MICRONE-Nanjing-Micro-One-Elec-MEM2310XG
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MEM2310
N-Channel MOSFET MEM2310X
General Description
Features
MEM2310XG Series N-channel enhancement mode
field-effect transistor ,produced with high cell density
DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly
suits low voltage applications, and low power
dissipation in a very small outline surface mount
package.
30V/5.8A
R
DS(ON)
=25mΩ@
V
GS
=10V, I
D
=5.8A
R
DS(ON)
=28mΩ@
V
GS
=4.5V, I
D
=5A
R
DS(ON)
=37mΩ@
V
GS
=2.5V, I
D
=4A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23
Pin Configuration
Typical Application
Battery management
High speed switch
Low power DC to DC converter
Absolute Maximum Ratings
Parameter
Symbol
V
DSS
Ratings
30V
±12
5.8
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
GSS
V
T
A
=25
℃
Drain Current
I
D
A
A
T
A
=70
℃
4.9
Pulsed Drain Current
1,2
I
DM
Pd
30
T
A
=25
℃
Total Power Dissipation
1.4
W
T
A
=70
℃
1
operating junction temperature
Storage Temperature Range
T
j
150
-65/150
℃
℃
T
stg
V6.0
1
MEM2310
Thermal Characteristics
Parameter
Symbol
RθJA
TYP.
65
MAX.
90
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance,Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance,Junction-to-Lead
Electrical Characteristics
MEM2310X
t≤10s
Steady-State
Steady-State
RθJA
85
125
60
RθJL
43
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V, I
D
=250uA
30
35
V
V
DS
= V
GS
, I
D
=250uA
V
DS
=0V
，
V
GS
=12V
V
DS
=0V
，
V
GS
=-12V
V
DS
=24V V
GS
=0V
V
GS
=10V, I
D
=5.8A
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
DS
= 5 V, I
D
= 5A
0.7
0.88
0.5
1.4
100
-100
1000
30
V
nA
nA
nA
mΩ
mΩ
mΩ
S
Gate-Body Leakage
-0.2
Zero Gate Voltage Drain Current
I
DSS
25
28
37
15
Static Drain-Source On-Resistance
R
DS(ON)
33
50
Forward Transconductance
Maximum Body-Diode Continuous
Current
g
FS
Is
10
2.5
1.0
A
V
Source-drain (diode forward) voltage
V
SD
V
GS
=0V,I
S
=1A
0.72
Dynamic Characteristics
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
823
99
1030
V
DS
= 15 V,
V
GS
= 0 V,
f = 1 MHz
pF
Reverse Transfer Capacitance
77
V
GS
=0V, V
DS
=0V,
f=1MHz
Gate resistance
Rg
1.2
3.6
14
Ω
Switching Characteristics
Turn-On Delay Time
td(on)
7
V
DD
= 15 V,
R
L
= 2.7Ω
V
GEN
= 10V,
Rg = 3 Ω
Rise Time
tr
td(off)
tf
15
38
3
30
76
ns
nc
Turn-Off Delay Time
Fall-Time
6
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
11
1.6
2.8
14.3
2.08
3.64
V
DS
= 15 V,
V
GS
= 4.5 V,
I
D
= 5.8A
Qgs
Qgd
1
、
Repetitive rating, pulse width limited by junction temperature.
2
、
Pulse width <300us , duty cycle <0.5%.
V6.0
2
MEM2310
The information described herein is subject to change without notice.
Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams
described herein whose related industrial properties, patents, or other rights belong to third parties.
The application circuit examples explain typical applications of the products, and do not guarantee the
success of any specific mass-production design.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Nanjing Micro One Electronics Inc is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any
apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro
One Electronics Inc.
Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality
and reliability, the failure or malfunction of semiconductor products may occur.
The user of these
products should therefore give thorough consideration to safety design, including redundancy,
fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community
damage that may ensue.
V6.0
7
