Minos-IRF640
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IRF640
Power MOSFET
1
．
Description
IRF640, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and
general purpose applications.
KEY CHARACTERISTICS
Parameter
V
DS
I
D
Value
200
18
Unit
V
A
R
DS(ON).Typ
FEATURES
0.13
Ω
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes
IRF640
Package
TO-220
Product Code
IRF640
Packing
Tube
IRF640
XXXX
：
Product Code
(2) Package
type
(1) Chip
name
XXXX
YYWW ZZ
YYW
W
：
Year&Week
ZZ
：
Assembly Code
(1)IRF640:200V 18A
(2) TO-220
IRF
64
0
S
HENZHEN MINOS TECHNOLOGY CO.,LTD
Rev 1.0
12/2019
IRF640
Power MOSFET
2
．
ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter
Rating
Units
Drain-to-Source Voltage
V
DSS
200
18
V
A
Continuous Drain Current
I
D
Continuous Drain Current T
C
= 100 °C
11
A
Pulsed Drain Current(Note1)
I
DM
72
A
Gate-to-Source Voltage
V
GS
±30
580
5.0
V
Single Pulse Avalanche Energy(Note2)
E
AS
mJ
V/ns
Peak Diode Recovery dv/dt(Note3)
dv/dt
Power Dissipation
TO-220, TO-251,TO-252
130
W
W/
℃
W
P
D
Derating Factor above 25°C
1.2
Power Dissipation
TO-220F
42
0.33
P
D
Derating Factor above 25°C
W/
℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，
T
stg
150
，
–
55 to 150
300
T
L
℃
3
．
Thermal characteristics
Thermal characteristics (No FullPAK) TO-220TO-251TO-252
Symbol Parameter
RATINGS
Units
Junction-to-Case
R
θJC
0.84
62.5
℃
/W
℃
/W
Junction-to-Ambient
R
θJA
Thermal characteristics (FullPAK) TO-220F
Symbol Parameter
RATINGS
3.0
Units
℃
/W
℃
/W
Junction-to-Case
R
θJC
Junction-to-Ambient
R
θJA
62.5
IRF
64
0
S
H
EN
ZH
EN MINOS TE
CH
NOLO
GY C
O.
,
LTD
Rev 1.0
12/2019
IRF640
Power MOSFET
4
．
Electrical Characteristics
at T
C
= 25°C, unless otherwise specified
OFF Characteristics
Values
Typ.
Test
Conditions
Symbol
V
DSS
Parameter
Units
V
Min.
Max.
Drain to Source Breakdown
Voltage
V
GS
=0V,
I
D
=250µA
200
—
—
ΔBV
DSS
/Δ
T
J
ID=250uA,
Reference25
℃
Bvdss Temperature
Coefficient
V/
℃
—
—
0.25
—
1
V
DS
=200V,
V
GS
= 0V,
Tj = 25
℃
µA
µA
—
—
Drain to Source Leakage
Current
I
DSS
V
DS
=160V,
V
GS
= 0V,
Tj = 125
℃
—
100
Gate to Source Forward
Leakage
Gate to Source Reverse
Leakage
V
GS
=+30V
V
GS
=-30V
nA
nA
I
GSS(F)
I
GSS(R)
—
—
—
—
100
-100
ON Characteristics
Values
Typ.
Symbol
Parameter
Test Conditions
Units
Min.
Max.
Drain-to-Source On-
Resistance
VGS=10V,
ID=7.5A(Note4)
R
DS(ON)
V
GS(TH)
g
fs
— 0.13
0.18
Ω
V
S
VDS = VGS,
ID = 250µA(Note4)
Gate Threshold Voltage
2.0
—
—
4.0
—
VDS=15V,
ID =9A(Note4)
Forward Transconductance
12
Dynamic Characteristics
Values
Typ.
Symbol
Parameter
Test Conditions
Units
Min.
Max.
Gate resistance
f = 1.0MHz
R
g
—
2
—
Ω
Input Capacitance
Output Capacitance
C
iss
C
oss
— 1320 —
VGS = 0V
VDS = 25V
f = 1.0MHz
—
—
450
130
—
—
PF
Reverse Transfer
Capacitance
C
rss
IRF
640
S
H
EN
ZH
EN MINOS TE
CH
NOLO
GY C
O.
,
LTD
Rev 1.0
12/2019
IRF640
Power MOSFET
Switching Characteristics
Values
Typ.
Symbol
Parameter
Test Conditions
Units
ns
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
T
r
t
d(OFF)
t
f
15
52
46
37
23
8
ID =18A
—
—
VDD = 100V
VGS = 10V
RG =2
0Ω
Turn-Off Delay Time
Fall Time
—
—
—
—
Total Gate Charge
Gate to Source Charge
Gate to Drain
(“Miller”)Charge
Q
g
—
—
ID =18A
VDD =160V
VGS = 10V
Q
gs
Q
gd
—
—
nC
—
6
—
Source-Drain Diode Characteristics
Values
Typ.
Test
Conditions
Symbol
Parameter
Units
Min.
—
Max.
18
Continuous Source Current (Body
Diode)
Maximum Pulsed Current (Body
Diode)
I
S
—
—
A
A
TC=25 °C
I
SM
—
72
IS=18A,
VGS=0V(Note4)
IS=18A,
Tj = 25°C
Diode Forward Voltage
Reverse Recovery Time
V
SD
T
rr
—
—
—
1.2
—
V
350
ns
dIF/dt=100A/us,
VGS=0V
Reverse Recovery Charge
Q
rr
— 3600 —
nC
Note1: Pulse width limited by maximum junction temperature
Note2: L=2.7mH, VDs=50V, Start TJ=25
℃
Note3: ISD =18A
,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25
℃
Note4:
Pulse width tp≤300µs, δ≤2%
IRF
6
40
S
H
EN
ZH
EN MINOS TE
CH
NOLO
GY C
O.
,
LTD
Rev 1.0
12/2019
IRF640
Power MOSFET
Figure 6 Typical Drain to Source ON Resistance
vs Drain Current
Figure 7 Typical Drian to Source on Resistance
vs Junction Temperature
Figure 8 Typical Theshold Voltage vs Junction
Temperature
Figure 9 Typical Breakdown Voltage vs Junction
Temperature
IRF
64
0
S
H
EN
ZH
EN MINOS TE
CH
NOLO
GY C
O.
,
LTD
Rev 1.0
12/2019
IRF640
Power MOSFET
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the
device from being damaged by the static electricity when using it.
4.
Shen
zhen Minos
reserves the right to make changes in this specification sheet and is subject to
change without prior notice.
CONTACT:
深圳
市迈诺斯科技
有限公司（总部）
地
址：深圳市福田区华富街道田面社区深南中路
4026
号田面城市大厦
22
B
-22
C
电话：
0755
—
83273777
IRF
640
Rev 1.0
12/2019
