Microchip-Tech-VN2460N3-G-P003
| Part # | Microchip-Tech-VN2460N3-G-P003 |
Download  | Microchip-Tech-VN2460N3-G-P003 |
VN2460
N-Channel Enhancement-Mode Vertical DMOS FET
Features
General Description
• Free
from Secondary Breakdown
• Low
Power Drive Requirement
• Ease
of Paralleling
The VN2460 Enhancement-mode (normally-off)
transistor uses a vertical DMOS structure and a
well-proven silicon-gate manufacturing process. This
combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
• Low
C
ISS
and Fast Switching Speeds
• Excellent
Thermal Stability
• Integral
Source-Drain Diode
• High
Input Impedance and High Gain
Applications
Microchip’s vertical DMOS FE
T
s
a
re ideally suited for a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
• Motor
Controls
• Converters,
Amplifiers, and Switches
• Power
Supply Circuits
• Drivers
(Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Package Types
3-lead TO-92
(
T
o
p view)
3-lead SOT-89
(Top view)
DRAIN
DRAIN
SOURCE
DRAIN
GATE
SOURCE
GATE
See
T
a
ble 3-1
and
T
a
ble 3-2
for pin information.
2021 Microchip Technology Inc.
DS20005994A-page 1
VN2460
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage …………………………………………………………………………………………………………………….. BV
DSS
Drain-to-Gate Voltage
……………………………………………………………………………………………………………………….. BV
DGS
Gate-to-Source Voltage ……………………………………………………………………………………………………………………….. ±20V
Operating Ambient
T
e
mperature, T
A
……………………………………………………………………………………… –55°C to +150°C
Storage
T
e
mperature, T
S
……………………………………………………………………………………………………… –55°C to +150°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
T
A
= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle
Parameter
Sym.
Min. Typ. Max.
Unit
Conditions
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
600
1.5
—
—
—
4
V
V
V
GS
= 0
V
,
I
D
= 2 mA
V
GS
= V
DS
, I
D
= 2 mA
V
GS
= V
DS
, I
D
= 2 mA
(
Note 1
)
Change in V
GS(th)
with
T
e
mperature
Gate Body Leakage Current
ΔV
GS(th)
I
GSS
—
—
—
—
—
—
–5.5 mV/°C
100
10
nA
µA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0
V
,
V
DS
= Maximum rating
V
DS
= 0.8 Maximum rating,
V
GS
= 0
V
,
T
A
= 125°C
Zero-Gate Voltage Drain Current
I
DSS
—
—
1
mA
(
Note 1
)
On-State Drain Current
I
D(ON)
0.25
—
—
—
—
—
25
20
A
Ω
Ω
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5
V
,
I
D
= 100 mA
V
GS
= 10V, I
D
= 100 mA
Static Drain-to-Source On-State Resistance
R
DS(ON)
—
V
GS
= 10V, I
D
= 100 mA
(
Note 1
)
Change in R
DS(ON)
with
T
e
mperature
ΔR
DS(ON)
—
—
1.7 %/°C
Note 1:
Specification is obtained by characterization and is not 100% tested.
DS20005994A-page 2
2021 Microchip Technology Inc.
VN2460
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
T
A
= 25°C unless otherwise specified. All AC parameters are not 100% sample tested.
Parameter
Sym. Min. Typ. Max. Unit
Conditions
Forward Transconductance
Input Capacitance
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
150
50
25
10
10
25
20
mmho V
DS
= 25
V
,
I
D
= 100 mA
pF
V
GS
= 0
V
,
Common-Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
pF
pF
ns
ns
ns
ns
V
DS
= 25
V
,
f = 1 MHz
V
DD
= 25V,
I
D
= 250 mA,
GEN
= 25Ω
Rise Time
Turn-Off Delay Time
t
d(OFF)
t
f
R
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
V
SD
—
—
1.5
V
V
GS
= 0
V
,
I
SD
= 400 mA (
Note 1
)
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated.
Pulse test: 300 µs pulse, 2% duty cycle
TEMPERATURE SPECIFICATIONS
Parameter
Sym. Min. Typ.
Max. Unit
Conditions
TEMPERATURE RANGE
Operating Ambient
T
e
mperature
Storage
T
e
mperature
T
A
T
S
–55
–55
—
—
+150
+150
°C
°C
PACKAGE THERMAL RESISTANCE
3-lead TO-92
JA
JA
—
—
132
133
—
—
°C/W
°C/W
3-lead SOT-89
THERMAL CHARACTERISTICS
I
D
(
Note 1
)
(Continuous) (Pulsed)
I
D
Power Dissipation
at T
A
= 25°C
(W)
I
DR
(
Note 1
) I
DRM
Package
(mA)
(mA)
(mA)
(mA)
3-lead TO-92
160
200
500
600
1
160
200
500
600
3-lead SOT-89
1.6 (
Note 2
)
Note 1:
I
D
(continuous) is limited by maximum rated T
J
.
2:
Mounted on an FR5 Board, 25 mm x 25 mm x 1.57 mm.
2021 Microchip Technology Inc.
DS20005994A-page 3
VN2460
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5
V
GS
= 10V
8V
0.4
V
GS
= 10V
8V
6V
5V
0.3
0.2
0.1
0
6V
5V
4V
3V
4V
3V
0
10
20
30
40
50
0
2.0
4.0
6.0
8.0
10
V
DS
(volts)
V
DS
(volts)
FIGURE 2-1:
Outpu
t
C
haracteristics.
FIGURE 2-4:
Saturation Characteristics.
0.5
2.0
V
DS
= 25V
1.6
0.4
0.3
0.2
0.1
SOT-89
T
A
= -55
O
C
1.2
0.8
0.4
0.6
25
O
C
TO-92
125
O
C
0
0
0
25
50
75
100
125
150
0.1
0.2
0.3
0.4
0.5
I
D
(amperes)
T
A
(
O
C)
FIGURE 2-2:
Transconductance vs. Drain
FIGURE 2-5:
Power Dissipation vs. Case
Current.
Temperature.
1.0
1.0
SOT-89 (pulsed)
TO-92 (pulsed)
SOT-89 (DC)
SOT-89
T
D
C
= 25
O
C
0.8
0.6
0.4
0.2
P
= 1.6W
0.1
0.01
TO-92 (DC)
TO-92
P
= 1W
T
C
D
= 25
O
C
T
C
= 25
O
C
0
0.001
0.001
0.01
0.1
1.0
10
1.0
10
100
1000
V
DS
(volts)
t
p
(seconds)
FIGURE 2-6:
Thermal Response
FIGURE 2-3:
Maximum Rated Safe
Characteristics.
Operating Area.
DS20005994A-page 4
2021 Microchip Technology Inc.
VN2460
1.2
1.1
1.0
0.9
0.8
50
40
30
20
10
0
V
GS
= 4.5V
V
GS
= 10V
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
T
j
(
O
C)
I
D
(amperes)
FIGURE 2-7:
BV
DSS
Variation with
FIGURE 2-10:
On-Resistance vs. Drain
Temperature.
Current.
0.5
1.6
3.0
2.5
2.0
V
DS
= 25V
T
A
= -55
O
C
25
O
C
1.4
1.2
1.0
0.8
0.6
0.4
0.4
0.3
0.2
0.1
V
GS(th)
@ 2.0mA
125
O
C
1.5
1.0
0.5
0
R
DS(ON)
@ 10V, 0.1A
0
0
-50
-25
0
25
50
75
100
125
150
2.0
4.0
6.0
8.0
10
T
j
(
O
C)
V
GS (volts)
FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
V
GS(th)
and R
DS
Variation
with Temperature.
10
300
I
D
=0.5A
f = 1MHz
8.0
6.0
4.0
2.0
0
225
150
75
V
DS
= 10V
V
DS
= 40V
C
ISS
C
RSS
C
OSS
0
0
10
20
30
40
0
1.0
2.0
3.0
4.0
5.0
V
DS
(volts)
Q
G
(nanocoulombs)
FIGURE 2-9:
Capacitance vs.
FIGURE 2-12:
Gate Drive Dynamic
Drain-to-Source Voltage.
Characteristics.
2021 Microchip Technology Inc.
DS20005994A-page 5
VN2460
3.0
PIN DESCRIPTION
The details on the pins of VN2460 are listed on
T
a
ble 3-1
and
T
able 3-2
. Refer to
Package Types
for
the location of pins.
TABLE 3-1:
Pin Number
3-LEAD TO-92 PIN FUNCTION TABLE
Pin Name
Description
1
2
3
Source
Gate
Source
Gate
Drain
Drain
TABLE 3-2:
Pin Number
3-LEAD SOT-89 PIN FUNCTION TABLE
Pin Name
Description
1
2,4
3
Gate
Drain
Gate
Drain
Source
Source
DS20005994A-page 6
2021 Microchip Technology Inc.
VN2460
4.0
FUNCTIONAL DESCRIPTION
Figure 4-1
illustrates the switching waveforms and test
circuit for VN2460.
10V
VDD
90%
INPUT
Pulse
R
L
10%
Generator
OUTPUT
0V
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
R
GEN
t
f
t
r
VDD
OUTPUT
0V
INPUT
D.U.
T
.
10%
10%
90%
90%
FIGURE 4-1:
Switching Waveforms and Test Circuit.
TABLE 4-1:
PRODUCT SUMMARY
R
DS(ON)
I
D(ON)
(Minimum)
(mA)
BV
DSS
/BV
DGS
(Maximum)
(Ω)
(V)
600
20
2500
2021 Microchip Technology Inc.
DS20005994A-page 7
VN2460
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
Example
VN2460
3-lead TO-92
XXXXXX
e3
e3
XX
N3
YWWNNN
110513
3-lead SOT-89
Example
XXXXYWW
VN4F115
NNN
708
Legend:
XX…X Product
Code or Customer-specific information
Y
Y
e
ar code (last digit of calendar year)
YY
WW
NNN
Y
e
ar code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC
®
designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
))
e
3
*
e
3
can be found on the outer packaging for this package.
Note
: In
the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
DS20005994A-page 8
2021 Microchip Technology Inc.
VN2460
2021 Microchip Technology Inc.
DS20005994A-page 9
VN2460
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
H
E
E1
1
2
3
L
b
b1
A
e
e1
Top View
Side View
Symbol
A
1.40
–
b
0.44
–
b1
0.36
–
C
0.35
–
D
4.40
–
D1
1.62
–
E
2.29
–
E1
2.00
†
–
e
e1
H
3.94
–
L
0.73
†
–
MIN
NOM
MAX
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
†
This dimension differs from the JEDEC drawing
Drawings not to scale
.
DS20005994A-page 10
2021 Microchip Technology Inc.
VN2460
APPENDIX A:
REVISION HISTORY
Revision A (March 2021)
• Converted
Supertex Doc# DSFP-VN2460 to
Microchip DS20005994A
• Changed
the package marking format
• Removed
the 3-lead TO-92 N3 P002, P005, and
P013 media types to align the packaging specifi
–
cations with the actual BQM
• Added
sections to comply with the standard
Microchip format
• Made
minor text changes throughout the
document
2021 Microchip Technology Inc.
DS20005994A-page 11
VN2460
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office
.
Examples:
XX
PART NO.
Device
–
X
–
X
Package
Options
Environmental
Media Type
a) VN2460N3-G:
N-Channel Enhancement-
Mode, Vertical DMOS FE
T
,
3-lead TO-92, 1000/Bag
b) VN2460N3-G-P003:
c) VN2460N3-G-P013:
N-Channel Enhancement-
Mode, Vertical DMOS FE
T
,
3-lead TO-92, 2000/Reel
Device:
VN2460
=
N-Channel Enhancement-Mode Vertical
DMOS FET
Packages:
N3
N8
=
=
3-lead TO-92
N-Channel Enhancement-
Mode, Vertical DMOS FE
T
,
3-lea
d
T
O-92, 2000/AMMO
Pack
3-lead SOT-89
Environmental:
Media Types:
G
=
Lead (Pb)-free/RoHS-compliant Package
d) VN2460N8-G:
N-Channel Enhancement-
Mode, Vertical DMOS FE
T
,
3-lead SOT-89, 2000/Reel
(blank)
P003
=
=
=
=
1000/Bag for an N3 Package
2000/Reel for an N3 Package
2000/AMMO Pack for an N3 Package
2000/Reel for an N8 Package
P014
(blank)
DS20005994A-page 12
2021 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
•
•
Microchip products meet the specifications contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is secure when used in the intended manner and under normal conditions.
There are dishonest and possibly illegal methods being used in attempts to breach the code protection features of the Microchip
devices. We believe that these methods require using the Microchip products in a manner outside the operating specifications
contained in Microchip’s Data Sheets. Attempts to breach these code protection features, most likely, cannot be accomplished
without violating Microchip’s intellectual property rights.
•
•
Microchip is willing to work with any customer who is concerned about the integrity of its code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not
mean that we are guaranteeing the product is “unbreakable.” Code protection is constantly evolving. We at Microchip are
committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection
feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or
other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication is provided for the sole
purpose of designing with and using Microchip products. Infor
–
mation regarding device applications and the like is provided
only for your convenience and may be superseded by updates.
It is your responsibility to ensure that your application meets
with your specifications.
Trademarks
The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo,
A
V
R Freaks, BesTime, BitCloud, chipKI
T
,
chipKIT logo, CryptoMemory, CryptoR
F
, dsPIC, FlashFlex,
flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck,
LinkMD, maXStylus, maX
T
o
uch, MediaLB, mega
A
V
R, Microsemi,
Microsemi logo, MOS
T
,
M
OST logo, MPLAB, OptoLyzer,
PackeTime, PIC, picoPower, PICSTAR
T
,
P
IC32 logo, PolarFire,
Prochip Designer, Q
T
ouch, SAM-BA, SenGenuity, SpyNIC, SS
T
,
SST Logo, SuperFlash, Symmetricom, SyncServer,
T
a
chyon,
TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A. and
other countries.
THIS INFORMATION IS PROVIDED BY MICROCHIP “AS IS”.
MICROCHIP MAKES NO REPRESENTATIONS OR WAR
–
RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION INCLUDING BUT NOT
LIMITED TO ANY IMPLIED WARRANTIES OF NON-
INFRINGEMEN
T
,
M
ERCHANTABILIT
Y
,
A
ND FITNESS FOR A
PARTICULAR PURPOSE OR WARRANTIES RELATED TO
ITS CONDITION, QUALIT
Y
,
O
R PERFORMANCE.
AgileSwitch, AP
T
,
C
lockWorks, The Embedded Control Solutions
Company, EtherSynch, Flash
T
e
c, Hyper Speed Control, HyperLight
Load, IntelliMOS, Libero, motorBench, m
T
o
uch, Powermite 3,
Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-
Wire, SmartFusion, SyncWorld,
T
e
mux, TimeCesium, TimeHub,
TimePictra, TimeProvider, WinPath, and ZL are registered
trademarks of Microchip
T
e
chnology Incorporated in the U.S.A.
IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDI
–
REC
T
,
S
PECIAL, PUNITIVE, INCIDENTA
L
O
R CONSEQUEN
–
TIAL LOSS, DAMAGE, COST OR EXPENSE OF ANY KIND
WHATSOEVER RELATED TO THE INFORMATION OR ITS
USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS
BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES
ARE FORESEEABLE. TO THE FULLEST EXTENT
ALLOWED BY LAW, MICROCHIP’S TOTAL LIABILITY ON
ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION
OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF
AN
Y
,
T
HAT YOU HAVE PAID DIRECTLY TO MICROCHIP
FOR THE INFORMATION. Use of Microchip devices in life sup
–
port and/or safety applications is entirely at the buyer’s risk, and
the buyer agrees to defend, indemnify and hold harmless
Microchip from any and all damages, claims, suits, or expenses
resulting from such use. No licenses are conveyed, implicitly or
otherwise, under any Microchip intellectual property rights
unless otherwise stated.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky,
BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive,
CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net,
Dynamic Average Matching, DAM, ECAN, Espresso T1S,
EtherGREEN, IdealBridge, In-Circuit Serial Programming, ICS
P
,
INICnet, Intelligent Paralleling, Inter-Chip Connectivity,
JitterBlocker, maxCrypto, maxView, memBrain, Mindi, MiWi,
MPASM, MP
F
,
M
PLAB Certified logo, MPLIB, MPLINK, MultiTRAK,
NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net,
PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE,
Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O,
simpleMA
P
,
S
impliPH
Y
,
S
martBuffer, SMART-I.S., storClad, SQI,
SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPH
Y
, T
o
tal
Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPH
Y
,
ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks
of Microchip
T
e
chnology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip
T
e
chnology Incorporated in
the U.S.A.
The Adaptec logo, Frequency on Demand, Silicon Storage
T
e
chnology, and Symmcom are registered trademarks of Microchip
T
e
chnology Inc. in other countries.
GestIC is a registered trademark of Microchip
T
e
chnology Germany
II GmbH & Co. KG, a subsidiary of Microchip
T
e
chnology Inc., in
other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2021, Microchip
T
e
chnology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-7963-5
2021 Microchip Technology Inc.
DS20005994A-page 13
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
Australia – Sydney
T
e
l: 61-2-9868-6733
India – Bangalore
T
e
l: 91-80-3090-4444
Austria – Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China – Beijing
T
e
l: 86-10-8569-7000
India – New Delhi
T
e
l: 91-11-4160-8631
Denmark – Copenhagen
Tel: 45-4485-5910
Fax: 45-4485-2829
China – Chengdu
T
e
l: 86-28-8665-5511
India – Pune
T
e
l: 91-20-4121-0141
Finland – Espoo
Tel: 358-9-4520-820
China – Chongqing
T
e
l: 86-23-8980-9588
Japan – Osaka
T
e
l: 81-6-6152-7160
Web Address:
France – Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
China – Dongguan
T
e
l: 86-769-8702-9880
Japan – Tokyo
T
e
l: 81-3-6880- 3770
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China – Guangzhou
T
e
l: 86-20-8755-8029
Korea – Daegu
T
e
l: 82-53-744-4301
Germany – Garching
Tel: 49-8931-9700
China – Hangzhou
T
e
l: 86-571-8792-8115
Korea – Seoul
T
e
l: 82-2-554-7200
Germany – Haan
Tel: 49-2129-3766400
Austin, TX
Tel: 512-257-3370
China – Hong Kong SAR
T
e
l: 852-2943-5100
Malaysia – Kuala Lumpur
T
e
l: 60-3-7651-7906
Germany – Heilbronn
Tel: 49-7131-72400
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China – Nanjing
T
e
l: 86-25-8473-2460
Malaysia – Penang
T
e
l: 60-4-227-8870
Germany – Karlsruhe
Tel: 49-721-625370
China – Qingdao
Philippines – Manila
Germany – Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
T
e
l: 86-532-8502-7355
T
e
l: 63-2-634-9065
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
China – Shanghai
T
e
l: 86-21-3326-8000
Singapore
T
e
l: 65-6334-8870
Germany – Rosenheim
Tel: 49-8031-354-560
China – Shenyang
T
e
l: 86-24-2334-2829
Taiwan – Hsin Chu
T
e
l: 886-3-577-8366
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Israel – Ra’anana
Tel: 972-9-744-7705
China – Shenzhen
T
e
l: 86-755-8864-2200
Taiwan – Kaohsiung
T
e
l: 886-7-213-7830
Italy – Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
China – Suzhou
T
e
l: 86-186-6233-1526
Taiwan – Taipei
T
e
l: 886-2-2508-8600
Detroit
Novi, MI
Tel: 248-848-4000
China – Wuhan
T
e
l: 86-27-5980-5300
Thailand – Bangkok
T
e
l: 66-2-694-1351
Italy – Padova
Tel: 39-049-7625286
Houston, TX
Tel: 281-894-5983
China – Xian
T
e
l: 86-29-8833-7252
Vietnam – Ho Chi Minh
T
e
l: 84-28-5448-2100
Netherlands – Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
China – Xiamen
T
e
l: 86-592-2388138
Norway – Trondheim
Tel: 47-7288-4388
China – Zhuhai
T
e
l: 86-756-3210040
Poland – Warsaw
Tel: 48-22-3325737
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Romania – Bucharest
Tel: 40-21-407-87-50
Spain – Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Raleigh, NC
Tel: 919-844-7510
Sweden – Gothenberg
Tel: 46-31-704-60-40
New York, NY
Tel: 631-435-6000
Sweden – Stockholm
Tel: 46-8-5090-4654
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
UK – Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Canada – Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005994A-page 14
2021 Microchip Technology Inc.
02/28/20
