Mini-Circuits-GVA-62-
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FL
A
T
G
AIN, HIGH IP3
Monolithic Amplifier
GVA-62+
50Ω 0.01
to 6 GHz
THE BIG DEAL
y
Flat Gain,
0
.
ꢁ
d
B over 50-4000 MHz
y
Gain, 15.4 dB typ. at 2 GHz
y
High Pout,
P1dB 19.8 dBm typ. at 2 GHz
y
High IP3, 3
ꢁ
.
8 dBm typ. at 50 MHzꢀ 33.6 dBm at 2GHz
y
Excellent ESD protection, Class 1C for HBM
y
Ultra Flat Gain
Generic photo used for illustration purposes only
y
Broadband High Dynamic Range without external Matching Components
y
May be used as a replacement to RFMD SBB4089Z
a,b
CASE STYLE: DFꢁ82
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
FREE X-PARAMETERS*
APPLIC
A
T
IONS
y
Base station infrastructure
y
Portable Wireless
y
C
A
T
V & DBS
y
MMDS & Wireless LAN
y
L
T
E
PRODUCT OVERVIEW
GVA-62+ (RoHS compliant) is an wideband amplifier fabricated using InGap HBT technology and offers ultra flat gain over
a broad frequency range and with high IP3. In addition, the GVA-62+,
has good input and output return loss over a broad
frequency range without the need for external matching components and has demonstrated excellent reliability.
Lead finish is
SnAgNi. It has repeatable performance from lot to lot and is enclosed in a SOT-89 package for very good thermal performance.
KEY FE
A
T
URES
Feature
Advantages
Broadband covering primary wireless communications bands:
Cellular, PCS, LTE, WiMAX
Broad Band: 0.01 to 6.0 GHz
0.8 dB over 50 to 6000 MHzꢀ
0.20 dB over ꢁ00 to 2ꢁ00 MHz
eliminates need for gain flattening for most applications
Ultra Flat Gain, 15 dB
The GVA-62+ matches industry leading IP3 performance relative to device size and power consumption.
The
combination of the design and InGap HBT Structure provides enhanced linearity over a broad frequency range as
evidence in the IP3 being typically 20 dB above the P 1dB point to 0.8 GHz. This feature makes this amplifier ideal
for use in:
High IP3 vs. DC power Consumption
39 dBm typical at 0.05 GHz
3ꢁ dBm typical at 0.8 GHz
y
Driver amplifiers for complex waveform up converter paths
y
Drivers in linearized transmit systems
No External Matching Components
Required
GVA-62+ provides Input and Output Return Loss of 10-23 dB up to 3 GHz without the need for any external
matching components
*X-parameters is a registered trademark of Agilent
T
e
chnologies, Inc. The X-parameters format and underlying equations are open and documented.
A. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance
criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
B. The RFMD SBB-4089Z part number is used for identification and comparison purposes only.
RE
V
.
B
ECO-010563
GVA-62+
TH/RS/CP
211108
PAGE 1 OF 2
FL
A
T
G
AIN, HIGH IP3
Monolithic Amplifier
GVA-62+
ELECTRICAL SPECIFICATIONS
1,2
AT 25°C, UNLESS NOTED
Parameter
Condition (GHz)
Min.
Typ.
Max.
Units
Frequency Range
2
0.01
14.8
13.9
—
6
18.2
1ꢁ.2
—
GHz
0.05
0.8
16.5
15.6
15.4
15.3
15.0
14.5
0.ꢁ
2.0
Gain
dB
dB
dB
3.0
—
—
4.0
13.5
—
16.5
—
6.0
0.05 – 3.0
0.ꢁ – 2.6
0.05
0.8
Gain Flatness
0.2
—
10.0
—
16.5
13.ꢁ
13.9
15.9
19.3
20.ꢁ
12.8
1ꢁ.4
1ꢁ.1
15.0
12.4
8.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
Input Return Loss
3.0
—
4.0
—
6.0
—
0.05
0.8
—
12.0
—
2.0
Output Return Loss
dB
3.0
—
4.0
—
6.0
—
Reverse Isolation
2.0
—
21.9
19.ꢁ
19.8
19.2
1ꢁ.8
15.9
11.ꢁ
3ꢁ.8
3ꢁ.5
33.6
30.4
28.1
23.0
4.ꢁ
dBm
dBm
0.05
0.8
1ꢁ.5
1ꢁ.5
1ꢁ.2
—
2.0
Output Power at 1dB Compression
3.0
4.0
—
6.0
—
0.05
1.0
—
—
—
—
2.0
31.5
—
—
Output IP3
dB
dB
3.0
—
4.0
—
—
6.0
—
—
0.05
1.0
—
6.2
—
—
5.0
2.0
—
5.1
6.6
—
Noise Figure
3.0
—
5.1
4.0
—
5.2
—
6.0
—
5.6
—
Device Operating Voltage
4.8
ꢁ2
5.0
5.2
92
V
Device Operating Current
82
mA
Device Current Variation vs. Temperature
3
Device Current Variation vs. Voltage
Thermal Resistance, junction-to-ground lead
62
µA/°C
mA/mV
°C/W
0.035
64
(1) Measured on Mini-Circuits Characterization test board TB-313. See Characterization
T
e
st Circuit (Fig. 1)
(2) Low Frequency cut-off determined by external coupling capacitors and external bias choke.
(3) Current at 85°C — Current at -45°C)/130
PAGE 2 OF 2
FL
A
T
G
AIN, HIGH IP3
Monolithic Amplifier
GVA-62+
MAXIMUM R
A
T
INGS
60
50
40
30
20
10
0
Parameter
Operating Temperature
(ground lead)
Storage Temperature
Ratings
-40°C to 85°C
-65°C to 150°C
120 mA
Operating Current at 5V
Power Dissipation
0.ꢁ25 W
Input Power (CW)
24 dBm
DC Voltage on Pin 3
6V
Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
For continuous operation, do not exceed 5.2V device voltage.
DC Current (mA)
SIMPLIFIED SCHEM
A
T
IC AND PIN DESCRIPTION
3 RF-OUT
& DC-IN
2 GROUND
1 RF-IN
RF-OUT
RF-IN
and DC-IN
4
GND
Pin
Function
Description
Number
RF IN
1
3
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
RF-OUT
and DC-IN
RF output and bias pin.
DC voltage is present on this pinꢀ therefore a DC blocking capacitor is necessary for proper operation.
An RF choke
is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”, Fig. 2
Connections to ground.
Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path inductance for best
performance.
GND
2,4
A. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance
criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
B. The RFMD SBB4089Z part number is used for identification and comparison purposes only.
PAGE 3 OF 4
FL
A
T
G
AIN, HIGH IP3
Monolithic Amplifier
GVA-62+
CHARACTERIZATION TEST CIRCUIT
Vcc (Supply Voltage)
Fig 1. Block Diagram of
T
e
st Circuit used for characterization. (DUT
soldered on Mini-Circuits Characterization test board TB-313) Gain,
Return loss, Output power at 1dB compression (P1 dB) , output IP3
(OIP3) and noise figure measured using Agilent’s N5242A PNA-X
microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3):
T
wo tones, spaced 1 MHz apart, 0 dBm/tone
at output.
1
3 +5V
RF-OUT
RF-IN
2,4
DUT
BLK-18+
Bias
–
T
e
e
ZX85-12G-S+
TB-313
RECOMMENDED APPLICATION CIRCUIT
Vcc
Fig 2.
T
e
st Board includes case, connectors, and components
soldered to PCB
Cbypass
Ibias
4
RFC
Cblock
RF-IN
RF-OUT
3
Vd
1
Cblock
2
PRODUCT MARKING
V62
Marking may contain other features or characters for internal lot control
PAGE 4 OF 4
FL
A
T
G
AIN, HIGH IP3
Monolithic Amplifier
GVA-62+
ADDITIONAL DE
T
A
ILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS
Data Table
Performance Data
Swept Graphs
S-Parameter (S2P Files) Data Set (.zip file)
DFꢁ82 (SOT 89)
Plastic package, exposed paddle lead finish: Matte-tin
Case Style
Tape & Reel
F55
Standard quantities available on reel
ꢁ” reels with 20, 50, 100, 200, 500 or 1K devices
Suggested Layout for PCB Design
Evaluation Board
PL-255
TB-410-62+
ENV08T1
Environmental Ratings
ESD R
A
T
ING
HHuman Body Model (HBM): Class 1C (1000 to <2000V) in accordance with ANSI/ESD STM 5.1 – 2001
Machine Model (MM): Class M2 (100 to <200V) in accordance with ANSI/ESD STM5.2-1999
MSL R
A
T
ING
Moisture Sensitivity: MSL1 in accordance with IPC/JEDEC J-STD-020D
MSL TEST FLOW CHART
Visual
Inspection
Electrical
T
e
st
SAM
Analysis
Start
Soak
85°C/85RH
168 hours
Reflow 3 cycles
260°C
Bake at 125°C,
24 hours
Visual
Inspection
Electrical
T
e
st
SAM
Analysis
Finish
NOTES
A. Performance
and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical
specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The
parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard
T
e
rms”); Purchasers of this part are entitled to the rights
and benefits contained therein. For a full statement of the standard.
T
e
rms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
PAGE 5 OF 5
