Minos-2SA1837

Minos Silicon PNP Epitaxial Type  

Power Amplifier Applications  

① Complementary to 2SC4793  

② High collector voltage:VCEO=-230V (min)  

Note: Using continuously under heavy loads (e.g. the application  

of high temperature/current/voltage and the significant change  

in temperature, etc.) may cause this product to decrease in the  

reliability significantly even if the operating conditions (i.e.  

operating temperature/current/voltage, etc.) are within the  

Absolute maximum ratings.  

TO-220F  

Absolute Maximum

 

℃

):  

Characteristics  

Collector-base voltage  

Symbol  

Rating  

-230  

-230  

-5  

Unit  

V

V

CBO  

V

CEO  

V

EBO  

I

C  

Collector-emitter voltage  

Emitter-base voltage  

V

V

Collector current  

-1  

A

Base current  

I

B  

-0.2  

A

Collector power dissipation

 

(Tc=25

℃

)  

Junction temperature  

Storage temperature range  

P

C  

50  

W

℃

℃

T

j  

150  

T

STG  

-55~150  

Thermal Characteristics  

Symbol  

Paramter  

Junction-to-Case  

Typ  

Units  

℃

/W  

R

θJC  

3.0  

Electrical Characteristics

 

℃

):  

Characteristics  

Collector-Base Cut-off Current  

Emitter-Base Cut-off Current  

Collector-Emitter Breakdown Voltage  

DC current gain  

Symbol  

I

CBO  

Test Condition  

V

CB

=-230V,I

E

=0  

V

EB

=-5V,I

C

=0  

Min Typ Max  

Unit  

uA  

uA  

V

-1.0  

I

EBO  

-1.0  

V

CEO  

h

FE  

I

C

=-1mA  

-230  

I

C

=-0.1A; V

CE

=-5V  

I

C

=-0.5A; I

B

=-0.05A  

I

C

=-0.5A,I

B

=-0.05A  

V

CE

=-5V;I

C

=-0.5A  

V

CE

=-10V;I

C

=-100mA  

100  

300  

-0.5  

-1.4  

-1.5  

Collector-emitter saturation voltage  

Base-Emitter Saturation Voltage  

Base-emitter voltage  

V

CEsat  

V

BEsat  

V

BE  

V

V

V

Transition frequency  

f

T  

40  

MHz  

Package Information  

TO-220F PACKAGE  

Dimensions

（

millimeters

）  

Symbol  

Min  

4.35  

2.30  

0.40  

2.10  

0.60  

1.00  

0.30  

2.30  

9.80  

6.30  

15.6  

8.80  

12.9  

3.10  

3.10  

3.10  

Max  

4.75  

2.70  

0.80  

2.50  

1.00  

1.40  

0.70  

2.70  

10.2  

6.70  

16.0  

9.20  

13.5  

3.50  

3.50  

3.50  

A

A1  

A2  

A3  

b

b1  

c

e

E

E1  

H

H1  

H2  

H3  

G

φP  

NOTE:  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device,  

even the permanent failure, which may affect the dependability of the machine. Please do not  

exceed the absolute maximum ratings of the device when circuit designing.  

2.

When installing the heat sink, please pay attention to the torsional moment and the smoothness of  

the heat sink.  

3.

MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device  

from being damaged by the static electricity when using it.  

4.

Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to  

change withoutprior notice.  

CONTACT:  

深圳市迈诺斯科技有限公司（总部）  

地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C  

邮编：518025  

电话：0755-83273777