Mini-Circuits-TSY-173LN-
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MMIC, LOW NOISE, SHUTDOWN FEATURE
TSY-173LN+
Monolithic Amplifier
50Ω 13.5
to 17 GHz
THE BIG DEAL
y
Positive Gain Slope
y
Shutdown Feature
y
Excellent Noise Figure, 1.2dB Typ.
y
Built-In ESD Protection Circuits (Class 1C)
y
Low Current Operation, 13.2mA
Generic photo used for illustration purposes only
CASE STYLE: MC1630-1
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
APPLIC
A
T
IONS
y
Point to Point ODU System
y
Fixed Satellite
y
Radio Location
y
Mobile
PRODUCT OVERVIEW
The TS
Y
–
1
73LN+ is a GaAs E-PHEMT based low noise MMIC Amplifier with shutdown feature with a unique combination of low
noise ( 1.2dB
T
y
p.), and Low Current (13.2mA Typ.) It is suitable for receiver application. This design operates on a single supply
of 3V. It is well-matched to 50Ω and comes in a tiny, low profile package (2x2mm 6 Lead), accommodating dense circuit board
layouts.
KEY FE
A
T
URES
Feature
Advantages
Low noise, 1.2dB Typical from 13.5 – 17GHz
Enables lower system noise figure performance.
Positive Gain Slope vs. Frequency
+0.6 dB/GHz from 13.5 GHz to 15 GHz
+0.4 dB/GHz from 15 GHz to 17 GHz
Useful for compensating negative gain slope of most wideband microwave components and eliminating the
need for equalization.
Allow users to turn on and off the amplifier with pulsed signals while keeping the power supply at constant
voltage.
Shutdown Feature
Integrated DC Blocks and Bias-Tee
Small Size (2×2 mm 6L MCLP)
Saves motherboard space and minimizes overall cost. Very User Friendly.
Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excel-
lent thermal contact to the PCB.
RE
V
. A
ECO-011994
TS
Y
–
1
73LN+
MCL NY
220222
PAGE 1 OF 4
MMIC, LOW NOISE, SHUTDOWN FEATURE
TSY-173LN+
Monolithic Amplifier
ELECTRICAL SPECIFICATIONS
1
AT 25°C, 50Ω, UNLESS NOTED
Amplifier – ON
Typ.
Amplifier- OFF
Units
Parameter
Condition (GHz)
Min.
Max.
Typ.
Frequency range
Noise Figure
13.5
17
13.5-17
GHz
dB
13.5
14
1.2
1.2
—
—
15
1.1
—
16
1.2
—
17
1.2
—
13.5
14
14.2
15.1
15.2
15.6
16
17
18
-14.8
-14.7
-15.1
-15.6
-16.7
2.6
2.7
3.1
3.3
3.2
8.8
8.0
6.0
5.9
5.2
—
Gain
15
16.5
16.8
16.7
16.4
18.9
18.8
15.4
16.6
11.7
14.9
21.4
20.3
16
dB
dB
16
17
18.2
13.5
14
Input Return Loss
Output Return Loss
15
16
17
13.5
14
15
dB
16
17
13.5
14
9.3
9.4
—
Output P1dB
(AMP-ON)
15
8.7
—
dBm
dBm
16
8.4
—
17
6.6
—
13.5
14
22.4
22.9
24.2
21.9
21
—
—
Output IP3
(Pout = -10 dBm/Tone)
15
—
16
—
17
—
Device Operating Voltage(VDD)
Device Operating Current (IDD)
Control Voltage (VC)
2.75
2.25
3
3.25
19
3
V
mA
13.2
2.5
0.00012
2.75
0
0
V
Control Current (IC)
0.56
11.54
0.014
106.7
mA
DC Current (IDD) Variation Vs. Temperature
2
DC Current (IDD) Variation Vs. Voltage
3
Thermal Resistance
—
—
—
uA/degC
mA/mV
degC/W
1. Measured on Mini-Circuits Characterization
T
e
st Board TB
–
T
S
Y
–
1
73LN+. See Characterization
T
e
st & Application Circuit (Fig. 1)
2. Device Current Variation vs.
T
e
mperature= (Current in mA at 85°C – Current in mA at -45°C)/130°C
3. Device Current Variation vs. Voltage = (Current in mA at 3.25V – Current in mA at 2
.
7
5V) / ((3.25V-2
.
7
5V)*1000 mA/mV)
MAXIMUM R
A
T
INGS
4
Parameter
TRUTH
T
A
BLE + SWITCHING TIME SPECIFICATION
Ratings
-40°C to 85°C
-65°C to 150°C
130°C
VC
Min.
VC
Typ.
VC
Truth Table
Units
Max.
Operating temperature (ground lead)
Storage temperature
Junction Temperature
Total power dissipation
Input power (CW)
Amplifier- ON
2.25
2.5
0
2.75
0.2
V
V
Amplifier -OFF
Switching Time Parameter
OFF Time (50% Control to 10% RF)
FALL Time (90% RF to 10% RF)
ON Time (50% Control to 90% RF)
RISE Time (10% RF to 90% RF)
Min.
Typ.
13.7
8.8
Max.
Units
ns
0.42W
Amplifier
ON to OFF
+22 dBm
3V
ns
DC voltage at VC
52.4
38.8
0.64
1.45
ns
Amplifier
OFF to ON
DC voltage at VDD
8V
ns
4. Permanent damage may occur if any of those limits are exceeded. Electrical
maximum ratings are not intended for continuous normal operation.
Control Voltage Leakage (Rising Edge)
Control Voltage Leakage (Falling Edge)
mV
mV
PAGE 2 OF 4
MMIC, LOW NOISE, SHUTDOWN FEATURE
TSY-173LN+
Monolithic Amplifier
SIMPLIFIED SCHEM
A
T
IC AND PAD DESCRIPTION
Pad
Number
Function
VC
Description (Fig 1)
VC
1
VDD
Control Voltage Pad for
Shutdown (VC)
1
6
DUT
RF – IN
RF-OUT
VDD
3
4
RF Input Pad
Active
Bias
Circuit
RF Output Pad
6
DC Power Supply (VDD)
RF-IN
RF-OUT
3
4
No
Connection
Not used internally. Connected
to ground on Test Board
2 & 5
Paddle
Paddle
Ground
Soldered to Ground
CHARACTERIZATION TEST & APPLICATION CIRCUIT
VC VDD
Fig 1. Application and Characterization Circuit
Note: This block diagram is used for characterization. (DUT is soldered on Mini-
Circuits Characterization test board TB-TSY-173LN+)
Gain, Return loss, Output power at 1dB compression (P1dB), output IP3 (OIP3)
and noise figure measured using Agilent’s N5242A PNA-X microwave network
analyzer.
C1
C2
Conditions:
1. Gain and Return loss: Pin= -25dBm
1
6
2. Output IP3 (OIP3):
T
wo tones, spaced 1 MHz apart, -10 dBm/tone at output.
3. Switching Time: RF Signal: Pin = -10dBm, fRF =15GHz
VDD = 3
V
, VC = Pulse Signal at 100Hz with Vhigh =2.5V and Vlow =0V
& 50%
Duty Cycle.
4
RF-IN
RF-OUT
DUT
3
2,5
&PADDLE
Component
C1
C2
Size
0402
0402
Value
0.1uF
100pF
Part Number
GRM155R71C104KA88D
GRM1555C1H101JA01D
Manufacturer
Murata
Murata
PRODUCT MARKING
black body
model family designation
index over pin 1
MCL
173
Marking may contain other features or characters for internal lot control
PAGE 3 OF 4
MMIC, LOW NOISE, SHUTDOWN FEATURE
TSY-173LN+
Monolithic Amplifier
CLICK HERE
ADDITIONAL DE
T
A
ILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS
Data Table
Performance Data
Case Style
Swept Graphs
S-Parameter (S2P Files) Data Set (.zip file)
MC1630-1 Plastic package, exposed paddle, lead finish: Matt Tin
Tape & Reel
F66
Standard quantities available on reel
7” reels with 20, 50, 100, 200, 500 or 2K devices
Suggested Layout for PCB Design
Evaluation Board
PL-719
TB-TSY-173LN+ (Without Connectors)
TB-TSY-173LNC+ (With Connectors)
Environmental Ratings
ENV08T1
ESD R
A
T
ING
Human Body Model (HBM): Class 1C (1000V) in accordance with ANSI/ESD STM 5.1 – 2001
MSL R
A
T
ING
Moisture Sensitivity: MSL1 in accordance with IPC/JEDEC J-STD-020D
MSL TEST FLOW CHART
Visual
Inspection
Electrical
T
e
st
SAM
Analysis
Start
Soak
85°C/85RH
168 hours
Reflow 3 cycles
260°C
Bake at 125°C,
24 hours
Visual
Inspection
Electrical
T
e
st
SAM
Analysis
Finish
NOTES
A. Performance
and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical
specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The
parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard
T
e
rms”); Purchasers of this part are entitled to the rights
and benefits contained therein. For a full statement of the standard.
T
e
rms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
PAGE 4 OF 4
