Microchip-Tech-VN2460N8-G
| Part # | Microchip-Tech-VN2460N8-G |
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VN2460
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
General Description
►
Free from secondary breakdown
►
Low power drive requirement
►
Ease of paralleling
►
Low C
ISS
and fast switching speeds
►
Excellent thermal stability
►
Integral source-drain diode
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure
and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with
the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally induced
secondary breakdown.
►
High input impedance and high gain
Applications
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
►
Motor controls
►
Converters
►
Amplifiers
►
Switches
►
Power supply circuits
►
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Package Options
Device
R
DS(ON)
I
D(ON)
BV
DSS
/BV
DGS
(max)
(Ω)
(min)
(mA)
TO-243AA
(V)
TO-92
(SOT-89)
VN2460
VN2460N3-G
VN2460N8-G
600
20
250
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
SOURCE
DRAIN
GATE
Value
BV
DSS
GATE
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Drain-to-source voltage
Drain-to-gate voltage
Product Marking
BV
DGS
SiVN
2 4 6 0
YY WW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Gate-to-source voltage
±20V
Operating and storage temperature
Soldering temperature
*
-55°C to +150°C
+300°C
Package may or may not include the following marks: Si or
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
W = Code for week sealed
VN4FW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
*
Distance of 1.6mm from case for 10 seconds.
VN2460
Thermal Characteristics
I
D
I
D
Power Dissipation
†
θ
jc
(
O
C/W)
θ
ja
(
O
C/W)
I
DR
I
DRM
(mA)
(continuous)
*
(mA)
(pulsed)
(mA)
@T
A
= 25
O
C
(W)
Package
(mA)
TO-92
160
200
500
600
0.74
1.6
‡
125
15
170
78
‡
160
200
500
600
TO-243AA
Notes:
†
‡
I
D
(continuous) is limited by max rated T
J
,
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
(T =
25°C unless otherwise specified)
Electrical Characteristics
A
Sym
BV
DSS
V
GS(th)
Parameter
Min
Typ
Max
–
Units Conditions
Drain-to-source breakdown voltage
Gate threshold voltage
600
–
–
–
–
V
V
V
GS
= 0
V
,
I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 2.0mA
1.5
4.0
-5.5
100
ΔV
GS(th)
Change in V
GS(th)
with temperature
–
–
mV/
O
C V
GS
= V
DS
, I
D
= 2.0mA
I
GSS
Gate body leakage current
nA
V
GS
= ±20
V
,
V
DS
= 0V
V
GS
= 0
V
,
V
DS
= Max Rating
–
–
–
–
10
µA
I
DSS
Zero gate voltage drain current
V
DS
= 0.8 Max Rating,
V
GS
= 0
V
, T
A
= 125
O
C
1.0
mA
A
I
D(ON)
On-state drain current
0.25
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
= 10
V
,
V
DS
= 25V
V
GS
= 4.5
V
,
I
D
= 100mA
V
GS
= 10
V
,
I
D
= 100mA
–
–
25
20
1.7
–
R
DS(ON)
Static drain-to-source on-state resistance
Ω
ΔR
DS(ON)
Change in R
DS(ON)
with temperature
–
%/
O
C V
GS
= 10
V
,
I
D
= 100mA
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
Forward transconductance
Input capacitance
50
–
mmho V
DS
= 25
V
,
I
D
= 100mA
150
50
25
10
10
25
20
1.5
V
GS
= 0
V
,
V
DS
= 25
V
,
f = 1.0MHz
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
–
pF
–
–
V
DD
= 25
V
,
I
D
= 250mA,
R
GEN
= 25Ω
Rise time
–
ns
V
t
d(OFF)
t
f
Turn-off delay time
–
Fall time
–
V
SD
Diode forward voltage drop
–
V
GS
= 0
V
,
I
SD
= 400mA
Notes:
1. All
D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All
A.C. parameters sample tested.
Switching Waveforms and Test Circuit
V
DD
10V
90%
R
L
INPUT
PULSE
GENERATOR
10%
0V
OUTPUT
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
R
GEN
t
r
t
F
V
DD
D.U.
T
.
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
VN2460
Typical Performance Curves
Output Characteristics
Saturation Characteristics
1.2
0.5
0.4
VGS = 10V
1.0
0.8
0.6
0.4
0.2
0
8V
6V
VGS = 10V
8V
5V
0.3
0.2
0.1
0
6V
5V
4V
3V
4V
3V
0
10
20
30
40
50
0
2
4
6
8
10
V
DS
(Volts)
V
DS
(Volts)
Transconductance vs. Drain Current
Power Dissipation vs.
T
e
mperature
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.6
1.2
V
= 25V
DS
SO
T
–
89
T
= -55
O
C
A
T
T
= 25
O
C
A
TO-92
0.8
0.4
0
= 125
O
C
A
0.0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
T
A
(
O
C)
I
(Amperes)
D
Maximum Rated Safe Operating Area
Thermal Response Characteristics
SOT-89
SOT-89 (pulsed)
1.0
1.0
0.8
0.6
0.4
TO-92 (pulsed)
P
T
= 1.6W
= 25
O
C
D
C
0.1
TO-92 (DC)
SOT-89 (DC)
0.01
0.2
0
TO-92
P
T
= 1W
= 25
O
C
D
C
T
= 25
O
C
C
0.001
1
10
100
1000
0.001
0.01
0.1
1.0
10
V
(Volts)
t
p
(seconds)
DS
3
VN2460
Typical Performance Curves
(cont.)
On Resistance vs. Drain Current
BV
DSS
Variation with
T
e
mperature
50
40
30
20
10
0
1.2
VGS = 4.5V
1.1
1.0
0.9
0.8
VGS = 10V
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
T
j
(
°
C)
I
(Amperes)
D
Transfer Characteristics
V
and R
w/
T
e
mperature
DS(ON)
GS(TH)
3.0
0.5
1.6
1.4
1.2
1.0
0.8
V
= 25V
T
= -55°C
DS
A
2.5
2.0
1.5
1.0
0.4
0.3
0.2
T
= 25°C
A
V
@ 2mA
GS(th)
T
= 125°C
A
0.1
0
0.5
0.0
R
@ 10
V
,
0
.1A
0.6
0.4
DS(on)
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
V
(Volts)
T
j
(
°
C)
GS
Gate Drive Dynamic Characteristics
Capacitance vs. Drain Source Voltage
10
300
225
150
75
I
= 0.5A
D
f = 1MHz
8
6
4
V
=10V
DS
V
=40V
DS
C
ISS
2
0
C
OSS
C
RSS
0
0
1.0
2.0
3.0
4.0
5.0
0
10
20
30
40
Q
G
(nanocoulombs)
V
(volts)
DS
4
VN2460
3-Lead TO-92 Package Outline (N3)
D
A
1
2
3
Seating Plane
L
b
c
e1
e
Side View
Front View
E
E1
3
1
2
Bottom View
Symbol
A
.170
–
b
c
D
E
.125
–
E1
.080
–
e
e1
.045
–
L
.500
–
MIN
NOM
MAX
.014
†
–
.014
†
–
.175
–
.095
–
Dimensions
(inches)
.210
.022
†
.022
†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version D080408.
5
VN2460
3-Lead TO-243AA (SOT-89) Package Outline (N8)
b
b1
Symbol
A
1.40
–
b
b1
0.36
–
C
0.35
–
D
4.40
–
D1
1.62
–
E
2.29
–
E1
2.13
–
e
e1
H
3.94
–
L
0.89
–
MIN
NOM
MAX
0.44
–
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
Drawings not to scale
.
Supertex Doc. #:
DSPD-3TO243AAN8, Version D070908.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2008
All rights reserved. Unauthorized use or reproduction is prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089
T
e
l: 408-222-8888
Doc.# DSFP-VN2460
A011409
6
Mouser Electronics
Authorized Distributor
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