Minos-IRFZ44N

Green Product  

IRFZ44N  

60V N-Channel Power MOSFET  

KEY CHARACTERISTICS  

●

V

DS

= 60

V

,

I

D

= 60A  

DESCRIPTION  

The IRFZ44N uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge. It can be used in a wide  

variety of applications.  

R

DS(ON)

< 15

mΩ @ V

GS

=10V  

●

High density cell design for lower Rdson  

●

Fully characterized avalanche voltage and current  

●

Good stability and uniformity with high EAS  

●

Excellent package for good heat dissipation  

100% UIS TESTED

！

 

Application  

●

Power switching application  

●

Hard switched and High frequency circuits  

●

Uninterruptible power supply  

100% DVDS TESTED

！  

TO-220 Top View  

Schematic diagram  

Package Marking And Ordering Information  

Device Marking  

Ordering Codes  

Package  

Product Code  

Packing  

IRFZ44N  

IRFZ44N  

TO-220  

IRFZ44N  

Tube  

Absolute Maximum Ratings (T

A

=25

℃

 

unless otherwise noted)  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

Limit  

60  

Unit  

V

V

Gate-Source Voltage  

±20  

V

GS  

Drain Current-Continuous  

60  

A

I

D  

Drain Current-Pulsed

(Note 1)  

200  

A

I

DM  

87  

W

mJ  

℃

Maximum Power Dissipation(Tc=25

℃

)  

Single pulse avalanche energy

(Note 2)  

Operating Junction and Storage Temperature Range  

P

D  

120  

E

AS  

-55

T

o

1

75  

T

J

,T

STG  

Thermal Characteristic  

SHENZHEN MINOS TECHNOLOGY CO.,LTD  

Green Product  

IRFZ44N  

Thermal Resistance,Junction-to-Case  

R

θJ

C  

1.72  

℃

/W  

Electrical Characteristics (TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ Max Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250μA  

V

DS

=60V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

60  

–

–

–

–

–

1

V

μA  

nA  

I

GSS  

–

±100  

Gate Threshold Voltage  

Drain-Source On-State Resistance

(Note 3)  

Forward Transconductance  

Dynamic Characteristics  

Input Capacitance  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V, I

D

=25A  

V

DS

=25V,I

D

=25A  

2

–

3

4

15  

–

V

mΩ  

S

12  

25  

–

C

lss  

C

oss  

C

rss  

–

–

–

910  

100  

30  

–

–

–

pF  

pF  

pF  

V

DS

=25V,V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

26  

6

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=30V, ID=20A,  

V

GS

=10V,R

GEN

=5

Ω  

Turn-Off Delay Time  

52  

7

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

–

–

–

31  

9

V

DS

=30V,I

D

=50A  

V

GS

=10V  

Gate-Source Charge  

Gate-Drain Charge  

5

Drain-Source Diode Characteristics  

Diode Forward Voltage  

V

SD  

V

GS

=0V,I

S

=50A  

–

–

1.2  

V

Notes:  

1. Repetitive Rating: Pulse width limited by maximum junction temperature.  

2. E

AS

condition :T

j

=25

℃

,V

DD

=30V,V

GS

=10V,L=0.5mH,Rg=25

Ω

 

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production.  

SHENZHEN MINOS TECHNOLOGY CO.,LTD  

Green Product  

IRFZ44N  

Characteristics Curves  

Figure 1 Output Characteristics  

Figure 2 Transfer Characteristics  

Figure 3 On-Resistance vs. I

D

and V

GS  

Figure 4 On-Resistance vs. Junction Temperature  

Figure 5 On-Resistance vs. V

GS  

Figure 6 Body Diode Forward Voltage  

SHENZHEN MINOS TECHNOLOGY CO.,LTD  

Green Product  

IRFZ44N  

Figure 7 Gate-Charge Characteristics  

Figure 8 Capacitance Characteristics  

Figure 9

 

Maximum Forward Biased Safe  

Operation Area  

Figure 10 Single Pulse Power Rating  

Junction-to-Ambient  

Figure 11  

Normalized Maximum Transient Thermal Impedance  

SHENZHEN MINOS TECHNOLOGY CO.,LTD  

Green Product  

IRFZ44N  

Test Circuit and Waveform  

Gate Charge Test Circuit  

Gate Charge Test Waveform  

Resistive Switching Test Circuit  

Resistive Switching Test Waveforms  

Unclamped Inductive Switching (UIS) Test Circuit

 

Unclamped Inductive Switching (UIS) Test Waveforms  

Diode Recovery Test Circuit  

Diode Recovery Test Waveforms  

SHENZHEN MINOS TECHNOLOGY CO.,LTD  

Green Product  

IRFZ44N  

Package Description  

Values(mm)  

Items  

MIN  

MAX  

A

9.60  

10.6  

B

B1  

C

15.0  

8.90  

4.30  

2.30  

1.20  

0.70  

0.30  

1.17  

2.70  

12.6  

2.34  

2.40  

3.50  

16.0  

9.50  

4.80  

3.10  

1.40  

0.90  

0.60  

1.37  

3.80  

14.8  

2.74  

3.00  

3.90  

C1  

D

E

F

G

H

L

N

Q

TO-220

Package  

SHENZHEN MINOS TECHNOLOGY CO.,LTD  

Green Product  

IRFZ44N  

NOTE:  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent  

failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of  

the device when circuit designing.  

2.

When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink.  

3.

MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being  

damaged by the static electricity when using it.  

4.

Shen

zhen Minos

reserves the right to make changes in this specification sheet and is subject to change without  

prior notice.  

CONTACT:  

深圳

市迈诺斯科技

有限公司（总部）  

地

址：深圳市福田区华富街道田面社区深南中路

4026

号田面城市大厦

22

B

-22

C  

电话：0755—83273777  

SHENZHEN MINOS TECHNOLOGY CO.,LTD