Minos-IRF9540
| Part # | Minos-IRF9540 |
Download  | Minos-IRF9540 |
Silicon P-Channel Power MOSFET
Description
The IRF9540 uses advanced technology and design to provide
excellent R
DS(ON)
. It can be used in a wide variety of applications.
General Features
① V
DS
=-110V, I
D
=-35A
② Low
ON Resistance
Schematic diagram
③ Low
Reverse transfer capacitances
④ 100%
Single Pulse avalanche energy Test
Application
① Power switching application
②
Adapter and charger
Electrical Characteristics
TO-220
@ Ta=25
℃
(unless otherwise specified)
Package Marking And Ordering Information
Ordering Codes
Package
Product Code
Packing
IRF9540
TO-220
IRF9540
Tube
Absolute Maximum Ratings:
Symbol
V
DSS
I
D
Parameter
Drain-to-Source Breakdown Voltage
Value
-110
-35
Units
V
A
Drain Current (continuous) at Tc=25
℃
Drain Current (pulsed)
Gate to Source Voltage
I
DM
-120
+/-20
180
A
V
W
℃
mJ
V
GS
P
tot
T
j
Total Dissipation at Tc=25
℃
Max. Operating Junction Temperature
Single Pulse Avalanche Energy
175
E
AS
700
Electrical Parameters:
Symbol
Parameter
Drain-source Voltage
Test Conditions
Min
Typ
Max
Unit
V
DS
V
GS
=0V, I
D
=-250
µ
A
-100
V
Static
on-Resistance
Drain-to-Source
R
DS(on)
V
GS
=-10V, I
D
=-15A
26
32
mΩ
V
GS(th)
I
DSS
Gated Threshold Voltage
-1.0
-2.0
-3.0
-1.0
100
-100
V
V
DS
=V
GS,
I
D
=-250
µ
A
V
DS
=-110V, V
GS
= 0V
V
GS
= +20V
Drain to Source leakage Current
Gated Body Foward Leakage
Gated Body Reverse Leakage
µA
nA
nA
I
GSS(F)
I
GSS(R)
V
GS
= -20V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2315
190
11
pF
pF
pF
V
GS
=0V,
V
DS
=25V,
f=1.0MHZ
Switching Characteristics
Symbol
Parameter
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min
Typ
28
21
62
32
40
9.2
14
Max
Unit
nS
t
d(on)
t
r
t
d(off)
t
f
nS
V
DD
=-20V,I
D
=-16A,
R
G
=10Ω
nS
nS
Q
g
nC
nC
nC
V
DS
=-20V
I
D
=-16A
V
GS
=-10V
Q
gs
Q
gd
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
-35
Unit
A
I
SD
S-D Current(Body Diode)
Pulsed S-D Current(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SDM
V
SD
t
rr
-140
-1.5
555
A
V
GS
=0V, I
DS
=-35A
V
nS
µC
T
J
=25
℃
,I
F
=-35A
di/dt=100A/us
Q
rr
4550
*Pulse Test: Pulse Width <= 300
µ
s, Duty Cycle< =2%
Symbol
R
θJC
Parameter
Typ
2.5
Units
℃
/W
Junction-to-Case
Package Description
Values(mm)
Items
MIN
MAX
A
9.60
10.6
B
B1
C
15.0
8.90
4.30
2.30
1.20
0.70
0.30
1.17
2.70
12.6
2.34
2.40
3.50
16.0
9.50
4.80
3.10
1.40
0.90
0.60
1.37
3.80
14.8
2.74
3.00
3.90
C1
D
E
F
G
H
L
N
Q
TO-220 package
NOTE:
Exceeding the maximum ratings of the device in performance may cause damage to the device, even the
permanent failure, which may affect the dependability of the machine. Please do not exceed the
absolute maximum ratings of the device when circuit designing.
1.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
2.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
3.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
