Minos-IRFP240
| Part # | Minos-IRFP240 |
Download  | Minos-IRFP240 |
Description
IRFP240, the silicon N-channel Enhanced MOSFETs, is
obtained by advanced MOSFET technology which reduce the
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor is suitable device for SMPS,
high speed switching and general purpose applications.
KEY CHARACTERISTICS
Parameter
V
DS
Value
200
18
Unit
V
I
D
A
R
DS(ON).Typ
0.13
Ω
FEATURES
① Fast Switching
② Low Crss
③ 100% avalanche tested
④ Improved dv/dt capability
⑤ RoHS product
APPLICATIONS
High frequency switching mode power supply
TO-247
ORDERING INFORMATION
Ordering Codes
Package
TO-247
Product Code
Packing
IRFP240
IRFP240
Tube
ABSOLUTE RATINGS at TC = 25°C, unless otherwise specified
Symbol
Parameter
Rating
Units
Drain-to-Source Voltage
V
DSS
200
18
V
A
Continuous Drain Current
I
D
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current(Note1)
Gate-to-Source Voltage
11
A
I
DM
72
A
V
GS
±30
580
5.0
V
Single Pulse Avalanche Energy(Note2)
Peak Diode Recovery dv/dt(Note3)
E
AS
mJ
V/ns
dv/dt
Power Dissipation
TO-220, TO-251,TO-252
130
1.2
W
P
D
Derating Factor above 25°C
W/
℃
Power Dissipation TO-220F
P
D
42
W
Derating Factor above 25°C
0.33
W/
℃
T
J
，
T
stg
150
，
–55 to 150
Operating Junction and Storage Temperature
Range
Maximum Temperature for
Soldering
℃
℃
T
L
300
Thermal characteristics
Thermal characteristics (No FullPAK) TO-220TO-251TO-252
Symbol
R
θJC
Parameter
RATINGS
0.84
Units
Junction-to-Case
Junction-to-Ambient
℃
/W
℃
/W
R
θJA
62.5
Thermal characteristics (FullPAK) TO-220F
Symbol
R
θJC
Parameter
RATINGS
3.0
Units
℃
/W
℃
/W
Junction-to-Case
Junction-to-Ambient
R
θJA
62.5
Electrical Characteristics at TC = 25°C, unless otherwise specified
OFF Characteristics
Values
Test Conditions
Symbol
Parameter
Units
Min.
Typ.
Max.
V
GS
=0V, I
D
=250µA
V
V
DSS
200
—
—
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
I
D
=250uA,
Reference25
℃
V/
℃
ΔBV
DSS
/Δ T
J
—
—
0.25
—
—
1
V
DS
=200V,
V
GS
= 0V,
T
j
= 25
℃
µA
µA
I
DSS
V
DS
=160V,
V
GS
= 0V,
T
j
= 125
℃
Drain to Source Leakage Current
—
—
100
V
GS
=+30V
V
GS
=-30V
nA
nA
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
I
GSS(F)
I
GSS(R)
—
—
—
—
100
-100
ON Characteristics
Values
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
Max.
V
GS
=10V, I
D
=7.5A(Note4)
R
DS(ON)
V
GS(TH)
g
fs
—
0.13
—
0.18
Ω
V
S
Drain-to-Source On- Resistance
V
DS
= V
GS
,
I
D
= 250µA(Note4)
2.0
—
4.0
—
Gate Threshold Voltage
V
DS
=15V,
I
D
=9A(Note4)
12
Forward Transconductance
Dynamic Characteristics
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
Max.
—
f = 1.0MHz
R
g
Gate resistance
2
Ω
C
iss
C
oss
Input Capacitance
—
1320
—
V
GS
= 0V
V
DS
= 25V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
—
450
130
—
PF
C
rss
—
—
Switching Characteristics
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
15
52
46
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
T
r
I
D
=18A
V
DD
= 100V
V
GS
= 10V
R
G
=20Ω
—
—
ns
Turn-Off Delay Time
t
d(OFF)
—
—
Fall Time
t
f
Q
g
—
—
37
23
—
—
Total Gate Charge
ID =18A
VDD =160V
VGS = 10V
Gate to Source Charge
Q
gs
Q
gd
—
—
8
6
—
—
nC
Gate to Drain
(“Miller”)Charge
Source-Drain Diode Characteristics
Values
Test Conditions
Symbol
Parameter
Units
Min.
—
Typ.
Max.
18
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
I
S
—
—
A
A
T
C
=25 °C
I
SM
—
72
I
S
=18A, V
GS
=0V(Note4)
V
SD
T
rr
—
—
—
1.2
—
V
Diode Forward Voltage
Reverse Recovery Time
I
S
=18A,
T
j
= 25°C
350
ns
d
IF
/d
t
=100A/us, V
GS
=0V
Q
rr
—
3600
—
nC
Reverse Recovery Charge
Note1: Pulse width limited by maximum junction temperature
Note2: L=2.7mH, VDs=50V, Start TJ=25
℃
Note3: ISD =18A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25
℃
Note4: Pulse width tp≤300µs, δ≤2%
Characteristics Curves
Figure 1a Safe Operating Area (No FullPAK)
Figure 1b Safe Operating Area (FullPAK)
Figure 2a Power Dissipation (No FullPAK)
Figure 2b Power Dissipation (FullPAK)
Figure 3a Max Thermal Impendance (No FullPAK)
Figure 3b Max Thermal Impendance (FullPAK)
Figure 4 Typical Output Characteristics
Figure 5 Typical Transfer Characteristics
Figure 6 Typical Drain to Source ON Resistance vs Drain
Figure 7 Typical Drian to Source on Resistance vs Junction
Current
Temperature
Figure 8 Typical Theshold Voltage vs Junction
Temperature
Figure 9 Typical Breakdown Voltage vs Junction
Temperature
Test Circuit and Waveform
Figure 12 Gate Charge Test Circuit
Figure 13 Gate Charge Waveforms
Figure 14 Resistive Switching Test Circuit
Figure 15 Resistive Switching Waveforms
Figure 16 Diode Reverse Recovery Test Circuit
Figure 17 Diode Reverse Recovery Waveform
Figure 18 Unclamped Inductive Switching Test Circuit
Figure 19 Unclamped Inductive Switching Waveform
Package Description
values
（
mm
）
Items
MIN
4.6
MAX
5.2
A
A1
B
2,2
2.6
0.9
1.4
B1
B2
B3
B4
C
1.75
1.75
2.8
2.35
2.15
3.35
3.15
0.7
2.8
0.5
D
20.60
16
21.30
18
D1
E
15.5
13
16.10
14.7
5.3
E1
E2
E3
e
3.80
0.8
2.60
5.7
5.2
L
19
20.5
4.6
L1
3.9
ΦP
2.5
3.70
Q
S
5.2
5.8
6.00
6.6
TO-247 Package
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
