
0V
Pulse
10%
Generator
INPUT
R
GEN
90%
t
(OFF)
-10V
t
(ON)
t
d(ON)
D.U.
T
.
t
r
t
d(OFF)
t
f
INPUT
OUTPUT
0V
R
L
90%
90%
OUTPUT
VDD
10%
10%
VDD
FIGURE 4-1:
Switching Waveforms and Test Circuit.
TABLE 4-1:
PRODUCT SUMMARY
R
DS(ON)
V
GS(TH)
(Maximum)
(V)
I
D(ON)
(Minimum)
(mA)
BV
DSS
/BV
DGS
(V)
(Maximum)
(Ω)
–200
12
–2.4
–750
2020 Microchip Technology Inc.
DS20005966A-page 7
TP2520
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
Example
3-lead SOT-89
TP5C023
245
XXXXYWW
NNN
Legend:
XX…X Product
Code or Customer-specific information
Y
Y
e
ar code (last digit of calendar year)
YY
WW
NNN
Y
e
ar code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC
®
designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e
3
*
)
3
e
Note
: In
the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
DS20005966A-page 8
2020 Microchip Technology Inc.
TP2520
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
H
E
E1
1
2
3
L
b
b1
A
e
e1
Top View
Side View
Symbol
A
1.40
–
b
0.44
–
b1
0.36
–
C
0.35
–
D
4.40
–
D1
1.62
–
E
2.29
–
E1
2.00
†
–
e
e1
H
3.94
–
L
0.73
†
–
MIN
NOM
MAX
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
†
This dimension differs from the JEDEC drawing
Drawings not to scale
.
2020 Microchip Technology Inc.
DS20005966A-page 9
TP2520
NOTES:
DS20005966A-page 10
2020 Microchip Technology Inc.
TP2520
APPENDIX A:
REVISION HISTORY
Revision A (June 2020)
• Converted
DSFP-TP2520 to Microchip
DS20005966A
• Added
a pin function table
• Changed
the package marking format
• Made
minor text changes throughout the
document
2020 Microchip Technology Inc.
DS20005966A-page 11
TP2520
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office
.
Example:
XX
PART NO.
Device
–
X
–
X
Package
Options
Environmental
Media Type
a) TP2520N8-G:
P-Channel Enhancement-
Mode, Vertical DMOS FE
T
,
3-lead SOT-89, 2000/Reel
Device:
TP2520
=
P-Channel Enhancement-Mode Vertical
DMOS FET
Package:
N8
=
=
=
3-lead SOT-89
Environmental:
Media Type:
G
Lead (Pb)-free/RoHS-compliant Package
2000/Reel for an N8 Package
(blank)
DS20005966A-page 12
2020 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORM
A
T
ION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALIT
Y
,
P
ERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE
.
Microchip disclaims all liability
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Trademarks
The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo,
A
V
R Freaks, BesTime, BitCloud, chipKI
T
,
chipKIT logo, CryptoMemory, CryptoR
F
, dsPIC, FlashFlex,
flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck,
LinkMD, maXStylus, maX
T
o
uch, MediaLB, mega
A
V
R, Microsemi,
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T
,
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OST logo, MPLAB, OptoLyzer,
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T
,
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IC32 logo, PolarFire,
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ouch, SAM-BA, SenGenuity, SpyNIC, SS
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,
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a
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e
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T
e
chnology Incorporated in
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,
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lockWorks, The Embedded Control Solutions Compan
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,
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e
c, Hyper Speed Control, HyperLight Load,
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e
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e
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e
chnology, and Symmcom are registered trademarks of Microchip
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e
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e
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e
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All other trademarks mentioned herein are property of their
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© 2020, Microchip
T
e
chnology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-6245-3
2020 Microchip Technology Inc.
DS20005966A-page 13
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l: 86-24-2334-2829
Taiwan – Hsin Chu
T
e
l: 886-3-577-8366
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Israel – Ra’anana
Tel: 972-9-744-7705
China – Shenzhen
T
e
l: 86-755-8864-2200
Taiwan – Kaohsiung
T
e
l: 886-7-213-7830
Italy – Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
China – Suzhou
T
e
l: 86-186-6233-1526
Taiwan – Taipei
T
e
l: 886-2-2508-8600
Detroit
Novi, MI
Tel: 248-848-4000
China – Wuhan
T
e
l: 86-27-5980-5300
Thailand – Bangkok
T
e
l: 66-2-694-1351
Italy – Padova
Tel: 39-049-7625286
Houston, TX
Tel: 281-894-5983
China – Xian
T
e
l: 86-29-8833-7252
Vietnam – Ho Chi Minh
T
e
l: 84-28-5448-2100
Netherlands – Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
China – Xiamen
T
e
l: 86-592-2388138
Norway – Trondheim
Tel: 47-7288-4388
China – Zhuhai
T
e
l: 86-756-3210040
Poland – Warsaw
Tel: 48-22-3325737
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Romania – Bucharest
Tel: 40-21-407-87-50
Spain – Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Raleigh, NC
Tel: 919-844-7510
Sweden – Gothenberg
Tel: 46-31-704-60-40
New York, NY
Tel: 631-435-6000
Sweden – Stockholm
Tel: 46-8-5090-4654
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
UK – Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Canada – Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005966A-page 14
2020 Microchip Technology Inc.
02/28/20
