Minos-MLG20T65FUL
| Part # | Minos-MLG20T65FUL |
Download  | Minos-MLG20T65FUL |
Description
MLG20T65FUL is obtained by advanced Trench Field Stop
(T-FS) technology which is characteristic with low VCE(sat) ,
optimized switching performance and low gate charge Qg. The
IGBT is suitable device for BLDC, UPS, and low VCE(sat)
applications.
KEY CHARACTERISTICS
Parameter
V
CES
Value
650
20
Unit
V
I
C
A
V
CE(sat).typ
1.55
V
FEATURES
①Fast Switching
②Low VCE(sat)
③Positive temperature coefficient
④Very soft, fast recovery anti-parallel diode
⑤RoHS product
APPLICATIONS
TO-220
①UPS
②Motor drives
③PFC
④Portable power station
ORDERING INFORMATION
Ordering Codes
Package
Product Code
Packing
MLG20T65FUL
TO-220
MLG20T65FUL
Tube
ABSOLUTE RATINGS
Symbol
Parameter
TO-220
TO-220F
Units
Collector-Emitter Voltage
Collector Current @T
C
=25°C
Collector Current @T
C
=100°C
V
CES
650
40
650
40
V
A
A
A
I
C
20
20
Pulsed Collector Current, tp limited by
T
Jmax
I
CM
80
80
Diode Continuous Forward Current
@T
C
=25°C
Diode Continuous Forward Current
@T
C
=100°C
Diode Maximum Forward Current, limited by
T
Jmax
40
20
40
20
A
A
A
V
I
F
I
FM
40
40
Gate-Emitter Voltage
V
GES
±30
±30
Short circuit withstand time VGE=15V, VCC≤400V, Allowed number of
between short circuits: ≥ 1.0s,T
J
≤
175°C
t
SC
short circuits<1000,Times
3.0
us
136
Power Dissipation @T
C
=25°C
P
D
T
Jmax,
T
stg
T
L
39
W
175, –55 to
175
Operating Junction and Storage Temperature
Range
℃
260
Maximum Temperature for
Soldering
℃
Thermal characteristics
Symbol
R
θJC
Parameter
TO-220
1.1
TO-220F
Units
℃
/W
℃
/W
℃
/W
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Junction-to-Ambient
3.8
6.8
78
R
θJC
2.4
R
θJA
62.5
Electrical Characteristics at TC = 25°C, unless otherwise specified
Static Characteristics
Values
Test Conditions
Symbol
Parameter
Units
Min.
Typ.
Max.
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
=
250µA
V
CES
650
—
—
V
V
GE
= 15V,I
C
= 20A
—
—
—
1.55
1.80
1.90
1.95
—
—
T
J
=25
℃
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE(TH)
V
V
T
J
=125
℃
T
J
=175
℃
Gate Threshold Voltage
Diode Forward Voltage
V
CE
= V
GE
,I
C
= 1mA
I
F
=10A T
J
=25
℃
5.1
5.8
6.5
—
—
—
1.60
1.40
1.30
2.20
—
—
T
J
=125
℃
T
J
=175
℃
V
F
V
F
V
V
I
F
=20A T
J
=25
℃
—
—
—
1.90
1.75
1.65
2.50
—
—
T
J
=125
℃
T
J
=175
℃
Diode Forward Voltage
Collector-Emitter Leakage Current
Gate-Emitter Leakage Current
Gate-Emitter Reverse Leakage
V
CE
= 650V, V
GE
= 0V
I
CES
—
—
—
—
—
—
4
µA
nA
nA
V
GE
= +30V
V
GE
= -30V
I
GES(F)
I
GES(R)
200
-200
Pulse width tp
≤300
µs,
δ≤2%
Dynamic Characteristics
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
Max.
—
Input Capacitance
C
iss
892
43
V
GE
=0V V
CE
=25V
f =1.0MHz
Output Capacitance
C
oss
—
—
pF
nC
Reverse Transfer Capacitance
C
rss
—
10
—
Gate charge
Q
G
Q
GE
Q
GC
—
—
—
44
13
—
—
—
I
CE
=20A
Vcc=520V
V
GE
=15V
Gate-emitter charge
Gate-collector charge
18
VGE=15.0V,VCC≤400V
，
tSC≤3us
，
TJ
≤
175
℃
Short circuit collector current
Max.1000 short circuits, Times
between short
circuits:
≥ 1.0s
I
C(SC)
110
A
IGBT Switching Characteristics, at TJ=25
℃
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
Max.
—
Turn-on Delay Time
Rise Time
t
d(on)
tr
15
24
I
C
=20A
V
CE
= 400V
V
GE
= 15V
R
G
=10Ω
T
J
=25°C
—
—
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
—
75
—
—
86
—
Inductive Load
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
on
E
off
E
ts
—
0.50
0.27
0.77
—
mJ
—
—
—
—
IGBT Switching Characteristics, at TJ=175
℃
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
Max.
—
Turn-on Delay Time
Rise Time
t
d(on)
tr
14
—
23
—
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
—
96
—
I
C
=20A
V
CE
= 400V
V
GE
= 15V
R
G
=10Ω
T
J
=175°C
—
128
0.54
0.49
1.03
—
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
on
E
off
E
ts
—
—
—
—
mJ
Inductive Load
—
—
Diode Characteristics, at TJ=25
℃
Values
Symbol
Parameter
Test Conditions
Units
Mi
Typ.
Max.
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
66
182
4.5
75
T
rr
Q
rr
I
rrm
T
rr
—
—
—
—
—
—
—
—
—
—
—
—
ns
nC
A
I
F
=10A,
di/dt=200A/us,
T
J
=25°C
T
J
=25°C
ns
nC
A
I
F
=20A,
di/dt=200A/us,
236
5.4
Q
rr
I
rrm
Diode Characteristics, at TJ=175
℃
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
122
690
10.0
150
910
11.0
Max.
—
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
rr
Q
rr
I
rrm
T
rr
ns
nC
A
I
F
=10A,
T
J
=175°C
di/dt=200A/us,
—
—
—
—
—
—
ns
nC
A
I
F
=20A,
T
J
=175°C
Q
rr
I
rrm
di/dt=200A/us,
—
—
—
—
Characteristics Curves
Figure 1. Forward Bias Safe Operating Area for TO220
Figure 2. Forward Bias Safe Operating Area for TO220F
Figure 4. Power Dissipation vs Case Temperature for
TO220F
Figure 3. Power Dissipation vs Case Temperature for TO220
Figure 5. Collector Current vs Case Temperature
Figure 6. Typical Transfer Characteristics
(T
C
=25
℃
)
(T
C
=175
℃
)
Figure 8. Typical Output Characteristics
Figure 7. Typical Output Characteristics
Figure 9. Typical Collector-Emitter Saturation Voltage vs
Case Temperature
Figure 10. Typical Gate-Emitter Threshold Voltage vs
Case Temperature
Resistor
Resistor
Figure 11. Typical Switching Times vs Gate
Figure 12. Typical Switching Energy vs Gate
(T
J
=25
℃
, Vce=400V, Vge=15/0V, Ic=20A)
(T
J
=25
℃
, Vce=400V, Vge=15/0V, Ic=20A)
Figure 13. Typical Switching Times vs Case
Temperature ( Vce=400V, Vge=15/0V, Ic=20A)
Figure 14. Typical Switching Energy vs Case
Temperature (Vce=400V, Vge=15/0V, Ic=20A)
Figure 15. Typical Switching Times vs Collector Current
Figure 16. Typical Switching Energy vs Collector Current
(Tc=25
℃
,
Vce=400V, Vge=15/0V)
(Tc=25
℃
,
Vce=400V, Vge=15/0V)
Figure 17. Typical Switching Times vs V
CE
Figure 18. Typical Switching Energy vs vs V
CE
( Tc=25
℃
,
Vge=15/0V, Ic=20A)
( Tc=25
℃
,
Vge=15/0V, Ic=20A)
Figure 20. Typical Capacitance vs Collector- Emitter
Voltage
Figure 19. Typical Gate Charge
Figure 21. IGBT Transient Thermal Impedance vs Pulse
Width(TO220)
Figure 22. IGBT Transient Thermal Impedance vs Pulse
Width(TO220F)
Figure 23. Diode Transient Thermal Impedance vs Pulse
Width(TO220)
Figure 24. Diode Transient Thermal Impedance vs Pulse
Width(TO220F)
Test Circuit and Waveform
Figure 11. Inductive Switching Test Circuit
Figure 12. Definition of switching times
Figure 13. Definition of switching losses
Figure 14. Definition of diode switching characteristics
Package Description
Values(mm)
Items
MAX
MIN
A
9.60
10.6
B
B1
C
15.0
8.90
4.30
2.30
1.20
0.70
0.30
1.17
2.70
12.6
2.34
2.40
3.50
16.0
9.50
4.80
3.10
1.40
0.90
0.60
1.37
3.80
14.8
2.74
3.00
3.90
C1
D
E
F
G
H
L
N
Q
φp
TO-220 Package
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
