Mini-Circuits-LHA-83W-
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U
L
T
RA HIGH DYNAMIC RANGE
LHA-83W+
Monolithic Amplifier
50Ω 50
MHz to 8 GHz
THE BIG DEAL
y
Ultra Wideband, 0.05 ꢀ 8GHz
y
Excellent Gain Flatness 16.8
2.ꢁdB Typ.
y
High Linearity, +23.3 dBm P1dB & +35.1 dBm OIP3
y
Robust ESD performance (Class 1B)
Generic photo used for illustration purposes only
CASE STYLE: DQ1225
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
APPLIC
A
T
IONS
y
WiFi
y
WLAN
y
L
T
E
y
WiMAX
y
Sꢀband Radar
y
CꢀBand Satcom
PRODUCT OVERVIEW
The LHAꢀ83W+ (RoHS compliant) is an advanced wideband amplifier fabricated using PHEMT technology and offers extremely
high dynamic range over a broad frequency range and with excellent gain flatness. In addition, the LHAꢀ83W+ has good input
and output return loss over a broad frequency range. LHAꢀ83W+ is enclosed in a 3x3mm, 12ꢀlead MCLP package and has very
good thermal performance.
KEY FE
A
T
URES
Feature
Advantages
Ultra Wideband: 50 MHz to 8 GHz
Broadband covering primary wireless communications bands
The LHAꢀ83W+ matches industry leading IP3 performance relative to device size and power consumption.
The combination of the design and PHEMT Structure provides enhanced linearity over a broad frequency
range as evidence in the IP3 being approximately 12 dB above the P1dB point. This feature makes this
amplifier ideal for use in:
Extremely High IP3
35.ꢁdBm typ. at 50 MHz
36.3 dBm typ. at 6 GHz
y
Driver amplifiers for complex waveform up converter paths
y
Drivers in linearized transmit systems
y
Secondary amplifiers in ultraꢀHigh Dynamic range receivers
Typical 2.ꢁ
dB gain flatness across the entire frequency range minimizes the need for external equalizer
networks making it a great fit for instrumentation and EW application.
Excellent Gain Flatness
RE
V
. A
ECO-011665
LHA-83W+
MCL NY
220222
PAGE 1 OF 5
U
L
T
RA HIGH DYNAMIC RANGE
LHA-83W+
Monolithic Amplifier
ELECTRICAL SPECIFICATIONS
1
AT 25°C, 50Ω, UNLESS NOTED OTHERWISE
V
DD
=9V
1
V
DD
=5V
1
Vs=9V
2
Vs=5V
2
Typ.
Condition
(MHz)
Parameter
Units
Min.
Typ.
Max.
Typ.
Typ.
Frequency Range
Gain
50
15
8000
18.ꢁ
18.3
18.3
18.ꢁ
50ꢀ8000
15.2
1ꢁ.8
1ꢁ.2
12.7
8.2
50ꢀ8000
16.ꢁ
16.ꢁ
16.ꢁ
16.3
12.5
1.95
15.9
17.1
20.1
22.3
2.8
50ꢀ8000
1ꢁ.8
1ꢁ.3
1ꢁ
MHz
50
2000
ꢁ000
6000
8000
50ꢀ8000
50
16.7
16.7
16.8
16.7
11.8
2.ꢁ
1ꢁ.9
1ꢁ.9
15
dB
dB
dB
12.7
8.5
Gain flatness
3.5
3.1
23.8
25.7
23.5
13.9
2.2
19.3
16.ꢁ
18.5
12.2
3.ꢁ
15.1
12.3
15.3
15.7
ꢁ.2
2000
ꢁ000
6000
8000
50
Input Return Loss
17.8
28.1
20.ꢁ
33.8
3.9
28.8
19.8
15.6
10.6
ꢁ.5
13.ꢁ
2ꢁ.8
22.ꢁ
20.ꢁ
5.7
18.1
15.1
19.7
13.ꢁ
5.8
2000
ꢁ000
6000
8000
50
Output Return Loss
dB
dBm
dBm
dB
23.6
23.8
23.3
22.2
17.5
35.ꢁ
35.7
35.1
36.3
30.6
3.2
15.9
16.3
16.1
15.8
12.2
23
23.2
22.8
23
15.5
15.2
15.5
16
2000
ꢁ000
6000
8000
50
Output Power @1dB compression
22.1
17
11.6
22.9
22.ꢁ
22.8
2ꢁ.3
19.7
2.8
35
2000
ꢁ000
6000
8000
50
23.5
22.9
22.7
19.5
2.8
3ꢁ.7
3ꢁ.ꢁ
35
Output IP3
(Pout = 0dBm/Tone)
30.6
3.3
2000
ꢁ000
6000
8000
2.7
2.5
2.8
2.6
Noise Figure
3.1
2.9
3.1
2.9
3.8
3.5
3.8
3.5
ꢁ.9
ꢁ.6
ꢁ.9
ꢁ.6
Device Operating Voltage
8.5
9
9.5
5
9
5
V
Device Operating Current
105
38.5
0.017
127
39.6
38.5
0.016
10ꢁ
38.5
0.017
39
mA
Device Current Variation vs. Temperature
3
Device Current Variation vs. Voltage
ꢁ
38.5
0.016
µA/°C
mA/mV
Thermal Resistance JunctionꢀToꢀGround Lead
at 85°C stage temperature
ꢁ1
ꢁ1
ꢁ1
ꢁ1
°C/W
1. Measured on MiniꢀCircuits Characterization
T
e
st Board TBꢀLHAꢀ83W+. See Characterization
T
e
st Circuit (Figure 1).
2. Measured on MiniꢀCircuits Application Evaluation Board TBꢀLHAꢀ83WE+. See Application
T
e
st Circuit (Figure 2).
3. Device Current Variation vs.
T
e
mperature= (Current at 85°C ꢀ Current at ꢀꢁ5°C)/130
ꢁ. Device Current Variation vs. Voltage = (Current at 9.5V ꢀ Current at 8.5V) / ((9.5Vꢀ8.5V)*1000 mV/V)
MAXIMUM R
A
T
INGS
4
Parameter
Operating temperature (ground lead)
Storage temperature
Ratings
ꢀꢁ0°C to 85°C
ꢀ65°C to 150°C
1.58W
Power dissipation
18 dBm (continuous)
2ꢁ dBm (5 minutes max)
Input power (CW)
DC voltage on Pin 5
10.5V
5.Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
PAGE 2 OF 5
U
L
T
RA HIGH DYNAMIC RANGE
LHA-83W+
Monolithic Amplifier
SIMPLIFIED SCHEM
A
T
IC AND PAD DESCRIPTION
NC NC NC
9
8
7
RF-OUT
and DC-IN
RF-IN
10
11
12
6
5
4
NC
RF-IN
NC
NC
RF-OUT & DC-IN
NC
GND
1
2
3
NC NC NC
Function
Pad Number
Description
RFꢀIN
11
5
RF input pin.
RFꢀOUT and DCꢀIN
RF Output and DC Bias
Connections to ground.
GND
NC
Paddle
1ꢀꢁ, 6ꢀ10 & 12
No connection, connected to ground externally on test board
CHARACTERIZATION TEST CIRCUIT
VDD
TB-LHA-83W+
11
5
RF-IN
RF-OUT
DUT
1-4,6-10, 12 &
Paddle
BLK-18+ (or DC
Block of PNA-X)
ZX85-12G-S+
(or Internal Bias
T
e
e
of PNA-X)
Fig 1. Block Diagram of
T
e
st Circuit used for characterization. (DUT soldered on MiniꢀCircuits Characterization test board TBꢀLHAꢀ83W+)
Gain, Return loss, Output power at 1dB compression (P1dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N52ꢁ2A PNAꢀX
microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= ꢀ25dBm
2. Output IP3 (OIP3):
T
wo tones, spaced 1 MHz apart, 0 dBm/tone at output.
PAGE 3 OF 5
U
L
T
RA HIGH DYNAMIC RANGE
LHA-83W+
Monolithic Amplifier
APPLIC
A
T
ION TEST CIRCUIT
VS
TB-LHA-83WE+
C4
C3
R1
Fig 2. Block Diagram of
T
e
st Circuit used for characterization. (DUT soldered on MiniꢀCircuits
Application test board TBꢀLHAꢀ83WE+)
Gain, Return loss, Output power at1dB compression (P1dB), output IP3 (OIP3) and noise figure
measured using Agilent’s N52ꢁ2A PNAꢀX
microwave network analyzer.
L1
C1
C2
RF-IN
RF-OUT
11
5
DUT
1-4,6-10, 12 &
Paddle
Conditions:
1. Gain and Return loss: Pin= ꢀ25dBm
2. Output IP3 (OIP3):
T
wo Tones spaced 1 MHz apart, 0 dBm/ tone at output.
PRODUCT MARKING
Index over pin
Black body
MCL
83W
Model family designation
Marking may contain other features or characters for internal lot control
PAGE ꢁ OF 5
U
L
T
RA HIGH DYNAMIC RANGE
LHA-83W+
Monolithic Amplifier
ADDITIONAL DE
T
A
ILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS
Data Table
Swept Graphs
Performance Data
DQ1225
Case Style
Plastic package, exposed paddle lead finish: MatteꢀTin
Tape & Reel
F66
Standard quantities available on reel
7” reels with 20, 50, 100, 200, 500, 1K, or 2K devices
Suggested Layout for PCB Design
Evaluation Board
PLꢀ660
TBꢀLHAꢀ83WE+
ENV08T1
Environmental Ratings
ESD R
A
T
ING
Human Body Model (HBM): Class 1B(500 to <1000V) in accordance with ANSI/ESD STM 5.1 ꢀ 2001
MSL FLOW CHART
Visual
Inspection
Electrical
T
e
st
SAM
Analysis
Start
Soak
85°C/85RH
168 hours
Reflow 3 cycles
260°C
Bake at 125°C,
24 hours
Visual
Inspection
Electrical
T
e
st
SAM
Analysis
Finish
NOTES
A. Performance
and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical
specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The
parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard
T
e
rms”); Purchasers of this part are entitled to the rights
and benefits contained therein. For a full statement of the standard.
T
e
rms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
PAGE 5 OF 5
