Microchip-Tech-VN0808L-G
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VN0808
Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
►
Free from secondary breakdown
►
Low power drive requirement
►
Ease of paralleling
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
►
Low C
ISS
and fast switching speeds
►
Excellent thermal stability
►
Integral source-drain diode
►
High input impedance and high gain
Applications
►
Motor controls
►
Converters
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
►
Amplifiers
►
Switches
►
Power supply circuits
►
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Ordering Information
Product Summary
R
DS(ON)
(max)
Part Number
Package Option
Packing
I
DSS
(min)
BV
DSS
/BV
DGS
VN0808L-G
TO-92
1000/Bag
80V
4.0
Ω
1.5A
VN0808L-G P002
VN0808L-G P003
VN0808L-G P005
VN0808L-G P013
VN0808L-G P014
Pin Configuration
TO-92
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Value
GATE
TO-92
Drain-to-source voltage
Drain-to-gate voltage
BV
DSS
BV
DGS
±30V
Gate-to-source voltage
Product Marking
Operating and storage temperature
-55
O
C to +150
O
C
Si VN
0 8 0 8 L
YYWW
YY = Year Sealed
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Typical Thermal Resistance
TO-92
Package
θ
ja
TO-92
132
O
C/W
Doc.# DSFP-VN0808
B081913
Supertex inc.
VN0808
Thermal Characteristics
I
D
I
D
Power Dissipation
†
Package
I
DR
I
DRM
@T
C
= 25
O
C
(continuous)
†
(pulsed)
TO-92
300mA
1.9A
1.0W
300mA
1.9A
Notes:
†
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
A
= 25
O
C unless otherwise specified)
Sym
BV
DSS
V
GS(th)
I
GSS
Parameter
Min
80
0.8
–
Typ
Max Units
Conditions
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage
–
–
–
–
–
V
V
V
GS
= 0
V
,
I
D
= 10µA
2.0
100
10
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±15
V
,
V
DS
= 0V
V
GS
= 0
V
,
V
DS
= 80V
nA
–
I
DSS
Zero gate voltage drain current
On-state drain current
µA
V
DS
= 0.8 Max Rating,
–
–
500
V
GS
= 0
V
, T
A
= 125°C
V
GS
= 10
V
,
V
DS
= 10V
V
GS
= 10
V
,
I
D
= 1.0A
I
D(ON)
1.5
–
–
–
–
–
–
–
A
R
DS(ON)
Static drain-to-source on-state resistance
–
4.0
–
Ω
G
FS
C
ISS
C
OSS
C
RSS
Forward transductance
170
mmho V
DS
= 10
V
,
I
D
= 500mA
Input capacitance
–
–
–
50
40
10
V
GS
= 0
V
,
V
DS
= 25
V
,
f = 1.0MHz
Common source output capacitance
Reverse transfer capacitance
pF
V
DD
= 25
V
,
I
D
= 1.0A,
R
GEN
= 25Ω
t
(ON)
Turn-on delay time
–
–
10
ns
V
t
(OFF)
V
SD
Turn-off delay time
–
–
–
10
–
Diode forward voltage drop
0.85
V
GS
= 0
V
,
I
SD
= 350mA
Notes:
1. All
D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All
A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
VDD
90%
INPUT
0V
Pulse
R
L
10%
Generator
OUTPUT
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
R
GEN
t
f
t
r
VDD
OUTPUT
0V
INPUT
D.U.
T
.
10%
10%
90%
90%
Doc.# DSFP-VN0808
B081913
Supertex inc.
2
VN0808
3-Lead TO-92 Package Outline (L)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E
E1
1
3
2
Bottom View
Symbol
A
.170
–
b
.014
†
–
c
D
.175
–
E
.125
–
E1
.080
–
e
e1
.045
–
L
.500
–
MIN
NOM
MAX
.014
†
–
.095
–
Dimensions
(inches)
.210
.022
†
.022
†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc
.
All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
T
e
l: 408-222-8888
Doc.# DSFP-VN0808
B081913
3
