Microchip-Tech-VP3203N8-G
| Part # | Microchip-Tech-VP3203N8-G |
Download  | Microchip-Tech-VP3203N8-G |
Supertex inc.
VP3203
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
►
Free from secondary breakdown
►
Low power drive requirement
►
Ease of paralleling
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
►
Low C
ISS
and fast switching speeds
►
High input impedance and high gain
►
Excellent thermal stability
►
Integral source-to-drain diode
Applications
►
Motor controls
►
Converters
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
►
Amplifiers
►
Switches
►
Power supply circuits
►
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Product Summary
R
DS(ON)
I
D(ON)
Part Number
Package Option
Packing
BV
DSS
/BV
DGS
(max)
(min)
VP3203N3-G
3-Lead TO-92
1000/Bag
-30V
0.6
Ω
-4.0A
VP3203N3-G P002
VP3203N3-G P003
Pin Configuration
VP3203N3-G P005
3-Lead TO-92
VP3203N3-G P013
2000/Reel
2000/Reel
DRAIN
VP3203N3-G P014
VP3203N3-G
TO-243AA (SOT-89)
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
SOURCE
SOURCE
DRAIN
GATE
GATE
Absolute Maximum Ratings
Parameter
TO-92
TO-243AA (SOT-89)
Value
BV
DSS
BV
DGS
±20V
Drain-to-source voltage
Drain-to-gate voltage
Product Marking
SiVP
3 2 0 3
YYWW
YY = Year Sealed
Gate-to-source voltage
WW = Week Sealed
Operating and storage temperature
-55
O
C to +150
O
C
= “Green” Packaging
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package may or may not include the following marks: Si or
TO-92
Typical Thermal Resistance
W = Code for week sealed
VP2LW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Package
θ
ja
TO-92
132
O
C/W
133
O
C/W
TO-243AA (SOT-89)
Doc.# DSFP-VP3203
B082613
Supertex inc.
VP3203
Thermal Characteristics
I
D
Package
I
D
Power Dissipation
†
I
DR
I
DRM
(continuous)
†
(pulsed)
@T
A
= 25
O
C
TO-92
-650mA
-4.0A
-4.0A
0.74W
1.6
‡
-650mA
-4.0A
-4.0A
TO-243AA (SOT-89)
-1100mA
-1100mA
†
‡
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T
A
= 25
O
C unless otherwise specified)
Sym
BV
DSS
V
GS(th)
Parameter
Min
Typ
Max Units
Conditions
Drain-to-source breakdown voltage
Gate threshold voltage
-30
–
–
V
V
V
GS
= 0
V
,
I
D
= -10mA
V
GS
= V
DS
, I
D
= -10mA
-1.0
–
-3.5
ΔV
GS(th)
Change in V
GS(th)
with temperature
–
–
–
–
-1.0
–
-5.5 mV/
O
C V
GS
= V
DS
, I
D
= -10mA
I
GSS
Gate body leakage
-100
-10
nA
µA
V
GS
= ± 20
V
,
V
DS
= 0V
V
GS
= 0
V
,
V
DS
= Max Rating
I
DSS
Zero gate voltage drain current
On-state drain current
V
DS
= 0.8 Max Rating,
–
–
-1.0
mA
A
V
GS
= 0
V
, T
A
= 125°C
V
GS
= -10
V
,
V
DS
= -5.0V
V
GS
= -4.5
V
,
I
D
= -1.5A
V
GS
= -4.5
V
,
I
D
= -750mA
V
GS
= -10
V
,
I
D
= -3.0A
V
GS
= -10
V
,
I
D
= -1.5A
I
D(ON)
–
–
–
–
–
–
-14
–
TO-92
SOT-89
TO-92
–
–
–
–
–
1.0
1.0
0.6
0.6
1.0
–
Static drain-to-source on-state
resistance
R
DS(ON)
Ω
SOT-89
ΔR
DS(ON)
Change in R
DS(ON)
with temperature
%/
O
C V
GS
= -10
V
,
I
D
= -1.5A
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
Forward transductance
Input capacitance
1000 2000
mmho V
DS
= -25
V
,
I
D
= -2.0A
–
–
–
–
–
–
–
–
–
200
300
120
60
10
15
25
25
-1.6
–
V
GS
= 0
V
,
V
DS
= -25
V
,
f = 1.0MHz
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
100
pF
ns
45
–
V
DD
= -25
V
,
I
D
= -2.0A,
R
GEN
= 10Ω
Rise time
–
t
d(OFF)
t
f
Turn-off delay time
–
Fall time
–
–
V
SD
Diode forward voltage drop
Reverse recovery time
V
V
GS
= 0
V
,
I
SD
= -1.5A
V
GS
= 0
V
,
I
SD
= -1.0A
t
rr
300
ns
Notes:
1. All
D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All
A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
Pulse
10%
Generator
INPUT
R
GEN
90%
t
(OFF)
-10V
t
(ON)
t
d(ON)
D.U.
T
.
t
r
t
d(OFF)
t
f
INPUT
OUTPUT
0V
R
L
VDD
90%
90%
OUTPUT
VDD
10%
10%
Doc.# DSFP-VP3203
B082613
Supertex inc.
2
VP3203
Typical Performance Curves
BV
DSS
Variation with Temperature
On-Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0
1.1
1.0
0.9
V
GS
= -5V
V
GS
= -10V
0
-4.0
-8.0
-12
-16
-20
-50
0
50
100
150
T
j
(
O
C)
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
Transfer Characteristics
-10
V
DS
= -25V
1.4
1.2
1.0
0.8
0.6
1.4
1.2
1.0
0.8
0.6
A
= -55
O
C
R
DS(ON)
@ -10V, -3A
T
25
O
C
-8.0
-6.0
-4.0
-2.0
0
125
O
C
V
(th)
@ -10mA
0
-2.0
-4.0
-6.0
-8.0
-10
-50
0
50
100
150
V
GS
(volts)
T
j
(
O
C)
Gate Drive Dynamic Characteristics
Capacitance vs. Drain-to-Source Voltage
300
-10
f = 1MHz
-8.0
-6.0
-4.0
-2.0
0
225
V
DS
= -10V
C
ISS
V
DS
= -20V
150
335pF
C
OSS
75
200pF
1.0
C
RSS
0
-0
-10
-30
0
2.0
3.0
4.0
5.0
V
DS
(volts)
-20
Q
G
(nanocoulombs)
Doc.# DSFP-VP3203
B082613
Supertex inc.
3
VP3203
Typical Performance Curves
(cont.)
Output Characteristics
Saturation Characteristics
-20
-20
-16
-12
-8.0
-4.0
0
V
GS
= -10V
V
GS
= -10V
-16
-8V
-8V
-6V
-12
-8.0
-6V
-4.0
-4V
-3V
-4V
-3V
0
0
-5.0
-10
-15
-20
-25
-30
0
-2.0
-4.0
-6.0
-8.0
-10
V
DS
(volts)
V
DS
(volts)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
5.0
20
V
DS
= -25V
TO-243AA
16
4.0
3.0
2.0
1.0
0
12
T
A
= 125
O
C
T
A
= 25
O
C
8.0
T
A
= -55
O
C
TO-92
4.0
0
0
-1.0
-2.0
-3.0
-4.0
-5.0
0
25
50
75
100
125
150
T
A
(
O
C)
I
D
(amperes)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
1.0
-10
TO-243AA (pulsed)
TO-92 (pulsed)
0.8
0.6
0.4
0.2
0
TO-243AA(DC)
-1.0
TO-243AA
TO-92 (DC)
P
D
= 1.6W
T
A
= 25
O
C
-0.1
TO-92
P
= 1W
T
C
D
= 25
O
C
T
A
= 25
O
C
-0.01
-0.1
-1.0
-100
0.001
0.01
0.1
1.0
10
V
DS
(volts)
-10
t
p
(seconds)
Doc.# DSFP-VP3203
B082613
Supertex inc.
4
VP3203
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E
E1
1
3
2
Bottom View
Symbol
A
.170
–
b
.014
†
–
c
D
.175
–
E
.125
–
E1
.080
–
e
e1
.045
–
L
.500
–
MIN
NOM
MAX
.014
†
–
.095
–
Dimensions
(inches)
.210
.022
†
.022
†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
Doc.# DSFP-VP3203
B082613
Supertex inc.
5
VP3203
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
H
E
E1
1
2
3
L
b
b1
A
e
e1
Top View
Side View
Symbol
A
1.40
–
b
0.44
–
b1
0.36
–
C
0.35
–
D
D1
1.62
–
E
2.29
–
E1
2.00
†
–
e
e1
H
L
0.73
†
–
MIN
NOM
MAX
4.40
–
3.94
–
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
†
This dimension differs from the JEDEC drawing
Drawings not to scale
.
Supertex Doc. #:
DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc
.
All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
T
e
l: 408-222-8888
Doc.# DSFP-VP3203
B082613
6
