Mini-Circuits-AVA-183A-

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Mini-Circuits-AVA-183A-
WIDEBAND, MICROWAVE  
Monolithic Amplifier  
AVA-183A+  
50Ω  
5 to 18 GHz  
THE BIG DEAL  
y
Surface Mount Amplifier up to 18 GHz  
y
Integrated DC blocks, Bias-Tee & Microwave bypass capacitor  
y
Superior Value  
y
Suitable for low phase noise applications  
y
Gain, 13.8 dB typ. & Flatness,
 
1.2 dB  
y
Output Power, up to +19.0 dBm typ.  
y
Excellent isolation, 36 dB typ. at 12 GHz  
y
Single Positive Supply Voltage, +5V  
y
Unconditionally Stable  
Generic photo used for illustration purposes only  
CASE STYLE: DQ849  
y
Aqueous washable; 3mm x 3mm SMT package  
APPLIC
A
T
IONS  
y
Military EW and Radar  
y
DBS  
y
Wideband Isolation amplifier  
y
Microwave point-to-point radios  
y
Satellite systems  
PRODUCT OVERVIEW  
The AVA-183A+ is a surface mount, microwave amplifier fabricated using InGaAs PHEMT technology and is a fully integrated  
gain block up to 18 GHz.
 
It is packaged in Mini-Circuits industry standard 3×3 mm MCLP package, which provides excellent RF  
and thermal performance.
 
The AVA-183A+ integrates the entire matching network with the majority of the bias circuit inside  
the package, reducing the need for complicated external circuits.
 
This approach
 
makes the AVA-183A+ extremely flexible and  
enables simple, straightforward use.  
KEY FE
A
T
URES  
Feature  
Advantages  
Broad frequency range supports a wide array of applications from microwave radio and radar , to military communica-  
tions and countermeasures.  
Wideband, 5 to 18 GHz  
Typical 1.2
 
dB gain flatness across the entire frequency range minimizes the need for external equalizer networks mak-  
ing it a great fit for instrumentation and EW applications.  
Excellent Gain Flatness  
High Isolation  
With reverse isolation of 31-42 dB (17-23 dB directivity), the AVA-183A+ is an excellent choice for buffering broadband  
circuits. It
 
is an ideal LO driver amplifier and provides designers system flexibility and margin when integrating
 
cas-  
caded RF components.  
No hassle associated with amplifiers using dual supply; such as power supply sequencing. Integrated output bias-tee,  
simplifies layout & reduces cost.  
Single +5V Supply  
Manufacturability  
MSL1 and ESD Class1A (HBM) ratings minimize special handling on production lines.  
Ideal for low phase noise synthesizer applications  
Low additive phase noise, typically  
-151 dBc/Hz @10 KHz offset  
RE
V
. C  
ECOꢀ011155  
AVAꢀ183A+  
RS/TH/CP  
220727  

www.minicircuits.com

P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

PAGE 1 OF 5  

WIDEBAND, MICROWAVE  
Monolithic Amplifier  
AVA-183A+  
ELECTRICAL SPECIFICATIONS

(1)

AT 25°C, Z
o
=50Ω, (REFER TO CHARACTERIZATION CIRCUI
T
,
F
IG.1)  
Parameter  
Condition (GHz)  
Min.  
Typ.  
Max.  
Units  
Frequency Range  
DC Voltage (V

D1

, V

D2  

DC Current
(I

D1

+I

D2  

5.0  
18.0  
GHz  
V
mA  
)
)
5.0  
131  
12.9  
14.7  
14.0  
13.4  
13.1  
13.6  
12.4  
10.4  
17.0  
11.0  
11.0  
11.0  
11.0  
7.5  
104  
—
12.0  
12.0  
—
—
—
166  
—
—
—
—
—
—
—
5.0  
8.0  
10.0  
12.0  
14.0  
16.0  
18.0  
5.0  
Gain  
dB  
dB  
10.8  
8.0  
10.0  
12.0  
14.0  
16.0  
18.0  
5.0  
Input Return Loss  
8.0  
8.0  
18.0  
14.0  
11.0  
10.6  
11.2  
11.8  
32.2  
29.0  
27.7  
26.3  
25.1  
24.3  
24.4  
17.6  
18.0  
19.0  
19.0  
19.9  
19.6  
18.7  
7.4  
10.0  
12.0  
14.0  
16.0  
18.0  
5.0  
Output Return Loss  
dB  
8.0  
10.0  
12.0  
14.0  
16.0  
18.0  
5.0  
Output IP3

(2)  

dBm  
dBm  
dB  
—
—
16.0  
—
—
—
8.0  
10.0  
12.0  
14.0  
16.0  
18.0  
5.0  
Output Power @ 1 dB compression  
—
8.0  
4.3  
4.5  
4.8  
5.1  
5.1  
6.0  
10.0  
12.0  
14.0  
16.0  
18.0  
Noise Figure  
Additive Phase Noise  
5.0 GHz, 10KHz offset  
-151  
23.1  
0.046  
61  
dBc/Hz  
dB  
mA/°C  
°C/W  
Directivity (Isolation-Gain)  
DC Current Variation vs. Temperature

(3)  

Thermal Resistance  
12  
MAXIMUM R
A
T
INGS

(4)  

2500  
2000  
1500  
1000  
500  
Parameter  
Ratings  
-40°C to 85°C  
-55°C to 100°C  
150°C  
Operating Temperature
 

(5)  

Storage Temperature  
Channel Temperature  
DC Voltage (Pad 7,8)  
DC Voltage (Pads 2, 5)  
Power Dissipation  
+5.5 V  
+10 V  
980 mW  
180 mA  
DC Current (Pad 7+8)  
Input Power (CW)  
+20 dBm  
0
(1) Measured on Mini-Circuits Characterization test fixture TB-547-2+ See Characterization
T
e
st  
Circuit (Fig. 1)  
(2) At Pout=9dBm/tone  
(3) (Current at 85°C – Current at -45°C)/130  
Current (mA)  
(4) Permanent damage may occur if any of these limits are exceeded. These maximum ratings  
are not intended for continuous normal operation.  
(5) Defined with reference to ground pad temperature.  

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P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

PAGE 2 OF 5  

WIDEBAND, MICROWAVE  
Monolithic Amplifier  
AVA-183A+  
INTERMODUL
A
T
ION AND IP3 VS. FREQUENCY AND OUTPUT POWER  
AVA-183A+  
AVA-183A+  
IP3 vs. FREQUENCY and OUTPUT POWER  
THIRD ORDER INTERMODULATION vs. FREQUENCY and OUTPUT POWER  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
Pout  
-5 dBm  
Pout  
-5 dBm  
-3 dBm  
0 dBm  
3 dBm  
5 dBm  
8 dBm  
9 dBm  
10 dBm  
-3 dBm  
0 dBm  
3 dBm  
5 dBm  
8 dBm  
9 dBm  
10 dBm  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
CHARACTERIZATION TEST CIRCUIT  
Fig 1. Block Diagram of
T
e
st Circuit used for characterization.
 
(DUT soldered on  
Mini-Circuits Characterization
T
e
st Board TB-547-2+) Gain, Output power at 1dB  
compression (P1dB), Noise Figure, Output IP3 (OIP3) are measured using Agilent’s  
N5242A PNA-X microwave network analyzer.  
ML5  
C2  
ML6  
C1  
ML7  
+ Vs  
L1  
Conditions:  
1. Gain: Pin=-25 dBm  
2. Output IP3 (OIP3):
T
wo tones, spaced 1 MHz apart, 9 dBm/tone at output.  
3. Vs adjusted for 5.0V at device (VD1 and VD2), compensating loss of bias lines.  
ML2  
ML4  
C4  
ML1  
ML3  
C3  
8 (V

D1  

)
7 (V

D2  

5
)
RF-IN  
RF-OUT  
50
Ω
 
50
Ω  
2
1,6, Paddle  
TB-547-2+  
C1=5.6p
F
,
0
402 (NPO)  
C2=18p
F
,
0
402 (NPO)  
ML1-ML7 are short microstrip lines  
Refer to 98-PL-328  
C3=0.001µ
F
,
0
402 (NPO)  
C4=0.1 µ
F
,
0
402 (X7R)  
L1=3.3nH, 0805 (wire wound)  

www.minicircuits.com

P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

PAGE 3 OF 5  

WIDEBAND, MICROWAVE  
Monolithic Amplifier  
AVA-183A+  
RECOMMENDED APPLICATION CIRCUIT  
(refer to evaluation board for PCB Layout and component values)  
+ Vs  
ML5  
C2  
ML6  
ML7  
C1  
L1  
ML2  
ML4  
C4  
C3  
ML1  
ML3  
8
7
50
Ω
 
50
Ω  
2
5
RF-IN  
RF-OUT  
1,6, Paddle  
Fig 2. Recommended Application Circuit  
C1=5.6p
F
,
0
402 (NPO)  
C2=18p
F
,
0
402 (NPO)  
ML1-ML7 are short microstrip lines  
Refer to 98-PL-328  
C3=0.001µ
F
,
0
402 (NPO)  
C4=0.1 µ
F
,
0
402 (X7R)  
L1=3.3nH, 0805 (wire wound)  
PRODUCT MARKING  
black body  
MCL  
AVA1  
model family designation  
Marking may contain other features or characters for internal lot control  

www.minicircuits.com

P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

PAGE 4 OF 5  

WIDEBAND, MICROWAVE  
Monolithic Amplifier  
AVA-183A+  
ADDITIONAL DE
T
A
ILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS  
Data Table  
Performance Data  
Case Style  
Swept Graphs  
S-Parameter (S2P Files) Data Set (.zip file)  
DQ849 Plastic package, exposed paddle, lead finish: Matte-tin  
Tape & Reel  
F104  
Standard quantities available on reel  
7” reels with 20, 50, 100, 200, 500, 1000 or 2000 devices  
Suggested Layout for PCB Design  
Evaluation Board  
PL-328  
TB-547-2+  
ENV08T1  
Environmental Ratings  
ESD R
A
T
ING  
Human Body Model (HBM): 1A (250 to <500V) in accordance with ANSI/ESD STM 5.1 – 2001  
Machine Model (MM): M1 (25V) in accordance with ANSI/ESD STM5.2-1999  
MSL R
A
T
ING  
Moisture Sensitivity: MSL1 in accordance with IPC/JEDEC J-STD-020D  
MSL TEST FLOW CHART  
Visual  
Inspection  
Electrical  
T
e
st  
SAM  
Analysis  
Start  
Soak  
85°C/85RH  
168 hours  
Reflow 3 cycles  
260°C  
Bake at 125°C,  
24 hours  
Visual  
Inspection  
Electrical  
T
e
st  
SAM  
Analysis  
Finish  
NOTES  
A. Performance
 
and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.  
B. Electrical
 
specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.  
C. The
 
parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard
T
e
rms”); Purchasers of this part are entitled to the rights  

www.minicircuits.com

P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

PAGE 5 OF 5