Mini-Circuits-PMA3-83MP-
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MEDIUM POWER, WIDEBAND, HIGH IP3
Monolithic Amplifier
PMA3-83MP+
50Ω 0.4
to 8 GHz
0.5W
THE BIG DEAL
y
High Pout, 0.5W to 2GHz
y
High IP3, 3
7
.
9 dBm Typ.
y
Low Noise Figure, 3.1dB Typ
y
Small 3×3 package
Generic photo used for illustration purposes only
y
Patent Pending
CASE STYLE: DQ1225
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
APPLIC
A
T
IONS
y
WiFi
y
WLAN
y
L
T
E/WCDMA/EDGE
y
L, S and C-band Radar
y
C-band Satcom
PRODUCT OVERVIEW
The PMA3-83MP+ is a GaAs PHEMT based wideband, low noise MMIC amplifier with a unique combination of low noise,
high IP3, and high output power, over a wideband making it ideal for sensitive, high-dynamic range receiver applications. This
design operates on a single supply of 8V, is well matched for 50Ω and comes in a tiny, low profile package (3 x 3 mm-12 lead),
accommodating dense circuit board layouts.
KEY FE
A
T
URES
Feature
Advantages
Low noise, 3dB Typical up to 8 GHz
Enables lower system noise figure performance.
High IP3
•
+39.5 dBm at 0.4 GHz
•
+37.9 dBm at 2 GHz
•
+39.0 dBm at 4 GHz
•
+38.6 dBm at 8 GHz
Combination of low noise and high IP3 makes this MMIC amplifier ideal for use in low noise receiver front end (RFE)
as it gives the user advantages of sensitivity and two-tone IM performance at both ends of the dynamic range.
VDD Operates over 5V to 8V
Allows the designer to tailor Pout and OIP3 via DC input for easier integration.
Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent
thermal contact to the PCB.
3 x 3mm 12-lead MCLP package
Wide bandwidth with flat gain
Enables a single amplifier to be used in many wideband applications including defense, instrumentation and
more.
•
•
1.5 dB over 4 to 7 GHz
2.0 dB over 0.4 to 8 GHz
RE
V
. B
ECOꢀ010881
PMA3ꢀ83MP+
MCLNY
211201
PAGE 1 OF 4
MEDIUM POWER, WIDEBAND, HIGH IP3
Monolithic Amplifier
PMA3-83MP+
ELECTRICAL SPECIFICATIONS
1
AT 25°C, 50Ω, UNLESS NOTED
VDD=8V & VIadj= 1.7V
Parameter
Condition (MHz)
Units
Max.
Min.
Typ.
Frequency range
400
8000
MHz
400
2000
4000
5000
8000
400
19.6
18.9
17.0
16.7
—
21.7
21.0
18.9
18.6
17.3
13.1
14.8
8.3
23.9
23.1
20.8
20.5
—
Gain
dB
2000
4000
5000
8000
400
Input Return loss
Output Return loss
P1dB
dB
dB
8.4
10.4
9.8
2000
4000
5000
8000
400
17.3
13.8
11.8
23.6
27.2
27.8
25.9
25.1
25.3
39.5
37.9
39.0
35.2
38.6
3.5
2000
4000
5000
8000
400
dBm
dBm
dB
2000
4000
5000
8000
400
OIP3
(Pout= 18dBm/Tone)
2000
4000
6000
8000
3.2
Noise Figure
3.2
3.0
3.3
Device operating voltage (VDD)
7.6
8.0
144
-50
8.4
V
Device operating current (IDD)
175
mA
Device current variation vs. temperature
2
Device current variation vs voltage
3
Thermal resistance, junction-to-ground Lead
µA/°C
mA/mV
°C/W
0.02
46.3
1. Measured on Mini-Circuits Characterization
T
e
st Board TB-PMA3-83MP+. See Characterization
T
e
st & Application Circuit (Fig. 1)
2. Device Current Variation vs.
T
e
mperature= (Current in mA at 85°C – Current in mA at -45°C)/130°C
3. Device Current Variation vs. Voltage = (Current in mA at 8.4V – Current in mA at
7
.
6V) / ((8.4V-
7
.
6V)*1000 mA/mV)
MAXIMUM R
A
T
INGS
4
Parameter
Ratings
Operating temperature (ground lead)
Storage temperature
-40°C to 85°C
-65°C to 150°C
150°C
Junction
T
e
mperature
T
o
tal power dissipation
1.4W
+22 dBm (5 minutes max.)
+
1
7
d
Bm (continuous)
Input power (CW)
DC voltage at VIadj
DC voltage at VDD
1.8V
9V
4. Permanent damage may occur if any of those limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
PAGE 2 OF 4
MEDIUM POWER, WIDEBAND, HIGH IP3
Monolithic Amplifier
PMA3-83MP+
SIMPLIFIED SCHEM
A
T
IC AND PAD DESCRIPTION
Pad
Number
TOP VIEW
Function
Description (
Fig 1
)
Iadj
RF-IN
2
Connects to RF input via C1
11
10
12
12
RF-OUT
&V
DD
RF-OUT
& VDD
Connects to RF out via C2 and
connects to V
DD
via L1
RF-IN
NC
RF-IN
NC
1
2
3
9
8
7
8
NC
2
8
RF-OUT & VDD
NC
1,3-
7
,
9-10 &11
Current Adjustment Pad.
Connects to VIadj
ladj
12
NC
Paddle
No
Connection
1,3-7,
9,10,11
Not used internally. Connected
to ground on Test Board
4
5
6
Connects to ground on Test
board.
Ground
Paddle
CHARACTERIZATION TEST & APPLICATION CIRCUIT
Fig 1. Application and Characterization Circuit
Note: This block diagram is used for characterization. (DUT is soldered on
Mini-Circuits Characterization test board TB-PMA3-83MP+)
VIadj
VDD
Gain, Return loss, Output power at 1dB compression (P1dB), output IP3
(OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave
network analyzer.
C7
C6
C5
Conditions:
1. VDD=8
V
,
V
Iadj = 1
.
7
V
2. Gain and Return loss: Pin= -25dBm
3. Output IP3 (OIP3)
:
T
wo tones, spaced 1 MHz apart, 18 dBm/tone at output.
L1
12
C1
RF-IN
RF-OUT
8
DUT
2
1,3
,
7
,
9-
11 &
Paddle
C4
C3
C2
PRODUCT MARKING
black body
model family designation
index over pin 1
MCL
83MP
Marking may contain other features or characters for internal lot control
PAGE 3 OF 4
MEDIUM POWER, WIDEBAND, HIGH IP3
Monolithic Amplifier
PMA3-83MP+
ADDITIONAL DE
T
A
ILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS
Data Table
Performance Data
Swept Graphs
S-Parameter (S2P Files) Data Set (.zip file)
Case Style
DQ1225 Plastic package, exposed paddle, lead finish: Matt Tin
Tape & Reel
F66
Standard quantities available on reel
Suggested Layout for PCB Design
Evaluation Board
7” reels with 20, 50, 100, 200, 500 or 2K devices
PL-706
TB-PMA3-83MP+
ENV08T1
Environmental Ratings
ESD R
A
T
ING
Human Body Model (HBM): Class 1A (250V) in accordance with ANSI/ESD STM 5.1 – 2001
MSL R
A
T
ING
Moisture Sensitivity: MSL1 in accordance with IPC/JEDEC J-STD-020D
MSL TEST FLOW CHART
Visual
Inspection
Electrical
T
e
st
SAM
Analysis
Start
Soak
85°C/85RH
168 hours
Reflow 3 cycles
260°C
Bake at 125°C,
24 hours
Visual
Inspection
Electrical
T
e
st
SAM
Analysis
Finish
NOTES
A. Performance
and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical
specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The
parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard
T
e
rms”); Purchasers of this part are entitled to the rights
and benefits contained therein. For a full statement of the standard.
T
e
rms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
PAGE 4 OF 4
