Minos-MD3N150
| Part # | Minos-MD3N150 |
Download  | Minos-MD3N150 |
Silicon N-Channel Power MOSFE
Description
The MD3N150 uses advanced technology and design
to provide excellent R
DS(ON)
. It can be used in a wide variety
of applications.
General Features
① V
DS
=1500V, R
dson
<9mΩ @V
GS
=10V, I
D
=3A (T
yp
:5.2mΩ)
② Low
ON Resistance
③ Low
Reverse transfer capacitances
④ 100%
Single Pulse avalanche energy Test
Application
① Power
Switching application
② Adapter
and charger
MINOS TO-3PH
Package Marking And Ordering Information
：
Ordering Codes
Package
Product Code
Packing
MD3N150
TO-3PH
MD3N150
Tube
Electrical Characteristics @ Ta=25
℃
(unless otherwise specified)
Absolute Maximum Ratings:
Symbol
Parameter
Value
Unit
V
DSS
I
D
Drain-to-Source Breakdown Voltage
Drain Current (continuous) at Tc=25
℃
Drain Current (Pulsed)
1500
3
V
A
I
DM
V
GS
P
tot
T
j
12
A
Gate to Source Voltage
±30
250
175
125
V
W
℃
mJ
Total Dissipation at Tc=25
℃
Max. Operating Junction Temperature
Single Pulse Avalanche Energy
Eas
Electrical Parameters:
Symbol
Parameter
Test Conditions
Min Typ
Max
Unit
Drain-source Voltage
V
GS
=0V, I
D
=250
µ
A
V
DS
1500
V
Static Drain-to-Source
on-Resistance
R
DS(on)
V
GS(th)
L
DSS
V
GS
=10V, I
D
=1.5A
5.2
9.0
5.0
1
Ω
V
Gated Threshold Voltage
V
DS
=V
GS,
I
D
=250
µ
A
3.0
4.1
Drain to Source leakage
Current
V
DS
=1500V, V
GS
= 0V
V
GS
= +30V
µ
A
nA
nA
Gated to Source Foward
Leakage
L
GSS(F)
L
GSS(R)
100
Gated to Source Reverse
Leakage
V
GS
= -30V
-100
C
iss
Input Capacitance
Output Capacitance
1938
5104
pF
pF
V
GS
=0V,
V
DS
=25V,
f=1.0MHZ
C
oss
Reverse Transfer
Capacitance
C
rss
pF
2.4
Switching Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
33.8
16.7
56
nS
nS
nS
nS
nC
nC
nC
t
r
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=750V,I
D
=3A,
R
G
=10
Ω
t
d(off)
t
f
27.6
9.3
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=750V
I
D
=3A
Q
gs
Q
gd
174.9
5.3
V
GS
=10V
Source-Drain Diod
e
C
haracteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
3
Unit
A
S-D Current(Body Diode)
I
SD
I
SDM
Pulsed S-D Current(Body Diode)
Diode Forward Voltage
12
A
V
SD
t
rr
V
GS
=0V, I
DS
=3.0A
1.5
V
Reverse Recovery Time
T
J
=25
℃
,I
F
=3.0A
302.3
9.9
nS
nC
di/dt=100A/us
Q
rr
Reverse Recovery Charge
*Pulse Test: Pulse Width <= 300
µ
s, Duty Cycle< =2%
Symbol
Parameter
Typ
1.7
Units
℃
/W
R
θJC
Junction-to-Case
Typical Performance Characteristics
Fig.1 Safty peration area
Fig.2 Thermal impedance
Fig.3 Output
characteristics
Fig.4 Transfer
characteristics
Fig.5 Normalized
BVDSS vs.temperature
Fig.6 Static
drain-source on resistance
Fig.7 Gate
charge vs.gate-source voltage
Fig.8 Capacitance
variations
Fig.9 Normalized gate threshold voltage
vs.temperature
Fig.10 Capacitance
variations
Fig.11 Normalized
gate threshold voltage
vs.temperature
Fig.12 Normalized on resistance vs.temperature
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
