Microchip-Tech-VN0808L-G

Part #Microchip-Tech-VN0808L-G
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Microchip-Tech-VN0808L-G
VN0808  
Supertex inc.  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
►
Free from secondary breakdown  
►
Low power drive requirement  
►
Ease of paralleling  
This enhancement-mode (normally-off) transistor utilizes  
a vertical DMOS structure and Supertex’s well-proven,  
silicon-gate manufacturing process. This combination  
produces a device with the power handling capabilities  
of bipolar transistors and the high input impedance and  
positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally-induced secondary  
breakdown.  
►
Low C

ISS

and fast switching speeds  
►
Excellent thermal stability  
►
Integral source-drain diode  
►
High input impedance and high gain  
Applications  
►
Motor controls  
►
Converters  
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
►
Amplifiers  
►
Switches  
►
Power supply circuits  
►
Drivers (relays, hammers, solenoids, lamps, memories,  
displays, bipolar transistors, etc.)  
Ordering Information  
Product Summary  
R

DS(ON)  

(max)  
Part Number  
Package Option  
Packing  
I

DSS  

(min)  
BV

DSS

/BV

DGS  

VN0808L-G  
TO-92  
1000/Bag  
80V  
4.0
Ω  
1.5A  
VN0808L-G P002  
VN0808L-G P003  
VN0808L-G P005  
VN0808L-G P013  
VN0808L-G P014  
Pin Configuration  
TO-92  
2000/Reel  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
DRAIN  
SOURCE  
Absolute Maximum Ratings  
Parameter  
Value  
GATE  
TO-92  
Drain-to-source voltage  
Drain-to-gate voltage  
BV

DSS  

BV

DGS  

±30V  
Gate-to-source voltage  
Product Marking  
Operating and storage temperature  
-55

O

C to +150

O

C  
Si VN  
0 8 0 8 L  
YYWW  
YY = Year Sealed  
Absolute Maximum Ratings are those values beyond which damage to the device may  
occur. Functional operation under these conditions is not implied. Continuous operation  
of the device at the absolute rating level may affect device reliability. All voltages are  
referenced to device ground.  
WW = Week Sealed  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
Typical Thermal Resistance  
TO-92  
Package  
θ

ja  

TO-92  
132

O

C/W  
Doc.# DSFP-VN0808  
B081913  
Supertex inc.  

VN0808  
Thermal Characteristics  
I

D  

I

D  

Power Dissipation  
†
Package  
I

DR  

I

DRM  

@T

C

= 25

O

C  
(continuous)

†  

(pulsed)  
TO-92  
300mA  
1.9A  
1.0W  
300mA  
1.9A  
Notes:  
†
I

D

(continuous) is limited by max rated T

j

.  
Electrical Characteristics
(T

A

= 25

O

C unless otherwise specified)  
Sym  
BV

DSS  

V

GS(th)  

I

GSS  

Parameter  
Min  
80  
0.8  
–
Typ  
Max Units
 
Conditions  
Drain-to-source breakdown voltage  
Gate threshold voltage  
Gate body leakage  
–
–
–
–
–
V
V
V

GS

= 0
V
,
I

D

= 10µA  
2.0  
100  
10  
V

GS

= V

DS

, I

D

= 1.0mA  
V

GS

= ±15
V
,
V

DS

= 0V  
V

GS

= 0
V
,
V

DS

= 80V  
nA  
–
I

DSS  

Zero gate voltage drain current  
On-state drain current  
µA  
V

DS

= 0.8 Max Rating,  
–
–
500  
V

GS

= 0
V
, T

A

= 125°C  
V

GS

= 10
V
,
V

DS

= 10V  
V

GS

= 10
V
,
I

D

= 1.0A  
I

D(ON)  

1.5  
–
–
–
–
–
–
–
A
R

DS(ON)

Static drain-to-source on-state resistance  
–
4.0  
–
Ω
G

FS  

C

ISS  

C

OSS  

C

RSS  

Forward transductance  
170  
mmho V

DS

= 10
V
,
I

D

= 500mA  
Input capacitance  
–
–
–
50  
40  
10  
V

GS

= 0
V
,  
V

DS

= 25
V
,  
f = 1.0MHz  
Common source output capacitance  
Reverse transfer capacitance  
pF  
V

DD

= 25
V
,  
I

D

= 1.0A,  
R

GEN

= 25Ω  
t

(ON)  

Turn-on delay time  
–
–
10  
ns  
V
t

(OFF)  

V

SD  

Turn-off delay time  
–
–
–
10  
–
Diode forward voltage drop  
0.85  
V

GS

= 0
V
,
I

SD

= 350mA  
Notes:  
1. All
 
D.C. parameters 100% tested at 25

O

C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All
 
A.C. parameters sample tested.  
Switching Waveforms and Test Circuit  
10V  
VDD  
90%  
INPUT  
0V  
Pulse  
R

L  

10%  
Generator  
OUTPUT  
t

(ON)  

t

d(ON)  

t

(OFF)  

t

d(OFF)  

R

GEN  

t

f  

t

r  

VDD  
OUTPUT  
0V  
INPUT  
D.U.
T
.  
10%  
10%  
90%  
90%  
Doc.# DSFP-VN0808  
B081913  
Supertex inc.  
2

VN0808  
3-Lead TO-92 Package Outline (L)  
D
A
Seating  
Plane  
1
2
3
L
c
b
e1  
e
Side View  
Front View  
E
E1  
1
3
2
Bottom View  
Symbol  
A
.170  
–
b
.014

†  

–
c
D
.175  
–
E
.125  
–
E1  
.080  
–
e
e1  
.045  
–
L
.500  
–
MIN  
NOM  
MAX  
.014

†  

–
.095  
–
Dimensions  
(inches)  
.210  
.022

†  

.022

†  

.205  
.165  
.105  
.105  
.055  
.610*  
JEDEC Registration TO-92.  
* This dimension is not specified in the JEDEC drawing.  
† This dimension differs from the JEDEC drawing.  
Drawings not to scale.  
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.  
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives  
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability  
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and  
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)  
©2013
Supertex inc
.
All rights reserved. Unauthorized use or reproduction is prohibited.  
Supertex inc.  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
T
e
l: 408-222-8888  
Doc.# DSFP-VN0808  
B081913  
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