Minos-MDT08N06

60V N-Channel Power MOSFET  

Description  

The MDT08N06 uses advanced trench technology  

to provide excellent RDS(ON), low gate charge. It can  

be used in a wide variety of applications.  

General Features  

① V

DS

=60V, R

DSon

<8mΩ @V

GS

=10V, I

D

=80A (Typ:7mΩ)  

② High

 

density cell design for lower R

dson  

Schematic diagram  

③ Fully

 

characterized avalanche voltage and current  

④ Good

 

stability and uniformity with high EAS  

⑤ Excellent

 

package for good heat dissipation  

Application  

① Power

 

Switching application  

② Hard

 

switched and High frequency circuits  

③ Uninterruptible

 

power supply  

TO-252  

Package Marking And Ordering Information

：

 

Ordering Codes  

Package  

Product Code  

Packing  

MDT08N06-D  

TO-252  

MDT08N06  

Tube/Reel  

Electrical Characteristics @ Ta=25

℃

 

(unless otherwise specified)  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

V

GS  

I

D  

Limit  

Unit  

V

60  

±20  

80  

Gate-Source Voltage  

V

Drain Current-Continuous  

A

Drain Current-Pulse

d

(Note 1)  

320  

107  

A

I

DM  

W

Maximum Power Dissipation(Tc=25

℃

)  

Single pulse avalanche energy

(Note 2)  

Operating Junction and Storage Temperature Range  

P

D  

E

AS  

280  

mJ  

-55 To 175  

℃

T ,T  

J

STG  

Thermal Characteristic  

1.4  

℃

/W  

Thermal Resistance,Junction-to-Case  

R

θJ  

Electrical Characteristics

(TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ

 

Max Unit  

Off Characteristics  

BV

DSS  

V

GS

=0V I

D

=250μA  

60  

–

–

V

Drain-Source Breakdown Voltage  

I

DSS  

I

GSS  

V

DS

=60V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

–

–

–

–

1

μA  

nA  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

±100  

On Characteristics  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V, I

D

=20A  

V

DS

=10V,I

D

=20A  

Gate Threshold Voltage  

2

–

3

7

4

8

–

V

mΩ  

S

Drain-Source On-State Resistance(Note 3)  

Forward Transconductance  

–

25  

Dynamic Characteristics  

C

lss  

C

oss  

C

rss  

Input Capacitance  

–

–

–

3000  

270  

–

–

–

pF  

pF  

pF  

V

DS

=30V,V

GS

=0V,  

Output Capacitance  

f

=1.0MHz  

Reverse Transfer Capacitance  

240  

Switching Characteristics

(Note 4)  

t

d(on)  

Turn-on Delay Time  

–

8.5  

–

nS  

t

r  

V

DD

=30V, ID=30A,  

V

GS

=10V,R

GEN

=3Ω  

–

–

7

40  

–

–

–

–

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

Turn-Off Delay Time  

t

d(off)  

t

f  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

15  

Q

g  

Q

gs  

Q

gd  

–

–

–

72  

V

DS

=48V,I

D

=40A  

V

GS

=10V  

21.5  

28  

–

–

Drain-Source Diode Characteristics  

V

SD  

V

GS

=0V,I

S

=80A  

Diode Forward Voltage  

–

–

1.2  

V

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junctio

n

t

emperature.  

E

AS

condition :T

j

=25

℃

,V

DD

=30V,V

GS

=10V,L=0.5mH,Rg=25

Ω  

2.  

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

4.

Guaranteed by design, not subject to production.  

Characteristics Curves  

Figure 1 Output Characteristics  

Figure 2 Transfer Characteristics  

Figure 4 On-Resistance vs. Junction Temperature  

Figure 6 Body Diode Forward Voltage  

Figure 3 On-Resistance vs. I

D

and V

GS  

Figure 5 On-Resistance vs. V

GS  

Figure 7 Gate-Charge Characteristics  

Figure 8 Capacitance Characteristics  

Figure 9  

Maximum Forward Biased Safe Operation  

Area  

Figure 10 Single Pulse Power Rating  

Junction-to-Ambient  

Figure 11 Normalized Maximum Transient Thermal Impedance  

Package Description  

Items  

Values

（

mm

）  

MIN  

6.30  

0

MAX  

6.90  

0.13  

6.30  

2.50  

0.60  

0.90  

1.00  

0.60  

1.20  

10.50  

3.10  

1.00  

5.50  

2.49  

A

A1  

B

5.70  

2.10  

0.30  

0.60  

0.70  

0.30  

0.70  

9.60  

2.70  

0.60  

5.10  

2.09  

C

D

E1  

E2  

F

G

L1  

L2  

H

M

N

R

0 .3  

T

1.40  

5.10  

1.60  

6.30  

Y

TO-252 Package  

NOTE:  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device,  

even the permanent failure, which may affect the dependability of the machine. Please do not  

exceed the absolute maximum ratings of the device when circuit designing.  

2.

When installing the heat sink, please pay attention to the torsional moment and the smoothness of  

the heat sink.  

3.

MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device  

from being damaged by the static electricity when using it.  

4.

Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to  

change withoutprior notice.  

CONTACT:  

深圳市迈诺斯科技有限公司（总部）  

地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C  

邮编：518025  

电话：0755-83273777