Microchip-Tech-VRF150MP
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VRF150
VRF150MP
50
V
,
1
50W, 150MHz
RF POWER VERTICAL MOSFET
The VRF150 is a gold-metallized silicon n-channel RF power transistor de-
signe
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pplication
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ower
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
M174
FEATURES
• 70:1
Load VSWR Capability at Specified Operating Conditions
• Improved
Ruggedness V
(BR)DSS
= 170V
• 150W
with 11dB Typical Gain @ 150MHz, 50V
• 150W
with 18dB Typical Gain @ 30MHz, 50V
• Excellent
Stability & Low IMD
• Nitride
Passivated
• Refractory
Gold Metallization
• High
Voltage Replacement for MRF150
• RoHS
Compliant
• Common
Source Configuration
• Available
in Matched Pairs
Maximum Ratings
All Ratings: T
C
=25
°
C unless otherwise specified
Symbol
Parameter
VRF150(MP)
Unit
V
DSS
Drain-Source Voltage
170
V
I
D
V
GS
P
D
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
16
A
±40
V
T
o
tal Device dissipation @ T
C
= 25°C
Storage
T
e
mperature Range
Operating Junction
T
e
mperature
300
W
T
STG
T
J
-65 to 150
200
°C
Static Electrical Characteristics
Symbol
Parameter
Min
Typ
180
2.0
Max
Unit
V
(BR)DSS
Drain-Source Breakdown Voltage (V
GS
= 0
V
,
I
D
= 100mA)
On State Drain Voltage (I
D(ON)
= 10A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= 100
V
,
V
GS
= 0V)
Gate-Source Leakage Current (V
GS
= ±20
V
,
V
DS
= 0V)
Forward Transconductance (V
DS
= 10
V
,
I
D
= 5A)
Gate Threshold Voltage (V
DS
= 10
V
,
I
D
= 100mA)
170
V
V
DS(ON)
3.0
1.0
1.0
I
DSS
I
GSS
mA
μA
g
fs
4.5
2.9
mhos
V
V
GS(TH)
3.6
4.4
Thermal Characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Junction to Case Thermal Resistance
0.60
°C/W
R
θ
JC
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Dynamic Characteristics
VRF150(MP)
Symbol
C
ISS
Parameter
Test Conditions
V
GS
= 0V
Min
Typ
420
210
35
Max
Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
oss
V
DS
= 50V
pF
C
rss
f = 1MHz
Functional Characteristics
Symbol
Parameter
Min
Typ
18
Max
Unit
1
G
PS
f
1
= 30MHz, f
2
= 30.001MHz, V
DD
= 50
V
,
I
DQ
= 250mA, P
out
= 150W
PEP
f = 150MHz, V
DD
= 50
V
,
I
DQ
= 250mA, P
out
= 150W
dB
G
PS
11
1
1
η
D
f
1
= 30MHz, f
2
= 30.001MHz, V
DD
= 50
V
,
I
DQ
= 250mA, P
out
= 150W
PEP
f
1
= 30MHz, f
2
= 30.001MHz, V
DD
= 50
V
,
I
DQ
= 250mA, P
out
= 150W
PEP
50
%
IMD
(d3)
-32
dBc
f
1
= 30MHz, V
DD
= 50
V
,
I
DQ
= 250mA, P
out
= 150W CW
ψ
No Degradation in Output Power
70:1 VSWR – All Phase Angles, 0.2mSec X 20% Duty Factor
Class A Characteristics
Symbol
Test Conditions
Min
Typ
20
Max
Unit
G
PS
IMD
(d3)
V
DD
= 50
V
,
I
DQ
= 3A, P
out
= 150W
PE
P
, f1 = 30MHz, f2 = 30.001MHz
-50
-75
dB
IMD
(d9-d13)
1.
T
o
M
IL-STD-1311 Version A, test method 2204B, Two
T
o
ne, Reference Each
T
o
ne
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
35
30
25
20
15
10
35
30
25
20
15
10
250µs PULSE
TEST<0.5 % DUTY
CYCLE
14V
10V
9V
T
J
= -55°C
T
J
= 25°C
8V
7V
6V
T
J
= 125°C
5V
4V
5
5
0
0
0
2
4
6
8
10
12
0
4
8
12 16 20
24 28
32
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, GATE-TO-SOURCE VOLTAGE (V)
)
DS(ON
GS
FIGURE 1,
Output Characteristics
FIGURE 2,
Transfer Characteristics
1,000
20
10
C
iss
I
Pdmax
DMax
C
oss
R
ds(on)
100
1
DC line
C
rss
T
J
=
125°C
T
C
=
75°C
10
1
0
10
20
30
40
50
1
10
100
250
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
FIGURE 3,
Capacitance vs Drain-to-Source Voltage
FIGURE 4,
Forward Safe Operating Area
Typical Performance Curves
VRF150(MP)
0.7
0.6
D = 0.9
0.5
0.7
0.4
0.5
Note:
0.3
t
1
0.3
0.2
0.1
0
t
2
t
= Pulse Duration
1
t
1
t
/
2
+ T
Duty Factor D =
Peak T
= P
x Z
0.1
J
DM
θJC
C
0.05
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
−20
−25
−30
−35
−40
−45
−50
300
Vdd=50V, Idq = 250mA,
Vdd=50V, Idq = 250mA,
Freq=150MHz
Freq=150MHz
250
200
150
100
50
Vdd=50V
IM3
IM5
Vdd=40V
0
0
50
100
150
200
250
0
5
10
15
20
P
out
, INPUT POWER (WATTS PEP)
P
out
, OUTPUT POWER (WATTS PEP)
Figure 7. P
OUT
versus P
IN
Figure 6. IMD versus P
OUT
VRF150(MP)
30 MHz test Circuit
+ 50VD
L1
+
L2
C9
C6
C8
C4
C10
C7
Bias
0-12V
T2
RF
Output
C5
R1
DUT
R3
C3
C2
RF
Input
R2
C1
L1 –
VK200-4B
C1 — 470 pF Dipped Mica
C2, C5, C6 – C9 — 0.1uF
SMT
C3 — 200pF ATC 700C
C4 — 15pF,
ATC 700C
C10 — 10uF, 100V Electrolytic
L2 — 2 Ferrite beads,
2.0 uH
R1, R2 — 51
7
, 1 W Carbon
R3 — 3.3
7
, 1 W Carbon
T1 — 9:1 Transformer
T2 — 1:9 Transformer
150 MHz test Circuit
RFC1
+ 50VDC
+
L4
C10
C11
Bias
0-12V
+
RF
Output
R1
C9
L3
L2
C4
C5
R3
R2
C1
RF
Input
C8
C7
C6
DUT
L1
C3
C2
C1, C2, C8 — Arco 463 or equivalent
C3 — 25pF, Unelco
C4 — 0.1uF, Ceramic
C5 — 1.0 uF, 15 WV Tantalum
C6 — 250pF, Unelco J101
C7– 25pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05uF, Ceramic
C11 — 15uF, 60WV Electrolytic
VRF150(MP)
Adding MP at the end of P/N specifies a matched pair where V
GS(TH)
is matched between the two parts. V
TH
values
are marked on the devices per the following table.
Code
A
Vth Range
Code 2
Vth Range
2.900 – 2.975
2.975 – 3.050
3.050 – 3.125
3.125 – 3.200
3.200 – 3.275
3.275 – 3.350
3.350 – 3.425
3.425 – 3.500
3.500 – 3.575
3.575 – 3.650
M
N
P
R
S
T
3.650 – 3.725
3.725 – 3.800
3.800 – 3.875
3.875 – 3.950
3.950 – 4.025
4.025 – 4.100
4.100 – 4.175
4.175 – 4.250
4.250 – 4.325
4.325 – 4.400
B
C
D
E
F
G
H
W
X
Y
Z
J
K
V
TH
values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
.5” SOE Package Outline
All Dimensions are ± .005
A
U
M
INCHES
MIN
MILLIMETERS
DIM
MAX
0.990
0.510
0.275
0.235
0.110
MIN
24.39
11.82
5.82
MAX
25.14
12.95
6.98
1
M
A
0.096
0.465
0.229
0.216
0.084
Q
4
B
C
R
B
D
E
H
J
5.49
5.96
2.14
2.79
PIN 1 – SOURCE
PIN 2 – GATE
0.144
0.003
0.435
0.178
0.007
3.66
0.08
11.0
4.52
0.17
2
3
PIN 3 – SOURCE
PIN 4 – DRAIN
D
K
M
Q
R
U
K
45° NOM
45° NOM
J
0.115
0.246
0.720
0.130
0.255
0.730
2.93
6.25
3.30
6.47
C
H
18.29
18.54
E
Seating Plane
VRF150(MP)
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TIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly
signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms
of such
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This document and the information contained herein may not be modified, by any person other than authorized personnel of
Microsemi. No
license under any patent, copyright, trade secret or other intellectual
property right is granted to or conferred upon you by disclosure or
delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any
license under such intellectual property rights must
be approved by Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice.
This product has
been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications.
Microsemi
assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including li-
ability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right.
Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other
testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or
parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to
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information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages
