Minos-MDT7N65
| Part # | Minos-MDT7N65 |
Download  | Minos-MDT7N65 |
Silicon N-Channel Power MOSFET
Description
MDT7N65, This Power MOSFET is produced using Wisdom’s
advanced planar stripe, DMOS technology. This latest technology
has been especially designed to minimize on-state resistance,
have a high rugged avalanche characteristics. These devices are
well suited for high efficiency switch mode power supplies, active
power factor correction, electronic lamp ballasts based on half
bridge topology.
KEY CHARACTERISTICS
① V
DS
= 650V,I
D
= 7A R
DS(ON)
<1.2Ω @ V
GS
=10V
② Gate
Charge (Typical 28nC)
③ Improved
dv/dt Capability, High Ruggedness
④ 100%
Avalanche Tested
⑤ Maximum
Junction Temperature Range (150°C)
TO-252
ORDERING INFORMATION
Ordering Codes
Package
Product Code
Packing
MDT7N65
TO-252
MDT7N65
Tube
ABSOLUTE RATINGS at TC=25°C,unless otherwise specified
Symbol
Parameter
Rating
Units
V
DSS
650
7
V
A
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
I
D
4.4
28
A
= 100
°C
C
I
DM
A
Pulsed Drain Current(Note1)
Gate-to-Source Voltage
V
GS
±30
420
4.5
V
E
AS
mJ
V/ns
Single Pulse Avalanche Energy(Note2)
Peak Diode Recovery dv/dt(Note3)
Power Dissipation
TO-252
dv/dt
48
W
0.38
W/
℃
P
D
Derating Factor above 25°C
150
，
–55 to
150
℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
L
T
J
，
T
stg
300
Thermal characteristics
Thermal characteristics (No FullPAK) TO-252
Symbol
R
θJC
Parameter
RATINGS
2.6
Units
℃
/W
℃
/W
Junction-to-Case
Junction-to-Ambient
R
θJA
62.5
Electrical Characteristics At TC=25°C,unless otherwise specified
OFF Characteristics
Values
Test Conditions
Symbol
Parameter
Units
Min.
Typ.
Max.
Drain to Source Breakdown
Voltage
V
GS
=0V,
I
D
=250µA
V
DSS
650
—
—
—
—
V
ΔBV
DSS
/Δ
T
J
ID=250uA,
Reference25
℃
V
DS
=600V,
V
GS
= 0V,
Bvdss Temperature
Coefficient
V/
℃
0.6
µA
µA
—
—
—
—
1
I
DSS
Drain to Source Leakage
Current
j
T =
25
℃
V
DS
=480V,
V
GS
= 0V,
T
j
= 125
℃
100
Gate to Source Forward
Leakage
Gate to Source Reverse
Leakage
I
GSS(F)
I
GSS(R)
V
GS
=+30V
V
GS
=-30V
nA
nA
—
—
—
—
100
-100
ON Characteristics
Symbol
Values
Typ.
Parameter
Test Conditions
Units
Min.
Max.
V
GS
=10V,
I
D
=3.5A
Drain-to-Source On-
Resistance
R
DS(ON)
V
GS(TH)
—
1.0
—
1.2
4.0
Ω
V
VDS = VGS,
ID = 250µA
2.0
Gate Threshold Voltage
Dynamic Characteristics
Values
Typ.
Symbol
Parameter
Test Conditions
Units
Min.
Max.
R
g
Ω
Gate resistance
f = 1.0MHz
—
—
—
25
1100
110
—
C
iss
C
oss
Input Capacitance
Output Capacitance
1500
150
V
GS
= 0V
V
DS
= 25V
F = 1.0MHz
PF
Reverse Transfer
Capacitance
C
rss
—
12
16
Switching Characteristics
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
15
30
110
40
28
5
Max.
40
70
11
90
37
—
t
d(ON)
T
r
t
d(OFF)
t
f
Turn-on Delay Time
Rise Time
ID =7A
VDD = 300V
VGS = 10V
RG =25Ω
ns
—
Turn-Off Delay Time
Fall Time
—
—
Q
g
Total Gate Charge
Gate to Source Charge
Gate to Drain
(“Miller”)Charge
—
ID =7A
VDS =480V
VGS = 10V
nC
Q
gs
Q
gd
—
—
11
—
Source-Drain Diode Characteristics
Values
Test Conditions
Symbol
Parameter
Units
Min
—
Typ.
Max.
7
Continuous Source Current (Body
Diode)
I
S
—
A
T
C
=25 °C
I
SM
Maximum Pulsed Current (Body Diode)
—
—
—
—
—
28
1.4
—
A
V
V
SD
T
rr
I
S
=7A, V
GS
=0V
Diode Forward Voltage
Reverse Recovery Time
I
S
=7A,
d
IF/dt
=100A/us,
V
GS
=0V
365
ns
Q
rr
Reverse Recovery Charge
—
3.4
—
nC
NOTES
1.Repeativity rating : pulse width limited by junction temperature
2.L = 15.7mH, IAS =7.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3.ISD ≤
7A, di/dt
≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4.Pulse Test : Pulse Width
≤ 300us, Duty Cycle
≤ 2%
5.Essentially independent of operating temperature.
Characteristics Curves
Figure 1. On-Region Characteristics
Figure2.Transfer Characteristics
Figure3.On-Resistance Variation vs Drain Current and
Gate Voltage
Figure4.Body Diode Forward Voltage Variation with
Source Current and Temperature
Figure5.Capacitance Characteristics
Figure6.Gate Charge Characteristics
Figure7.Breakdown Voltage Variation
Figure8.On-Resistance Variation
Figure9.Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
Figure11.TransientThermalResponseCurve
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Package Description
Values(mm)
Items
MIN
6.30
0
MAX
6.90
0.13
6.30
2.50
0.60
0.90
1.00
0.60
1.20
10.50
3.10
1.00
5.50
2.49
A
A1
B
5.70
2.10
0.30
0.60
0.70
0.30
0.70
9.60
2.70
0.60
5.10
2.09
C
D
E1
E2
F
G
L1
L2
H
M
N
R
0 .3
T
1.40
5.10
1.60
6.30
Y
TO-252 Package
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
