Minos-MLG40T65FUK
| Part # | Minos-MLG40T65FUK |
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Description
MLG40T65FUK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low V
CE(sat)
,
optimized switching performance and low gate charge Q
g
. The IGBT is suitable device for welding, UPS, and high
switching frequency applications.
KEY CHARACTERISTICS
Parameter
V
CES
Value
650
40
Unit
V
I
C
A
V
CE(sat).typ
1.55
V
FEATURES
①
Fast Switching
②
Low V
CE(sat)
③
Positive temperature coefficient
④
Fast recovery anti-parallel diode
⑤
RoHS product
APPLICATIONS
TO-3PN
TO-247
①
Welding converters
②
UPS
③
Boost Chopper
④
Air condition
Package Marking And Ordering Information
：
Ordering Codes
MLG40T65FUK-W
MLG40T65FUK-F
Package
TO-3PN
TO-247
Product Code
G40T65FUK
G40T65FUK
Packing
Tube
Tube
ABSOLUTE RATINGS
Symbol
V
CES
Parameter
Values
Units
Collector-Emitter Voltage
650
80
V
A
A
A
A
A
A
V
Collector Current @T
C
=25°C
I
C
I
CM
I
F
Collector Current @T
C
=100°C
40
Pulsed Collector Current, tp limited by T
Jmax
Diode Continuous Forward Current @T
C
=25°C
Diode Continuous Forward Current @T
C
=100°C
Diode Maximum Forward Current, limited by T
Jmax
Gate-Emitter Voltage
160
40
20
I
FM
80
V
GES
±30
Short circuit withstand time VGE=15V, VCC≤400V, Allowed number of
short circuits<1000,Times between short circuits: ≥ 1.0s,T
J
≤ 175°C
t
SC
3.0
µs
Power Dissipation @T
C
=25°C
P
D
T
Jmax,
T
stg
T
L
298
175, –55 to 175
260
W
℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Thermal characteristics
Symbol
Parameter
Values
Units
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Junction-to-Ambient
R
θJC
R
θJC
R
θJA
0.5
0.8
40
℃
/W
℃
/W
℃
/W
Electrical Characteristics
，
at TC = 25°C, unless otherwise specified
Static Characteristics
Values
Units
V
Symbol
V
CES
Parameter
Test Conditions
Min.
Typ.
Max.
Collector-Emitter Breakdown
Voltage
V
GE
= 0V,
I
C
= 250µA
650
—
—
V
GE
= 15V,I
C
= 40A
T
J
=25
℃
—
—
—
1.55
1.80
1.90
1.95
—
—
Collector-Emitter Saturation
Voltage
V
CE(sat)
V
GE(TH)
V
V
T
J
=125
℃
T
J
=175
℃
Gate Threshold Voltage
V
CE
= V
GE
,I
C
= 1mA
4.8
5.5
6.2
I
F
=20A
—
—
—
2.20
1.80
1.52
2.80
—
—
T
J
=25
℃
T
J
=125
℃
T
J
=175
℃
I
F
=40A
T
J
=25
℃
T
J
=125
℃
T
J
=175
℃
Diode Forward Voltage
V
F
V
F
V
V
—
—
—
2.60
2.25
1.95
3.20
—
—
Diode Forward Voltage
V
CE
= 650V,
V
GE
= 0V
Collector-Emitter Leakage Current
I
CES
—
—
—
—
—
—
4
µA
nA
nA
Gate-Emitter Forward Leakage
Current
V
GE
= +30V
V
GE
= -30V
I
GES(F)
I
GES(R)
200
-200
Gate-Emitter Reverse Leakage
Current
Pulse width tp≤300
µs,
δ≤2%
Dynamic Characteristics
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
2225
90
Max.
Input Capacitance
C
iss
C
oss
C
rss
Q
G
—
—
—
—
—
—
V
GE
=0V
V
CE
=25V
f =1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate charge
—
pF
nC
—
27
—
110
52
V
CC
=520V
I
CE
=20A
V
GE
=15V
Gate-emitter charge
Gate-collector charge
Q
GE
Q
GC
—
—
23
Short circuit collector current
Max.1000 short circuits,
Times between short circuits: ≥ 1.0s
V
GE
=15.0V,V
CC
≤400V
，
I
C(SC)
320
A
t
SC
≤3us
，
T
J
≤175
℃
IGBT Switching Characteristics, at TJ=25
℃
Values
Typ.
19
Symbol
Parameter
Test Conditions
Units
ns
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(on)
tr
—
35
—
I
C
=40A
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
—
90
—
V
CE
= 400V
V
GE
= 15V
R
G
=5Ω
—
26
—
T
J
=25°C
Inductive Load
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
on
E
off
E
ts
—
0.60
0.38
0.98
—
—
—
mJ
—
—
IGBT Switching Characteristics, at TJ=175
℃
Values
Typ.
17
Symbol
Parameter
Test Conditions
Units
ns
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(on)
tr
—
32
—
I
C
=40A
V
CE
= 400V
V
GE
= 15V
R
G
=5Ω
T
J
=175°C
Inductive Load
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
—
142
36
—
—
—
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
on
E
off
E
ts
—
0.8
—
—
0.65
1.45
—
mJ
—
—
Diode Characteristics, at TJ=25
℃
Values
Typ.
97
Symbol
Parameter
Test Conditions
Units
Min.
—
Max.
—
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
rr
Q
rr
I
rrm
T
rr
ns
nC
A
I
F
=20A,
di/dt=200A/µs,
T
J
=25°C
—
109
1.8
—
—
—
—
127
326
4.8
—
ns
nC
A
I
F
=40A,
di/dt=200A/µs,
T
J
=25°C
Q
rr
I
rrm
—
—
—
—
Diode Characteristics, at TJ=175
℃
Values
Typ.
147
742
7.8
Symbol
Parameter
Test Conditions
Units
Min.
—
Max.
—
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
rr
Q
rr
I
rrm
T
rr
ns
nC
A
I
F
=20A,
di/dt=200A/µs,
T
J
=175°C
—
—
—
—
—
158
870
9
—
ns
nC
A
I
F
=40A,
di/dt=200A/µs,
T
J
=175°C
Q
rr
I
rrm
—
—
—
—
Characteristics Curves
Figure 1. Forward Bias Safe Operating Area
Figure 2. Power Dissipation vs Case Temperature for
TO3PN/TO247
for TO3PN/TO247
Figure 3. Collector Current vs Case Temperature
Figure 4. Typical Transfer Characteristics
Figure 5. Typical Output Characteristics (T
J
=25
℃
)
Figure 6. Typical Output Characteristics (T
J
=175
℃
)
Figure 7. Typical Collector-Emitter Saturation Voltage vs
Junction Temperature
Figure 8. Typical Gate-Emitter Threshold Voltage vs Junction
Temperature
Figure 9. Typical Switching Times vs Gate Resistor (T
J
=25
℃
,
Figure 10. Typical Switching Energy vs Gate Resistor (T
J
=25
℃
,
V
CE
=400V, V
GE
=15/0V, I
C
=40A)
V
CE
=400V, V
GE=
15/0V, I
C
=40A)
Figure 11. Typical Switching Times vs Junction Temperature
( V
CE
=400V, V
GE
=15/0V, Ic=40A)
Figure 12. Typical Switching Energy vs Junction Temperature
(V
CE
=400V, V
GE
=15/0V, Ic=40A)
Figure 13. Typical Switching Times vs Collector Current
Figure 14. Typical Switching Energy vs Collector Current
(T
J
=25
℃
, V
CE
=400V, V
GE
=15/0V)
(T
J
=25
℃
, V
CE
=400V, V
GE
=15/0V)
Figure 15. Typical Switching Times vs V
CE
Figure 16. Typical Switching Energy vs
V
CE
( T
J
=25
℃
,V
GE
=15/0V, I
C
=40A)
( T
J
=25
℃
, V
GE
=15/0V, I
C
=40A)
Figure 17. Typical Gate Charge
Figure 18. Typical Capacitance vs Collector-Emitter Voltage
Figure 19. IGBT Transient Thermal Impedance vs Pulse
Width(TO3PN/TO247)
Figure 20. Diode Transient Thermal Impedance vs Pulse
Width(TO3PN/TO247)
Figure 21. Typical Diode Forward Current vs Forward Voltage
Test Circuit and Waveform
Figure 22. Inductive Switching Test Circuit
Figure 23. Definition of switching times
Figure 24. Definition of switching losses
Figure 25. Definition of diode switching characteristics
Package Description
TO-3PN Package
Values(mm)
Items
MIN
15.00
19.20
MAX
16.00
20.60
A
B
C
D
E
4.60
1.40
5.00
1.60
0.90
0.50
2.00
3.00
3.00
1.20
2.70
19.00
5.25
3.10
1.10
0.70
2.20
3.20
3.70
1.70
2.90
21.00
5.65
3.30
F
G1
G2
H
I
L
N
TO-247 Package
Values(mm)
Items
MIN
4.90
2,27
1.85
1.07
1.90
1.75
2.87
2.87
0.55
20.82
16.25
1.05
15.70
13.10
3.68
1.68
MAX
5.16
2.53
2.11
1.33
2.41
2.15
3.38
3.13
0.68
21.10
17.65
1.35
16.03
14.15
5.10
2.60
A
A1
A2
B
B1
B2
B3
B4
C
D
D1
D2
E
E1
E2
E3
e
5.44
L
19.80
4.17
3.50
5.49
6.04
20.31
4.47
3.70
6.00
6.30
L1
ΦP
Q
S
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
