Mini-Circuits-ERA-1SM-

Part #Mini-Circuits-ERA-1SM-
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Mini-Circuits-ERA-1SM-
Surface Mount  
Monolithic Amplifier  
DC-8 GHz  
Product Features  
• DC-8 GHz  
• Single Voltage Supply  
• Internally Matched to 50 Ohms  
• Unconditionally Stable  
• Low Performance Variation Over Temperature  
• Transient Protected  
• Aqueous washable  
• Protected By US Patent 6,943,629  
Generic photo used for illustration purposes only  
ERA-1SM+  
CASE STYLE:  
Typical Applications  
• Cellular/ PCS/ 3G Base Station  
• CATV, Cable Modem & DBS  
• Fixed Wireless & WLAN  
+RoHS Compliant  
The +Suffix identifies RoHS Compliance. See our web site  
for RoHS Compliance methodologies and qualifications  
• Microwave Radio & Test Equipment  
General Description  
ERA-1SM+ (RoHS compliant) is a
 
wideband amplifier offering high dynamic range.
 
It has repeatable per
–  
formance from lot to lot.
 
It is enclosed in a Micro-X package.
 
ERA-1SM+ uses Darlington configuration and  
is fabricated using InGaP HBT technology.
 
Expected MTTF is 5,800 years at 85°C case temperature.  
simplified schematic and pin description  
RF-OUT and DC-IN  
RF-OUT and DC-IN  
3
RF IN  
4
GND  
GND  
2
1
RF IN  
GROUND  
Function  
Pin Number  
Description  
RF input pin. This pin requires the use of an external DC blocking capacitor chosen  
for the frequency of operation.  
RF IN  
1
RF output and bias pin.
 
DC voltage is present on this pin; therefore a DC blocking  
capacitor is necessary for proper operation.
 
An RF choke is needed to feed DC bias  
without loss of RF signal due to the bias connection, as shown in “Recommended  
Application Circuit”.  
RF-OUT and DC-IN  
GND  
3
Connections to ground.
 
Use via holes as shown in “Suggested Layout for PCB  
Design” to reduce ground path inductance for best performance.  
2,4  
Notes  
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.  
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit
’
s
a
pplicable established test performance criteria and measurement instructions.  
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectivel
y
,
“
Standard
T
e
rms”); Purchasers of this part are entitled  
to the rights and benefits contained therein. For a full statement of the Standard
T
e
rms and the exclusive rights and remedies thereunde
r
,
p

REV. N  
ECO-009719  
ERA-1SM+  
®
Mini-Circuits  
210915  
Page 1 of 4  

www.minicircuits.com

P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

Monolithic InGaP HBT
 
MMIC Amplifier  
ERA-1SM+  
Electrical Specifications at 25°C and 40mA, unless noted  
Parameter  
Min.  
Typ.  
Max.  
Units  
Cpk  
Frequency Range*  
DC  
8
GHz  
Gain  
f=0.1 GHz  
f=1 GHz  
f=2 GHz  
f=3 GHz  
f=4 GHz  
f=6 GHz  
f=8 GHz  
f=0.1 GHz  
f=1 GHz  
f=2 GHz  
f=3 GHz  
f=4 GHz  
f=6 GHz  
f=8 GHz  
f=0.1 GHz  
f=2 GHz  
f=3 GHz  
f=4 GHz  
f=6 GHz  
f=8 GHz  
f=0.1 GHz  
f=2 GHz  
f=3 GHz  
f=4 GHz  
f=6 GHz  
f=8 GHz  
f=2 GHz  
f=0.1 GHz  
f=1 GHz  
f=2 GHz  
f=3 GHz  
f=4 GHz  
f=6 GHz  
f=8 GHz  
f=0.1 GHz  
f=2 GHz  
f=4 GHz  
f=6 GHz  
f=8 GHz  
f=0.1 GHz  
f=1 GHz  
f=2 GHz  
f=4 GHz  
f=0.1 GHz  
f=2 GHz  
f=4 GHz  
f=6 GHz  
f=8 GHz  
f=2 GHz  
11.4  
—
10.3  
—
—
—
—
—
—
—
12.3  
12.1  
11.8  
10.9  
9.7  
7.9  
8.2  
.0012  
.0015  
.0017  
.002  
.002  
.0022  
.0019  
30  
25  
23  
23  
18  
16  
26  
21  
16  
15  
15  
15  
17  
12  
12  
12  
12  
12  
10.5  
8
13  
13  
12.5  
11  
10  
28  
28  
12.9  
—
12.9  
—
—
—
dB  
≥ 1.5  
—
Magnitude of Gain Variation versus Temperature  
(values are negative)  
.0025  
.003  
.0035  
.004  
.004  
.005  
.005  
dB/°C  
—
—
—
—
Input Return Loss  
Output Return Loss  
dB  
dB  
Reverse Isolation  
Output Power @ 1 dB compression  
14  
—
—
10  
—
—
—
—
—
—
—
—
—
—
—
—
dB  
dBm  
≥ 1.33  
Saturated Output Power  
(at 3dB compression)  
dBm  
24  
24  
23  
20  
—
—
—
—
—
—
—
—
—
—
5
dBm  
dB  
≥ 1.33  
≥ 1.33  
Output IP3  
28  
25  
4.3  
4.3  
4.5  
4.9  
5.5  
70  
Noise Figure  
5.3  
5.5  
—
—
—
Group Delay  
psec  
mA  
Recommended Device Operating Current  
Device Operating Voltage  
40  
3.2  
3.4  
-2.0  
9.4  
183  
3.6  
V
≥ 1.5  
Device Voltage Variation vs. Temperature at 40mA  
Device Voltage Variation vs. Current at 25°C  
Thermal Resistance, junction-to-case

1  

mV/°C  
mV/mA  
°C/W  
*
Guaranteed specification DC-8 GHz.
 
Low frequency cut off determined by external coupling capacitors.  
Absolute Maximum Ratings  
Parameter  
Ratings  
Operating Temperature*  
Storage Temperature  
Operating Current  
Power Dissipation  
Input Power  
-45°C to 85°C  
-65°C to 150°C  
75mA  
330mW  
15dBm  
Note: Permanent damage may occur if any of these limits are exceeded.  
These ratings are not intended for continuous normal operation.  

1

Case is defined as ground leads.  
*Based on typical case temperature rise 5°C above ambient.  
Notes  
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.  
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit
’
s
a
pplicable established test performance criteria and measurement instructions.  
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectivel
y
,
“
Standard
T
e
rms”); Purchasers of this part are entitled  
to the rights and benefits contained therein. For a full statement of the Standard
T
e
rms and the exclusive rights and remedies thereunde
r
,
p

®
Mini-Circuits  

www.minicircuits.com

P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

Page 2 of 4  

ERA-1SM+  
Monolithic InGaP HBT
 
MMIC Amplifier  
Product Marking  
3
1
4
2
index over pin 1  
1
Markings in addition to model number designation may appear for internal quality control purposes.  
Additional Detailed Technical Information  
Additional information is available on our web site.
 
To access this information enter the model number on  
our web site home page.  
Performance data, graphs, s-parameter data set (.zip file)  
Case Style:
WW107  
Plastic micro-x, .085 body diameter, lead finish: Matte-Tin  
Tape & Reel:
F4  
7” Reels with 20, 50, 100, 200, 500, 1K devices  
Suggested Layout for PCB Design:
PL-075  
Evaluation Board:
TB-408-1+  
Environmental Ratings:
ENV08T2  
Recommended Application Circuit  
R BIAS  
R bias
 
(R equired)  
Vcc  
“1%” Res. Values (ohms)  
for Optimum Biasing  
Vcc  
C bypass  
7
8
9
90.9  
113  
137  
162  
187  
215  
237  
261  
287  
309  
332  
357  
383  
412  
Ibias  
3
4
2
R
F
C
 
(O
p
tional)  
OUT  
C block  
IN  
Vd  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
1
C block  
Test Board includes case, connectors, and components (in bold) soldered to PCB  
Notes  
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.  
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit
’
s
a
pplicable established test performance criteria and measurement instructions.  
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectivel
y
,
“
Standard
T
e
rms”); Purchasers of this part are entitled  
to the rights and benefits contained therein. For a full statement of the Standard
T
e
rms and the exclusive rights and remedies thereunde
r
,
p

®
Mini-Circuits  

www.minicircuits.com

P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

Page 3 of 4  

ERA-1SM+  
Monolithic InGaP HBT
 
MMIC Amplifier  
ESD Rating  
Human Body Model (HBM): Class 1B (500 v to < 1,000 v) in accordance with ANSI/ESD STM 5.1 – 2001  
Machine Model (MM): Class M1 ( < 100 v) in accordance with ESD STM 5.2 – 1999  
MSL Rating  
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020C  
No. Test
 
Required  
Condition  
Standard  
Quantity  
45 units  
45 units  
45 units  
45 units  
Low Power Microscope  
Magnification 40x  
MIP-IN-0003  
(MCT spec)  
1
2
3
4
Visual Inspection  
Electrical Test  
SAM Analysis  
SCD  
(MCL spec)  
Room Temperature  
Less than 10% growth in term of  
delamination  
J-Std-020C  
(Jedec Standard)  
Bake at 125°C for 24 hours  
Soak at 85°C/85%RH for 168 hours  
Reflow 3 cycles at 260°C peak  
Moisture Sensitivity  
Level 1  
J-Std-020C  
(Jedec Standard)  
MSL Test Flow Chart  
Visual  
Inspection  
Start  
Electrical Test  
SAM Analysis  
Soak  
85°C/85RH  
168 hours  
Reflow 3 cycles,  
Bake at 125°C,  
24 hours  
260°C  
Visual  
Inspection  
Electrical Test  
SAM Analysis  
Stop  
Notes  
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.  
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit
’
s
a
pplicable established test performance criteria and measurement instructions.  
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectivel
y
,
“
Standard
T
e
rms”); Purchasers of this part are entitled  
to the rights and benefits contained therein. For a full statement of the Standard
T
e
rms and the exclusive rights and remedies thereunde
r
,
p

®
Mini-Circuits  

www.minicircuits.com

P
.
O. Box 350166, Brooklyn, NY 11235-0003
 
(718) 934-4500
 

Page 4 of 4