Microchip-Tech-VN2222LL-G-P003

Supertex inc.  

VN2222LL  

N-Channel Enhancement-Mode  

Vertical DMOS FET  

Features  

General Description  

►

Free from secondary breakdown  

►

Low power drive requirement  

►

Ease of paralleling  

This enhancement-mode (normally-off) transistor utilizes  

a vertical DMOS structure and Supertex’s well-proven,  

silicon-gate manufacturing process. This combination  

produces a device with the power handling capabilities  

of bipolar transistors and the high input impedance and  

positive temperature coefficient inherent in MOS devices.  

Characteristic of all MOS structures, this device is free  

from thermal runaway and thermally-induced secondary  

breakdown.  

►

Low C

ISS

and fast switching speeds  

►

Excellent thermal stability  

►

Integral source-drain diode  

►

High input impedance and high gain  

Applications  

►

Motor controls  

►

Converters  

Supertex’s vertical DMOS FE

T

s

a

re ideally suited to a  

wide range of switching and amplifying applications where  

very low threshold voltage, high breakdown voltage, high  

input impedance, low input capacitance, and fast switching  

speeds are desired.  

►

Amplifiers  

►

Switches  

►

Power supply circuits  

►

Drivers (relays, hammers, solenoids, lamps, memories,  

displays, bipolar transistors, etc.)  

Ordering Information  

Product Summary  

R

DS(ON)  

I

D(ON)  

(min)  

Part Number  

Package Option  

Packing  

BV

DSS

/BV

DGS  

(max)  

VN2222LL-G  

TO-92  

1000/Bag  

60V  

7.5

Ω  

750mA  

VN2222LL-G P002  

VN2222LL-G P003  

VN2222LL-G P005  

VN2222LL-G P013  

VN2222LL-G P014  

Pin Configuration  

TO-92  

2000/Reel  

-G denotes a lead (Pb)-free / RoHS compliant package.  

Contact factory for Wafer / Die availablity.  

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  

DRAIN  

SOURCE  

Absolute Maximum Ratings  

Parameter  

Value  

GATE  

TO-92  

Drain-to-source voltage  

Drain-to-gate voltage  

BV

DSS  

BV

DGS  

±30V  

Gate-to-source voltage  

Product Marking  

Operating and storage temperature  

-55

O

C to +150

O

C  

Si VN  

2 2 2 2 L  

LYYWW  

Absolute Maximum Ratings are those values beyond which damage to the device may  

occur. Functional operation under these conditions is not implied. Continuous operation  

of the device at the absolute rating level may affect device reliability. All voltages are  

referenced to device ground.  

YY = Year Sealed  

WW = Week Sealed  

= “Green” Packaging  

Package may or may not include the following marks: Si or  

Typical Thermal Resistance  

TO-92  

Package  

θ

ja  

TO-92  

132

O

C/W  

Doc.# DSFP-VN2222LL  

B082013  

Supertex inc.  

VN2222LL  

Thermal Characteristics  

I

D  

I

D  

Power Dissipation  

†

Package  

I

DR  

I

DRM  

@T

C

= 25

O

C  

(continuous)

†  

(pulsed)  

TO-92  

230mA  

1.0A  

1.0W  

230mA  

1.0A  

Notes:  

†

I

D

(continuous) is limited by max rated T

j

.  

Electrical Characteristics

(T

A

= 25°C unless otherwise specified)  

Sym  

BV

DSS  

V

GS(th)  

I

GSS  

Parameter  

Min  

60  

0.6  

–

Typ  

Max  

–

Units Conditions  

Drain-to-source breakdown voltage  

Gate threshold voltage  

Gate body leakage current  

–

–

–

–

V

V

V

GS

= 0

V

,

I

D

= 100µA  

V

GS

= V

DS

, I

D

= 1.0mA  

2.5  

100  

10  

nA  

V

GS

= ±20

V

,

V

DS

= 0V  

–

V

GS

= 0

V

,

V

DS

= Max Rating  

I

DSS  

Zero gate voltage drain current  

µA  

V

GS

= 0

V

,

V

DS

= 48

V

,  

T

A

= 125

O

C  

–

–

500  

I

D(ON)  

On-state drain current  

0.75  

–

–

–

–

A

V

GS

= 10

V

,

V

DS

= 10V  

V

GS

= 5.0

V

,

I

D

= 200mA  

V

GS

= 10

V

,

I

D

= 500mA  

–

–

7.5  

7.5  

R

DS(ON)  

Static drain-to-source on-state resistance  

Ω

G

FS  

C

ISS  

C

OSS  

C

RSS  

t

(ON)  

Forward transconductance  

Input capacitance  

100  

–

–

mmho V

DS

= 10

V

,

I

D

= 500mA  

–

–

–

–

–

–

–

60  

25  

8.0  

10  

10  

–

V

Common source output capacitance  

Reverse transfer capacitance  

Turn-on time  

–

pF  

V

DS

= 25

V

,  

f = 1.0MHz  

–

–

–

V

DD

= 15

V

,

I

D

= 0.6A,  

R

GEN

= 25Ω  

ns  

V

t

(OFF)  

Turn-off time  

V

SD  

Diode forward voltage drop  

0.85  

V

GS

= 0

V

,

I

SD

= 0.2A  

Notes:  

1. All

 

D.C. parameters 100% tested at 25

O

C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  

2. All

 

A.C. parameters sample tested.  

Switching Waveforms and Test Circuit  

10V  

VDD  

90%  

INPUT  

0V  

Pulse  

R

L  

10%  

Generator  

OUTPUT  

t

(ON)  

t

d(ON)  

t

(OFF)  

t

d(OFF)  

R

GEN  

t

f  

t

r  

VDD  

OUTPUT  

INPUT  

D.U.

T

.  

10%  

10%  

0V  

90%  

90%  

Doc.# DSFP-VN2222LL  

B082013  

Supertex inc.  

2

VN2222LL  

3-Lead TO-92 Package Outline (LL)  

D

A

Seating  

Plane  

1

2

3

L

c

b

e1  

e

Side View  

Front View  

E

E1  

1

3

2

Bottom View  

Symbol  

A

.170  

–

b

.014

†  

–

c

D

.175  

–

E

.125  

–

E1  

.080  

–

e

e1  

.045  

–

L

.500  

–

MIN  

NOM  

MAX  

.014

†  

–

.095  

–

Dimensions  

(inches)  

.210  

.022

†  

.022

†  

.205  

.165  

.105  

.105  

.055  

.610*  

JEDEC Registration TO-92.  

* This dimension is not specified in the JEDEC drawing.  

† This dimension differs from the JEDEC drawing.  

Drawings not to scale.  

Supertex Doc.#:

DSPD-3TO92N3, Version E041009.  

(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  

information go to

.)  

Supertex inc.

does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives  

an adequate “product liability indemnification insurance agreement.”

Supertex inc.

does not assume responsibility for use of devices described, and limits its liability  

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and  

specifications are subject to change without notice. For the latest product specifications refer to the

Supertex inc.

(website: http//www.supertex.com)  

©2013

Supertex inc

.

All rights reserved. Unauthorized use or reproduction is prohibited.  

Supertex inc.  

1235 Bordeaux Drive, Sunnyvale, CA 94089  

T

e

l: 408-222-8888  

Doc.# DSFP-VN2222LL  

B082013  

3