Minos-MD23N50
| Part # | Minos-MD23N50 |
Download  | Minos-MD23N50 |
Silicon N-Channel Power MOSFET
Description
MD23N50 the silicon N-channel Enhanced MOSFETs, is obtained
by advanced MOSFET technology which reduce the conduction loss,
improve switching performance and enhance the avalanche energy.
The transistor is suitable device for SMPS, high speed switching and
general purpose applications.
General Features
1
V
DS
=500V, R
dson
<260mΩ @V
GS
=10V, I
D
=23A (Typ:220mΩ)
② Fast
Switching
③ Low
Crss (typical 18pF )
④ 100%
avalanche tested
⑤ Improved
dv/dt capability
⑥ RoHS
product
Application
① High
frequency switching mode power supply
TO247
Package Marking And Ordering Information
：
Ordering Codes
Package
Product Code
Packing
Tube
MD23N50
TO-247
MD23N50
ABSOLUTE RATINGS
@ Ta=25
℃
(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-to-Source Voltage
V
DSS
500
23
V
A
Continuous Drain Current
I
D
Continuous Drain Current T
C
= 100 °C
Pulsed Drain Current(Note1)
Gate-to-Source Voltage
12.6
80
A
I
DM
A
V
GS
±30
1200
5.0
V
Single Pulse Avalanche Energy(Note2)
Peak Diode Recovery dv/dt(Note3)
E
AS
mJ
V/ns
dv/dt
Power Dissipation TO-220,
TO-3PN
230
1.85
48
W
P
D
Derating Factor above 25°C
W/
℃
Power Dissipation TO-220F,
TO-3PF
W
P
D
Derating Factor above 25°C
0.38
W/
℃
T
J
，
T
stg
150
，
–55 to 150
Operating Junction and Storage Temperature Range
℃
Maximum Temperature for Soldering
T
L
300
℃
Thermal characteristics
Thermal characteristics (No FullPAK) TO-3PN
Symbol
R
θJC
Parameter
RATINGS
0.54
Units
Junction-to-Case
Junction-to-Ambient
℃
/W
℃
/W
R
θJA
62.5
Thermal characteristics (FullPAK) TO-3PF
Symbol
R
θJC
Parameter
RATINGS
2.6
Units
Junction-to-Case
Junction-to-Ambient
℃
/W
℃
/W
R
θJA
62.5
Electrical Characteristics
at T
C
= 25°C, unless otherwise specified
OFF Characteristics
Values
Test
Conditions
Units
Symbol
Parameter
Min.
Typ.
Max.
Drain to Source Breakdown Voltage
V
GS
=0V,
I
D
=250µA
V
DSS
500
—
—
—
—
V
ΔBV
DSS
/Δ T
J
ID=250uA,
Reference25
℃
Bvdss Temperature
Coefficient
V/
℃
0.6
—
V
DS
=500V, V
GS
= 0V,
Tj = 25
℃
—
—
10
µA
Drain to Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=
0V,
Tj =
125
℃
—
100
µA
nA
nA
Gate to Source Forward
Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
I
GSS(F)
I
GSS(R)
ON Characteristics
—
—
—
—
100
-100
Values
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Drain-to-Source On-
Resistance
V
GS
=10V,
I
D
=10A(Note4)
R
DS(ON)
V
GS(TH)
g
fs
—
0.22
—
0.26
Ω
V
S
V
DS
= VGS,
I
D
= 250µA(Note4)
Gate Threshold Voltage
2.0
—
4.0
—
V
DS
=20V,
I
D
=10A(Note4)
Forward Trans conductance
12
Dynamic Characteristics
Values
Units
Symbol
Parameter
Test Conditions
Min.
—
Typ.
Max.
—
Ω
Gate resistance
R
g
f = 1.0MHz
1.5
1920
290
Input Capacitance
Output Capacitance
C
iss
C
oss
—
—
PF
V
GS
= 0V
V
DS
= 25V
f = 1.0MHz
—
—
Reverse Transfer
Capacitance
C
rss
—
18
—
Switching Characteristics
Values
Typ.
33
Symbol
Parameter
Test Conditions
Units
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
tr
I
D
=23A
75
—
—
V
DD
= 250V
V
GS
= 10V
R
G
=20Ω
ns
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
91
—
—
83
—
—
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Q
g
—
56
—
I
D
=23A
V
DD
=400V
V
GS
= 10V
Q
gs
Q
gd
—
13
—
nC
—
20
—
Source-Drain Diode Characteristics
Values
Test Conditions
Symbol
Parameter
Units
Min.
—
Typ.
Max.
23
Continuous Source Current (Body
Diode)
Maximum Pulsed Current (Body
Diode)
I
S
—
—
—
A
A
V
T
C
=25 °C
I
SM
V
SD
—
80
I
S
=23A, V
GS
=0V(Note4)
Diode Forward Voltage
—
1.2
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
rr
536
5668
21.1
—
—
—
—
—
—
ns
nC
A
I
S
=23A,
Tj = 25°C
d
IF
/d
t
=100A/us,
V
GS
=0V
Q
rr
I
rrm
Note1: Pulse width limited by maximum junction temperature
Note2: L=10mH, V
DS
=50V, Start TJ=25
℃
Note3: I
SD
=23A,d
i
/d
t
≤100A/us,V
DD
≤B
VDS
, Start T
J
=25
℃
Note4: Pulse width t
p
≤300µs, δ≤2%
Characteristics Curves
Figure 1a Safe Operating Area (No FullPAK)
Figure 1b Safe Operating Area (FullPAK)
Figure 2a Power Dissipation (No FullPAK)
Figure 2b Power Dissipation (FullPAK)
Figure 3a Max Thermal Impendance (No FullPAK)
Figure 3b Max Thermal Impendance (FullPAK)
Figure 4 Typical Output Characteristics
Figure 5 Typical Transfer Characteristics
Figure 6 Typical Drain to Source ON Resistance vs Drain
Figure 7 Typical Drian to Source on Resistance vs Junction
Current
Temperature
Figure 8 Typical Theshold Voltage vs Junction
Temperature
Figure 9 Typical Breakdown Voltage vs Junction
Temperature
Figure 10 Typical Capacitance vs Drain to Source Voltage
Figure 11 Typical Gate Charge vs Gate to Source Voltage
Test Circuit and Waveform
Figure 12 Gate Charge Test Circuit
Figure 13 Gate Charge Waveforms
Figure 14 Resistive Switching Test Circuit
Figure 15 Resistive Switching Waveforms
Figure 16 Diode Reverse Recovery Test Circuit
Figure 17 Diode Reverse Recovery Waveform
Figure 18 Unclamped Inductive Switching Test Circuit
Figure 19 Unclamped Inductive Switching Waveform
Package Description
Values(mm)
Items
MIN
4.6
MAX
5.2
A
A1
B
2,2
2.6
0.9
1.4
B1
B2
B3
B4
C
1.75
1.75
2.8
2.35
2.15
3.35
3.15
0.7
2.8
0.5
D
20.60
16
21.30
18
D1
E
15.5
13
16.10
14.7
5.3
E1
E2
E3
e
3.80
0.8
2.60
5.7
5.2
L
19
20.5
4.6
L1
3.9
ΦP
2.5
3.70
Q
S
5.2
5.8
6.00
6.6
TO-247
Package
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
