Mini-Circuits-ERA-3-
| Part # | Mini-Circuits-ERA-3- |
Download  | Mini-Circuits-ERA-3- |
Drop-In
Monolithic Amplifier
DC-3 GHz
Product Features
• DC-3 GHz
• Single voltage supply
• Internally matched to 50 ohms
• Unconditionally stable
• Low performance variation over temperature
• Transient protected
Generic photo used for illustration purposes only
ERA-3+
• Aqueous washable
• Protected By US Patent 6,943,629
CASE STYLE: VV105
Typical Applications
• Cellular/ PCS/ 3G Base Station
• CATV, Cable Modem & DBS
• Fixed Wireless & WLAN
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
• Microwave Radio & Test Equipment
General Description
ERA-3+ (RoHS compliant) is a
wideband amplifier offering high dynamic range.
It has repeatable perfor-
mance from lot to lot.
It is enclosed in a Micro-X package.
ERA-3+ uses Darlington configuration and is
fabricated using InGaP HBT technology.
Expected MTTF is 10,000 years at 85°C case temperature.
simplified schematic and pin description
RF-OUT and DC-IN
RF-OUT and DC-IN
3
RF IN
4
GND
GND
2
1
RF IN
GROUND
Function
Pin Number
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF IN
1
RF output and bias pin.
DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation.
An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended
Application Circuit”.
RF-OUT and DC-IN
3
Connections to ground.
Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
GND
2,4
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit
’
s
a
pplicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectivel
y
,
“
Standard
T
e
rms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard
T
e
rms and the exclusive rights and remedies thereunde
r
,
p
lease visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
RE
V
. P
M164585
ERA-3+
200819
®
Mini-Circuits
Page 1 of 4
Monolithic InGaP HBT
MMIC Amplifier
ERA-3+
Electrical Specifications at 25°C and 35mA, unless noted
Parameter
Frequency Range*
Gain
Min.
Typ.
Max.
Units
Cpk
DC
3
GHz
dB
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=2 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=2 GHz
21
—
17.6
15.4
—
—
—
—
23.4
21
24.4
—
≥
1.5
18.7
16.4
0.0045
0.0051
0.0059
0.0064
30
19
18
18
21
17
17
17
24
12.5
12.1
12.5
10.5
13.6
13.3
13.1
12.1
27
20.7
18.5
0.009
0.010
0.012
0.013
dB/°C
dB
Magnitude of Gain Variation versus Temperature
(values are negative)
Input Return Loss
Output Return Loss
dB
Reverse Isolation
21
—
—
9
—
—
—
—
—
dB
dBm
≥
1.5
Output Power @ 1 dB compression
—
dBm
dBm
dB
Saturated Output Power
(at 3dB compression)
24
24
23
21
—
—
—
—
≥
1.5
≥
1.5
Output IP3
27
26
24
2.7
2.6
2.8
2.9
80
Noise Figure
Group Delay
psec
mA
V
Recommended Device Operating Current
Device Operating Voltage
35
3.2
3.0
3.4
≥
1.5
Device Voltage Variation vs. Temperature at 35mA
Device Voltage Variation vs. Current at 25°C
Thermal Resistance, junction-to-case
1
-2.3
3.6
181
mV/°C
mV/mA
°C/W
*
Guaranteed specification DC-3 GHz.
Low frequency cut off determined by external coupling capacitors.
Absolute Maximum Ratings
Parameter
Ratings
-45°C to 85°C
-65°C to 150°C
75mA
Operating
T
e
mperature*
Storage
T
e
mperature
Operating Current
Power Dissipation
Input Power
330mW
13dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1
Case is defined as ground leads.
*Based on typical case temperature rise 5°C above ambient.
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit
’
s
a
pplicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectivel
y
,
“
Standard
T
e
rms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard
T
e
rms and the exclusive rights and remedies thereunde
r
,
p
lease visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
®
Mini-Circuits
Page 2 of 4
Monolithic InGaP HBT
MMIC Amplifier
ERA-3+
Product Marking
3
4
3
2
index over pin 1
1
Markings in addition to model number designation may appear for internal quality control purposes.
Additional Detailed Technical Information
Additional information is available on our web site.
To access this information enter the model number on
our web site home page.
Performance data, graphs, s-parameter data set (.zip file)
Case Style: VV105
Plastic micro-x, .085 body diameter, lead finish: matte-tin
Tape & Reel:
F4
7” Reels with 20, 50, 100, 200, 500, 1K devices
Suggested Layout for PCB Design: PL-261
Evaluation Board: TB-431-3+
Environmental Ratings: ENV08T2
Recommended Application Circuit
R BIAS
R bias
(R equired)
Vcc
“1%” Res. Values (ohms)
for Optimum Biasing
Vcc
C bypass
7
8
9
107
133
162
191
221
251
280
309
340
365
392
422
453
475
Ibias
3
4
2
R
F
C
(O
p
tional)
OUT
C block
IN
Vd
1
10
11
12
13
14
15
16
17
18
19
20
C block
Test Board includes case, connectors, and components (in bold) soldered to PCB
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit
’
s
a
pplicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectivel
y
,
“
Standard
T
e
rms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard
T
e
rms and the exclusive rights and remedies thereunde
r
,
p
lease visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
®
Mini-Circuits
Page 3 of 4
Monolithic InGaP HBT
MMIC Amplifier
ERA-3+
ESD Rating
Human Body Model (HBM): Class 1A (250 v to < 500 v) in accordance with ANSI/ESD STM 5.1 – 2001
Machine Model (MM): Class M1 (< 100 v) in accordance with ANSI/ESD STM 5.2 – 1999
MSL Rating
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020C
No. Test
Required
Condition
Standard
Quantity
45 units
45 units
45 units
45 units
Low Power Microscope
Magnification 40x
MIP-IN-0003
(MCT spec)
1
2
3
4
Visual Inspection
Electrical Test
SAM Analysis
SCD
(MCL spec)
Room Temperature
Less than 10% growth in term of
delamination
J-Std-020C
(Jedec Standard)
Bake at 125°C for 24 hours
Soak at 85°C/85%RH for 168 hours
Reflow 3 cycles at 260°C peak
Moisture Sensitivity
Level 1
J-Std-020C
(Jedec Standard)
MSL Test Flow Chart
Visual
Inspection
Start
Electrical
T
e
st
SAM Analysis
Soak
85°C/85RH
168 hours
Reflow 3 cycles,
260°C
Bake at 125°C,
24 hours
Visual
Inspection
Electrical
T
e
st
SAM Analysis
Stop
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit
’
s
a
pplicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectivel
y
,
“
Standard
T
e
rms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard
T
e
rms and the exclusive rights and remedies thereunde
r
,
p
lease visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
®
Mini-Circuits
Page 4 of 4
